Outline

NMOS Operation in
Cut off ,Linear and Saturation mode
Related Equations

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Recap
Physics of MOSFET
NMOS

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MOSFET
The operation of PMOS transistor is analogous
to the NMOS transistor, with the exception
that the majority carriers are holes and the
voltages are negative with respect to the
substrate.

CMOS DESIGN

MOS Transistors
Silicon, forms the basic starting material
MOS structure is created by superimposing
several layers of conducting,insulating and
transistor forming materials
CMOS technology provides two types of
transistors
Negatively (-ve)
ve) diffused silicon that is rich in electrons : NMOS
Positively (+ve) doped silicon that is rich in holes
: PMOS

CMOS DESIGN

MOSFET

Perspective View

Cross sectional View

Operation of nmos with no gate voltage

applied

Channel Formation In NMOS

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Accumulation mode [ 0 < Vg ]

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Vg = Vgs = Gate Voltage

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Operation of nmos with gate

voltage applied

What happens if Gate Voltage Vg = Vgs is increased ?

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Depletion Mode [ 0<Vg<Vt ]

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Inversion mode [Vg >Vt ]

Enhacement NMOS
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Copyright 2005 Pearson

Addison-Wesley. All rights
reserved.

2-12
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MOSFET
NMOS

Enhacement NMOS

PMOS

Depletion NMOS

Enhacement PMOS

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Depletion PMOS

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Applying a small VDS

ID Vs Vds Characterstics when Vds

small (Linear Region)

Chapter 4

MOS field-Effect
Effect Transistors (MOSFETs)

Operation as VDS increased

Figure 4.5

Applying a small VDS

ID Vs Vds Characterstics when Vds

small (Linear Region)

Conductance of channel propotional to V -Vt

(Vov,overdrive voltage)
voltage
GS

Chapter 4

MOS field-Effect
Effect Transistors (MOSFETs)

Operation as VDS increased

Figure 4.5

VGS

VGS - VDS

The
The voltage between the gate and points along the
channel decreases from VGS at the source end to
VGS VDS at the drain end

ID Vs VDS Characterstics

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Channel is
Pinched off
point

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Effect on Channel as VDS increased

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Chapter 4

MOS field-Effect
Effect Transistors (MOSFETs)
Figure 4.15

Channel Length Modulation

i Vs V relationship
D

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DS

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Current Equation in Linear/Triode

region
Linear Region :

saturation
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Current Equation in saturation region

Linear Region :

Substituting VGS Vt = VDS

saturation
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I-V
V Characteristics of MOSFET

HomeWork
Derive Current equation in linear and
saturation mode for NMOS
(Ref: Page 243 Sedra Smith)

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Drain Current
ID W/L (Aspect Ratio)

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NMOS Transistor

CMOS DESIGN

NMOS Transistor - Symbolic Representation

NMOS Transistor with vGS and vDS applied

iD - vDS Characterstics
Triode
Region

Saturation Region

v = v + 2.0
GS

Channel is
Pinched off

v = v + 1.5
GS

v = v + 1.0
GS

v = v + 0.5
GS

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iD - vDS Characterstics