side and top views of a MOSFET

Metal Oxide Semiconductor Field Effect Transistor

VS
n-Si

VG

VD
D

n-Si

p-type silicon

source

SiO2

side view

Lundstrom Fall 2012

gate
top view

drain
2

transistors

Lundstrom Fall 2012

transistor as a black box

terminal 1
There are many kinds of transistors:

I1
black
box

control

terminal 4

terminal 2

MOSFET
SOI MOSFET
SB FET
FinFET
MODFET (HEMT)
bipolar transistor
JFET
heterojunction bipolar transistor
BTBT FET
SpinFET

Lundstrom Fall 2012

the bulk MOSFET

G

circuit symbol
Gate

source

drain

silicon

ID
SiO2

Source

Drain
Body

B
(Texas Instruments, ~ 2000)

Lundstrom Fall 2012

the MOSFET as a 2-port device

MOSFET circuit symbol

common source

Drain
D

ID

ID

Gate

Source

VGS

output

VDS

input

current vs. voltage (IV)

characteristics

I D VGS  at a fixed VDS

transfer

I D VG , VS , VD 

I D VDS  at a fixed VGS

output

IV characteristics: resistor
I


V R

less
resistance

I
R

more
resistance

V


V R

Ohms Law

Georg Ohm, 1827

Lundstrom Fall 2012

IV characteristics: ideal current source

I


I0

I0

V
V


I0
Lundstrom Fall 2012

IV characteristics: transistors
ID
D

ID

VGS1

G
S

VDS
n-channel
enhancement
mode MOSFET

gate voltage
gate voltage controlled
controlled resistor
current source
linear region
saturation region

IV characteristics: real current sources

I

I0

I 0  V R0

I0

R0

V
V


Lundstrom Fall 2012

10

IV characteristics: transistors
ID
D

ID

VGS1

G
S

VDS
n-channel
enhancement
mode MOSFET

11

MIOSFET IV: output characteristics

ID
D

ID

VGS

G
S
subthreshold region

n-channel
enhancement
mode MOSFET

linear region

VDS

saturation region
12

Lundstrom Fall 2012

output vs. transfer characteristics

output characteristics

ID

transfer characteristics

high VDS

low VDS

VDS 2 ! VDS1

ID

G
S

VDS1

VDSAT

VDS

saturation voltage

VT
threshold voltage

VGS
13

applications of MOSFETs
symbol
amplifier

switch

D
G

G
S
S

14

Lundstrom Fall 2012

input
signal

output
signal
S

n-channel vs. p-channel MOSFET

n-MOSFET

p-MOSFET

ID

ID
0 VG ! VT VD ! 0

VS
n-Si

15

channel

n-Si

0 VG  VT VD  0

VS
p-Si

channel

p-type silicon

n-type silicon

side view

side view
Lundstrom Fall 2012

p-Si

MOSFET device metrics

on-resistance

output resistance:

RON :  Pm

rd

:  Pm

ID

on-FXUUHQWP$P

mA Pm 

I D VGS

VGS

VDS

VDD 

transconductance

gm {

VDS

VDD
16
Lundstrom Fall 2012

'I D
'VGS

PS

VDS

Pm 

MOSFET device metrics (ii)

transfer characteristics:

ID

ION

mA Pm 
VDS

off-current

VDD

VDS

0.05 V

VGS

VTSAT
17

threshold voltage

VTLIN

VDD

MOSFET device metrics (iii)

transfer characteristics:

n
log10 I D

VDS

ION

VDD

mA Pm 

VDS

0.05 V

DIBL (drain-induced barrier lowering)

mV V
off-current

subthreshold swing:

mV decade 
VGS

VT
18

VDD
Lundstrom Fall 2012

summary
Given the measured characteristics of a MOSFET, you
should be able to determine:
1.
2.
3.
4.
5.
6.
7.
8.
9.

on-current: ION
off-current: IOFF
subthreshold swing, S
drain induced barrier lowering: DIBL
threshold voltage: VT (lin) and VT (sat)
on resistance: RON
drain saturation voltage: VDSAT
output resistance: ro
transconductance: gm

Our goal in this course is to understand these device metrics.

19

Lundstrom Fall 2012

understanding MOSFETs
VGS ! VT

n-Si

VD

n-Si
y

p-Si
x

To understand this device, we should first draw an

Energy Band Diagram.

Lundstrom Fall 2012

Kroemers lemma of proven ignorance

If, in discussing a semiconductor problem, you cannot

draw an Energy Band Diagram, this shows that you
dont know what you are talking about.
corollary:
If you can draw one, but dont, then your audience wont
know what you are talking about.

Herbert Kroemer, Nobel Lecture, Dec. 8, 2000.

3
Lundstrom Fall 2012

silicon energy levels / energy bands

Si atom (At. no. 14)
4S0
3P2

Isolated Si atoms have energy

levels.

3S2
2P6

In a solid, these levels broaden

into energy bands.

2S2
1S2
4

Lundstrom Fall 2012

silicon energy levels / energy bands

mostly empty states

EC

EG
EV

1.1 eV

mostly filled states

The electronic states in a solid are

de-localized, so we can ask how
the band edges vary with position.
That is an energy band diagram.

r
E r

C

5
Lundstrom Fall 2012

r
E r

V

Fermi level / Fermi function

mostly empty states

EC

EF
EV

mostly filled states

Fermi function
f0 E 

1
1  eE  EF  kBT

f0 E  | eEF  E  kBT
EF  E
non-degenerate semiconductor
Boltzmann statistics

uniform n-type semiconductor

EC
EF
EV

n0

n0 p0

mostly filled states

x

7
Lundstrom Fall 2012

E E
k T
N C e F C  B L

ni2

uniform p-type semiconductor

EC
p0

EF
EV

n0 p0

mostly filled states

x

8
Lundstrom Fall 2012

E E
k T
NV e V F  B L

ni2

equilibrium E-band diagram: 3 separate pieces

VGS

n-Si

n-Si
y

p-Si
x

EC

EC

EF

EF

EF
EV

EV
9

source

channel
Lundstrom Fall 2012

drain

equilibrium E-band diagram: 3 separate pieces

EC

EC

EF

EF

EF
EV

EV
source

channel

drain

1) Equilibrium: Fermi level is constant

2) Changes in electrostatic potential, change the electrons
energy.

10


 q\ x 

EC

EC 0  q\ x

EV

EV 0

Lundstrom Fall 2012

putting the 3 pieces together (equilibrium)

EF

EC

EV

x
source

drain

channel

11
Lundstrom Fall 2012


 q\ x 

EC x

EC 0  q\ x

EV

EV 0

final result: one semiconductor with 3 regions

Now, what effect does a gate voltage have?

EF

EC

EV

x
source

12

channel


 q\ x 

EC x

EC 0  q\ x

EV

EV 0

Lundstrom Fall 2012

drain

equilibrium energy band diagram

A positive gate voltage will lower the electrostatic potential in the
channel and therefore lower the electron energy in the channel.
VGS

n-Si

n-Si
y

p-Si
x

13
Lundstrom Fall 2012

effect of gate voltage

VG

low gate voltage

EC

EC 0  q\ s

EC

EF high gate voltage

x
n0

NC eEF  EC  kBTL /cm 3

Qn \ S  q n0 ydy C/cm 2
0

14
Lundstrom Fall 2012

effect of drain voltage

VG

What if we apply a positive

voltage to the drain?

EC

1) The Fermi level in the drain

is lowered.

EF

EC

EC 0  q\ s

2) The conduction band is

lowered too, but the
electron density stays the
same.

15
Lundstrom Fall 2012

effect of gate and drain voltage

VG

E
EC x EC 0  q\ s x
EF 1

EC x

qVDS

EF 2
EF 2

16
Lundstrom Fall 2012

EF 1  qVDS
x

how transistors work

2007 N-MOSFET
EC
VGS

VGS
(Court
Courtesy, Shuji Ikeda, ATDF, Dec. 2007)

EC
17
Lundstrom Fall 2012

top of the barrier / virtual source

ID

under strong control of gate with

weak influence of the drain

W Qn 0  X x (0)

For large VDS, most of the

additional voltage drop occurs on
the drain end of the channel.

EC x
0

In a well-designed
transistor, the height of
the energy barrier is
mostly controlled by the
gate voltage and only
weakly controlled by the
drain voltage.
18

Lundstrom Fall 2012

2D energy band diagrams

VGS ! VT

n-Si

VD

n-Si
y

p-Si
x

We have been discussing energy band diagrams from the

source to the drain along the top of the Si, but more generally,
we should look at the 2D energy band diagram.
19
Lundstrom Fall 2012

2D energy band diagram on n-MOSFET

(a)

a) device

(b)

b) equilibrium (flat band)

(c)
c) equilibrium (S > 0)

(d)
d) non-equilibrium with VG and VD > 0
applied
20

FN

Lundstrom Fall
2012
20
S.M. Sze, Physics of Semiconductor
Devices,
1981 and Pao and Sah.

essential physics of a transistor

A MOSFET (and most transistors) are barriercontrolled devices.

Lundstrom Fall 2012

21

MOSFET IV characteristic
gate-voltage
controlled
current source

circuit
symbol

on-current

ID
VGS

VDS

VGS
S

gate-voltage
controlled
resistor
(Courtesy, Shuji Ikeda, ATDF, Dec. 2007)

2
Lundstrom Fall 2012

MOSFET IV
L
0

VGS ! VT

n-Si

current is charge per unit time

VD

n-Si

ID

W Qn x X x ( x)

Q
C{
F
V

p-Si


V 

Qn | Cox VGS  VT

MOS electrostatics

Qn | 0
Cox

3
Lundstrom Fall 2012

H ox
tox

GS

F cm 2

C m2

MOSFET IV: low VDS

L
VGS ! VT

VD

VGS

Qn x | Cox VGS  VT

ID

W Qn x X x ( x)

Qn

 Cox VGS  VT 

X x
4

Ex

 PeffE x

 VDS L


gate-voltage
controlled
resistor

ID
Lundstrom Fall 2012

W
Peff Cox VGS  VT VDS
L

MOSFET IV: pinch-off at high VDS

VGS ! VT

Qn x Cox VGS  VT  V( x)
Note: thickness of channel
illustrates the areal density of
electrons not the actual
thickness.

VD

V xpinch 

VGS  VT 

Qn xpinch | 0
Electric field is very large in
the pinch-off region.
5
Lundstrom Fall 2012

pinch off in the channel

pinch-off
point
EC x EC 0  qV x

E x

1 dEC x

dx

EC

VGS

6
Lundstrom Fall 2012

MOSFET IV: high VDS

VGS ! VT

gate-voltage
controlled
current source

VD
V xpinch 

VGS  VT 
VGS

Qi x Cox VGS  VT  V( x)

ID

W Qi x X x ( x)

W Qi 0  X x (0)

Qn 0  Cox VGS  VT 

X 0 
7

 PeffE x 0 

E x (0) |  V xpinch  L  VGS  VT  L

ID

W
2
Peff Cox VGS  VT 
2L

velocity saturation

VGS  VT  |
velocity cm/s --->

1.0 V
| 3 u 10 5 V/cm
30 nm

107

X X sat
X PE
105
104
electric field V/cm --->

8
Lundstrom Fall 2012

MOSFET IV: velocity saturation

0

VG

xpinch  L

E x !! 10 4

ID

W Qn x X x ( x)

Qn

 Cox VGS  VT 

Xx

X sat

VD

(Courtesy, Shuji Ikeda, ATDF, Dec. 2007)

ID

9
Lundstrom Fall 2012

WCox X sat VGS  VT 

velocity cm/s --->

signature of velocity saturation

107

X X sat

X PE
104

105

electric field V/cm --->

(Courtesy, Shuji Ikeda, ATDF, Dec. 2007)

ID
10
Lundstrom Fall 2012

WCox X sat VGS  VT 

Velocity (cm/s)

velocity overshoot

EC

Pm 

X SAT

Pm 

D. Frank, S. Laux, and M. Fischetti, Int. Electron Dev. Mtg., Dec., 1992.
11
Lundstrom Fall 2012

MOSFET: IV (re-cap)
I DLIN

W
Peff Cox VGS  VT VDS
L

ID
I DSAT

VDSAT
12

WCox X sat VGS  VT 

VD

We have developed a 2-piece approximation to the MOSFET IV

characteristic.
Lundstrom Fall 2012

2-piece model for ID(VG, VD)

ID

VDSAT

VDSAT

VD d VDSAT : I D

I DLIN

VD ! VDSAT : I D

I DSAT

X SAT L
Peff

VD

We can improve this model, but

13
Lundstrom Fall 2012

I DLIN

W
Peff Cox VG  VT VD
L

I DSAT

WCox X sat VG  VT 

discussion
The model we have outlined is based on physics that is valid
for long channel MOSFETs from the 1960s, 70s, and early
80s.
but:
1) Mobility is a concept that describes diffusive channels (many
MFPs long).
2) The velocity does not saturate in short, high-field regions (it
overshoots)
Lundstrom Fall 2012

14

discussion

It turns out, however, that our 2-piece model can be extended

into a semi-empirical model for the MOSFET that is
surprisingly accurate if we treat the mobility and
saturation velocity as empirical parameters.
In this short course, we will show that with a proper
understanding of nanoscale MOSFETs, these empirical
parameters can be given clear physical interpretations.

Lundstrom Fall 2012

15

the virtual source model

The first step is to extend the two-piece model into a

simple version of the semi-empirical VS model (but still
based on traditional concepts).

As the course develops, we will discuss how to extend

this simple model into a physically sound model for
nanoscale transistors.

16
Lundstrom Fall 2012

energy bands
E

n0

NC eEF  EC  kBTL
EC

EG

EF
EV

p0

n0 p0

ni2

NV eEV  EF  kBTL
y

Assumptions:
i) equilibrium, ii) Boltzmann carrier statistics, iii) uniform electrostatic potential
Lundstrom Fall 2012

electrostatic potential

VG ! 0

+
+
+
+
+
+
+

p0 x  NA

p0 x | NA

y
0
n

\ y

\S

surface potential

y
Lundstrom Fall 2012
3

electrostatic potential and energy bands

EC ( y) constant  q\ ( y)

The energy bands will bend when the

electrostatic potential changes with position.

Lundstrom Fall 2012

4

band bending
n0 ( y)

NC eEF  EC ( y) kBTL

slope = electric field

EC ( y) EC 0  q\ ( y)
EF
EV ( y) EC ( y)  EG

p0 ( y)

NV eEV ( y) EF  kBTL

y
increasing electrostatic potential
Lundstrom Fall 2012

1D MOS electrostatics (L >> Tox)

normal to the channel

V 0

V VG

V 0

V 0

y
Lundstrom Fall 2012
6

1D MOS electrostatics (L >> Tox)

V 0

V 0

V VG

x
V 0
Lundstrom Fall 2012
7

flat band conditions

\ ( y) constant

SiO 2

EFM

0
EFM
 qVG

flatband voltage VGc

EC

EFM

EF
EV

y
(Ignore metal-semi
workfunction differences for
now.)

(Fermi levels line up at zero

gate voltage.)
Lundstrom Fall 2012
8

electrostatic potential vs. position

surface potential

q\ S

q\ y
EC \ y 0 (arbitrary reference)
EF

qVG ! 0

EFM

EV

EC ( y) constant  q\ ( y)
\ ( y)

EC (f)  EC ( y)
q

Lundstrom Fall 2012

9

accumulation of holes at the surface

bands bend up
surface potential < 0

\S  0
qVG  0
EFM

EC
EF

hole density increases

exponentially

p0 ( y)

EV
p-type Si

NV eEV ( y) EF  kBTL
f

QS

 q p0 ( y)  NA dy C/cm 2
0

(accumulation charge piles up very

near the interface)
Lundstrom Fall 2012

10

depletion of holes at the surface

bands bend down

\S ! 0

surface potential > 0

EC
EF

qVG ! 0

space charge density:

EV

EFM
y
WD

p0 ( y)

NV eEV ( y) EF  kBTL | 0

n0 ( y)

NC eEF  EC ( y) kBTL | 0

U( y) |  qNA
U( y) | 0
Lundstrom Fall 2012

y  WD 

y t WD 

C cm 3

C cm 3
11

Poisson equation
d D y
U( y)
dy

\S ! 0
EC

dE
dy

EF

qVGc ! 0

U( y)
H Si

EV

EFM
y
WD

E y 

d\ y
dy

d 2\
dy2

U( y)
H Si

Lundstrom Fall 2012

12

depletion (ii)
dE
dy

U( y)  qNA

U( y)
H Si

\S ! 0

ES

EC

dE
dy

 qNA H Si

EF

qVGc ! 0

EV

WD
y

WD
Lundstrom Fall 2012

qNA
E y
WD  y
H Si
qNAWD QS
ES
H Si
H Si

13

depletion (iii)
E

ES

ES

\S ! 0

dE
dy

qNAWD H Si
 qNA H Si

EC

WD

EF

\ y  E ( y) dy

EV

qVGc ! 0

\S

WD

WD
Lundstrom Fall 2012

1
E SWD
2
2H Si\ S qNA
14

depletion (iv)
2H Si\ S qNA

WD

\S ! 0

QS

 qNAWD

 2 qNAH Si\ S

EC
(depletion charge)

EF

qVGc ! 0

EV

QS | QD ~ \ S

(very close)

y
WD
Lundstrom Fall 2012

15

onset of inversion
Electron concentration in the bulk:

nB

\ S !! 0

ni2 NA  pB

Electron concentration at the surface:

n0 ( y 0)

EC

n0 ( y 0) nBeq\ S

EF
EV

qVGc ! 0

y
WD

NC eEF  EC (0) kBTL
kBTL

Band bending to make electron

concentration at the surface = hole
concentration in the bulk:

nBeq\ S

kBTL

NA

\S
\B

16

2\ B

kBTL NA
ln
q
ni

inversion
n

QS

QS

QD  Qn

WT

\S

2\ B

\B

kBT NA
ln
q
ni

Hard to bend the band further.

depletion
charge
inversion
charge

WT

2H Si 2\ B  qNA

Electron charge piles up very

near the surface.

Lundstrom Fall 2012

17

MOS electrostatics
accumulation

depletion/
inversion

flat band

q\ S  0

q\ S ! 0
EC

EC

EC

EF

EF

VG
EF

VG

VG

\S  0

EV

EV

EV

\S

Lundstrom Fall 2012

\S ! 0
18

MOS electrostatics
log10 QS \ S 
C/cm2

~ e q\ S / 2 kBT

EC

~ e q\ S / 2 kBT
VG

EF
EV

~ \S

\S
Lundstrom Fall 2012

\S

0
19

wrap up
1) The gate voltage bends the bands in the
semiconductor.
2) Charge results from accumulation, depletion, or
inversion.
3) To understand MOSFETs, we need to understand
how the inversion charge is related to the gate
voltage. (Or equivalently, how the surface potential is
related to the gate voltage.)
Lundstrom Fall 2012
20