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Features
The FDS6982AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous
DC:DC power supplies that provide various peripheral
voltages for notebook computers and other battery
powered electronic devices. FDS6982AS contains two
unique 30V, N-channel, logic level, PowerTrench
MOSFETs designed to maximize power conversion
efficiency. The high-side switch (Q1) is designed with
specific emphasis on reducing switching losses while
the low-side switch (Q2) is optimized to reduce
conduction losses. Q2 also includes an integrated
Schottky diode using Fairchilds monolithic SyncFET
technology.
Applications
Q2:
8.6A, 30V
Q1:
6.3A, 30V
Notebook
D1
D1
D2
Q1
D2
3
2
SO-8
S2
G2
S1
G1
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current
PD
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Q2
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Parameter
VDSS
VGSS
Q2
Q1
Units
30
30
20
8.6
30
20
6.3
20
V
V
2
1.6
A
W
1
0.9
55 to +150
78
40
C/W
C/W
Thermal Characteristics
RJA
RJC
(Note 1a)
(Note 1)
Device
FDS6982AS
Reel Size
13
Tape width
12mm
Quantity
2500 units
FDS6982AS Rev B1
FDS6982AS
May 2008
Symbol
Test Conditions
Parameter
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
On Characteristics
VGS = 0 V,
ID = 1 mA
ID = 250 uA
VGS = 0 V,
ID = 1 mA, Referenced to 25C
ID = 250 A, Referenced to 25C
VDS = 24 V,
VGS = 0 V
VGS = 20 V,
VDS = 0 V
VDS = VGS,
VDS = VGS,
ID = 1 mA
ID = 250 A
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
30
30
Q2
Q1
1
1
V
28
24
mV/C
500
1
100
3
3
nA
(Note 2)
VGS(th)
VGS(th)
TJ
RDS(on)
Static Drain-Source
On-Resistance
Q2
3.1
Q1
4.3
VGS = 10 V, ID = 8.6 A
VGS = 10 V, ID = 8.6 A, TJ = 125C
VGS = 4.5 V, ID = 7.5 A
VGS = 10 V, ID = 6.3 A
VGS = 10 V, ID = 6.3 A, TJ = 125C
VGS = 4.5 V, ID = 5.6 A
VGS = 10 V,
VDS = 5 V
Q2
11
16
13
20
26
25
ID(on)
gFS
Forward Transconductance
1.4
1.9
VDS = 5 V,
VDS = 5 V,
ID = 8.6 A
ID = 6.3 A
VDS = 10 V,
f = 1.0 MHz
VGS = 0 V,
Q1
Q2
Q1
Q2
Q1
30
20
mV/C
13.5
20.0
16.5
28
33
35
32
19
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
1250
610
410
180
130
85
1.4
2.2
pF
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
9
10
6
7
27
24
11
3
12
12
13
14
19
15
10
5
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
RG
Gate Resistance
Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VGS = 15mV,
f = 1.0 MHz
pF
pF
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6
VDD = 15 V, ID = 1 A,
VGS = 4.5V, RGEN = 6
18
20
12
14
44
39
20
6
22
22
23
25
34
27
20
10
ns
ns
ns
ns
ns
ns
ns
ns
FDS6982AS Rev B1
FDS6982AS
Electrical Characteristics
Symbol
Parameter
Switching Characteristics
Qg(TOT)
Qg
Qgs
Qgd
(continued)
Test Conditions
Type Min
(Note 2)
Q2:
VDS = 15 V, ID = 11.5A
Q1:
VDS = 15 V, ID = 6.3A
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
GateSource Charge
GateDrain Charge
21
11
12
6
3.1
1.8
3.6
2.4
30
15
16
9
nC
nC
nC
nC
Trr
Qrr
Trr
Qrr
VSD
IF = 11.5 A,
diF/dt = 300 A/s
Q2
Q1
Q2
(Note 3)
IF = 6.3 A,
diF/dt = 100 A/s
(Note 2)
(Note 2)
(Note 2)
19
ns
12
nC
ns
Q1
20
Q2
Q2
Q1
9
0.5
0.6
0.8
(Note 3)
VGS = 0 V, IS = 3 A
VGS = 0 V, IS = 6 A
VGS = 0 V, IS = 1.3 A
3.0
1.3
nC
0.7
1.0
1.2
Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
78C/W when
mounted on a
2
0.5in pad of 2
oz copper
b)
125C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c)
135C/W when
mounted on a
minimum pad.
FDS6982AS Rev B1
FDS6982AS
Electrical Characteristics
FDS6982AS
Typical Characteristics: Q2
30
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.6
3.0V
VGS = 10V
3.5V
4.5V
20
10
2.5V
2.2
2
1.8
1.6
3.5V
4.0V
1.2
4.5V
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
6.0V
10V
10
20
ID, DRAIN CURRENT (A)
30
1.4
0.05
ID = 8.6A
VGS = 10V
ID = 4.3 A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.0V
1.4
0.8
1.2
0.8
0.6
-50
-25
0
25
50
75
o
TJ, JUNCTION TEMPERATURE ( C)
100
0.04
0.03
o
TA = 125 C
0.02
TA = 25 C
0.01
125
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
30
VGS = 0V
VDS = 5V
25
ID, DRAIN CURRENT (A)
VGS = 2.5V
2.4
20
15
TA = 125 C
-55oC
10
5
25oC
0
1
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
3.5
TA = 125 C
o
25 C
-55oC
0.1
0.01
0
0.2
0.4
0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.8
FDS6982AS Rev B1
FDS6982AS
Typical Characteristics: Q2
2000
1600
VDS = 10V
20V
6
15V
1200
Ciss
800
Coss
400
Crss
0
10
15
Qg, GATE CHARGE (nC)
20
25
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
100
P(pk), PEAK TRANSIENT POWER (W)
50
RDS(ON) LIMIT
100s
1ms
10ms
10
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
RJA = 135oC/W
0.1
TA = 25 C
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
RJA = 135C/W
TA = 25C
40
30
20
10
0
0.001
0.01
100
f = 1MHz
VGS = 0 V
ID = 8.6A
CAPACITANCE (pF)
10
0.01
0.1
1
t1, TIME (sec)
10
100
1000
1
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
SINGLE PULSE
0.001
0.0001
0.001
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1 / t2
0.01
0.1
10
100
1000
FDS6982AS Rev B1
FDS6982AS
Typical Characteristics Q1
VGS = 10V
4.0V
2.6
3.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
20
16
6.0V
12
4.5V
8
3.0V
1
VDS, DRAIN-SOURCE VOLTAGE (V)
1.8
3.5V
1.4
4.0V
4.5V
6.0V
1.6
10V
10
ID, DRAIN CURRENT (A)
15
20
ID = 6.3A
VGS = 10V
ID = 3.15 A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.2
0.6
1.4
1.2
0.8
0.08
0.06
o
TA = 125 C
0.04
0.02
TA = 25oC
0.6
-50
-25
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
150
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
20
VDS = 5V
VGS = 3.0V
15
10
TA = 125 C
o
-55 C
5
25oC
VGS = 0V
10
o
TA = 125 C
25oC
0.1
-55 C
0.01
0.001
0.0001
0
1
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
3.5
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
FDS6982AS Rev B1
FDS6982AS
Typical Characteristics Q1
800
f = 1MHz
VGS = 0 V
ID = 6.3A
8
CAPACITANCE (pF)
10
VDS = 10V
6
20V
15V
600
Ciss
400
Coss
200
2
Crss
0
0
0
6
Qg, GATE CHARGE (nC)
12
10
15
20
100
P(pk), PEAK TRANSIENT POWER (W)
50
RDS(ON) LIMIT
100s
10
1ms
10ms
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
o
RJA = 135 C/W
0.1
TA = 25oC
0.01
0.1
10
100
SINGLE PULSE
RJA = 135C/W
TA = 25C
40
30
20
10
0
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
1
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
0.001
0.0001
t1
0.01
SINGLE PULSE
0.001
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1 / t2
0.01
0.1
10
100
1000
FDS6982AS Rev B1
FDS6982AS
Current: 1.6A/DIV
TA = 125oC
0.01
0.001
TA = 100oC
0.0001
0.00001
TA = 25oC
0.000001
0
10
15
20
VDS, REVERSE VOLTAGE (V)
25
30
Current: 1.6A/DIV
Time: 10nS/DIV
FDS6982AS Rev B1
FDS6982AS
Typical Characteristics
VDS
tP
VGS
RGE
DUT
VGS
0V
tp
vary tP to obtain
required peak IAS
BVDSS
VDS
IAS
VDD
VDD
IAS
0.01
tAV
Drain Current
Same type as
50k
10V
10F
1F
+
VDD
VGS
QG(TOT)
10V
DUT
QGD
QGS
VGS
Ig(REF
Charge, (nC)
Figure 28. Gate Charge Test Circuit
VDS
VGS
RGEN
td(ON)
RL
VDS
+
VDD
DUT
VGSPulse Width 1s
10%
0V
90%
10%
90%
VGS
0V
tr
90%
tOFF
td(OFF
tf
)
50%
10%
50%
Pulse Width
FDS6982AS Rev B1
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
EcoSPARK
EfficentMax
EZSWITCH *
FPS
F-PFS
FRFET
Global Power ResourceSM
Green FPS
Green FPS e-Series
GTO
IntelliMAX
ISOPLANAR
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MillerDrive
MotionMax
Motion-SPM
OPTOLOGIC
OPTOPLANAR
Fairchild
Fairchild Semiconductor
FACT Quiet Series
FACT
FAST
FastvCore
FlashWriter *
PDP-SPM
Power-SPM
PowerTrench
Programmable Active Droop
QFET
QS
Quiet Series
RapidConfigure
Saving our world 1mW at a time
SmartMax
SMART START
SPM
STEALTH
SuperFET
SuperSOT-3
SuperSOT-6
SuperSOT-8
SuperMOS
TinyBoost
TinyBuck
TinyLogic
TINYOPTO
TinyPower
TinyPWM
TinyWire
SerDes
UHC
Ultra FRFET
UniFET
VCX
VisualMax
tm
* EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
2.
Product Status
Definition
Advance Information
Formative or In Design
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
Obsolete
Not In Production
FDS6982AS Rev.B1