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Student ID Number:
Section: 01/02/03/04/05 A/B
Lecturer: Dr Jamaludin / Dr Azni Wati
/ Dr Fazrena Azlee
College of Engineering
Test 1
SEMESTER 1, ACADEMIC YEAR 2012/2013
Subject Code
Course Title
Date
Time Allowed
:
:
:
:
EEEB273
Electronics Analysis & Design II
29 June 2012
1.5 hours
Write your Name and Student ID number. Circle your section number.
Write all your answers using pen. DO NOT USE PENCIL except for the diagram.
ANSWER ALL QUESTIONS.
WRITE YOUR ANSWER ON THIS QUESTION PAPER.
For BJT, use VT = 26 mV where appropriate.
Use at least 4 significant numbers in all calculations.
GOOD LUCK!
Question No.
Marks
Total
Question 1
[40 marks]
a)
Explain clearly why are currents Ic1 and Ic2 in the basic two-transistor BJT current source
similar?
[5 marks]
b)
The values of
i)
ii)
[2 marks]
iii)
[2 marks]
Figure 1.1
Figure 1.2
[1.5]
[1.5]
[1]
[1]
c)
Figure 1.3 shows a pnp current source with transistor parameters = 50, VA = 50 V and
VEB(on) = 0.7 V.
i)
Find R1 such that IREF = 1.5 mA and find the value of IO.
ii)
What is the maximum value of RC2 such that Q2 remains in the forward-active
region? Assume VEC2(min) = VEB(on).
[3 marks]
iii)
[9 marks]
iv)
[3 marks]
v)
The circuit in Figure 1.3 is modified to include a resistor RE at the emitter of Q2.
Discuss what will happen to the percentage change in IO of the current source in this
situation.
[3 marks]
[7 marks]
ii)
iii)
IREF = I1 = 0.5 mA
From Figure 1.2,
= 2 IREF = 2 I1
I2
= 2 (0.5m) = 1 mA
I3
= 3 IREF = 3 I1
= 3 (0.5m) = 1.5 mA
[2]
[1]
[2]
[1]
IREF = I2 = 0.5 mA
Similar with above,
I1
= I2 /2 = (0.5m)/2 = 0.25 mA
I3
= 3 I1 = 3(0.25m) = 0.75 mA
[1]
[1]
IREF = I3 = 0.5 mA
Similar with above,
I1
= I3 /3 = (0.5m)/3 = 0.167 mA
I2
= 2 I1 = 2(0.167m) = 0.33 mA
[1]
[1]
Figure 1.3
I REF
V + VEB (on) V
=
= 1.5mA
R1
[2]
5 0.7 ( 5)
= 6.22k
[2]
1.5m
I REF
1.5m
IO =
=
= 1.44mA [3]
1 + 2 / 1 + 2 / 50
R1 =
Q1c(ii)
V + VEC (min)
R2 (max) =
IO
R2 (max) =
5 0.7
= 2.986k
1.44mA
[2]
[1 ]
Q1c(iii)
dIo = dVo/Ro
[2]
Ro = ro2
ro2 = VA/Io = 50/(1.44m) = 34.72k
[1]
[2]
[2]
[1]
[1]
Q1c(iv)
% change in Io
= 0.023 mA
= dIo/Io x 100%
= 0.023m/1.44m x 100% = 1.597%
[2]
[1]
Q1c(v)
The circuit becomes the Widlar current source.
[0.5]
Widlars output impedance Ro is much larger,
[0.5]
i.e. Ro= ro2[1 +gm(r //RE)].
[0.5]
Hence, lowering the dIo.
[0.5]
So, the % change in Io will decrease,
[0.5]
thus, improving the performance of the current source in terms of stability of Io.
[0.5]
Question 2
[30 marks]
Kn =
where
k n' W
2 L
Consider the basic MOSFET two-transistor current source in Figure 2. The circuit parameters
are V+ = 3 V, V- = -3 V, and IREF = 120 A; and the transistor parameters are VTN = 0.8 V and k'n =
80 A/V2.
a)
b)
For the basic two-transistor NMOS current source, find the relationship between IO and
IREF.
[5 marks]
c)
Find VGS1, VGS2, VDS1, and IO at = 0 for the following transistor aspect ratios:
d)
[1 mark]
i)
[8 marks]
ii)
[8 marks]
For (W/L)1 = 4.5, (W/L)2 = 2.25 and = 0.02 V-1, calculate the change in IO if VDS2
changes by 0.75 Volts.
[8 marks]
Q2(b)
1
1
(W / L )1 (1 + 1VDS1 )
K (V V ) (1 + 1VDS1 )
I REF
= n1 GS1 TN 1 2
=
IO
K n 2 (VGS 2 VTN 2 ) (1 + 2VDS 2 ) (W / L) 2 (1 + 2VDS 2 )
2
I O = I REF
(W / L )2 (1 + 2VDS 2 )
(W / L)1 (1 + 1VDS1 )
Figure 2
VGS 1 = VTN 1 +
VGS 1 = 0.8 +
I REF
K n1
120
80
( 4.5)
(W / L )2 (1 + 2VDS 2 )
(W / L)1 (1 + 1VDS 1 )
I O = I REF = 120 A
VGS 1 = 0.8 +
120
2
( 4.5)
I REF
K n1
80
1.5
Q2(c)(ii)
2
I REF = K n1 (VGS 1 VTN 1 )
VGS 1 = VTN 1 +
1.5
1.5
1.5
(W / L )2
(W / L )1
2.25
= 60 A
4.5
1.5
1.5
Q2(d)
k W
(VGS 2 VTN )2 = 80 ( 2.25)(0.8165) 2 = 60 A
2 L 2
2
1
1
1.5
rO 2 =
=
= 833k
I O (0.02)(60 )
1
RO = rO 2
dI O
(dVDS 2 )
1
=
dI O =
1
dVDS 2 RO
( RO )
(0.75)
dI O =
= 0.9003 A
1
(833k )
IO =
'
n
2.5
Question 3
a)
[30 marks]
ii)
By defining
v d = v BE1 v BE 2
Show that
iC 1 =
IQ
1+ e
vd / VT
and
iC 2 =
IQ
1 + e + vd / VT
[10 marks]
What happen when differential-mode input voltage (vd) is zero? Show how the
answer is obtained and explain your answer.
[4 marks]
Figure 3.1
b)
Figure 3.2 shows the small-signal equivalent circuit for basic BJT differential pair of
Figure 3.1, where vB1 and vB2 in the Figure 3.1 are represented by 2 input signals Vb1 and
Vb2 respectively, and their input signal resistors RB in the Figure 3.2.
Figure 3.2
With small-signal analysis, it can be found that one-sided output (Vo) taken at collector of
Q2 (i.e. Vc2) is given by:
Rc
Vo =
r + RB
Vb 2 1 +
r + RB
(1 + )Ro
2+
Vb1
r + RB
(1 + )Ro
If differential-mode input is Vd = vBE1 vBE2 = (Vb1 Ve) (Vb2 Ve) = Vb1 Vb2 and an
ideal constant-current source is used to bias the BJT differential pair, show that the
differential-mode gain is
Ad =
Vo
Rc
=
Vd
2 (r + R B )
[4 marks]
c)
For the differential amplifier shown in Figure 3.1, given that iE1 = 0.4 mA and RC = 12 k .
The transistor parameters are = 100 and VA = . Assume the output resistance looking
into the constant-current source is Ro = 25 k and the input signal resistors RB are zero.
The common-mode gain is given by:
Acm =
g m RC
2(1 + )Ro
1+
r + RB
[4 marks]
[5 marks]
[3 marks]
iC1 = I S e
v BE 1 / VT
, iC 2 = I S e vBE 2 /VT
iC1
I S e vBE 1 /VT
I S (e vBE 1 /VT ) / e vBE 1 /VT
1
=
=
=
v BE 1 / VT
v BE 2 / VT
v BE 1 / VT
v BE 2 / VT
v BE 1 / VT
( v BE 2 v BE 1 ) / VT
+e
+e
/e
1+ e
IQ I S e
IS e
iC 2
I S e vBE 2 /VT
I S ( e vBE 2 /VT ) / e vBE 2 /VT
1
=
=
=
v BE 1 / VT
v BE 2 / VT
v BE 1 / VT
v BE 2 / VT
v BE 2 / VT
( v BE 2 v BE 1 ) / VT
+e
+e
/e
1+ e
IQ I S e
IS e
v BE1 v BE 2 = v d
1+ e
Q3a(ii)
iC1 =
iC 2 =
Q
( v BE 2 v BE 1 ) / VT
1+ e
Q
( v BE 2 v BE 1 ) / VT
IQ
vd / VT
1+ e
IQ
1 + e + vd /VT
IQ
0 / VT
1+ e
IQ
1 + e 0 /VT
IQ
iC 2 =
iC1 =
1 + e vd /VT
IQ
=
1 + e + vd /VT
IQ
IQ
1+1 2
I
I
= Q = Q
1+1 2
1
1
1
1
Q3b
1
Vo =
RC
r + RB
Ro = Vo =
Ad =
r + RB
Vb1
(1 + )Ro
r + RB
2+
(1 + )Ro
Vb 2 1 +
RC Vb 2 Vb1
RC Vd
=
r + RB
2
r + RB
2
Vo
RC
=
Vd 2(r + RB )
1
Q3c(i)
RC
Ad =
2(r + RB )
RB = 0 Ad =
RC
2(r )
Either:
gm =
gm =
r =
Ad =
I CQ
VT
g m RC
2
i E 1 0. 4 m
=
= 15.385mA/V
VT 0.026
g m RC (15.385m )(12 k )
=
= 92.3
2
2
Ad =
Or:
VT
I CQ
RC
Ad =
2(r )
VT
i E1
(100)(0.026)
= 6.5k
0.4 m
(100)(12 k )
= 92.3
2(6.5k)
1, 0.5
1, 0.5
1, 0.5
Q3c(ii)
Acm =
g m RC
2(1 + )Ro
1+
r + RB
RB = 0 Acm =
gm =
r =
I CQ
VT
VT
I CQ
Acm =
=
=
g m RC
2(1 + )Ro
1+
r
i E1 0.4m
=
= 15.385mA/V
VT 0.026
VT
iE1
(100)(0.026)
= 6.5k
0.4m
g m RC
(15.385m )(12 k )
=
= 0.237
2(1 + )Ro
2(1 + 100 )( 25k )
1+
1+
6.5k
r
Q3c(iii)
CMRR =
1
Ad
92.3
=
= 389
Acm
0.237
1
MOSFET
iC = I S e v BE / VT ; npn
; N MOSFET
vDS (sat) = vGS VTN
iC = I S e v EB / VT ; pnp
iC = i E = i B
iD = K n [vGS VTN ]2
i E = i B + iC
k n' W
Kn =
2 L
; P MOSFET
+1
; Small signal
= g m r
r =
VT
gm =
I CQ
I CQ
VT
V
ro = A
I CQ
g m = 2 K n (VGSQ VTN ) = 2 K n I DQ
ro
1
I DQ