PD - 97190

IRGB4062DPbF
IRGP4062DPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE
Features

Low VCE (ON) Trench IGBT Technology

Low switching losses
Maximum Junction temperature 175 C
5 S short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (ILM)
Positive VCE (ON) Temperature co-efficient
Ultra fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package

VCES = 600V
IC = 24A, TC = 100C

tSC 5s, TJ(max) = 175C

VCE(on) typ. = 1.65V

n-channel
C

Benefits
High Efficiency in a wide range of applications
Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
Rugged transient Performance for increased reliability
Excellent Current sharing in parallel operation
Low EMI

C
E
C
G

E
C
G
TO-220AB

G
Gate

TO-247AC

C
Collector

E
Emitter

Absolute Maximum Ratings

Parameter

Max.

Units
V

VCES

Collector-to-Emitter Voltage

600

IC @ TC = 25C

Continuous Collector Current

48

IC @ TC = 100C

Continuous Collector Current

24

ICM
ILM

Pulse Collector Current

Clamped Inductive Load Current

IF @ TC = 25C

Diode Continous Forward Current

IF @ TC = 100C
IFM

Diode Continous Forward Current

Diode Maximum Forward Current

VGE

Continuous Gate-to-Emitter Voltage

20

Transient Gate-to-Emitter Voltage

30

PD @ TC = 25C

Maximum Power Dissipation

250

PD @ TC = 100C

Maximum Power Dissipation

125

TJ

Operating Junction and

TSTG

Storage Temperature Range

96

96

48
24

96
V
W

-55 to +175
C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw

10 lbfin (1.1 Nm)

Thermal Resistance
Min.

Typ.

Max.

RJC (IGBT)

Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB

Parameter

0.60

RJC (Diode)

Thermal Resistance Junction-to-Case-(each Diode) TO-220AB

1.53

RJC (IGBT)

Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC

0.65

RJC (Diode)

Thermal Resistance Junction-to-Case-(each Diode) TO-247AC

1.62

RCS

Thermal Resistance, Case-to-Sink (flat, greased surface)

0.50

RJA

Thermal Resistance, Junction-to-Ambient (typical socket mount)

80

Units

C/W

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02/24/06

IRGB/P4062DPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Min.

Typ.

V(BR)CES

Collector-to-Emitter Breakdown Voltage

Parameter

600

V(BR)CES/TJ

Temperature Coeff. of Breakdown Voltage

0.30

1.60

1.95

2.03

2.04

VCE(on)

Collector-to-Emitter Saturation Voltage

Max. Units
V

Conditions
VGE = 0V, IC = 100A

IC = 24A, VGE = 15V, TJ = 150C

4.0

6.5

Threshold Voltage temp. coefficient

-18

gfe
ICES

Forward Transconductance

17

Collector-to-Emitter Leakage Current

2.0

25

VGE = 0V, VCE = 600V

775

VGE = 0V, VCE = 600V, TJ = 175C

2.6

IF = 24A

IGES

Gate-to-Emitter Leakage Current

1.80

1.28

100

9,10,11

VCE = VGE, IC = 700A

Gate Threshold Voltage

CT6
5,6,7

IC = 24A, VGE = 15V, TJ = 175C

VGE(th)

Diode Forward Voltage Drop

CT6

V/C VGE = 0V, IC = 1mA (25C-175C)

IC = 24A, VGE = 15V, TJ = 25C

VGE(th)/TJ

VFM

Ref.Fig

9, 10,

mV/C VCE = VGE, IC = 1.0mA (25C - 175C)

S VCE = 50V, IC = 24A, PW = 80s

11, 12

IF = 24A, TJ = 175C
nA

VGE = 20V

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Min.

Typ.

Qg

Total Gate Charge (turn-on)

Parameter

50

Max. Units
75

Qge

Gate-to-Emitter Charge (turn-on)

13

20

Qgc

Gate-to-Collector Charge (turn-on)

21

31

Eon

Turn-On Switching Loss

115

201

Eoff

Turn-Off Switching Loss

600

700

Etotal

Total Switching Loss

715

901

td(on)

Turn-On delay time

41

53

tr

Rise time

22

31

Conditions

Ref.Fig

IC = 24A
nC

24

VGE = 15V

CT1

VCC = 400V
IC = 24A, VCC = 400V, VGE = 15V
J

CT4

RG = 10, L = 200H, LS = 150nH, TJ = 25C

Energy losses include tail & diode reverse recovery

IC = 24A, VCC = 400V, VGE = 15V

ns

CT4

RG = 10, L = 200H, LS = 150nH, TJ = 25C

td(off)

Turn-Off delay time

104

115

tf

Fall time

29

41

Eon

Turn-On Switching Loss

420

IC = 24A, VCC = 400V, VGE=15V

RG=10, L=100H, LS=150nH, TJ = 175C

f

Eoff

Turn-Off Switching Loss

840

Etotal

Total Switching Loss

1260

Energy losses include tail & diode reverse recovery

td(on)

Turn-On delay time

40

IC = 24A, VCC = 400V, VGE = 15V

tr

Rise time

24

td(off)

Turn-Off delay time

125

tf

Fall time

39

Cies

Input Capacitance

1490

Coes

Output Capacitance

129

VCC = 30V

Cres

Reverse Transfer Capacitance

45

f = 1.0Mhz
TJ = 175C, IC = 96A

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

ns

13, 15
CT4
WF1, WF2
14, 16

RG = 10, L = 200H, LS = 150nH

CT4

TJ = 175C

WF1
WF2

pF

VGE = 0V

23

VCC = 480V, Vp =600V

CT2

Rg = 10, VGE = +15V to 0V

SCSOA

Short Circuit Safe Operating Area

VCC = 400V, Vp =600V

22, CT3

Rg = 10, VGE = +15V to 0V

Erec
trr

Reverse Recovery Energy of the Diode

Diode Reverse Recovery Time

Irr

Peak Reverse Recovery Current

WF4

TJ = 175C

89

ns

VCC = 400V, IF = 24A

37

VGE = 15V, Rg = 10, L =200H, Ls = 150nH

621

17, 18, 19
20, 21
WF3

Notes:
VCC = 80% (VCES), VGE = 20V, L = 100H, RG = 10.
This is only applied to TO-220AB package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.

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IRGB/P4062DPbF
50

300

45
250

40
35

200

Ptot (W)

IC (A)

30
25
20

150
100

15
10

50

5
0

0
0

20

40

60

80 100 120 140 160 180

20

40

60

80 100 120 140 160 180

T C (C)

T C (C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

Fig. 2 - Power Dissipation vs. Case

Temperature
1000

1000

100

100
IC (A)

IC (A)

10sec
10
100sec
1

10

1msec

Tc = 25C
Tj = 175C
Single Pulse

DC

0.1

1
1

10

100

1000

10000

10

100

VCE (V)

VCE (V)

Fig. 3 - Forward SOA

TC = 25C, TJ 175C; VGE =15V

Fig. 4 - Reverse Bias SOA

TJ = 175C; VGE =15V
90

90

80

80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

ICE (A)

60
50

70

VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

60

ICE (A)

70

40

50
40

30

30

20

20

10

10
0

0
0

4
VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40C; tp = 80s

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1000

VCE (V)

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25C; tp = 80s

IRGB/P4062DPbF
90

120

VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

80
70

80

50

IF (A)

ICE (A)

60

100

40
30

-40c
25C
175C

60
40

20
20

10
0

0.0

1.0

Fig. 8 - Typ. Diode Forward Characteristics

tp = 80s

20

20

18

18

16

16

14

14
ICE = 12A

VCE (V)

VCE (V)

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 175C; tp = 80s

ICE = 24A

10

ICE = 48A

3.0

VF (V)

VCE (V)

12

2.0

12
10

ICE = 48A

ICE = 12A
ICE = 24A

0
5

10

15

20

10

VGE (V)

15

20

VGE (V)

Fig. 10 - Typical VCE vs. VGE

TJ = 25C

Fig. 9 - Typical VCE vs. VGE

TJ = -40C
120

20
18

100

16

T J = 25C
TJ = 175C

80

12

ICE = 12A

ICE (A)

VCE (V)

14

ICE = 24A
ICE = 48A

10
8

60
40

6
4

20

2
0

0
5

10

15
VGE (V)

Fig. 11 - Typical VCE vs. VGE

TJ = 175C

20

10

15

VGE (V)

Fig. 12 - Typ. Transfer Characteristics

VCE = 50V; tp = 10s

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IRGB/P4062DPbF
1800

1000

1600
1400

Energy (J)

1200

Swiching Time (ns)

tdOFF

EOFF

1000
800

EON

600

100
tdON
tF
10

tR

400
200
0

10

20

30

40

50

60

10

20

30

50

IC (A)

IC (A)

Fig. 13 - Typ. Energy Loss vs. IC

TJ = 175C; L = 200H; VCE = 400V, RG = 10; VGE = 15V

Fig. 14 - Typ. Switching Time vs. IC

TJ = 175C; L = 200H; VCE = 400V, RG = 10; VGE = 15V

1600

1000

1400

Swiching Time (ns)

EOFF

1200

Energy (J)

40

1000
EON

800
600

tdOFF

100
tdON

400

tF

200

tR

10
0

25

50

75

100

125

25

50

75

100

125

RG ()

Rg ()

Fig. 15 - Typ. Energy Loss vs. RG

TJ = 175C; L = 200H; VCE = 400V, ICE = 24A; VGE = 15V

Fig. 16 - Typ. Switching Time vs. RG

TJ = 175C; L = 200H; VCE = 400V, ICE = 24A; VGE = 15V

40

45
RG = 10

40

35

35
30

RG = 22

IRR (A)

IRR (A)

30
25

RG = 47

20

20

RG = 100

15

15

10

10

5
0

10

20

30

40

50

IF (A)

Fig. 17 - Typ. Diode IRR vs. IF

TJ = 175C

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25

60

25

50

75

100

125

RG ()

Fig. 18 - Typ. Diode IRR vs. RG

TJ = 175C

IRGB/P4062DPbF
45

4000

40

3500

35

10

3000
22

QRR (C)

30

IRR (A)

24A

25
20

2500

47
12A

100

2000
1500

15

6.0A
1000

10

500

5
0

500

1000

1500

500

Fig. 20 - Typ. Diode QRR vs. diF/dt

VCC = 400V; VGE = 15V; TJ = 175C

Fig. 19 - Typ. Diode IRR vs. diF/dt

VCC = 400V; VGE = 15V; IF = 24A; TJ = 175C

1000

Time (s)

RG = 47

RG = 10

RG = 100

400

200

16

280

14

240

12

200

10

160

120

80
40

0
0

10

20

30

40

50

60

14

16

18

16
VGE, Gate-to-Emitter Voltage (V)

Capacitance (pF)

12

Fig. 22 - VGE vs. Short Circuit Time

VCC = 400V; TC = 25C

Fig. 21 - Typ. Diode ERR vs. IF

TJ = 175C

Cies

1000

Coes

100

Cres
10

V CES = 300V
V CES = 400V

14
12
10
8
6
4
2
0

20

40

60

80

VCE (V)

Fig. 23 - Typ. Capacitance vs. VCE

VGE= 0V; f = 1MHz

10

VGE (V)

IF (A)

10000

Current (A)

Energy (J)

800

RG = 22

1500

diF /dt (A/s)

diF /dt (A/s)

600

1000

100

5 10 15 20 25 30 35 40 45 50 55
Q G, Total Gate Charge (nC)

Fig. 24 - Typical Gate Charge vs. VGE

ICE = 24A; L = 600H

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IRGB/P4062DPbF
1

Thermal Response ( Z thJC )

D = 0.50
0.20

0.1

0.10
0.05
0.02
0.01

0.01

R1
R1
J
1

C
2

Ri (C/W) i (sec)
0.2329 0.000234
0.3631

0.007009

Ci= i/Ri
Ci i/Ri

SINGLE PULSE
( THERMAL RESPONSE )

0.001

R2
R2

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-220AB

Thermal Response ( Z thJC )

10

0.1

0.01

D = 0.50
0.20
0.10
0.05
0.02
0.01

R1
R1
J
1

R2
R2
2

Ci= i/Ri
Ci i/Ri

0.001

0.0001
1E-006

SINGLE PULSE
( THERMAL RESPONSE )

1E-005

R3
R3
C

Ri (C/W) i (sec)
0.476
0.000763
0.647

0.003028

0.406

0.023686

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-220AB

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IRGB/P4062DPbF
1

Thermal Response ( Z thJC )

D = 0.50
0.20

0.1

0.10
0.05

0.02
0.01

R1
R1
J
1

0.01

R2
R2
C
2

Ci= i/Ri
Ci i/Ri

SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006

Ri (C/W) i (sec)
0.2782 0.000311
0.3715 0.006347

1E-005

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC

Thermal Response ( Z thJC )

10

0.1

D = 0.50
0.20
0.10
0.05
0.02

0.01

0.01

R1
R1
J
1

R2
R2
2

Ci= i/Ri
Ci i/Ri

0.001

0.0001
1E-006

SINGLE PULSE
( THERMAL RESPONSE )

1E-005

0.0001

R3
R3
C

Ri (C/W) i (sec)
0.693
0.001222
0.621

0.005254

0.307

0.038140

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-247AC

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IRGB/P4062DPbF
L

L
VC C

D UT

80 V

DU T
4 80V

Rg

1K

Fig.C.T.1 - Gate Charge Circuit (turn-off)

Fig.C.T.2 - RBSOA Circuit

d io d e clamp /
DU T

4x
DC

- 5V

360V

DU T /
D RIVER

DUT

VCC

Rg

Fig.C.T.3 - S.C. SOA Circuit

R=

Fig.C.T.4 - Switching Loss Circuit

VCC
ICM

C force

400H
D1

10K
C sense

DUT

VCC

G force

DUT

0.0075

Rg
E sense
E force

Fig.C.T.5 - Resistive Load Circuit

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Fig.C.T.6 - BVCES Filter Circuit

IRGB/P4062DPbF
500

25

500

50

400

20

400

40

300

15

300

tf
90% ICE

10

5% ICE

100

200

30

90% test

100

5% VCE

0.50

1.00

1.50

-100
11.70

11.80

11.90

QRR

500

250

400

200

tRR

VCE
300

150

VCE (V)

I RR (A)

5
0
-5
-10

-10
12.10

Fig. WF2 - Typ. Turn-on Loss Waveform

@ TJ = 175C using Fig. CT.4

25

10

12.00

Time (s)

Fig. WF1 - Typ. Turn-off Loss Waveform

@ TJ = 175C using Fig. CT.4

15

10

EON
-5
2.00

Time(s)

20

10% test

EOFF Loss
0.00

20

5% VCE

-100
-0.50

TEST
C

10%
Peak
IRR

Peak
IRR

-15

ICE
200

100

100

50

I CE (A)

200

VCE (V)

VCE (V)

tr

-20
-25
-0.05

10

0.05

0.15

-100
-5.00

0.00

5.00

-50
10.00

time (S)

time (S)

Fig. WF3 - Typ. Diode Recovery Waveform

@ TJ = 175C using Fig. CT.4

Fig. WF4 - Typ. S.C. Waveform

@ TJ = 25C using Fig. CT.3

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IRGB/P4062DPbF
TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

(;$03/( 7+,6,6$1,5)
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TO-220AB package is not recommended for Surface Mount Application.

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11

IRGB/P4062DPbF
TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

(;$03/( 7+,6,6$1,5)3(
:,7+$66(0%/<
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(+
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LQGLFDWHV/HDG)UHH

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5(&7,),(5
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TO-247AC package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/06

12

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