P.S.

R ENGINEERING COLLEGE, SIVAKASI - 626 140

DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING
EE 37 - ELECTRONIC DEVICES AND CIRCUITS LABORATORY
LIST OF EXPERIMENTS
FIRST CYCLE
S. No.

EXPERIMENT NAME

Page No.

1.

Characteristics of PN Junction/ Diode

2.

Characteristics of Zener Diode/

15

3.

Characteristicsof CE Configuration/

19

4.

Characteristics of CB Configuration

25

5.

Characteristicsof
Transistor

31

6.

Characteristicsof
Transistor

Field/
U

ni

Effect
unction/

35

SECOND CYCLE
7.

Characteristics of S ilicon Controlled/

39

Rectifier (SCR)
8. UJT relaxation oscillator
9.

Characteristics Photo diode/

10. Half Wave and Full Wave Rectifiers

11.

Common Emitter amplifier

12. RC phase shift oscillator

45
51
55

61
67

Resistor values - the resistor colour code

Resistance is measured in ohms. The symbol for ohm is an omega ii.
1 iis quite small so resistor values are often given in k 2 and Ml.
1 ki = 1000 1

1 Mi = lOOOOOOii.

Resistor values are normally shown using colored bands.

Each colour represents a number as shown in the table.

Most resistors have 4 bands:

The first band gives the first digit.
The second band gives the second digit.

The Resistor

Colour

Number

Black

Brownl

Red

Orange

Yellow

Green

Blue

Violet

Grey

White

The third band indicates the number of zeros.

The fourth band is used to shows the tolerance (precision) of the resistor
This resistor has red (2), violet (7), yellow (4 zeros) and gold bands. So its value is
270000 ii= 270 ki. On circuit diagrams the i is usually omitted and the value is
written 270K.

Small value resistors (less than 10 ohm)

The standard colour code cannot show values of less than 10i. To show these small
values two special colours are used for the third band: gold which means x 0.1 and
silver which means x 0.01. The first and second bands represent the digits as normal.
For example:
red, violet, gold bands represent 27 x 0.1 = 2.7 i blue, green, diver bands represent 56
x 0.01 = 0.56 1
Tolerance of resistors (fourth band of colour code)
The tolerance of a resistor is shown by the fourth band of the colour code. Tolerance is
the precision of the resistor and it is given as a percentage. For example a 390i
resistor with a tolerance of 10% will have a value within 10% of 39011, between

390 - 39 = 351A and 390 + 39 = 429ii (39 is 10% of 390). A special colour code is
used for the fourth band tolerance: silver 10%, gold 5%, red 2%, brown 1%.
If no fourth band is shown the tolerance is 20%.

STUDY OF CATHODE RAY OSCILLOSCOPE (CRO)

The cathode ray oscilloscope is a type of most versatile electronic
measuring test equipment available. It provides a visual
presentation of any waveform applied to- the input terminal.
That means it allows signal voltages to- be viewed, as a twodimensional graph-in the given span of time.
The Y- axis of the graph represents voltage and- X- axis represents
time.
We can measure following parameters (quantities) using the CRO:
1. DC or AC voltage (peak voltage, frequency, pulse width,
2. Time (t=1/f),
3. Phase relationship (phase difference),
4. Waveform calculation (Rise time, fall time, on time, off-time
Distortion, delay time, etc.,)
We can also- measure non-electrical physical quantities like
pressure, strain, temperature, acceleration, etc., by converting
into-electrical quantities using a transducer.

Major blocks:
1. Cathode ray tube (CRT)
2. Vertical amplifier
3. Horizontal amplifier
4. Sweep generator
5. Trigger circuit
6. Associated power supply..
1. The cathode ray tube is the heart of the CRO providing
visual display of an input signal waveform The CRT is
enclosed in an evacuated glass envelope to permit the
electron beam- to traverse in the tube easily. The main
functional units of CRO are Electron gun assembly
Deflection plate unit & Screen..
2. Vertical Amplifier amplifies the signal at its input prior to
the signal being applied to the vertical deflection plates. It
is the main factor in determining the bandwidth and
sensitivity of an oscilloscope.. Vertical sensitivity is a
measure of how much the electron beam- will be deflected
for a specified input signal. On the front panel of the
oscilloscope, one can see a knob attached to a rotary switch

labeled volts/division. The rotary switch is electrically

connected to- the input attenuation network/. The setting of
the rotary switch indicates what amplitude signal is
required to- deflect the beam-vertically by one division/.

3. Horizontal amplifier amplifies- the signal at its- input prior

to- the signal being applied to- the horizontal deflection
plates. Under normal mode of operation/, the horizontal
amplifier will amplify the sweep generator input. Whenthe
CRO is being used in theX-Y mode, the horizontal amplifier
will amplify the signal applied to the horizontal input
terminal. Although the vertical amplifier mash be able to
faithfully reproduce low-amplitude and high frequency signal
with fast rise-time, the horizontal amplifier is only required
to provide a faithful reproduction of the sweep signal which
has a relatively high amplitude and slow rise time.
4. Sweep generator and Trigger circuit (These two units) form
the Signal Synchronization unit of the CRO. Sweep
Generator develops-a voltage at the horizontal deflection
plate that increase linearly with time.
5. Associated Power Supply: The input signal may come froman external source when- the trigger selector switch is set to
EXT or from- low amplitude AC voltage at line frequency.
When set for INT (internal triggering), the trigger circuit
receives its inputs- from the vertical amplifier.

Major Blocks in a Practical CRT:

A CRO consists- of a cathode ray tube (CRT) and additional control
knobs. Themain parts- of a CRT are:
V. Electron gun assembly.
ii. Deflection plate assembly.
iii.

Fluorescent screen.

Electron Gun Assembly: Cathodes, intensity grid, focus grid, and

accelerating' anode together known as electron gwn. The electron

gun generates a sharp beam of electrons, which/ are accelerated

to high/ velocity fired alongthe cathode ray tube. This focused
beam of electrons strike the fluorescent screen with sufficient
energy to cause aluminous spot (light) on the screen..
Deflection plate assembly: This part consists of two plates in which
one pair of plates isplacedhori%ontaUy andother of plates
isplaced vertically. The signal under test is applied to vertical
deflecting/ plates. The horizontal deflection plates are connected
to a built-in ramp generator, which moves the luminous spot
periodically in a horizontal/ direction from left to right over the
screen. Horizontal and vertical deflecting/plates control the path
of the electron beam. An electric field between the first pair of
plates deflects the electrons horizontally, and an electric field
between the second pair deflects them vertically. If no deflecting/
fields are present, the electrons travel in a straight line from the
hole in the accelerating/ anode to the center of the screen, where
they produce a bright spot. In general-purpose oscilloscopes
amplifier circuits are needed to increase the input signal/ to the
voltage levels required to operate the tube because the signals
measured using CRO are typically small. There are amplifier
sections for both vertical/ and horizontal/ deflection of the beam.
These two deflection plates give stationary appearance to the
waveform on the screen. CRO operates on voltage. Since the
deflection of the electron beam is directly proportional/ to the
deflecting voltage, the CRT may be used as a linear measuring
device.. The voltage being measured is applied to the vertical
plates through an iterative network, whose propagation time
corresponds to the velocity of electrons, thereby synchronizing the
voltage
appliedtotheverticalplatewiththevelocity
of
thebeam.
Synchronization of input signal: The sweep generator produces a
saw tooth waveform, which/ is used to synchronize the applied
voltage to obtain a stationary applied signal. This requires that
the time base be operated at a submultiples frequency of the
signal under measurement. If synchronization is not done, the
pattern is not stationary, but appears to- drift across the screen in
a random/ fashion.
Internal synchronisation: This trigger is obtained from- the time
base generator to-synchronize the signal.
External synchronization: An external trigger source can also- be
used to-synchronize the signal being-measured.
Auto Triggering- Mode: The time base used in this case in a selfoscillating- condition, t.e, it gives an output even in the absence of
any Y-input. The advantage of this mode is that the beam- is
visible on the screen under all conditions, including- the zeroinput. When the input exceeds a certain magnitude then the
internal free running-oscillator locks on to-the frequency.
Control Grid Regulates the number of electrons that reach- the

anode and hence the brightness of the spot on the screen. The
control grid, which has a negative potential, controls the electron
flow from- the cathode and thus controls the number of electron
directed to the screen.. A cathode containing an oxide coating is
heated indirectly by a filament resulting in the release of electrons
from- the cathode surface. Once the electron passes the control
grid, they are focused into a tight beam- and accelerated to a
higher velocity by focusing and accelerating anodes. The high
velocity and well-defined electron beam- then passed through two
sets of deflection plates. An evacuated glass envelope with a
phosphorescent screen which glows visibly when struck- by
electron beamOPERATION:

The four main parts of the oscilloscope CRT are designed to create
and direct an electron beam- to a screen to form- an image. The
oscilloscope links to a circuit that directly connects to the vertical
deflection plates while the horizontal plates have linearly
increasing-charge to form-a plot of the circuit voltage over time.
In an operating cycle, the heater gives electrons in the cathode
enough energy to escape.. The electrons are attracted to the
accelerating anode and pulled through a control grid that
regulatesthe number of electrons in thebeam/, a focusing-anode
that controls the width of the beam, and the accelerating anode
itself. The vertical and horizontal deflection/ plates create electric
fieldsthat bend thebeam of electrons. The electrons finally hit the
fluorescent screen, which absorbs the energy from the electron
beam and emits it in the form of light to display an image at the
end of the glass tube.
PRACTICE PROCEDURE:

1. Switch/ on the CKO. Turn the AC-GNV-VC to GND. Check/ if

a horizontal trace appears after the CKO warms up. Set the
trace centrally in position on the screen.
2. Become accustomed to the operation of the oscilloscope. Move
the focus, intensity, and position controls to see the effects
produced.
MEASUREMENT OF FREQUENCY:

3. Connect the signal generator output to one vertical input of the

CKO.

4. Set the function generator in sinusoidal mode and adjust the

amplitude ofthe signal sothat it just about fills the screen.
5. Set the signal generator dial at any particular frequency and
movethe dial until you/have only a few complete cycles across
the CKO face inthehorizontal direction.
6. Measure the period T of the signal. Todoso, measure (in
divisions & subdivisions) the horizontal distance between two
successive peaks and multiply this distance b button which/
isthe scale ofthe time axis. Record your data.
7. This gives the period T ofthe AC signal; its frequency is
then f = 1/T.
MEASUREMENT OF VOLTAGE:

8. Use the volts/div selector to convert vertical readings on the

oscilloscope into actual voltages.

In measuring the voltage/, always measure the value from the center ofthe
trace toitspeak/. This "peak voltage"' ishalf the peak- to-peak/ voltage,
which/ is the full height of the trace on the CKO screen.

1. CHARACTERISTICS OF PN JUNCTION DIODE

AIM:
To draw the voltage - current characteristics of PN junction/
diode/

under

forward

and

reverse

bias

condition/

and

to

determine cut in voltage/, reverse saturation current and forward

dynamic resistance.
APPARATUS REQUIRED:
S.NO.

NAME OF THE EQUIPMENT

Diode

TYPE

RANGE

IN 4001

Resistor
Voltmeter

MC

MC

(NO.S)

1
1 kQ

(0 - 2V)

One from/
each

(0 - 30V)
Ammeter

QUANTITY

(0 - 50mA) One from/

each
(0 - 500 ^A)
(0 - 30V)
1

Regulated Power Supply

Bread Board

Connecting wires

Required

FORMULA USED:
DC (or) Static Resistance (Rf) = Vf / If Q
AC (or) Dynamic Resistance,

Tf

= AVf /

A If Q Where,
AVf - Change in Voltage in forwardbias condition inVolty

Alf - Resulting Change in current in forward condition in

AmpsMODEL GRAPH:

V-I characteristics of PN junction

diode V Vs I

IffmA)
THEORY:
A PN junctton/ diode conducts only in one direction/. It is
an example of unilateral/ element. The V-I charactertsttcs of the

Forward Bias Condition

Breakd
'own
WltagejVBp)

Vf(V)

VrfV)

Reverse Voltage
in Volts
vwwwwvm *

Forward Voltage in volts

Cut in voltage,(Vy )

Ir(uA)

Reverse Bias Condition

diode are curve between voltage across the diode and current
through/ the diode. When external voltage is zero, circuit is
open and the potential barrier does not allow the current to
flow. Therefore, the circuit current is zero-. When P-type (Anode
is connected to/ +ve terminal and N type (cathode) is connected
to/ -ve terminal of the supply voltage, is known as forward bias
The potential barrier is reduced, when diode is in the forward
biased
barrier

condition/.

At

some

altogether

flowing/through/
diodeissaidtobe

the

forward voltage,

eliminated
diode

inON

and

state

and

potential

current

also/in
The

the

the

current

starts

circuit.

The

increases

with/increasing/ forward voltage.

When N-type (cathode) isconnectedto/+veterminalandPtype (Anode) is connected to/ the -ve terminal of the supply
voltage is known as reverse bias and the potential barrier
across the junction increases. Therefore, the junction resistance
becomes very high/ and a very small current (reverse saturation
current) flows in the circuit. The diode is said to be in Off state.
The reverse bias current is due to minority charge carriers.

An idealPN junction Diode is a two terminal polarity sensitive device that has
zero resistance (diode conducts) when it is forward biased and infinite
resistance (diode doesnt conduct) when it is reverse biased. Due to this
charactertstic, the diode finds number of applications as 1. Rectifiers in DC
power supply, 2. Switch in digital circuits, 3. Clamping, Clipping/ circuits
network/ used in TV Receiver, 4. Demodulation (detector) circuits

PROCEDURE:

1. Identify the anode and cathode/ terminals of an IN4001

diode (or equivalent silicon diode such- as- BY126) and-test
it using a multimeter. Set up the circuit on breadboard asshown- infigure-.
2. Wire the circuit as-shown-in figure-. By varying the input
voltage the ammeter and voltmeter readings- are noted
down- for forwardbias condition.
3. Wire the circuit as shown-in- figure. By varying the input
voltage the ammeter and voltmeter readings are noted down
for reverse bias- condition.
4. Plot all the readings curves on a- single graph- sheet.

RESULT:

1
5

Thus the forward and reverse V-I characteristics of a- diode were

obtained and the characteristics curves were plotted.CIRCUIT DIAGRAM:

Forward Bias Condition

TABULATION:
FORWARD BIAS
Sl.No
1.
2.
3.
4.
5.
6.

Vf (V)

Reverse Bias Condition

R EV ERSE BIAS
If (mA)

Sl.No
1.
2.
3.
4.
5.
6.

Vr (V)

Ir(mA)

7.

7.

2. CHARACTERISTICS OF ZENER DIODE

AIM:
To obtain/ the forward and reverse V-I characteristics of a
Zener diodeand to plot the characteristics.
APPARATUS REQUIRED:
S.NO.

NAME OF THE EQUIPMENT

TYPE

RANGE

QUANTITY
(NO.S)

Zener Diode

9.2 V

Resistor

1 kQ

Voltmeter

MC
MC

Ammeter

MC

Regulated Power Supply

Bread Board
Connecting wires

(0 - 2 V)
(0 - 10V)
(0 - 50mA)
(0 - 30V)

One from
each/
1
1
1
Required

THEORY:
A zener diode is heavily doped p-n junction/ diode, specially made to
operate in the break/ down region. A p-n junction diode normally does not
conduct when reverse biased. But if the reverse bias is increased, at a
particular voltage it starts conducting/ heavily. This voltage is called
Break down Voltage. High/ current through/ the diode can permanently
damage the device to avoid high/ current, In Zener diode the reverse
breakdown occurs at low voltages, sotheflow ofheavy current can be
avoided. Oncethediode starts conducting it maintains almost constant
voltage across the terminals whatever may be the current through/ it, V.e.,
it has very low dynamic resistance/. It is used in voltage regulatorsV-I

characteristics of Zener diode

V Vs I

Forward current in mA

JF(iQLA) j

'

Finvaidllua Condi tm
Y.ffdts!
Reverse Voltage in
Volts

V. [Volts]

VBD

Forward Voltage in Volts

Reverse Bias Ganditim L (mA)

Reverse current in JJA

VBD-Break Down Voltage

PROCEDURE:

1. Identify the anode and cathode terminals of the Zener diode.

2. Wire the circuit as shown in figure.. By varying' the input voltage in
steps and the ammeter and voltmeter readings are noted down for
forwardbias condition/.
3. Wire the circuit as shown in figure/. By varying the input voltage in
steps and the ammeter and voltmeter readings are noted down for
reverse bias condition.
4. Plot all the readings on a single graph sheet.

RESULT:
Thus the forward and reverse V-I characteristics of the Zener diode were obtained
and the characteristics curves were plotted

CIRCUIT DIAGRAM:

BULATION:
Input Characteristics

Sl.No.

CE1 (V) =

CE2 (V) =

IB (^A)

VBE (V)

IB (^A)

VBE (V)

1.
2.
3.
4.
5.

Output Characteristics
I

Sl.No.

B1

(^A) =

VCE (V)
1.
2.
3.
4.
5.

^A

IC (mA)

B2 (^A)^A

VCE (V)

VCE (V)

B3 (^A)^A

IC (mA)

VCE (V)

3. CHARACTERISTICS OF BIPOLAR JUNCTION TRANSISTOR (BJT) IN COMMAN EMITTER (CE)

CONFIGURATION
AIM:
To obtain the input and output (V - I) characteristics of a BJT in Common
Emitter Configuration and toplot the characteristics.
APPARATUS REQUIRED:

O.

NAME OF THE EQUIPMENT

1 Bipolar Junction

TYPE

RANGE

SL 100

QUANTITY
(NO.S)
1

Transistor
2 Resistor

1 kQ,

3 Voltmeter

MC

4 Ammeter

MC

5 Regulated Power Supply

33 kQ
(0 - 2 V)

One from each

(0 - 30V)
(0 - 500|aA)
One from each
(0 - 100mA)
(0 - 30V)
2

6 Bread Board
7 Connecting wires

FORMULA USED:
Input Impedance= AVEB / A IB Q
Output Admittance= A IC / AVCE mho
Current Gain= A IC / A IB

One from each

1
Required

Voltage Gain= AVCE / AVEBInput Characteristics:

Output

Characteristics:
VBE Vs IB

VCE Vs IC

*** Note VCE1 < VCE2 < VCE3 Similarly IB1 < IB2 < IB3

BJT PIN DIAGRAM

THEORY:
A transistor is a three terminal device. The terminals are
emitter, base, collector. In common emitter configuration, input
voltage is applied between base and emitter terminals and output
is taken across the collector and emitter terminals. Therefore the
emitter terminal is common to- both input and output. The input
characteristics resemble that of a- forward biased diode curve
This is expected since the Base-Emitter junction of the transistor
is forward biased. As compared to CB arrangement IB increases
less rapidly with- V BE. Therefore input resistance of CE circuit is
higher than- that of CB circuit. The output characteristics' are
drawn between Ic and VCE at constant IB. the collector current
varies with VCE unto few volts only. After this the collector
current becomes almost constant, and independent of V CE. The
value of V^ up to which- the collector current changes with V' is
known as Knee voltage. The transistor always operated in the
region

above

Knee

voltage,

Is

always

constant

and

is-

approximately equal to I.

PROCEDURE:

1. Identify the Emitter, Base and Collector terminals of the

transistor given and set up the circuit on breadboard as
shown in figure-.

Wire the circuit as shown in figure.. By keeping- the output

voltage (Collector Voltage) constant and varying- the
input voltage (Base Voltage) ammeter and voltmeter
readings are noted down.

2. Wire the circuit as shown in figure.

3. By keeping the input current (Base Current) constant and varying the output
voltage (Collector Voltage) ammeter and voltmeter readings are noted down
4. The above procedure shall be repeated for different output voltage and input
current and readings can be taken.
5. VI characteristics curves were drawn

RESULT:
Thus the input and output ( V-I ) characteristics of a transistor were obtained

and the characteristics curves were plotted.

RCUIT DIAGRAM:

BULATION:
Input Characteristics

Sl.No

CB

1(V) =

VCB2(V)

VBE (V)

IB (mA)

VBE (V)

IB (mA)

1.
2.
3.
4.
5.

Output Characteristics
I
Sl.No

E1 (mA) =

VCB (V)

mA

IC (mA)

E2 (mA) =

VCB (V)

mA

IC (mA)

E3 (mA)=

VCB (V)

mA

IC (mA)

1.
2.
3.
4.
5.

4. CHARACTERISTICS OF BIPOLAR JUNCTION TRANSISTOR (BJT) IN COMMAN BASE (CB)

CONFIGURATION
AIM:
To obtain the input and output (V-I) characteristics of a BJT in Common
Base Configuration and to plot the characteristics'.

APPARATUS REQUIRED:

O.

NAME OF THE EQUIPMENT

Bipolar

TYPE

RANGE

Junction SL 100

QUANTITY
(NO.S)

Transistor
Resistor
Voltmeter
Ammeter

1 kQ
MC
MC
MC

Regulated Power Supply

(0 - 2 V)
(0 - 30V)
(0
50mA)
(0 - 30V)

Bread Board
Connecting wires

FORMULA USED:
Input Impedance= AVEB / A IE Q
Output Admittance= A IC / AVCB mho
Current Gain= A IC / A IE

2
1
1
2
2
1
Required

Voltage Gain= AVCB / AVE

MODEL GRAPH
:

output

Input
characteristics:

characteristics:

VEB (V) Vs iB(mA)

Base
Current

VCB (V) VS Ic(mA)

Collector
Current m
mA. Ic (mJ

THEORY:

Bipolar
Junction/
Transistor
Emitter baseVoltage

111
Volts

VEB (V)

0 CoUectorBase

(BJT)

VCB (V)

voltage m Volts

is

three-terminal
semiconductor

BJT PIN DIAGRAM

device capable of

amplifying

three

are called the emitter, the base,

terminals

signal.

layers

-type and n--type semiconductor

material.

BJTs

consist

of

made

thin/

up

The

The

is

ac

and the collector.

of

device

an/

base

three

layer

(either P- or N-type) sandwiched between/ two- layers of the opposite type

material. Thus, BJTs are either NPN or PNP. They are somewhat like twointerconnected, back- to-- back/diodes, with two-diode junctions.
CB configuration/, the base is common- to both input (emitter) and output
(collector). for normal operation/, the E-B junction/ is forward biased and C-B
junction is reverse biased. The input characteristics are plots of I E versus Vm at
constant values of V . These characteristics will look like diode characteristics,
particularly if the collector is shorted to the emitter and the emitter-base junction
is

forward

biased.

The

output

characteristics,

often

called

the

collector

characteristics, are plots of Ic versus V at constant values

I E.

PROCEDURE:

1. Identify the Emitter, Base and Collector terminals of the transistor given and
set up the circuit on breadboard as shown in ffigure.

1. Wire the circuit as shown in figure/. By keeping the output voltage (Collector
Voltage) constant and varying the input voltage (Emitter Voltage) ammeter
and voltmeter readings are noted down.

2. Wire the circuit as shown in figure. By keeping the input

current (Emitter Current) constant and varying the output
voltage (Collector Voltage) ammeter and voltmeter readings
are noted down.
3. The above procedure shall be repeated for different output
voltage and readings can be taken.
4. VI characteristics'curves were drawn..

RESULT:
Thus the input and output ( V-I ) characteristics of a transistor in
CB configuration were obtained and the characteristics curves
were plotted.

TABULATION:
Transfer Characteristics
Sl.No

DS1(V) =____________(V)

VGS (V)

ID (mA)

(V)

DS2(V) =

VGS (V)

ID (mA)

1.
2.
3.
4.
5.

Drain Characteristics
Sl.No
1.
2.
3.
4.
5.

GS1(V) =

VDS (V)

ID (mA)

VDS (V)

GS2(V) =

ID (mA)

5. CHARACTERISTICS OF FIELD EFFECT TRANSISTOR

AIM:
To obtain the Drain and Transfer ( V-I ) characteristics' of
FET and toplot the characteristics'.

APPARATUS REQUIRED:
S.NO.

NAME OF THE EQUIPMENT

TYPE

1 FET

QUANTITY

RANGE

(NO.S)

BFW10/11

2 Resistor

1
1 kQ

3 Voltmeter

D.C

4 Ammeter

D.C

(0 - 5V)
(0 - 100V)
(0 - 50mA)

5 Regulated Power Supply

D.C

(0 - 30V)

2
One from
each,
1

6 Bread Board

2
1

7 Connecting wires

Required

THEORY:
A

FET

is'

three

terminal

device,,

having

the

characteristics' of high' input impedance and less' noise, the Gate

to

Sourcejunction

of

the

FET

s'ai rways'reverse,

biased.

In

response to small applied voltage from drain, to source, the ntype bar acts as sample resistor, and the drain current increases
linearly with, V vs. With increase in, I the ohmic voltage drop
between the source and the channel region reversebiases the

junction and the condactingposition of the

MODEL GRAPH:channel/ begins to remain constant. The V at this

Transfer
Characteristics

Drain
Characteristics

VGS(V) VS Io(mA)
Y

JFET PIN DIAGRAM

VDS(V) VS ID(mA) Y

& Source in Volts

& Source in Volts

instant is catted/ pinch of voltage. If the gate to- source

voltage (VGS) is applied/ in the direction to- provide additional
reverse bias, the pinch off voltage ill is decreased/.

PROCEDURE:
1. Identify the terminals of the FET given and set up the circuit
on breadboard asshown in figure/.
2. Wire the circuit as shown in figure/. By keeping-the Gate
Source voltage constant and varying- the Drain Source
voltage, I readings are noted dow n
3. Wire the circuit as shown in figure. By keeping-the Drain
Source voltage constant and varying- the Gate Source
voltage/, I readings are noted dow n
4. The

above

procedure

was

repeated

voltmeter readings were noted.

5. VI characteristics curves were drawn.

RESULT:

and

ammeter

and

Thus the Drain and Transfer (V-I) characteristics of the FET

were obtained and the characteristics curves were plotted.

TABULATION:

VRBI =
Sl.No
1.
2.
3.
4.
5.

VE (V)

BB2 =

IE (mA)

VE (V)

IE (mA)

6. CHARACTERISTICS OF UNI JUNCTION TRANSISTOR

AIM:
To obtain the V-I characteristics of a UJT and to- plot the
characteristics.
APPARATUS REQUIRED:
S.NO.

NAME OF THE EQUIPMENT

TYPE

1 Uni Junction Transistor

2N2646

2 Voltmeter

MC

3 Ammeter

MC

4 Regulated Power Supply

5 Bread Board
6 Connecting wires
THEORY:
A

'Uni-Junction

RANGE

QUANTITY
(NO.S)
1

(0 - 30V)
(0 - 50mA)
(0 - 30V)

2
1
1
1
Required

Transistor (UJT) is an electronic

semiconductor device that has only one junction/. The UJT Uni-Junction Transistor (UJT) has three terminals emitter (E) and
two bases (B1 andB2). The base is formed by lightly doped ntypebar of silicon. The emitter is of p-type and it is heavily
doped. The UJT, is a simple device that is essentially a- bar of N
type semiconductor material into which P type material has
been diffused somewhere along its length. The UJT is biased
with a positive voltage between the two bases. This causes a
potential drop along the length of the device. When the emitter
voltage is driven approximately one diode voltage above the
voltage at the point where the P diffusion (emitter) is, current
wdlbegin to flow from the emitter into the

base region. Because the base region is very lightly doped, the
additional current (actually charges in the base region) causes
(conductivity modulation) which reduces the resistance of the
portion of the base between the emitter junction and the B2
terminal. This reduction in resistance means that the emitter
junction is more forward biased, and so even more current is
injected. Overall, the effect is a negative resistance at the emitter
terminal. This is what makes the UJT useful, especially in simple
oscillator circuits.

PROCEDURE:
1. Identify the terminals of the transistor given and set up the
circuit on breadboard as shown in figure..
2. Wire the circuit as shown in figure.. By keeping-the Base Base voltage (V ) constant and varying- the Emitter Voltage
ammeter readings are noted down.
3. The above procedure shall be repeated for different V and
current readings can be taken.
4. VI characteristics curves were drawn..

RESULT:
Thus the V-I characteristics of the UJT were obtained and the
characteristics curves were plotted.

TABULATION:

Sl.No
1.
2.
3.
4.
5.
3.
7
.

Vf(V)

If(mA)

7. CHARACTERISTICS OF SILICON CONTROLLED RECTIFIER (SCR)

AIM:
To obtain the Voltage - Current characteristics of Silicon/

APPARATUS REQUIRED:
S.NO.

NAME OF THE EQUIPMENT

SCR
Resistor

TYPE

TYN6
16

Voltmeter

D.C

Ammeter

D.C

Regulated Power Supply

Bread Board
Connecting wires

THEORY:

QUANTITY

RANGE

(NO.S)

1
1 kQ

One from/
each/

10
(0
300V)
(0
100mA)
(0 - 30V)

1
2
1
1
Required

MODEL GRAPH:
A Silicon Controlled Rectifier ( S C R ) is 3 terminals
consisting of four semiconductor layers forming a P N P N

structure. It has three PN junctions namely J, J and J There

are three terminals called Anode, Cathode and the gate.
The SCR resembles the diode electrically, since it conducts
the current in one direction only, when forward biased.
However the SCR is different from/ diode because it has an
additional gate terminal. This gate is used to turn ON
the device.
V-I Characteristics of SCR
(mA)
(V Vs
)
Forward

mA

current
in mA

IH
O

Vr (V)
Reverse
voltage
in Volts

Ir 1mA)

V
H

V BO
Forward

Vf (V
)
oltag

volts

Reverse current
in mA

*** VBO - Break Over Voltage IHO - Holding Current IL - Latching current IG - Gate
curren

tWhen the anode is more positive with respect to- the

cathode, junctions J1&J3 are forward biased and the junctions'
J2 is reverse biased. Only a smalt leakage current flows through
the device. The device is said- to-be in- the forward blockingstate or off state or cutoff state.
When- the anode to cathode voltage
is- increased- tobreak over value,
the junction J2 breaks down and
SCR Schematic Symbol

ji

n
p
device starts
conducting(ON state) the

SCR Block Construction

anode current must be more than- the value known as latchingcurrent in order to maintain the device in the ON state-. Once
SCR starts conducting, it behaves like a conducting-diode and
gate has no- control over the device. The device can be turned
off only by bringing- the device in below a value known as
holding- current. The forward voltage drop across the device in
the ON state is around one volt. When the cathode voltage is
made positive with respect to the anode voltage junction J2 is
forward biased and the junction J1 and J3 are reversed biased.
The device wtd be in the reverse blocking state and only small
leakage current flows through the device.. The device canbe
turned on at forward voltageless than breakover voltage by
applying suitable gate current.TYN616

K- Cathode A Anode G - Gate

K A GThe SCR can be used in motor speed control, phase control,

light-

dimming

control,

heater

control,

battery

charger,

inverters', static switchers, rectifier power supplies and relay

control.
PROCEDURE:

1. Identify the terminals of the SCR given and set up the circuit
on breadboard asshown in figure..
2. Wire the circuit as shown in figure By keeping the Gate
voltage

constant

and

varying

the

Anode

and

Cathode

Voltage, ammeter readings are noted dow n..

3. The above procedure shall be repeated for different Gate
voltage and current readings can be taken.
4. VI characteristics curves were drawn.

RESULT:

Thus the V-I characteristics of a SCR were obtained and the

characteristics curves were plotted

UJT RELAXATION OSCILLATOR

TABULATION:

S.No.

Charging Time,
tc(ms)

DisCharging Time,
td(ms)

Amplitude,Vc(V)

8. UJT RELAXATION OSCILLATOR

AIM:

ToconstructtheUJT oscillator andobtainthe

characteristics. APPARATUS REQUIRED:
S.NO.

NAME OF THE EQUIPMENT

UJT
Resistor
Capacitor

TYPE

RANGE

2N2646

QUANTITY
(NO.S)
1

15 kQ
One from
220 kQ, 33Q
each
0.1 |aF
1

CRO

Bread Board

Connecting/wires

Required

FORMULA USED:

Chargingtime of capacitance,
T = RC l n [ (E - Eo)/E - EC]
E - Supply voltage
Eo- Initial capacitor voltage
Ec- Capacitance voltage
THEORY:

The Relaxation UJT oscillator consists of UJT and a

capacitor whichy is charged through a RE as the supply
voltage VBB is switched ON. The voltage across the capacitor
increases exponentially and when the capacitor voltage
reach the peak/ point voltage Vp, the UJT starts conducting/
and the capacitor voltage is discharged rapidly throughEm
andRl. After the peak/ point voltage of UJT is reached, it
provides negative resistance to the discharge path which is
useful in the working/ of the relaxation oscillator. As the
capacitor voltage reaches zero, the device then cuts off and
capacitor CE starts to

MODEL GRAPH:

Capacitor
Voltage in
Volts, Vc(V)

t
d
tc
td

Time in msec t(ms)

Charg mg time
Discharg ing time

UJT PIN DIAGRAM

charge again. This cycle is repeated continuously generating- a saw

tooth waveform/ across the capacitor.The inclusion of external
resistors R2 and R1 in series with B2 and B1 provides spike
waveforms. When the UJT fires, the sudden charge of current
through B1 causes drop across R1, which provides positive going
spikes Also, at the time of firing, fall of V EB1 causes I2 toincrease rapidly which generates negative going- spikes across
R2. By changing/the values of capacitance C E or resistance RE,
the frequency of the output waveform- can be changed as desired,
Since these values control the time constant R ECE of the capacitor
changing- circuit. The frequency of oscillation- can be obtained
by assuming- that the capacitor isinCtiddy uncharged.
f= 1/T = 2.3 RE CE log-10 [1/(1-U )]
Where, is intrinsic stand-off ratio

PROCEDURE:
1. Connections are given asper the circuit dia/gram/.
2. Positive biasing' voltage is given to the Emitter and Base-2
terminal.
3. The charging-and discharging- time of capacitor isobserved
from- the output waveform of CRO.
4. Positive output waveform of B1 andB2 are obtained.

RESULT:

Thus the UJT relaxation- oscillator circuit was constructed and

the output waveforms were noted. The corresponding- graphs are
drawn.

Forward Bias Condition

DIODE
AIM:

Reverse Bias ConditionCHARACTERISTICS OF PHOTO

To obtain the forward and reverse VI characteristics of a

APPARATUS REQUIRED:
S.NO.

NAME OF THE EQUIPMENT

TYPE

QUANTITY

RANGE

(NO.S)

Photo Diode

TABULATION:
Reverse Bias

Forward Bias
Sl.No

V (V)

I (mA)

Sl.No

Dark

1.
2.

1.

3.

2.

4.

3.

5.

4.

6.

5.

7.

V (V)

3.
7
.

I (^A)
Bright

Resistor

1 kn

Voltmeter

D.C

(0 - 2V)
(0 - 30 V) One from each

Ammeter

D.C

(0 - 50mA)
One from each
(0 - 250 |a A)

Regulated Power Supply

(0 - 30V)

Bread Board

1
1

Connecting wires

Required

FORMULA USED:
Variable resistance used TR = VD / ID Q
THEORY:
A photo Diode is a two terminal PN junction device which
operates in a reverse bias. It has small transparent window,
which allows light to strike the PN junction. A photo diode
d i f f e r s from a rectifier diode in a sense that its reverse current
increases with the light intensity at the PN junction. When there
is no light incident the reverse current is almost negligible and is
called the dark current. An increase in the amount of light
energy produces an

V Vs I

increase in the reverse current for a given value of reverse bias

voltage/. This device is a low noise, high/ speed and operates
over a wide temperature range. The application for this photo
diode includes remote control/ light curtains, data transmission
and measurement & control/.

PROCEDURE:
1. Identify the terminals of the Photo Diode given and set up
the circuit on breadboard asshown in figure.
2. Wire the circuit as shown in figure. By varying/ the input
voltage/, the ammeter and voltmeter readings are noted
dow n for forward bias condition.
3. Wire the circuit as shown in figure. By varying the input
voltage/ the ammeter and voltmeter readings are noted
down for reverse bias condition
4. VI characteristics curves were drawn.

RESULT:

Thus the forward and reverse V-I characteristics of a Photo D iode were obtained
and the characteristics curves were plotted.

Step-down Transformer
(12 - 0 - 12V)
P

TABULATION:

Input voltage (Vm):Time in mS:

Without Filter
With Filter (small value)
Rectifier

Half Wave

ifier
Full Wave

ifier

(V)

(V)
(mS)

uF

With Filter( larg e value)

T (mS)
Ripple

Charging

Discharging

Vm

Ripple

uF
T (mS)

Charging

Discharging

9.

HALF WAVE AND FULL WAVE RECTIFIER

AIM:
To construct half wave & full wave rectifier circuity
using diodes & observe the input & output wave formswith
& without filter.

APPARATUS REQUIRED:
S.NO.

NAME OF THE EQUIPMENT

1 Diode

TYPE
IN 4001

3 Capacitor

100 pF,33 pF
Step-down

QUANTITY
(NO.S)
4

1 kQ

2 Resistor

4 Transformer

RANGE

230 V /
(12 - 0 - 12) V

One fromeach
1

5 CRO withProbe

6 Bread Board

7 Connecting wires

THEORY:
HALF-WAVE RECTIFIER:

Required

Figure showy a basic half-wave diode rectifier circuit. During the positive
half-cycle of the input voltage, the diode is forward- biased for all
instantaneous voltages greater than the diode cut- in voltage Vy. Current
flowing through the diode during the positive half-cycle produces
approximately a half sine wave of voltages across theload resistor,
asshownin theFigure To-simplify our discussions, wewillassume that the
diode is ideal and that the

peak input voltage is always much larger than the VY of the diode.

Hence, we assume that the zero of the rectified voltage

coincides' with the zero of the input voltage. On the negative
half-cycle of the input voltage, the diode is reverse-biased.
Ignoring' the reverse leakage current of the diode, the load
current drops' to zero, resulting' in zero load voltage (output
voltage), as' shown in Figure.. Thus, the diode circuit has'
rectified the input ac voltage, converting' the ac voltage to a dc
voltage.

FULL-WAVE RECTIFIER:

Figure shows' a full-wave bridge rectifier with a load resistor RL and an input
sine wave derived from a transformer. Vuring'the positive half-cycle of the
input voltage, diodes' V2 and V3 are forward biased and diodes V1 and V4
are reverse biased. Therefore, terminal A is positive and terminal B is
negative, as shown in Figure.. Vuring'the negativehalf-cycle, diodesDl andV4
conduct, and again terminal A is positive and terminal B is negative. Thus, on
either half-cycle, the load voltage has the same polarity and the load current
is in the same direction, no matter which pair of diodes is conducting'. The
full-wave rectified signal is shown in Figure, with the Vo being' the output
voltage. Since the area under the curve of the full-wave rectified signal
istwicethat of the half-wave rectified signal, the average or dc value of the
full-wave rectified signal, Vdc, is twice that of the half-wave rectifier.

PROCEDURE:
1. Circuit connections were given as per the circuit diagram.
2. Input waveforms magnitude and frequency was measured
withthehelp of CKO.
3. Supply is switched ON and the output waveform was
obtained in theCKO.
4. Output

waveforms'

magnitude

and

time

period

was

measured.
5. Graphs were plotted for H a l f wave and pud wave rectifier
outputs'.

RESULT:

Thus the output of H a l f wave and pud wave rectifiers'

were obtained and the curves were plotted.

TABULATION:

Frequency,
S.No

f (Hz)

With CE
Vo (V)

Gain (dB)

11. COMMON EMITTER AMPLIFIER

AIM:
Toobtain the frequency response of Common Emitter
amplifier.

APPARATUS REQUIRED:
S.NO.

NAME OF THE EQUIPMENT

1 Bipolar

Junction

TYPE

RANGE

QUANTITY
(NO.S)

BC107

2 Transistor
Resistors

3 Capacitors

1
47 kQ,10 kQ,

One

2.2 kQ,820 Q , 680 Q

from

22 gF, 10 gF ,
15 gF

One
from

4 AFO with-probe

5 CRO with-probe

6 Regulated Power Supply

7 Bread Board
8 Connecting wires

FORMULA USED:
Gain- in dB = 20 log (Vo / Vi)

THEORY:

(0 - 30V)

1
1
Required

MODEL
GRAPH:
The CE
amplifier provides- high- gain &wide frequency response..
The emitter lead/ is- common to- both- input & output circuits-and
is grounded. The Emitter-Base circuit is forward

biased. The collector current is controlled by the Base current

rather than emitter current. The input signal is applied to base
terminal of the transistor and amplifier output is taken across
collector terminal. A very small change in base current produces
a muchlarger change in collector current. When +VE half-cycle
is fed to the input circuit, it opposes the forward bias of the
circuit

which

causes

the

collector

current

to

decrease,

it

decreases the voltage more -VE. Thus when input cycle varies
through a -VE half-cycle, increasesthe forward bias of the
circuit, which causes the collector current to increases thus the
output signal is common emitter amplifier is in out of phase with
the input signal. The input AC signal is applied across the baseemitter terminals and the output signal istaken across the
collector - emitter terminals. The emitter base junction of a
transistor is forward biased by the V supply. The collector base
junction is reverse biased by the V supply. Each capacitor acts
like a switch, The band width of the amplifier is calculated from/
the graph ussingthe expression,
3 dB Bandwidth, B W = f 2 - f 1
Where,
f1 islower cut-off frequency of CE amplifier, and f i t s upper
cut-off frequency of CE amplifier which is open to a direct
current but shorted to an alternating/ current. Because of this, a
blocking capacitor blocks the direct current. This action isolates
DC bias from/ an AC signal in the circuit. A common emitter
amplifier has the following important characteristics

 Its input resistance is in the range of 1 kO to2 kO, which is

consideredtobe moderately low.

 Its output resistance is about 50 kO and is

considered/ to- be moderately large/.
It produces very large power gain and is of the
order of 10000 or so
It produces phase reversal/ of the input signal.
The common emitter amplifier is the most widely used
amplifier of its large voltage and power gains In addition
to/ this, its input and output resistances are suitable for
most of the applications.

PROCEDURE:
1 Identify the Emitter, Base and Collector terminals of
the transistor given and set up the circuit on
breadboard as shown in figure/.
2 Wire the circuit as shown in figure
3 Using/ AFO the sinusoidal input with/ constant
magnitude is supplied
4 The frequency of the input increases gradually and the
output is obtained.
5 Using/aCRO the output waveform/is obtained.

RESULT:

Thus the Common Emitter amplifier circuit is constructed

and the amplified input signal is obtained and the graph/
was plotted.

TABULATION:

Sl.No

1.

Output in volts

Amplitude=

Time, T (ms)

Theoretical output frequency______________ Hz

Practical output frequency :-H

Frequency, f (Hz)

z
12. RC PHASE SHIFT OSCILLATOR
AIM:

To-design and set up an RC phase shift osci llator

usingBJT and to- observe the sinusoidal output
waveform/.
APPARATUS REQUIRED:NAME OF THE
S.NO.

TYPE

RANGE

QUANTITY

EQUIPMENT
1

Transistor

Resistors

Resistor

Capacitors

Capacitor

CRO

RPS

Bread Board

Connecting wires

(NO.S)

BC54
7

FORMULA USED:
Output frequency, fo

1
47kQ,

one from- each

10kQ,2.2kQ,
4.7kQ
3
1^F,22^F one from- each
0.01 ^F

(0 - 30V)

1
1
Required

1
2XRC
46

THEORY:
An oscillator is an- electronic circuit for
generating'an- AC signal voltage with a DC supply as
the only input requirement. The frequency of the
generated signal is decided by the circuit elements

MODEL GRAPH:

used. An oscillator requires an amplifier, a frequency

selective networkand a positive feedback from- the
output to-the input.

t (ms) Vs Vo (V)
Amplitude O/P Voltag

e
in volts,
Vo(V
)
Time in msec, t (ms)

BJT PIN DIAGRAM

The Barkhausen criterion/ for sustained oscillation is Ap = 1 where A

is the gain of the amplifier and p is the feedback factor (gain).The
unity gain/means signal is in/phase. ( If the signal is 180 0 out of
phase and gain will/be -1). RC-Phase shift Oscillator hasaCE
amplifier followed by three sections of RC phase shift feed-back
Networks. The output of the last stage is return to the input of the
amplifier. The values of R and C are chosen such that the phase
shift of each RC section is 60.Thus The RC ladder network/
produces a total phase shift of 180 between its input and output
voltage for the given frequency. Since CE Amplifier produces 180
phases shift. The total phase shift from the base of the transistor
around the circuit and back to the base will be exactly 360 or 0.
This satisfies the Barkhausen condition for sustaining/ oscillations
and total loop gain of this circuit is greater than or equal to 1, this
condition used togenerate the sinusoidal oscillations.

PROCEDURE:
1. Identify the pin details of BC107 Transistor (or equivalent
silicon Transistor such as BC108/547) and test it using a
millimeter. Set up the circuit on breadboard as shown in
figure.
2. A 12V Supply Voltage is given by using Regulated power
supply
3.
By
using
CRO
the output time period and voltage are noted.
4. Plotall the readings curves on a single graph sheet.

RESULT:
Thus the RC phase shift oscillator using BJT was obtained
and the output waveform/ was plotted.

VIVA QUESTIONS
1. Characteristics of PN Junction Diode
1. Define depletion/region of a diode?
2. What is meant/ by transition & space charge capacitance of
a diode?
3. IstheV-I relationship ofa diode Linear or Exponential?
4. Define cat-in voltage ofa diode and specify the values'
for Si and Ge diodes?
5. What are the applications ofa p-n diode?
6. Draw the ideal characteristics of P-N junction diode?
7. What is the diode equation?
8. What isPIV?
9. What is thebreak/ down voltage?
10. What is the effect of temperature on PN junction diodes?

2. Characteristics of Zener Diode

1. What type of temp? Coefficient does the%ener diodehave?
2. If the impurity concentration is increased, how the
depletion width effected?
3. Does the dynamic impendence of a %ener diodevary?
4. Explainbriefly about avalanche and %ener breakdowns?
5. Draw the %ener equivalent circuit?
6. Differentiatebetweenline regulation & load regulation?
7. In which region %ener diode canbe used asa regulator?
8. How the breakdown voltage of a particular diode can be
controlled?
9. What type of temperature coefficient does the Avalanche
breakdown has?
10. By what type of charge carriers the current flows in gener
and avalanche breakdown diodes?

3. Characteristics of CB Configuration
1.

What is the range of a for the transistor?

2.

Draw the input and output characteristics of the

transistor in CB configuration?

3. Identify various regions in output characteristics?

4. What isthe relation/between a and p?
5. What are the applications of CB configuration?
6. What are the input and output impedances of CB
configuration?
7. Define a(alpha)?
8. What isEARLY effect?
9. Draw diagram of CB configuration for PNP transistor?
10. What is the power gain of CB configuration?

4. Characteristics of CE Configuration
1. What is the range of (3 for the transistor?
2. What are the input and output impedances of CE
configuration?
3. Identify various regions in the output characteristics?
4. what is the relation between aand(
5. Define current gain in CE configuration?
6. Why CE configuration is preferred for amplification?
7. What is the phase relation between input and output?
8. Draw diagram of CE configuration for PNP transistor?
9. What is the power gainof CE configuration?
10. What are the applications of CE configuration?

5. Characteristics of Field Effect Transistor

1. What are the advantages of FET?
2. Different between FET andBJT?
3. Explain different regions of V-I characteristics of FET?
4. What are the applications of FET?

5. What are the types of FET?

6. Draw the symbol of FET.
7. What are the disadvantages of FET?
8. What are the parameters of FET?
9. FET is unipolar or bipolar?
10. FET is voltage controlled or current controlled?

6. Characteristics of Uni Junction Transistor

1. What is the symbolof UJT?
2. Draw the equivalent circuit of UJT?
3. What are the applications of UJT?
4. Formula for the intrinsic stand off ratio?
5. What does it indicates the direction of arrow in the'UJT?
6. What isthe difference between/FET andUJT?
7. IsUJT is used an oscillator? Why?
8. What is the Resistance between/ B and B 2 is called as?
9. What isits value of resistance between/ B and B 2?
10. Draw the characteristics of UJT?

7. Characteristics of Silicon Controlled Rectifier (SCR)

1. Whatthe symbol of SCR?
2. IN which state SCR turns of conducting state to blocking
state?
3. What are the applications of SCR?
4. What isholdingcurrent?
5. What are the important types thyristors?
6. How many numbers of junctions are involved in SCR?
7. What is the function of gate in SCR?
8. When/ gate is open, what happens when/ anode voltage is
increased?
9. What is the value of forward resistance offeredby SCR?
10. What is the condition/ for making from conducting state to
non conducing state?

8. UJT relaxation oscillator

1. What is meant by negative resistance region of UJT ?
2. What is "interbase resistance of UJT ?
3. What waveform is generated across the capacitor in UJT
relaxation/ Oscillator?
4. What isUJT?
5. Explain/ the working of UJT relaxation/oscillator
6. Explain/ the term peak point voltage (Vp) of aUJT

7. Explain the termvalley point voltage (Vv) of aUJT

8. What doesUJT stand for? Justify the nameUJT.
9. Difference between UJT andBJT
10. Draw the structure and symbol of UJT

9. Characteristics Photo diode

1. What is photo diode?
2. Define the term drift current
3. Define the term diffusion current
4. Explain the terms knee voltage and breakdown voltage
w.r.t. diodes
5. What isavalanchebreakdown inPN junction diode?
6. What is depletion region?
7. What are factors decides the magnitude of photo current?
8. Difference between PN junction (ordinary) diode and
photo diode:
9. What is Dark current?
10. Applications of Photodiode:

10. Half Wave and Full Wave Rectifiers

1. What is the peak inverse voltage ( P I V ) & write its value
for H a l f wave and Eud-wave rectifier?
2. What is the efficiency of half wave & full wave rectifier?
3. What is the rectifier?

4. What is the difference between the half wave rectifier and

full wave Rectifier?
5. What is the o/p frequency of Bridge Rectifier?
7. What is the function of the filters?
8. Define regulation of the full wave rectifier?
9. What is meant by ripple and define Ripple factor?

What are the applications of a rectifier? COMMON EMITTER

AMPLIFIER

1. What is phase difference between input and output

waveforms of CE amplifier?
2. What type of biasing is used in the given circuit?
3. If the given transistor is replaced by a p-n-p, can we
get output or not?
4. What is e f f e c t o f emitter-bypass capacitor on frequency
response?
5. What is the e f f e c t o f coupling capacitor?
6. What is region of the transistor sothat it is operated as
an amplifier?
7. How does transistor acts as an amplifier?
8. Draw the h--parameter model of CE amplifier?
9. What type of transistor configuration is used in
intermediate stages of a multistage amplifier?
10. What isEarly effect?
10. RC PHASE SHTFT OSCILLATOR

1. What are the conditions of oscillations?

2. Give the formula for frequency of oscillations?
3. What is the total phase shift produceby the RC ladder
network/?
4. Whether the oscillator is positive feedbackor negative
feedback?
5. What are the types of oscillators?
6. What is the gain of RC phase shift oscillator?
7. What is the difference between damped oscillations
undamped oscillations?
8. What are the applications of RC oscillations?
9. How many resistors and capacitors are used in RC
phase shift network
10. How the Barkhausen criterion is satisfied in RC
phaseshift oscillator