Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
T2
3
PMV250EPEA
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
Logic-level compatible
Very fast switching
Trench MOSFET technology
1 kV ESD protected
AEC-Q101 qualified
3. Applications
Relay driver
High-speed line driver
High-side load switch
Switching circuits
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 C
-40
VGS
gate-source voltage
-20
20
ID
drain current
-1.5
180
240
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2
drain 6 cm .
Scan or click this QR code to view the latest information for this product
PMV250EPEA
NXP Semiconductors
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
gate
source
drain
Simplified outline
Graphic symbol
TO-236AB (SOT23)
S
017aaa259
6. Ordering information
Table 3.
Ordering information
Type number
PMV250EPEA
Package
Name
Description
Version
TO-236AB
SOT23
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
PMV250EPEA
%JY
[1]
PMV250EPEA
20 June 2014
2 / 16
PMV250EPEA
NXP Semiconductors
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 C
-40
VGS
gate-source voltage
-20
20
ID
drain current
[1]
-1.5
[1]
-1
IDM
-6
EDS(AL)S
non-repetitive drain-source
avalanche energy
5.5
mJ
Tamb = 25 C
[2]
480
mW
[1]
890
mW
6250
mW
Ptot
avalanche (unclamped)
Tsp = 25 C
Tj
junction temperature
-55
150
Tamb
ambient temperature
-55
150
Tstg
storage temperature
-65
150
Source-drain diode
IS
source current
Tamb = 25 C
[1]
-0.9
HBM
[3]
1000
PMV250EPEA
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
[2]
[3]
drain 6 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Measured between all pins.
20 June 2014
3 / 16
PMV250EPEA
NXP Semiconductors
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
017aaa124
120
- 25
25
75
125
Tj (C)
0
- 75
175
Fig. 2.
- 25
25
75
125
Tj (C)
175
aaa-011993
-10
tp = 10 s
ID
(A)
tp = 100 s
-1
tp = 1 ms
DC; Tamb = 25 C; drain mounting pad 6 cm2
tp = 10 ms
DC; Tsp = 25 C
-10-1
tp = 100 ms
-10-2
-10-1
-1
-10
-102
VDS (V)
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
PMV250EPEA
20 June 2014
Min
Typ
Max
Unit
[1]
230
260
K/W
[2]
120
140
K/W
4 / 16
PMV250EPEA
NXP Semiconductors
Parameter
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
Conditions
Min
Typ
Max
Unit
15
20
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-011994
103
Zth(j-a)
(K/W)
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
duty cycle = 1
102
0.50
0.25
0.10
10
0.75
0.33
0.20
0.05
0.02
0.01
0
1
10-3
10-2
10-1
10
102
tp (s)
103
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-011995
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.50
0.75
0.25
0.33
0.20
0.10
0.05
10
0.02
0.01
0
1
10-3
10-2
10-1
10
102
tp (s)
103
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV250EPEA
20 June 2014
5 / 16
PMV250EPEA
NXP Semiconductors
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 A; VGS = 0 V; Tj = 25 C
-40
VGSth
gate-source threshold
voltage
-1
-1.7
-2.5
IDSS
-1
-20
VGS = 20 V; VDS = 0 V; Tj = 25 C
10
-10
180
240
300
400
220
300
IGSS
RDSon
drain-source on-state
resistance
gfs
forward
transconductance
VDS = -5 V; ID = -2 A; Tj = 25 C
4.5
RG
gate resistance
f = 1 MHz
19
4.7
nC
QGS
gate-source charge
Tj = 25 C
0.8
nC
QGD
gate-drain charge
0.7
nC
Ciss
input capacitance
293
450
pF
Coss
output capacitance
Tj = 25 C
35
pF
Crss
reverse transfer
capacitance
20
pF
td(on)
ns
tr
rise time
RG(ext) = 15 ; Tj = 25 C
ns
td(off)
26
39
ns
tf
fall time
14
ns
-0.8
-1.2
Dynamic characteristics
QG(tot)
Source-drain diode
VSD
source-drain voltage
PMV250EPEA
IS = -0.86 A; VGS = 0 V; Tj = 25 C
20 June 2014
6 / 16
PMV250EPEA
NXP Semiconductors
aaa-011996
-6
-10.0 V
ID
(A)
-3.5 V
-4.5 V
aaa-011997
-10-3
ID
(A)
min
-10-4
-4
typ
max
-3.0 V
-10-5
-2
VGS = -2.5 V
0
Fig. 6.
-1.0
-2.0
-3.0
VDS (V)
-10-6
-4.0
-1
-2
-3
Tj = 25 C
Tj = 25 C; VDS = -5 V
aaa-011998
1.0
aaa-011999
1.0
RDSon
()
RDSon
()
0.8
-2.5 V
0.8
-3.5 V
-3.0 V
0.6
0.6
0.4
0.4
Tj = 150 C
-4.5 V
0.2
0.2
VGS = -10 V
-2
-4
ID (A)
-6
Tj = 25 C
Fig. 8.
VGS (V)
-2
-4
-6
-8
-10
VGS (V)
ID = -1.3 A
PMV250EPEA
Tj = 25 C
Fig. 9.
20 June 2014
7 / 16
PMV250EPEA
NXP Semiconductors
aaa-012000
-6
aaa-012001
2.0
a
ID
(A)
1.5
-4
1.0
-2
Tj = 150 C
-1
-2
Tj = 25 C
-3
0.5
-4
VGS (V)
0
-60
-5
60
120
180
aaa-012003
103
Ciss
C
(pF)
VGS(th)
(V)
Tj (C)
aaa-012002
-3
max
Coss
102
-2
Crss
typ
-1
10
min
0
-60
60
120
Tj (C)
1
10-1
180
-10
VDS (V)
-102
f = 1 MHz; VGS = 0 V
PMV250EPEA
-1
20 June 2014
8 / 16
PMV250EPEA
NXP Semiconductors
aaa-012004
-10
VDS
VGS
(V)
ID
-8
VGS(pl)
-6
VGS(th)
VGS
-4
QGS1
QGS2
QGS
-2
QGD
QG(tot)
017aaa137
QG (nC)
aaa-012005
-4
IS
(A)
-3
Tj = 150 C
-2
Tj = 25 C
-1
-0.4
-0.8
VSD (V)
-1.2
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
t2
duty cycle =
t1
t2
t1
006aaa812
20 June 2014
9 / 16
PMV250EPEA
NXP Semiconductors
PMV250EPEA
20 June 2014
10 / 16
PMV250EPEA
NXP Semiconductors
SOT023
HE
Q
A
A1
1
2
e1
bp
Lp
detail X
2 mm
scale
mm
A1
1.1
0.1
0.9
bp
0.48 0.15
3.0
1.4
0.38 0.09
2.8
1.2
e1
1.9
0.95
HE
Lp
2.5
0.45 0.55
2.1
0.15 0.45
0.2
0.1
sot023_po
Outline
version
SOT023
References
IEC
JEDEC
JEITA
European
projection
Issue date
06-03-16
14-06-19
TO-236AB
20 June 2014
11 / 16
PMV250EPEA
NXP Semiconductors
13. Soldering
3.3
2.9
1.9
solder lands
solder resist
1.7
solder paste
occupied area
0.6
(3)
0.7
(3)
Dimensions in mm
0.5
(3)
0.6
(3)
1
sot023_fr
1.4
(2)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
sot023_fw
PMV250EPEA
20 June 2014
12 / 16
PMV250EPEA
NXP Semiconductors
Revision history
Data sheet ID
Release date
Change notice
Supersedes
PMV250EPEA v.3
20140620
PMV250EPEA v.2
20140612
PMV250EPEA v.1
PMV250EPEA v.1
20140312
PMV250EPEA
20 June 2014
13 / 16
PMV250EPEA
NXP Semiconductors
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Preliminary
[short] data
sheet
Qualification
Product
[short] data
sheet
Production
[1]
[2]
[3]
Definition
15.2 Definitions
Preview The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PMV250EPEA
20 June 2014
14 / 16
PMV250EPEA
NXP Semiconductors
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, ICODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight,
MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug,
TOPFET, TrenchMOS, TriMedia and UCODE are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo are trademarks of iBiquity Digital
Corporation.
PMV250EPEA
20 June 2014
15 / 16
PMV250EPEA
NXP Semiconductors
16. Contents
1
Applications ........................................................... 1
Marking ................................................................... 2
10
Characteristics ....................................................... 6
11
11.1
12
13
Soldering .............................................................. 12
14
15
15.1
15.2
15.3
15.4
PMV250EPEA
20 June 2014
16 / 16