AOL1413

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOL1413 uses advanced trench technology to

provide excellent RDS(ON) and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use
as a load switch or in PWM applications. The device is
ESD protected.
-RoHS Compliant
-Halogen and Antimony Free Green Device*

VDS (V) = -30V

ID = -38A (VGS = -10V)
RDS(ON) < 17m (VGS = -10V)
RDS(ON) < 36m (VGS = -5V)
ESD Protected!

Ultra SO-8TM Top View

D

Bottom tab
connected to
drain

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current B

TC=25C
ID
IDM

-7
38

PD

TC=100C

Junction and Storage Temperature Range

2.1

1.3

TJ, TSTG

-55 to 175

Symbol
t 10s
Steady-State
Steady-State

19

PDSM

TA=70C

Alpha & Omega Semiconductor, Ltd.

-70

IDSM

TA=70C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B

-9

TA=25C
Power Dissipation A

25
-27

TA=25C
TC=25C

Power Dissipation B

Units
V

-38

TC=100C

Pulsed Drain Current C

Continuous Drain
Current A

Maximum
-30

RJA
RJC

Typ
18
49
2.9

Max
25
60
4

Units
C/W
C/W
C/W

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AOL1413

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=-250uA, VGS=0V

-30
-1
TJ=55C

-5

Gate-Body leakage current

VDS=0V, VGS= 25V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=-250A

-1.5

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

-70

10

uA
V

13.5

17

18.5

24

VGS=-5V, ID=-20A

28

36

VDS=-5V, ID=20A

27

Static Drain-Source On-Resistance

gFS

Forward Transconductance

VSD

Diode Forward Voltage

IS=1A,VGS=0V
Maximum Body-Diode Continuous Current

TJ=125C

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge

-3.5

RDS(ON)

Output Capacitance

Units

-2.5

VGS=-10V, ID=-20A

Coss

Max

VDS=-30V, VGS=0V

IGSS

IS

Typ

-0.72

1760
VGS=0V, VDS=-15V, f=1MHz

S
-1

-38

2200

pF

360

pF

255
VGS=0V, VDS=0V, f=1MHz

VGS=-10V, VDS=-15V, ID=-20A

pF

6.4

30

38

nC

11

nC

Qgs

Gate Source Charge

nC

Qgd

Gate Drain Charge

nC

tD(on)

Turn-On DelayTime

11.5

ns

tr

Turn-On Rise Time

ns

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

IF=-20A, dI/dt=100A/s

24

Qrr

Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/s

16

VGS=-10V, VDS=-15V, RL=0.75,

RGEN=3

35

ns

18.5

ns
30

ns
nC

A. The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power
dissipation PDSM is based on t<10s R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C.
D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25C.
* This device is guaranteed green after date code 8P11 (June 1ST 2008)
Rev3:April, 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

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AOL1413

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

70

25

60

-10V

VDS=-5V

20

125C

15

40

ID(A)

ID(A)

50

-5V

30
20

10
-4.5V

25C

10

VGS=-4V

0
0

2
3
4
VDS (Volts)
Figure 1: On-Region Characteristics

40.0

2.5

3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics

1.8
Normalized On-Resistance

ID=-20A

RDS(ON) (m)

30.0
VGS=-5V
20.0

10.0
VGS=-10V

1.6

VGS=-10V

1.4

1.2

VGS=-5V

0.0
0

10

15

20

0.8

25

ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage

50

150

200

1.0E+02

50
ID=20A

1.0E+01

125C

40
1.0E+00

125C
30

IS (A)

RDS(ON) (m)

100

Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature

TC=100C
TA=25C

20

1.0E-01

25C

1.0E-02
1.0E-03

-55 to 175

10

25C

1.0E-04
1.0E-05

0
0

10

15

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

20

0.0

0.2

0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics

1.0

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

2500

10
VDS=-15V
ID=-20A

6
4
2

1500
1000

Coss

500

0
0

10

15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics

Crss

35

1000

10

15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics

30

100
TJ(Max)=175C
TC=25C

100
10

100s
1ms
DC

10ms

0.01
0.01

60

40

TJ(Max)=175C
TC=25C

0.1

80

10s

RDS(ON)
limited

Power (W)

ID (Amps)

Ciss

2000
Capacitance (pF)

VGS (Volts)

0.1

1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)

100

20
0.0001

0.001

0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)

ZJC Normalized Transient

Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZJC.RJC
RJC=4C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

TC=100C
TA=25C
PD

0.1

-55 to 175
Ton

Single Pulse
0.01
0.00001

0.0001

0.001

0.01

0.1

10

100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

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AOL1413

50

50

40

40
Current rating ID(A)

Power Dissipation (W)

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30
20
10

30
20
10

0
0

25

50

75

100

125

150

175

25

TCASE (C)
Figure 13: Power De-rating (Note B)

50

75

100

125

150

175

TCASE (C)
Figure 14: Current De-rating (Note B)

100000

Power (W)

10000
1000
100
10
1
0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)

ZJA Normalized Transient

Thermal Resistance

10
1

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=60C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1
0.01
PD
0.001

Ton
Single Pulse

0.0001
0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.

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AOL1413

G ate C harge Test C ircuit & W aveform

V gs

Qg

VDC

Q gs

V ds

Q gd

DUT

VDC

-10V

V gs
Ig

C harge

Resistive Switching Test Circuit & W aveforms

RL

Vds

t off

t on

Vgs
VDC

DUT

Vgs
Rg

td(on)

t d(off)

tr

tf

90%

Vdd

Vgs

10%

Vds

Unclam ped Inductive Switching (UIS) Test Circuit & W aveform s

2

E AR= 1/2 LIAR

Vds
Vds

Id
VDC

Vgs

Vgs

Rg

BVDSS
Vdd

Id

I AR

DUT
Vgs

Vgs

D iode R ecovery T est C ircuit & W aveform s

Q rr = - Idt

V ds +

DUT

V ds -

Isd

Vgs

V gs
Ig

Alpha & Omega Semiconductor, Ltd.

-Isd

+ Vdd

VDC

-I F

t rr

dI/dt
-I R M

Vdd

-V ds

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