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a)
Biaxial strain:
If we have a substrate such as Si and we grow a layer such as
SiGe on the substrate and we form gate and source and drain
(drain and source has implement by P or B). We should apply
strain to layer ( in this example our strain is compressive). This
strain belongs to all part of layer such as source and drain and
channel. In biaxial strain we have defect in layer and we have
alloy scattering which decreases the mobility.
Uniaxial strain:
If we etch two part of Si substrate ( in source and drain part but
not in channel part) and we grow SiGe layer which is doped by
B on part we etched. We should apply strain on the source and
drain parts and we have the same strain in channel part ( our
channel is from Si material), in this case we apply compressive
strain and we have compressive strain in source and channel
and drain.
You can see schematic picture for biaxial and uniaxial below:
b)
m is effective mass
causes to split
2 4 electrons
and it means
after
tensile strain
In both cases the effective mass and scattering decrease and
relaxation time ( increase which cause increase mobility
according equation:
c)
Spreading resistance and contact resistance
d)
According of equitation
We need to decrease
the effective mass of hols and electrons which do respectively
by tensile and compressive strain and also decreasing of
scattering and increasing the relaxation time which do by
applying strain (compressive or tensile).
e)
Threading dislocation and stacking fault are extended defects.
Threading dislocation grow to surface and stacking fault causes
by any defect in layer ( such as dont grow layer in some part , I
mean layer is empty in some part ) and we can see stacking
fault from top of the sample as square with cross section or in
microscopy image we can see a V shape in layer.
2)
a)
0.61
sin
3)
We can do topography by AFM from three modes:
Contact mode: which cantilever ( placed a tip in end of
cantilever) and because of repulsive interatomic force the
cantilever bend during the moving , it can take as asignal for
topography ( this bending cause to change in placement of
reflection laser over the cantilever)
Non contact mode: cantilever vibrate over the sample by its
resonant frequency and because of attractive interatomic force
the resonant frequency chand and this changing can take as a
signal for topography
compare to
c)
+
B
+
B has higher yield )
b) next page
7)
a) Bright field, because the field seems lighter than some parts
in image which is darker, it means the more beams could pass
from the substrate and we have more absorption in dark parts.
b)
c)
Brighter and darker in bright field causes by three response:
Mass contrast : because of mass, if we have higher mass , it
means more absorption and darker points
Thickness: if thickness is higher the less beams can pass
through the thickness and it means darker part
Bragg contrast: if our crystal in sample is aline zoom axis. We
see dark part.
In our image we can have darker or brighter part because of
these three reasons.
d)
we have the same material, so it can depended of thickness or
bragg contrast
8)
a)
Precipitates defect in second layer and dislocation defects in
top of image and stacking fault in top of image which shows by
V shape.
b)
compressive strain because the layer pick is before the
substrait pick
c)
plane (113) has taken in small angle it means beams dont
penetrate too much and we have brag condition for surface of
sample. We can see the layers and substrate picks as well but
we have dispersion with picks which is because of defects ( in
top and middle of image)
plan (224) has taken in bigger angle , it means beams
penetrate more in the sample and we have brag condition for
bigger area of sample, we can see picks for layers and
substrate but we have yet defects
plan (115) has taken in biggest angel and it means our beam
penetrate more deeply and we can see picks for layer and
substrat but we have good quality in deeper layer and substrate
without any defect. Our sample is good in deeper layer and
substrate. ( without deferct)