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Research paper
Applied Physics Section of the Environmental Science Department, University of Lleida, C/Pere Cabrera s/n, 25001 Lleida, Spain
King Abdulaziz Univ, Dept Mech Engn, POB 80204, Jeddah 21589, Saudi Arabia
c
Universit
e de Sherbrooke, D
ept g
enie m
ecanique, 2500 boul. Universit
e, QC J1K 2R1, Canada
b
h i g h l i g h t s
A design procedure of a cooling device in micrometrical scale has been developed.
Thermal resistance coefcient is near three times lower than at millimetre scale.
The stepwise varying width microchannel scheme provides high temperature uniformity.
The TIM layer causes a smoothing of the temperature distribution.
a r t i c l e i n f o
a b s t r a c t
Article history:
Received 23 July 2014
Accepted 3 December 2014
Available online 18 December 2014
Within the high heat extraction cooling technologies, stepwise varying width microchannel cooling
schemes have demonstrated their capacity to provide high temperature uniformities with low pressure
drops. In this study, a method to tailor the design of this kind of cooling device to the needs on an
application is developed. The resulting geometry is experimentally tested. A global thermal resistance
coefcient of 2.35$105 m2 K/W has been found, improving near three-fold the performance in a millimetrical scale for the same ow rate. The temperature prole of the wall temperature is quite uniform,
validating the design of the cooling device. A numerical model is developed and validated through
comparison with experimental results. It shows the smoothing effect of the Thermal Interface Material
(TIM) on the temperature prole and the improvement of both the thermal resistance coefcient and the
temperature uniformity with the increase of the ow velocity.
2014 Elsevier Ltd. All rights reserved.
Keywords:
Microchannel
Temperature uniformity
Cooling device
CFD modeling
1. Introduction
The operation of most semiconductor devices is sensitive to
temperature, so thermal management strategies are of increasing
importance as chips achieve higher power densities. As a consequence, efcient and innovative cooling systems must be implemented and become more relevant to the design of these
technologies. The main requirement is to provide a low thermal
resistance to maintain an acceptable operating temperature, as
needed for high power microelectronic components, for example.
31
32
Table 1
Set up design conditions.
Design specications
Design constraints
Parameter
Unit
Value
Tf,in
00
q
Q
Ts
S
N
H
Wf
K
W/cm2
mL/s
K
m2
e
mm
mm
293
50
8.73
313
5.00$104
5
300
100
dh 185; 416$h1:8797
dh
their height (H). The values of all these parameters are listed in
Table 1.
The energetic balance gives the local temperature of the uid
(Tf,i) along the ow path through the following equation.
Tf ;i Tf ;in
q $Si
r$CP $Q
(1)
hi
q
;
Ts Tf ;i
4$H$W
2$H W
(4)
This will allow the width of the channels en each section (Wi) to
be calculated once the microchannel height is dened:
Wi
00
(3)
2$H$dhi
4$H dhi
(5)
(2)
Fig. 1. Relation between hydraulic diameter and local heat transfer coefcient:
00
q 50 W/cm2, Q 8.73 mL/s, from Barrau et al [20].
33
Table 2
Results of the design procedure (for design conditions in Table 1).
Parameter
Tf,i
hi
dhi
Wi
Unit
K
W/m2 K
mm
mm
Values
N1 (i 1)
N2 (i 2)
N3 (i 3)
N4 (i 4)
N5 (i 5)
20
25,000
1003
1528
22.9
29,303
744
490
25.1
33,605
575
276
26.8
37,908
459
186
28.2
42,210
375
136
photoresist is applied on a 100 mm Si wafer by spin casting, prebaked, exposed to UV light through an optical mask with the
microchannel features, and developed. The exposed silicon is then
etched anisotropically with vertical walls using the Bosch process
for DRIE. The photoresist is then remove by O2 plasma and the chips
are separated by dicing.
4. Experimental results
To study the temperature distribution and thermal resistance of
the heat sink described previously, various tests were performed
under the conditions listed in Table 3. Temperature proles, ow
rates, heat rates were measured, which will rst be used to validate
the test apparatus.
4.1. Energy balance
Fig. 3. Microchannel
measurements.
Pf Pw
Pf r$Cp $Q $ Tf ;out Tf ;in
Re
(7)
sink
test
setup,
which
temperature
uniformity
(6)
heat
v$dh
y
(8)
As the section through which the uid ows before the rst row
of microchannels is an elongated section with a form factor x, the
hydraulic diameter is calculated according to the expression:
00
Fig. 2. Cooling device geometry (dimensions in mm) for q 50 W/cm2, Q 8.73 mL/s.
34
Fig. 4. Exploded view of the microchannel test module. The sequence of the ow path is represented by the numbered arrows.
2$Wcool
dh
1x
(9)
where Wcool is the width of the cooling device and the form factor x
is dened as:
Wcool
H
(10)
Q
00
q
Tf,in
35
Table 4
Temperature uniformity at copper layer height.
mL/s
W/cm2
C
Test 1
Test 2
Test 3
Symbol
Unit
Test 1
Test 2
Test 3
8.8
50
21.7
11.23
50
21.9
15.97
50
22.6
DTf,in-out
5.8
77.5
2.7
0.9
5.6
75.7
3.0
1.2
4.1
66.6
2.1
0.8
Ts
DTs
sT
C
C
C
C
(minemax)
T s Tfin
Rt
q00
Fig. 6. Comparison of the theoretical temperature difference between the inlet and
outlet of the cooling liquid with the experimental data.
(11)
(12)
Q
Tf,in
00
q
Rt
RCu RTIM
Rcool
mL/s
C
W/cm2
m2 K/W
m2 K/W
m2 K/W
Test 1
Test 2
Test 3
8.8
21.7
50
1.11$104
6.46$105
4.68$105
11.23
21.9
50
1.08$104
6.46$105
4.29$105
15.97
22.6
50
8.81$105
6.46$105
2.35$105
36
Fig. 10. Impact of the Reynolds number on the thermal resistance coefcient and
00
temperature standard deviation. Tf,in 20 C; q 50 W/cm2; ow rates (Q) from
8.80 mL/s to 3.00 mL/s.
37
The results show that the design procedure for future devices
can tailor the temperature distribution to the specic needs of the
cooled object, by modifying the microchannel distribution along
the ow path. The effect of the TIM layer between the cooling device and the cooled object should be kept into account at the design
stage.
Acknowledgements
This work is supported by the Project ENE2010-18357, funded by
the Spanish Ministry of Science and Innovation (MICINN).
Nomenclature
Fig. 12. Average temperature and temperature standard deviation vs. thermal resis00
tance. Conditions of Test 1 (Tf,in 21.7 C; q 50 W/cm2; Q 8.80 mL/s).
CP
dh
h
H
N
Pf
Pw
00
q
Q
Rcool
RCu
RTIM
Rt
Re
S
Tf
Ts
Ts
v
Wcool
W
Wf
Greek symbols
x
form factor ()
l
thermal conductivity (W/m K)
r
Density (kg/m3)
sT
Temperature standard deviation (K)
y
kinematic viscosity (m2/s)
Subscripts
i
position number of the sections ()
in
inlet ()
out
outlet ()
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