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STP46NF30, STW46NF30
N-channel 300 V, 0.063 typ, 42 A, STripFET II Power MOSFET
in D2PAK, TO-220 and TO-247 packages
Datasheet production data
Features
TAB
TAB
Type
VDSS
RDS(on)
max
ID
Pw
STB46NF30
300 V
< 0.075
42 A
300 W
STP46NF30
300 V
< 0.075
42 A
300 W
STW46NF30
300 V
< 0.075
42 A
300 W
3
1
3
1
DPAK
TO-220
TO-247
Applications
Switching applications
Automotive
Figure 1.
Description
These Power MOSFETs have been developed
using STMicroelectronics unique STripFET
process, which is specifically designed to
minimize input capacitance and gate charge. This
renders the devices suitable for use as primary
switch in advanced high-efficiency isolated DCDC converters for telecom and computer
applications, and applications with low gate
charge driving requirements.
G(1)
S(3)
Table 1.
AM09016v1
Device summary
Order code
Marking
Package
Packaging
STB46NF30
46NF30
DPAK
STP46NF30
46NF30
TO-220
Tube
STW46NF30
46NF30
To-247
Tube
September 2012
This is information on a product in full production.
1/19
www.st.com
19
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
............................. 6
Test circuits
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
.............................................. 9
Electrical ratings
Electrical ratings
Table 2.
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
300
VGS
Gate-source voltage
20
ID
42
ID
27
168
Total dissipation at TC = 25 C
300
Derating factor
W/C
10
V/ns
-55 to 175
175
IDM
(1)
Ptot
dv/dt (2)
Tstg
Tj
Storage temperature
Max. operating junction temperature
Table 3.
Thermal data
Value
Symbol
Parameter
Rthj-case
Rthj-amb
30
Rthj-pcb
30
TJ
Table 4.
EAS (2)
62.5
C/W
50
C/W
C/W
300
Avalanche characteristics
Symbol
IAR
0.5
Unit
Parameter
Value
Unit
26
290
mJ
3/19
Electrical characteristics
Electrical characteristics
(TCASE= 25 C unless otherwise specified)
Table 5.
Symbol
Parameter
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS =0
IDSS
VDS = 300 V
VDS = 300 V, TC = 125 C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = 20 V
VGS(th)
RDS(on)
VGS = 10 V, ID = 17 A
Table 6.
Symbol
4/19
On/off states
Test conditions
Min.
Typ.
Max.
300
Unit
V
1
10
A
A
100
nA
0.063 0.075
Dynamic
Parameter
Test conditions
Min.
Typ.
3200
442
57
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
td(on)
tr
td(off)
tf
VDD = 150 V, ID = 17 A
RG = 4.7 VGS = 10 V
(see Figure 16)
25
38
80
46
Qg
Qgs
Qgd
VDD = 240 V, ID = 34 A,
VGS = 10 V
(see Figure 17)
90
16
40
Max.
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Table 7.
Symbol
Electrical characteristics
Test conditions
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2)
Forward on voltage
ISD
trr
Qrr
IRRM
trr
Qrr
IRRM
ISD = 34 A, VGS = 0
Min.
Typ.
Max.
Unit
34
136
A
A
1.6
ISD = 34 A,
Reverse recovery time
di/dt = 100 A/s,
Reverse recovery charge
VDD = 60 V
Reverse recovery current
(see Figure 18)
215
1.7
16
ns
nC
A
ISD = 34 A,
Reverse recovery time
di/dt = 100 A/s,
Reverse recovery charge
VDD = 60 V, Tj = 150 C
Reverse recovery current
(see Figure 18)
252
2.3
19
ns
nC
A
5/19
Electrical characteristics
2.1
Figure 2.
Figure 3.
Figure 5.
Figure 7.
Transfer characteristics
AM03365v1
ID
(A)
Tj=175C
Tc=25C
Sinlge pulse
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
100
D
S(
on
)
10s
100s
1ms
10
10ms
0.1
0.1
10
Figure 4.
100
VDS(V)
ID
(A)
10s
)
on
100s
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
100
10
1ms
10ms
Tj=175C
Tc=25C
Sinlge pulse
0.1
0.1
Figure 6.
10
100
VDS(V)
Output characteristics
AM03372v1
ID
(A)
VGS=10V
100
AM03375v1
ID
(A)
VDS = 20 V
100
6V
80
80
60
60
5V
40
40
20
20
4V
0
0
6/19
10
20
0
30 VDS(V)
VGS(V)
Electrical characteristics
BVDSS
(norm)
1.15
ID = 1mA
Figure 9.
RDS(on)
()
VGS=10V
0.072
1.10
1.05
0.071
1.00
0.070
0.95
0.90
0.069
0.85
0.80
-50
50
100
150
TJ(C)
0.068
0
10
15
ID(A)
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
AM03373v1
VGS
(V)
AM03374v1
C
(pF)
VDD=240V
ID=34A
12
Ciss
10
1000
8
6
Coss
100
4
Crss
2
0
0
20
40
60
80
10
VGS(th)
(norm)
10
100
VDS(V)
RDS(on)
(norm)
2.6
ID= 250 A
1.10
0.1
100 Qg(nC)
VGS= 10 V
ID= 17 A
2.2
1.00
0.90
1.8
0.80
1.4
0.70
1.0
0.60
0.6
0.50
0.40
0.2
-50
50
100
150
TJ(C)
-50
50
100
150
TJ(C)
7/19
Electrical characteristics
VSD
(V)
Tj=-50C
1.0
0.9
0.8
Tj=25C
0.7
0.6
Tj=175C
0.5
0.4
0.3
0
8/19
10
15
20
25
30
ISD(A)
AM03366v1
EAS
(mJ)
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
ID=26 A
VDD=50 V
20
40
Test circuits
Test circuits
47k
1k
100nF
3.3
F
2200
RL
VGS
IG=CONST
VDD
100
Vi=20V=VGMAX
VD
RG
2200
F
D.U.T.
D.U.T.
VG
2.7k
PW
47k
1k
PW
AM01468v1
AM01469v1
D.U.T.
FAST
DIODE
D
G
VD
L=100H
3.3
F
25
1000
F
VDD
2200
F
3.3
F
VDD
ID
G
RG
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
10%
AM01473v1
9/19
Dim.
Min.
Max.
4.40
4.60
A1
0.03
0.23
0.70
0.93
b2
1.14
1.70
0.45
0.60
c2
1.23
1.36
8.95
9.35
D1
7.50
10
E1
8.50
10.40
2.54
e1
4.88
5.28
15
15.85
J1
2.49
2.69
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
10/19
Typ.
0.4
0
0079457_T
12.20
5.08
1.60
3.50
9.75
Footprint
11/19
Table 9.
Dim.
Min.
Max.
4.40
4.60
0.61
0.88
b1
1.14
1.70
0.48
0.70
15.25
15.75
D1
12/19
Typ.
1.27
10
10.40
2.40
2.70
e1
4.95
5.15
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
3.75
3.85
2.65
2.95
0015988_typeA_Rev_S
13/19
Table 10.
Dim.
Min.
Max.
4.85
5.15
A1
2.20
2.60
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
0.40
0.80
19.85
20.15
15.45
15.75
5.30
14.20
14.80
L1
3.70
4.30
L2
14/19
Typ.
5.45
5.60
18.50
3.55
3.65
4.50
5.50
5.30
5.50
5.70
0075325_G
15/19
Reel
mm
mm
Dim.
16/19
Dim.
Min.
Max.
Min.
A0
10.5
10.7
B0
15.7
15.9
1.5
1.5
1.6
12.8
D1
1.59
1.61
20.2
1.65
1.85
24.4
11.4
11.6
100
K0
4.8
5.0
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
50
0.25
0.35
23.7
24.3
Max.
330
13.2
26.4
30.4
P0
Top cover
tape
P2
E
F
W
K0
B0
A0
P1
D1
Bending radius
User direction of feed
AM08852v2
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
17/19
Revision history
Revision history
Table 12.
18/19
Date
Revision
28-Sep-2012
Changes
First release.
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19/19