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The position (75% of regular work time) is available within the framework of a DFG funded project. It is planned to fabricate nanopillar-patterned semiconductor (GaAs) templates. The morphological and structural characterization will be based mainly on electron microscopy.
The position (75% of regular work time) is available within the framework of a DFG funded project. It is planned to fabricate nanopillar-patterned semiconductor (GaAs) templates. The morphological and structural characterization will be based mainly on electron microscopy.
The position (75% of regular work time) is available within the framework of a DFG funded project. It is planned to fabricate nanopillar-patterned semiconductor (GaAs) templates. The morphological and structural characterization will be based mainly on electron microscopy.
The Nanopatterning - Nanoanalysis - Photonic Materials group of the Physics
Department is offering a position at the next possible date for a
Research Assistant (Ph.D. student)
(Salary according to E 13 TV-L). This position (75% of regular work time) is available within the framework of a DFG (German Research Foundation) funded project on the Stability of misfit dislocations in axial-heteroepitaxial nanopillar structures and is initially limited to 3 years with the possibility of an extension. Your duties and responsibilities: The successful candidate is expected to contribute substantially to the experimental part of the above mentioned project. It is planned to fabricate nanopillar-patterned semiconductor (GaAs) templates by applying self-assembly methods such as nanosphere lithography combined with reactive ion etching. For the heteroepitaxy we will use molecular beam epitaxy in collaboration with a partner at the University of Paderborn. The morphological and structural characterization will be based mainly on electron microscopy (SEM and TEM/STEM), where state-of-the-art imaging as well as analytic TEM/STEM techniques are deployed for the determination of defect configurations and real structure of the heteroepitaxial nanopillars. Your profile: - Diploma/Master degree in physics or materials science - Practical experience in at least two of the fields: nanopatterning, electron microscopy, structural and morphological characterization of solids - Independent scientific working - Willingness to learn and to apply new methods - Collaborative way of working - Good English language skills Applications from women are strongly encouraged and will be given preference according to the North Rhine-Westphalian Equal Opportunities Act (LGG) in case of equal qualifications, skills, and achievements in the field. Similarly, applications from disabled persons are strongly encouraged. In accordance with the German social law (SGB IX) disabled applicants and otherwise impaired applicants considered as such having equal qualifications, skills, and achievements in the field are given priority over applicants who are not legally entitled to preferential consideration. Further information can be obtained from: - Dr. Thomas Riedl: thomas.riedl@uni-paderborn.de, phone +49 5251 60 2746 - Prof. Dr. Jrg Lindner: lindner@physik.upb.de, phone +49 5251 60 2748. The deadline for submission of applications is September 30th 2015. Applications should mention the reference number 2320 and include a letter of application, a curriculum vitae, copies of relevant academic certificates and letters of recommendation/ references. Applications are to be sent per email as a single PDF file in German or English to Dr. Thomas Riedl.
Prof. Dr. Jrg Lindner
Department Physik Fakultt fr Naturwissenschaften Universitt Paderborn Bewerbungen von Frauen sind ausdrcklich erwnscht und werden gem. LGG bei Warburger Str. 100 gleicher Eignung, Befhigung und fachlicher Leistung bevorzugt bercksichtigt, 33098 nicht Paderborn sofern in der Person eines Mitbewerbers liegende Grnde berwiegen. Teilzeitbeschftigung ist grundstzlich mglich. Ebenso ist die Bewerbung geeigneter Schwerbehinderter und Gleichgestellter im Sinne des Sozialgesetzbuches Neuntes Buch (SGB IX) erwnscht.
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