AO4433

30V P-Channel MOSFET

General Description

Product Summary

The AO4433 uses advanced trench technology to

provide excellent RDS(ON) and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use
as a load switch or in PWM applications.

VDS (V) = -30V

ID = -11 A
(VGS = -20V)
RDS(ON) < 14m (VGS = -20V)
RDS(ON) < 18m (VGS = -10V)
RDS(ON) < 36m (VGS= -5V)
ESD Protected
100% UIS Tested
100% Rg Tested

SOIC-8
Top View
D
D
D

Bottom

D
G
G
S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage

VGS
TA=25C

Continuous Drain
Current AF
B

TA=25C
Power Dissipation
Avalanche Current

A
B

ID

-9.7
-50

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AF
Maximum Junction-to-Ambient A
C

Alpha & Omega Semiconductor, Ltd.

2.1

EAR
TJ, TSTG

Symbol
t 10s
Steady-State
Steady-State

IAR
B

Junction and Storage Temperature Range

Maximum Junction-to-Lead

25

IDM
PD

TA=70C

Repetitive avalanche energy 0.1mH

Units
V

-11

TA=70C

Pulsed Drain Current

Maximum
-30

RJA
RJL

-36

65

mJ

-55 to 150

Typ
28
54
21

Max
40
75
30

Units
C/W
C/W
C/W

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AO4433

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage

Conditions

Min

ID=-250A, VGS=0V

-30

IGSS

Gate-Body leakage current

VDS=0V, VGS=25V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=-250A

-1.5

On state drain current

VGS=-10V, VDS=-5V

-50

TJ=55C

-5
10

-3.5

11

14

15

19

VGS=-10V, ID=-10A

13.8

18

VGS=-5V, ID=-5A

25.8

36

TJ=125C

gFS

Forward Transconductance

VDS=-5V, ID=-11A

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

20

1760
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs

Gate Source Charge

-0.72

DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss

-2.45

VGS=-20V, ID=-11A
Static Drain-Source On-Resistance

Units

-1

Zero Gate Voltage Drain Current

RDS(ON)

Max

VDS=-30V, VGS=0V

IDSS

ID(ON)

Typ

VGS=-10V, VDS=-15V, ID=-11A

S
-1

-4.2

2200

360
3.2

pF
pF

255

357

pF

6.4

30

38

nC

nC

Qgd

Gate Drain Charge

nC

tD(on)

Turn-On DelayTime

11.5

ns

tr

Turn-On Rise Time

ns

tD(off)

Turn-Off DelayTime

35

ns

tf
trr

Body Diode Reverse Recovery Time

IF=-11A, dI/dt=100A/s

24

Qrr

Body Diode Reverse Recovery Charge IF=-11A, dI/dt=100A/s

16

VGS=-10V, VDS=-15V, RL=1.5,

RGEN=3

Turn-Off Fall Time

18.5

ns
30

ns
nC

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t 10s junction to ambient thermal resistance rating.
Rev9: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

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AO4433

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25

30
-10V

VDS=-5V

-5V
20
-6V

125C

20
-ID(A)

-ID (A)

15
-4.5V

10
10
25C

VGS=-4V
0

0
0

2.5

-VDS (Volts)
Fig 1: On-Region Characteristics

3.5

4.5

-VGS(Volts)
Figure 2: Transfer Characteristics

40

1.6
Normalized On-Resistance

VGS=-5V
30
RDS(ON) (m )

VGS=-10V

20

10
VGS=-20V
0

VGS=-10V
ID=-10A

1.4

VGS=-20V
ID=-11A

1.2
VGS=-5V
ID=-5A

0.8
0

10

15

20

25

-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature

1.0E+01

50
ID=-11A

1.0E+00

40
1.0E-01
-IS (A)

RDS(ON) (m )

125C
30
125C

1.0E-02
1.0E-03

20
1.0E-04
25C

10

1.0E-05

25C

1.0E-06

0
0

10

15

20

-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

1.0

1.2

-VSD (Volts)
Figure 6: Body-Diode Characteristics

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AO4433

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

2500

10
VDS=-15V
ID=-11A

Ciss
2000
Capacitance (pF)

-VGS (Volts)

1500

1000
Coss

0
0

10

15

20

25

30

35

-Qg (nC)
Figure 7: Gate-Charge Characteristics

10

15

20

25

30

-VDS (Volts)
Figure 8: Capacitance Characteristics

1000

100.0
10s

RDS(ON)
limited

TJ(Max)=150C
TA=25C

100s
1ms

10.0

100

10ms
Power (W)

-ID (Amps)

Crss

500

0.1s
1.0

1s

10

TJ(Max)=150C
TA=25C

10s
DC

0.1
0.1

10

100
1
0.00001

-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)

0.001

0.1

10

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)

Z JA Normalized Transient
Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=75C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD

0.1

Ton
Single Pulse
0.01
0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

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AO4433

G ate C harge Test C ircuit & W aveform

Vgs
Qg
-10V

VDC

VDC

Q gs

V ds

Q gd

DUT
V gs
Ig

C harge

Resistive Switching Test Circuit & Waveforms

RL
Vds

toff

ton

Vgs

DUT

Vgs

VDC

td(on)

td(off)

tr

tf

Vdd

Rg

Vgs

10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2

E AR= 1/2 LIAR

Vds
Vds

Id

Vgs

Vgs

VDC

Rg

BV
Vdd
Id
I

DUT
Vgs

Vgs

Diode Recovery Test Circuit & W aveforms

Q rr = - Idt

Vds +
DUT
Vgs

Vds Isd

Vgs

Alpha & Omega Semiconductor, Ltd.

-Isd

+ Vdd

-I F

t rr

dI/dt
-I RM

VDC

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