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Lecture 1
Introduction to Physical Electronics
Course Instructor: Marko Sokolich
28 September, 2015
Course Philosophy
Lecture
-- attributed to
Kong FuziConfucius
(551 479 bce)
Your Notes,
Slides and
Text
The importance of Homework has been known for at least 2500 years !
Semiconductor Devices
When?
Computers
1960s
Watches
Mechanical Calculators,
Tubes, Magnetic cores
Mechanical Movements
1970s
Cell Phones
1980s
CD Players
1980
Satellites
1957
Radio, TV
Vacuum Tubes
Automobiles
1950s
1970s
1980s
Airplanes
1980s
Traffic Lights
Light Bulbs
1990s
Smart Phones
Cell Phones
2000
Ambient Lighting
2010
10
11
12
13
14
15
16
Emitter
Collector
Battery Voltage
BlueLight
Red
Light
vacuum
+
Battery
Ammeter
Frequency of Light
eV = h - eVo
Observations by Lenard in 1902
Explanation by Einstein in 1905
Einstein won Nobel Prize in 1921
17
18
19
20
21
Crystal Lattices
22
E0
E0 +
E0 +
E0
E0
As atoms are moved
closer together the energy
levels split
23
E0 +
Eg.
E0
24
Empty
Filled
Conduction band
Valence band
Conduction band
Empty
Metal
Eg ~ 5 V
Empty
Conduction band
Valence band
Eg ~ 1 V
Filled
Valence band
Filled
Insulator
Semiconductor
2015 Marko Sokolich All Rights Reserved
25
Semiconductors
III
IV
26
Crystal Engineering
Semiconductors can be
engineered by growing
different materials on top
of each other.
Any compound
along this line can
be grown on an InP
wafer
27
+4
+3
+5
C
Si
Ge
Sn
B
Al
Ga
In
N
P
As
Sb
E
+4
+4
+4
+4
+4
+4
+4
+4
Hole
+4
+4
+4
+4
Free
Electron
28
+4
+3
+5
C
Si
Ge
Sn
B
Al
Ga
In
N
P
As
Sb
Free
Electron
+4
+4
+5
+4
+4
+4
+4
+4
+4
+4
+4
+4
+3
+4
Hole
29
Semiconductor Statistics
0,
U0
P ( )
exp
P ( 0)
kT
Ratio of the probability that
the system has energy to
the probability that it has
energy 0
30
Semiconductor Statistics
Two state system in thermal
and diffusive* equilibrium with
a reservoir
0,
U0
P (1, )
F
exp
P (0,0)
kT
Normalize
P (1, ) P(0,0) 1
1
P (1, )
F
exp
1
kT
F is called the Fermi energy
31
+4
+3
+5
C
Si
Ge
Sn
B
Al
Ga
In
N
P
As
Sb
Free
Electron
+4
+4
+4
+4
+4
+4
+4
+4
+4
+4
+4
+4
32
semiconductor
t=0
As time passes the
carriers diffuse
and recombine
t1
t2
33
V
semiconductor
t=0
t1
t2
34
v =
InGaAs
InP
GaAs
Peak velocity up to 0.3 m/picosecond (ps)
Si
0.1V/m
2015 Marko Sokolich All Rights Reserved
1V/m
35
Electrical Conductivity
36
Conductivity
L
Area
Semiconductor 1
J nev neE
I Area J AJ
I
1
1
R
R
V EL E
V
L
I AneE Ane
V
L
37
Junctions
Metal,
Insulator or
Semiconductor 2
Semiconductor 1
+V
pn Diodes
MS Diodes
tunneling
38
I I 0 e
eV
kT
2.0E-03
1.5E-03
I(A)
1.0E-03
5.0E-04
I 0 4 10 15 Amperes
0.0E+00
0
0.2
0.4
0.6
0.8
39
I op eGop Ln L p W A
Iop
-xp-Ln
-xp
2015 Marko Sokolich All Rights Reserved
xn xn+Lp
40
Im
Iop
RL
RL
100
Current, mA
Full Sun
120
80
Half Sun
60
40
0.13 Sun
20
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Voltage, V
Vm
41
Fp
Eg
42
43
44