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  AON6788
  AON6788
 

AON6788

  30V N-Channel MOSFET
 

30V N-Channel MOSFET

 

SRFET TM

General Description

 

Product Summary

 

SRFET TM AON6788 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS(ON) ,and low gate charge. This device is

V DS

30V

I D (at V GS =10V)

 

80A

R DS(ON) (at V GS =10V)

 

< 4m

suitable for use as a low side FET in SMPS, load switching and general purpose applications.

R DS(ON) (at V GS = 4.5V)

< 4.9m

100% UIS Tested 100% R g Tested

100% UIS Tested 100% R g Tested
 

DFN5X6

 
 

Top View

 
D G S
D
G
S
 

Top View

 

Bottom View

PIN1
PIN1
PIN1 1 8 2 7 3 6 4 5 SRFET T M
1 8 2 7 3 6 4 5
1 8
2 7
3 6
4 5

SRFET TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Absolute Maximum Ratings T A =25°C unless otherwise noted

 

Parameter

Symbol

 

Maximum

 

Units

Drain-Source Voltage

 

V DS

 

30

V

Gate-Source Voltage

 

V GS

 

±12

V

Continuous Drain

T

C =25°C

I D

 

80

 

Current G

T

C =100°C

 

62

A

Pulsed Drain Current C

 

I DM

 

200

Continuous Drain

T

A =25°C

I DSM

 

17

A

Current

T

A =70°C

 

14

Avalanche Current C

 

I AS , I AR

 

40

A

Avalanche energy L=0.1mH C

 

E AS , E AR

 

80

mJ

 

T

C =25°C

P D

 

78

W

Power Dissipation B

T

C =100°C

 

31

 

T

A =25°C

P DSM

 

2

W

Power Dissipation A

T

A =70°C

 

1.3

Junction and Storage Temperature Range

 

T J , T STG

 

-55 to 150

 

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient A

t

10s

R JA

24

30

°C/W

Maximum Junction-to-Ambient A D

Steady-State

53

64

°C/W

Maximum Junction-to-Case

Steady-State

R JC

1.2

1.6

°C/W

AON6788
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AON6788

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AON6788

Electrical Characteristics (T J =25°C unless otherwise noted)

 

Symbol

Parameter

Conditions

 

Min

Typ

Max

Units

 

STATIC PARAMETERS

 
 

BV DSS

Drain-Source Breakdown Voltage

I D =250 A, V GS =0V

 

30

   

V

I

 

Zero Gate Voltage Drain Current

V DS =30V, V GS =0V

     

0.5

mA

DSS

T

J =125°C

   

100

I

GSS

Gate-Body leakage current

V DS =0V, V GS = ±12V

     

100

nA

 

V

GS(th)

Gate Threshold Voltage

V DS =V GS I D =250 A

 

1.2

1.5

2

V

I

D(ON)

On state drain current

V GS =10V, V DS =5V

 

200

   

A

     

V GS =10V, I D =20A

   

3.2

4

 

R

DS(ON)

Static Drain-Source On-Resistance

T

J =125°C

 

4.7

5.8

m

 

V GS =4.5V, I D =20A

   

3.6

4.9

m

 

g

FS

Forward Transconductance

V DS =5V, I D =20A

   

115

 

S

 

V

SD

Diode Forward Voltage

I S =1A,V GS =0V

   

0.4

 

V

I

S

Maximum Body-Diode Continuous Current G

     

80

A

 

DYNAMIC PARAMETERS

 
 

C

iss

Input Capacitance

 

3500

4380

5250

pF

 

C

oss

Output Capacitance

V GS =0V, V DS =15V, f=1MHz

340

490

640

pF

 

C

rss

Reverse Transfer Capacitance

160

280

400

pF

 

R

g

Gate resistance

V GS =0V, V DS =0V, f=1MHz

0.3

0.7

1.0

 
 

SWITCHING PARAMETERS

 
 

Q

g (4.5V)

Total Gate Charge

 

24

31

38

nC

 

Q

gs

Gate Source Charge

V GS =10V, V DS =15V, I D =20A

8

11

13

nC

 

Q

gd

Gate Drain Charge

5

9

13

nC

t

D(on)

Turn-On DelayTime

   

10

 

ns

t

r

Turn-On Rise Time

V GS =10V, V DS =15V, R L =0.75 ,

 

6

 

ns

t

D(off)

Turn-Off DelayTime

R

GEN =3

 

50

 

ns

t

f

Turn-Off Fall Time

   

7

 

ns

t

rr

Body Diode Reverse Recovery Time

I F =20A, dI/dt=500A/ s

 

9

12

15

ns

 

Q

rr

Body Diode Reverse Recovery Charge

I F =20A, dI/dt=500A/ s

 

17

22

27

nC

A. The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The

Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.

B. The power dissipation P D is based on T J(MAX) =150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150°C. Ratings are based on low frequency and duty cycles to keep

initial T J =25°C.

D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,

assuming a maximum junction temperature of T J(MAX) =150°C. The SOA curve provides a single pulse ratin g.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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R DS(ON) (m )

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 100 10V 4.5V 3V 120 80 7V 90 60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
100
10V
4.5V
3V
120
80
7V
90
60
60
40
30
20
V
GS =2.5V
0
0
0
1
2
3
4
5
I D (A)
I D (A)
V DS =5V 125°C 25°C 1 1.5 2 2.5 3
V DS =5V
125°C
25°C
1
1.5
2
2.5
3

V DS (Volts) Fig 1: On-Region Characteristics (Note E)

5 2 V GS =4.5V 1.8 4 1.6 3 V GS =10V 1.4 2 1.2
5
2
V
GS =4.5V
1.8
4
1.6
3
V
GS =10V
1.4
2
1.2
1
1
0
0.8
0
5
10
15
20
25
30
Normalized On-Resistance

I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)

V GS (Volts)

Figure 2: Transfer Characteristics (Note E) V GS =4.5V I D =20A 17 5 2
Figure 2: Transfer Characteristics (Note E)
V GS =4.5V
I
D =20A
17
5
2
V
GS =10V
10
I D =20A
0
25
50
75
100
125
150
175
200
Temperature (°C)
0

Figure 4: On-Resistance vs. Junction Temperature

18

(Note E) 1.0E+02 1.0E+01 125°C 40 1.0E+00 1.0E-01 25°C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2
(Note E)
1.0E+02
1.0E+01
125°C
40
1.0E+00
1.0E-01
25°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
10 I D =20A 8 6 125°C 4 2 25°C 0 2 4 6 8
10
I
D =20A
8
6
125°C
4
2
25°C
0
2
4
6
8
10
R DS(ON) (m )
I S (A)

V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)

V SD (Volts) Figure 6: Body-Diode Characteristics (Note E)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 V DS =15V I D =20A 8 6 4 2 0 0 20 40
10
V
DS =15V
I
D =20A
8
6
4
2
0
0
20
40
60
80
V GS (Volts)

Q g (nC) Figure 7: Gate-Charge Characteristics

1000.0 100.0 10 s R DS(ON) 10 s limited 10.0 100 s DC 1ms 1.0
1000.0
100.0
10
s
R
DS(ON)
10
s
limited
10.0
100
s
DC
1ms
1.0
10ms
T
J(Max) =150°C
0.1
T
C =25°C
0.0
I D (Amps)
6000 5000 C iss 4000 3000 2000 C oss 1000 C rss 0 0 5
6000
5000
C
iss
4000
3000
2000
C
oss
1000
C
rss
0
0
5
10
15
20
25
30
Capacitance (pF)

V DS (Volts) Figure 8: Capacitance Characteristics

200 160 T =150°C J(Max) T C =25°C 120 17 5 2 80 10 40
200
160
T
=150°C
J(Max)
T
C =25°C
120
17
5
2
80
10
40
0
Power (W)
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 V DS (Volts) 0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V DS (Volts)
0
Pulse Width (s)
18
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=T on
/T
In descending order
D=0.5,
0.3, 0.1, 0.05,
0.02,
0.01,
single
pulse
T
J,PK =T C +P DM .Z
JC .R
JC
R
JC =1.6°C/W
40
1
0.1
P
D
T on
T
Single
Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Z JC Normalized Transient
Thermal Resistance

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 100 T A =25°C 80 T A =100°C 100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
T
A =25°C
80
T
A =100°C
100
60
40
T
A =150°C
10
T
A =125°C
20
1
0
1
10
100
1000
I AR (A) Peak Avalanche Current
Power Dissipation (W)
0 25 50 75 100 125 150
0
25
50
75
100
125
150

Time in avalanche, t A ( s) Figure 12: Single Pulse Avalanche capability (Note C)

100 80 60 40 20 0 Current rating I D (A)
100
80
60
40
20
0
Current rating I D (A)
T CASE (°C) Figure 13: Power De-rating (Note F) 10000 T A =25°C 1000 17
T CASE (°C)
Figure 13: Power De-rating (Note F)
10000
T A =25°C
1000
17
100
5
2
10
10
1
0.00001
0.001
0.1
10
1000
Power (W)
0 25 50 75 100 125 150 0 T CASE (°C) Figure 14: Current De-rating
0
25
50
75
100
125
150
0
T CASE (°C)
Figure 14: Current De-rating (Note F)
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=T on /T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01,
single pulse
T J,PK =T A +P DM .Z
JA .R
JA
1
R JA =64°C/W
40
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Z JA Normalized Transient
Thermal Resistance

Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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S

S

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.0E-01 1.0E-02 V DS =30V 1.0E-03 V DS =15V 1.0E-04 1.0E-05 0 50 100 150
1.0E-01
1.0E-02
V
DS =30V
1.0E-03
V
DS =15V
1.0E-04
1.0E-05
0
50
100
150
200
I R (A)

Temperature (°C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature

40 di/dt=800A/ s 35 125ºC 30 25 25ºC Q rr 20 125ºC 15 I rm
40
di/dt=800A/ s
35
125ºC
30
25
25ºC
Q rr
20
125ºC
15
I rm
25ºC
10
Q rr (nC)

12

10

8

6

4

2

0 5 10 15 20 25 30 I S (A) Figure 18: Diode Reverse Recovery
0 5
10
15
20
25
30
I S (A)
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
30
20
I
s =20A
25
125ºC
15
20
25ºC
15
10
Q rr
10
125ºC
5
5
I rm
25ºC
0
0
0 200
400
600
800
1000
Q rr (nC)

di/dt (A/ s) Figure 20: Diode Reverse Recovery Charge and Peak Current vs. di/dt

0.7 20A 10A 5A 0.6 0.5 0.4 0.3 I S =1A 0.2 0.1 0 0
0.7
20A
10A
5A
0.6
0.5
0.4
0.3
I
S =1A
0.2
0.1
0
0
50
100
150
200
V SD (V)

Temperature (°C) Figure 18: Diode Forward voltage vs. Junction Temperature

14 di/dt=800A/ s 12 125ºC 10 t rr 25ºC 8 6 125ºC 4 S 2
14
di/dt=800A/ s
12
125ºC
10
t
rr
25ºC
8
6
125ºC
4
S
2
25ºC
0
0
5
10
15
20
25
30
I rm (A)
t rr (ns)

3

2.5

2

1.5

1

0.5

0

I S (A) Figure 19: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current

21 4 I s =20A 3.5 18 t 25ºC rr 3 15 2.5 12 125ºC
21
4
I
s =20A
3.5
18
t
25ºC
rr
3
15
2.5
12
125ºC
2
9
1.5
25ºC
S
6
1
3
125º
0.5
0
0
0
200
400
600
800
1000
I rm (A)
t rr (ns)

di/dt (A/ s) Figure 21: Diode Reverse Recovery Time and Softness Factor vs. di/dt

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AON6788

Gate Charge Test Circuit & Waveform

Vgs

+ VDC + - Vds VDC - DUT Vgs Ig
+
VDC
+
-
Vds
VDC
-
DUT
Vgs
Ig

Vgs

10V

Vgs 10V  
 

Qg

   
   
   
Qgs Qgd

Qgs

Qgd

   
Vgs 10V   Qg         Qgs Qgd    
Vgs 10V   Qg         Qgs Qgd    

Charge

Resistive Switching Test Circuit & Waveforms

RL

Vds + DUT Vgs VDC Rg -
Vds
+
DUT
Vgs
VDC
Rg
-

Vdd

Vds

90% 10% Vgs t t r d(on) t f t d(off) t t on off
90%
10%
Vgs
t
t r
d(on)
t f
t d(off)
t
t on
off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

Vgs

L Vds Id + Vgs Vgs VDC Rg - DUT
L
Vds
Id
+
Vgs
Vgs
VDC
Rg
-
DUT

Vdd

2 E = 1/2 LI AR AR Vds I Id Vgs
2
E
= 1/2 LI
AR
AR
Vds
I
Id
Vgs

BV DSS

AR

Diode Recovery Test Circuit & Waveforms

Vds + DUT Vds - L Isd + Vgs VDC - Ig
Vds +
DUT
Vds -
L
Isd
+
Vgs
VDC
-
Ig

Vdd

= - Idt Q rr Vgs t rr Isd I F dI/dt I RM Vds
= -
Idt
Q rr
Vgs
t rr
Isd
I F
dI/dt
I RM
Vds

Vdd