Lecture 2

VLSI Circuit Design
Lecture 2: MOSFET Bias Design

Dr. Ke Huang
COMPE 572
VLSI Circuit Design
Fall 2015
8/27/2015
COMPE 572 VLSI Circuit Design
Announcement
In my file, the following students are enrolled
but have not provided the proof of prerequisites
yet:
8/27/2015
Review
Introduction of VLSI
Review of bipolar junction transistor (BJT)
Review of metaloxidesemiconductor fieldeffect transistor (MOSFET)
8/27/2015

Simplified structure of the npn and pnp transistors
npn transistor
pnp transistor
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Characteristic for an npn transistor
characteristic
characteristic
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Review of metaloxidesemiconductor
field-effect transistor (MOSFET)
Physical structure of NMOS transistors
Physical structure of NMOS
Cross-section of NMOS
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Complementary MOS (CMOS)
Cross-section of a CMOS integrated circuit
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Characteristics of nMOS
D
G
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MOSFET Bias Design

Characteristics of nMOS a 3-dimensional view
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10
MOSFET Bias Design

Characteristics of nMOS a 3-dimensional view
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11
D
G
characteristic
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12
D
G
or
S
characteristic in saturation region
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13
Characteristics of pMOS
S
G
D
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14
Learning objectives
Biasing by fixing
Biasing using a drain-to-gate feedback resistor
Biasing using a constant-current source
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15
MOSFET Bias Design

MOSFET characteristics
D
G
S
We need to consider all the 3 regions (cutoff, triode, saturation) for

designing digital circuits, today we will focus on the saturation region
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MOSFET Bias Design

D
G
or
S
characteristic in saturation region
16
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17
MOSFET Bias Design

Why we need to bias transistors
Bias: State of the transistor when there is no signal
(current and voltages in all elements)
Bias is constant in time (may vary extremely slowly
compared to signal)
Purpose of the bias is to ensure that MOS is in saturation
at all times.
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MOSFET Bias Design

Biasing by fixing
Fixed voltage
value
Fixed voltage
value
GND
Subject to change
18
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19
MOSFET Bias Design

Biasing by fixing and connecting a resistance
in the source
The same applied to device 1 and device 2 will result in two values
1 and 2 , which will in turn result in very close values
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20
MOSFET Bias Design

in the source: practical implementations
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MOSFET Bias Design

in the source: an example
Design the circuit on the left to establish a DC
drain current = 0.5mA. The MOSFET is
specified to have = 1V and / =
1mA/V 2 . Use a power-supply = 15V and
we assume that , and take one-third
of supply voltage, respectively.
Determine the values of 1 and 2 .
Calculate the percentage change in the value
of obtained when the MOSFET is replaced
with another unit having the same but
= 1.5V.
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22
MOSFET Bias Design

takes one-third of supply voltage:

1
3
15V = 5V
15 10
=
=
= 10 k
0.5
5
= =
= 10 k
0.5
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MOSFET Bias Design

Determine
1
= (/)( )2
2
1
0.5 = 1 ( 1)2
2
= 2 V
= + = 5 + 2 = 7 V
We can set 1 = 8 M and 2 = 7 M
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MOSFET Bias Design

If = 1.5V this time
1
= 1 ( 1.5)2
2
= + = +
7 = 104 +
(1)
(2)
Combining (1) and (2), we have

= 0.455mA
Percentage change is
|0.4550.5|
0.5
= 9%
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Learning objectives
Biasing by fixing
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26
MOSFET Bias Design

Slope = 1/
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Learning objectives
Biasing by fixing
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MOSFET Bias Design

General scheme
Large input
resistance value
Constant
current source
28
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29
MOSFET Bias Design

Implementation of the constant-current source using a
current mirror
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MOSFET Bias Design

Analysis of current mirror
30
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MOSFET Bias Design

Analysis of current mirror
The output current value (or

2 ) can be easily controlled by
setting the W and L in the
transistor 2
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MOSFET Bias Design

Example of current mirror application
Using two transistors 1 and 2 having
equal lengths but widths related by 2 = 5,

1
design the circuit to obtain = 0.5 mA. Let

= 5 V, = 5 V, (/)1 =
0.8mA/V 2 , = 1V. Find the required
value for . What is the voltage at the gates
of 1 and 2 ? What is the lowest voltage
allowed at the drain of 2 while 2 remains
in the saturation region?
85k, -3.5V, -4.5V
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Summary
Biasing by fixing

Lecture 2

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VLSI Circuit Design

Lecture 2: MOSFET Bias Design

COMPE 572 VLSI Circuit Design

COMPE 572 VLSI Circuit Design

COMPE 572 VLSI Circuit Design

Review of bipolar junction transistor (BJT)

COMPE 572 VLSI Circuit Design

Review of bipolar junction transistor (BJT)

COMPE 572 VLSI Circuit Design

Physical structure of NMOS

COMPE 572 VLSI Circuit Design

Cross-section of a CMOS integrated circuit

COMPE 572 VLSI Circuit Design

COMPE 572 VLSI Circuit Design

MOSFET Bias Design

COMPE 572 VLSI Circuit Design

MOSFET Bias Design

COMPE 572 VLSI Circuit Design

COMPE 572 VLSI Circuit Design

characteristic in saturation region

COMPE 572 VLSI Circuit Design

COMPE 572 VLSI Circuit Design

COMPE 572 VLSI Circuit Design

MOSFET Bias Design

We need to consider all the 3 regions (cutoff, triode, saturation) for

COMPE 572 VLSI Circuit Design

MOSFET Bias Design

characteristic in saturation region

COMPE 572 VLSI Circuit Design

MOSFET Bias Design

COMPE 572 VLSI Circuit Design

MOSFET Bias Design

COMPE 572 VLSI Circuit Design

MOSFET Bias Design

COMPE 572 VLSI Circuit Design

MOSFET Bias Design

COMPE 572 VLSI Circuit Design

MOSFET Bias Design

COMPE 572 VLSI Circuit Design

MOSFET Bias Design

takes one-third of supply voltage:

COMPE 572 VLSI Circuit Design

MOSFET Bias Design

COMPE 572 VLSI Circuit Design

MOSFET Bias Design

Combining (1) and (2), we have

COMPE 572 VLSI Circuit Design

COMPE 572 VLSI Circuit Design

MOSFET Bias Design

COMPE 572 VLSI Circuit Design

COMPE 572 VLSI Circuit Design

MOSFET Bias Design

COMPE 572 VLSI Circuit Design

MOSFET Bias Design

COMPE 572 VLSI Circuit Design

MOSFET Bias Design

COMPE 572 VLSI Circuit Design

MOSFET Bias Design

The output current value (or

COMPE 572 VLSI Circuit Design

MOSFET Bias Design

equal lengths but widths related by 2 = 5,

design the circuit to obtain = 0.5 mA. Let