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Material: Silicon (Si), bulk

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Property
Value
Conditions
Reference
Coefficient of static friction
0.16
Wafer,used as a mover,min voltage to

remove the mover=1176 V, bottom of
the mover is glass plate
IEEE Micro Electro Mechanical

Systems Workshop,Jan-Feb 1991,
Nara,Japan, p.151
Coefficient of static friction
0.38

move the mover=1575 V, bottom of the
mover is Silicon substrate,thickness=0.5
mm.

Nara,Japan, p.151
Coordination number
Silicon<111>,crystalline,undoped
polished, obtained by SAW
technique,using the ns Nd:YAG at 355
nm for launching and the probe beam
deflection arrangement for detecting
SAW pulses.
Applied Surface
Science,106(1996), p.433
Density
2330 kg/m^3
Solid Density
CRC Materials Science and

Engineering Handbook, p.46
Density
2330 kg/m^3
SAW pulses.
Applied Surface
Science,106(1996), p.433
Elastic recovery during

unloading
0.56
Si<001> substrate,uncoated,using
nanoindentation method and load
displacement curves for calculation.
Thin Solid Films,246(1994), p.108
Friction coefficient
0.05
Undoped silicon,at the begining of

scratching & from an abrupt increase in
friction during scratching, width of
scratch(1.25um) at about 17-20 mN
normal load(measured from SEM
images),critical load=10 mN.
J.Mater.Res,Vol.12,No.1,Jan 1997,
p.59
0.25
P+type silicon<100>,at the begining of

scratch(1.75 um) at about 17-20 mN
p.59
0.45 .. 0.6
P+type silicon<100> ,at the end of

p.59
0.45
Undoped silicon ,at the end of

p.59
0.03
Single crystal,orientation <111>,scan

size=500X500 nm2,using nanotribology
studies(AFM/FFM).

Systems Workshop,SanDiego,
California, Feb 1996, p.97
Friction coefficient,final
0.11
Single crystal
silicon<100>,undoped,sliding against a
spherical diamond tip (radius=20um)at
10 mN normal load, 7.0 mmstroke
length,0.1 Hz frequency,and 1.0
mm/sec average linear speed for a
sliding distance of 4m under an ambient
temperature of about 22+-1 C and a
relative humidity of about 45+-5% RH.
p.60
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Property
Value
Conditions
Reference
0.11
Single crystal silicon<100>,p+type

,sliding against a spherical diamond tip
(radius=20um)at 10 mN normal load,
7.0 mmstroke length,0.1 Hz
frequency,and 1.0 mm/sec average
linear speed for a sliding distance of 4m
under an ambient temperature of about
22+-1 C and a relative humidity of about
45+-5% RH.
p.60
0.65
Single crystal silicon<100>,p+type,

sliding against a single-crystal sapphire
ball(diameter=3mm)7.0 mm stroke
p.60
0.33
Single crystal silicon<100>,undoped,

sliding against a single-crystal sapphire
ball(diameter=3mm)7.0 mm stroke
p.60
Friction coefficient,initial
0.11
Single crystal
silicon<100>,p+type,sliding against a
spherical diamond tip (tip radius, 20 um)
at 10 mN normal load, 7.0 mm stroke
length, 0.1 Hz frequency,and 1.0
sliding distance of 4 m under an
ambient temperature of 22 +-1 deg C
and a relative humidity of about 45
+-5% RH.
p.60
0.09
Single crystal
spherical diamond tip (tip
radius,20um)at 10 mN normal load, 7.0
mm stroke length, 0.1 Hz frequency,and
1.0 mm/sec average linear speed for a
sliding distance of 4 m under an
ambient temperature of 22 +-1 deg C
and a relative humidity of about 45
+-5% RH.
p.60
0.37
Single crystal
single-crystal sapphire
ball(diameter,3mm) at 10 mN normal
load,7.0 mmstroke length,0.1 Hz
45+-5% RH.
p.60
0.69
Single crystal
silicon<100>,p+type,sliding against a
single-crystal sapphire
ball(diameter,3mm) at 10 mN normal
load,7.0 mmstroke length,0.1 Hz
45+-5% RH.
p.60
Friction coefficient,micro
0.04
Single crystal<110>,scan size=500X500

nm2,using nanotribology
studies(AFM/FFM).

California,Feb 1996, p.97
0.03

studies(AFM/FFM).

0.02
C+ implanted Si<111>

Property
Value
Conditions
Reference
Hardness
13 GPa
Silicon<100>,single crystal,undoped
obtained by nano indentation at a load
of 0.2mN with indentation depth at peak
load 24nm.
J.mater.Res,Vol.12,No.1,Jan1997,
p.59
Hardness
11.9 GPa
Silicon<100>,single
crystal,undoped,values obtained by
nano indentation at a load of 15 mN
with indentation depth at peak load 267
nm.
J.mater.Res,Vol. 12,No.1,Jan1997,
p.59
Hardness
5.1 GPa
Silicon<100>,single
crystal,P+type(boron doped),values
of 0.2 mN with indentation depth at
peak load 44 nm.
p.59
Hardness
8.7 GPa
Silicon<100>,single
of 15 mN with indentation depth at peak
load 318 nm.
p.59
Hardness(at 100uN)
11.7 GPa

studies(AFM/FFM).

Hardness,load-off
36.3 GPa
Hardness,load-on
7.1 GPa
Hardness,nanoindentation(at
100uN)
18.6 GPa

Hydrogen content
SAW pulses.
Applied Surface
Science,106(1996), p.433
Poisson's Ratio
0.22
Silicon substrate,isotropic & linearly

thermoelastic.
Mechanics of Materials,23(1996),
p.314
Poisson's Ratio
0.27
SAW pulses.
Applied Surface
Science,106(1996), p.433
Poisson's Ratio
0.278
Material property used in the finite

element computations of ultra
microhardness indentation of thin
films,both coating and substrate are
assumed to be homogenous and
elastic/plastic.
Thin solid films 290-291(1996),

p.363
Roughness (RMS)
0.08 nm
Undoped,single crystal,measured using

AFM at a scan size of 1 um x 1 um.
J. Mater. Res. Vol. 12 No. 1, Jan

1997, p.60
Roughness(Rms)
0.23 nm
Single crystal
silicon<100>,p+type(boron doped),
value measured using AFM at a scan
size of 1 um x 1 um.
J. Mater. Res., Vol. 12 No. 1, Jan

1997, p.60
Roughness(Rms)
0.11

studies(AFM/FFM).

Roughness(Rms)
0.09

studies(AFM/FFM).

Roughness(Rms)
0.12

studies(AFM/FFM).

Roughness(Rms)
0.33

Scratch depth(at 40uN)
20 nm

studies(AFM/FFM).

Property
Value
Conditions
Reference
Scratch depth,micro(at
40uN)
20 nm

studies(AFM/FFM).

40uN)
25 nm

studies(AFM/FFM).

40uN)
20 nm

Specific heat
702.24 J/kg/K
At Temp=25 C.
CRC Materials Science and

Engineering Handbook, p.260
Static frictional force(max)
0.000562 N

remove the mover=1176 V, bottom of
the mover is glass plate

Nara,Japan, p.151
Static frictional force(max)
0.001009 N

move the mover=1575 V, bottom of the
mover is Silicon substrate,thickness=0.5
mm.

Nara,Japan, p.151
Wear depth(at 40uN)
27 nm

studies(AFM/FFM).

Wear depth,micro(at 40uN)
23 nm

Young's Modulus
165 GPa
Silicon substrate,isotropic & linearly

thermoelastic.
Mechanics of Materials,23(1996),
p.314
Young's Modulus
179 GPa
Silicon<100>,single crystal,undoped
of 0.2mN with indentation depth at peak
load 24nm.
p.59
Young's Modulus
202 GPa
Silicon<100>,single
crystal,undoped,values obtained by
nano indentation at a load of 15 mN
with indentation depth at peak load 267
nm.
J.mater.Res,Vol. 12,No.1,Jan1997,
p.59
Young's Modulus
62 GPa
Silicon<100>,single
of 0.2 mN with indentation depth at
peak load 44 nm.
p.59
Young's Modulus
125 GPa
Silicon<100>,single
of 15 mN with indentation depth at peak
load 318 nm.
p.59
Young's Modulus
163 ..
188 GPa
Wafer,Si<111>,value obtained by using

micro-indentation test.
Young's Modulus
160 GPa
SAW pulses.
Applied Surface
Science,106(1996), p.433
Young's Modulus
127 GPa
Material property used in the finite

element computations of ultra
microhardness indentation of thin
films,both coating and substrate are
assumed to be homogeneous and
elastic/plastic.
Thin solid films 290-291(1996),

p.363
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A MEMS Clearinghouse and information portal

for the MEMS and Nanotechnology community

Material: Silicon (Si), bulk

Coefficient of static friction

Wafer,used as a mover,min voltage to

IEEE Micro Electro Mechanical

Coefficient of static friction

Wafer,used as a mover,min voltage to

IEEE Micro Electro Mechanical

CRC Materials Science and

Elastic recovery during

Thin Solid Films,246(1994), p.108

Undoped silicon,at the begining of

P+type silicon<100>,at the begining of

P+type silicon<100> ,at the end of

Undoped silicon ,at the end of

Single crystal,orientation <111>,scan

IEEE Micro Electro Mechanical

Single crystal silicon<100>,p+type

Single crystal silicon<100>,p+type,

Single crystal silicon<100>,undoped,

Single crystal<110>,scan size=500X500

IEEE Micro Electro Mechanical

Single crystal<100>,scan size=500X500

IEEE Micro Electro Mechanical

IEEE Micro Electro Mechanical

Single crystal,orientation <111>,scan

IEEE Micro Electro Mechanical

Thin Solid Films,246(1994), p.108

Thin Solid Films,246(1994), p.108

IEEE Micro Electro Mechanical

Silicon substrate,isotropic & linearly

Material property used in the finite

Thin solid films 290-291(1996),

Undoped,single crystal,measured using

J. Mater. Res. Vol. 12 No. 1, Jan

J. Mater. Res., Vol. 12 No. 1, Jan

Single crystal,orientation <111>,scan

IEEE Micro Electro Mechanical

Single crystal<110>,scan size=500X500

IEEE Micro Electro Mechanical

Single crystal<100>,scan size=500X500

IEEE Micro Electro Mechanical

IEEE Micro Electro Mechanical

Scratch depth(at 40uN)

Single crystal,orientation <111>,scan

IEEE Micro Electro Mechanical

Single crystal<110>,scan size=500X500

IEEE Micro Electro Mechanical

Single crystal<100>,scan size=500X500

IEEE Micro Electro Mechanical

IEEE Micro Electro Mechanical

CRC Materials Science and

Static frictional force(max)

Wafer,used as a mover,min voltage to

IEEE Micro Electro Mechanical

Static frictional force(max)

Wafer,used as a mover,min voltage to

IEEE Micro Electro Mechanical

Wear depth(at 40uN)

Single crystal,orientation <111>,scan

IEEE Micro Electro Mechanical

Wear depth,micro(at 40uN)

IEEE Micro Electro Mechanical