STB46N30M5

Automotive-grade N-channel 300 V, 53 A, 0.037 typ.,

MDmesh V Power MOSFET in a D2PAK package
Datasheet - production data

Features

TAB

Order code

VDS

RDS(on) max.

ID

STB46N30M5

300 V

0.04

53 A

Designed for automotive applications and

AEC-Q101 qualified

Amongst the best RDS(on) * area

1
2

High dv/dt capability

D PAK

Excellent switching performance

Easy to drive
100% avalanche tested
Figure 1. Internal schematic diagram

Applications
Switching applications

'7$%

Description
*

6

$0Y

This device is an N-channel MDmesh V Power

MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics well-known
PowerMESH horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.

Table 1. Device summary

Order code

Marking

Packages

Packaging

STB46N30M5

46N30M5

D2PAK

Tape and reel

April 2014
This is information on a product in full production.

DocID026126 Rev 2

1/17
www.st.com

Contents

STB46N30M5

Contents
1

Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1

Electrical characteristics (curves)

............................ 6

Test circuits

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

2/17

.............................................. 9

DocID026126 Rev 2

STB46N30M5

Electrical ratings

Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VGS

Parameter
Gate-source voltage

Value

Unit

25

ID

Drain current (continuous) at TC = 25 C

53

ID

Drain current (continuous) at TC = 100 C

34

IDM (1)

Drain current (pulsed)

212

PTOT

Total dissipation at TC = 25 C

250

Peak diode recovery voltage slope

15

V/ns

- 55 to 150

150

Value

Unit

dv/dt

(2)

Tstg
Tj

Storage temperature
Max. operating junction temperature

1. Pulse width limited by safe operating area

2. ISD 53 A, di/dt 400 A/s, VDS(peak) < V(BR)DSS, VDD=240 V

Table 3. Thermal data

Symbol

Parameter

Rthj-case

Thermal resistance junction-case max

0.5

C/W

Rthj-pcb(1)

Thermal resistance junction-pcb max

30

C/W

Value

Unit

1. When mounted on 1 inch FR-4, 2 Oz copper board

Table 4. Thermal data

Symbol

Parameter

IAR

Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max)

16

EAS

Single pulse avalanche energy

(starting Tj = 25C, ID = IAR, VDD = 50 V)

550

mJ

DocID026126 Rev 2

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17

Electrical characteristics

STB46N30M5

Electrical characteristics
(TC = 25 C unless otherwise specified).
Table 5. On /off states
Symbol
V(BR)DSS

Parameter

Test conditions

Drain-source
breakdown voltage
(VGS = 0)

ID = 1 mA

IDSS

VDS = 300 V
Zero gate voltage
drain current (VGS = 0) VDS = 300 V, TC=125 C

IGSS

Gate-body leakage
current (VDS = 0)

Min.

Typ.

300

Gate threshold voltage VDS = VGS, ID = 250 A

RDS(on)

Static drain-source
on-resistance

Unit
V

100

100

nA

0.037

0.04

Min.

Typ.

Max.

Unit

4240

pF

205

pF

9.5

pF

373

pF

202

pF

1.4

95

nC

23

nC

37

nC

VGS = 25 V

VGS(th)

Max.

VGS = 10 V, ID = 26.5 A

Table 6. Dynamic
Symbol

Parameter

Ciss

Input capacitance

Coss

Output capacitance

Crss

Reverse transfer
capacitance

Co(tr) (1)

Equivalent
capacitance time
related

Co(er) (2)

Equivalent
capacitance energy
related

Test conditions

VDS = 100 V, f = 1 MHz,

VGS = 0

VDS = 0 to 240 V, VGS = 0

Rg

Gate input resistance

Qg

Total gate charge

Qgs

Gate-source charge

Qgd

Gate-drain charge

f = 1 MHz, gate DC
Bias = 0,
test signal level = 20 mV,
ID = 0
VDD = 240 V, ID = 24 A,
VGS = 10 V
(see Figure 16)

1. Co(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
2. Co(er) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.

4/17

DocID026126 Rev 2

STB46N30M5

Electrical characteristics

Table 7. Switching times

Symbol
td(v)

Parameter
Voltage delay time

tr(v)

Voltage rise time

tf(i)

Current fall time

tc(off)

Test conditions

VDD = 240 V, ID = 32 A,
RG = 4.7 , VGS = 10 V
(see Figure 15)

Crossing time

Min.

Typ.

Max

Unit

66

ns

15

ns

24

ns

22.5

ns

Min.

Typ.

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Max. Unit

Source-drain current

53

ISDM

(1)

Source-drain current (pulsed)

212

VSD

(2)

Forward on voltage

1.5

ISD

trr

ISD = 53 A, VGS = 0

Reverse recovery time

Qrr

Reverse recovery charge

IRRM

Reverse recovery current

trr

Reverse recovery time

Qrr

Reverse recovery charge

IRRM

Reverse recovery current

ISD = 48 A, di/dt = 100 A/s

VDD = 60 V (see Figure 20)
ISD = 48 A, di/dt = 100 A/s
VDD = 60 V, Tj = 150 C
(see Figure 20)

223

ns

2.5

23

280

ns

3.9

28

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 s, duty cycle 1.5%

DocID026126 Rev 2

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Electrical characteristics

2.1

STB46N30M5

Electrical characteristics (curves)

Figure 2. Safe operating area

Figure 3. Thermal impedance

AM18133v1

ID
(A)

100
in

i
th

ar

ax

ea
R

is
S(

on

10s
100s
1ms

n m
tio by
ra
pe ited
O im
L

10

10ms
1
Tj=150C
Tc=25C
Single pulse

0.1
0.1

10

100

VDS(V)

Figure 4. Output characteristics

Figure 5. Transfer characteristics

AM18134v1

ID (A)

VGS=10V

140

9V

8V

120

VDS=25V

120

100

100

80

80
7V

60

AM18135v1

ID
(A)
140

60

40

40

20

20

6V

0
0

10

20

15

VDS(V)

Figure 6. Gate charge vs gate-source voltage

AM18136v1

VGS
(V)
12

VDD=240V
ID=24A

VDS

10

VGS(V)

Figure 7. Static drain-source on-resistance

VDS
(V)

RDS(on)
()

250

0.04

200

0.038

150

0.036

100

0.034

50

0.032

0
Qg(nC)

0.03

AM18137v1

VGS=10V

8
6
4
2
0
0

6/17

20

40

60

80

100

DocID026126 Rev 2

10

20

30

40

50

ID(A)

STB46N30M5

Electrical characteristics

Figure 8. Capacitance variations

Figure 9. Output capacitance stored energy

AM18138v1

C
(pF)

AM18139v1

Eoss
(J)
10

10000
Ciss

8
1000
6
Coss

100

4
Crss

10
1
0.1

100

10

VDS(V)

Figure 10. Normalized gate threshold voltage vs

temperature
$0Y

9*6WK

QRUP

200 250 300

100 150

VDS(V)

Figure 11. Normalized on-resistance vs

temperature
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5'6RQ
QRUP



,' $

















 

7-&

Figure 12. Normalized V(BR)DSS vs temperature

AM10399v1

V(BR)DSS

,' $
9*6 9








50

(norm)

1.08


 









7-&

Figure 13. Source-drain diode forward

characteristics
$0Y

96'
9

7- &



ID = 1mA
1.06

7- &



1.04
1.02



1.00



0.98

7- &



0.96


0.94
0.92
-50 -25


0

25

50

75 100

TJ(C)

DocID026126 Rev 2









 ,6'$

7/17
17

Electrical characteristics

STB46N30M5

Figure 14. Switching losses vs gate

resistance (1)
AM18140v1

E (J)
1000

Eon

VDD=240V
VGS=10V
ID=32A

800
600
Eoff

400
200
0
0

10

20

30

40

RG()

1. Eon including reverse recovery of a SiC diode

8/17

DocID026126 Rev 2

STB46N30M5

Test circuits

Test circuits
Figure 15. Switching times test circuit for
resistive load

Figure 16. Gate charge test circuit

VDD
12V

47k

1k
100nF

3.3
F

2200

RL

IG=CONST

VDD

VGS

100

Vi=20V=VGMAX

VD
RG

2200
F

D.U.T.

D.U.T.
VG

2.7k

PW
47k
1k

PW
AM01468v1

Figure 17. Test circuit for inductive load

switching and diode recovery times

AM01469v1

Figure 18. Unclamped inductive load test circuit

D
G

D.U.T.

FAST
DIODE

VD

L=100H

3.3
F

25

1000
F

VDD

2200
F

3.3
F

VDD

ID

G
RG

Vi

D.U.T.

Pw
AM01470v1

AM01471v1

Figure 19. Unclamped inductive waveform

V(BR)DSS

Figure 20. Switching time waveform

Concept waveform for Inductive Load Turn-off

Id

VD

90%Vds

90%Id

Tdelay-off
-off

IDM
Vgs
90%Vgs

on

ID
Vgs(I(t))
))

VDD

VDD

10%Id

10%Vds

Vds
Trise

AM01472v1

DocID026126 Rev 2

Tfall

Tcross --over

AM05540v1

9/17
17

Package mechanical data

STB46N30M5

Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

10/17

DocID026126 Rev 2

STB46N30M5

Package mechanical data

Figure 21. DPAK (TO-263) drawing

0079457_T

DocID026126 Rev 2

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Package mechanical data

STB46N30M5

Table 9. DPAK (TO-263) mechanical data

mm
Dim.
Min.

Typ.

4.40

4.60

A1

0.03

0.23

0.70

0.93

b2

1.14

1.70

0.45

0.60

c2

1.23

1.36

8.95

9.35

D1

7.50

10

E1

8.50

10.40

2.54

e1

4.88

5.28

15

15.85

J1

2.49

2.69

2.29

2.79

L1

1.27

1.40

L2

1.30

1.75

R
V2

12/17

Max.

0.4
0

DocID026126 Rev 2

STB46N30M5

Package mechanical data

Figure 22. DPAK footprint(a)
16.90

12.20

5.08

1.60

3.50
9.75

Footprint

a. All dimension are in millimeters

DocID026126 Rev 2

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17

Packaging mechanical data

STB46N30M5

Packaging mechanical data

Figure 23. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T

P0

Top cover
tape

P2

E
F
B1

K0

For machine ref. only

including draft and
radii concentric around B0

W
B0

A0

P1

D1

User direction of feed

Bending radius
User direction of feed

AM08852v1

14/17

DocID026126 Rev 2

STB46N30M5

Packaging mechanical data

Figure 24. Reel
T

REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C

Full radius

G measured at hub

Tape slot
in core for
tape start 25 mm min.
width

AM08851v2

Table 10. DPAK (TO-263) tape and reel mechanical data

Tape

Reel

mm

mm

Dim.

Dim.
Min.

Max.

A0

10.5

10.7

B0

15.7

15.9

1.5

1.5

1.6

12.8

D1

1.59

1.61

20.2

1.65

1.85

24.4

11.4

11.6

100

K0

4.8

5.0

P0

3.9

4.1

P1

11.9

12.1

Base qty

1000

P2

1.9

2.1

Bulk qty

1000

50

0.25

0.35

23.7

24.3

DocID026126 Rev 2

Min.

Max.
330

13.2

26.4

30.4

15/17
17

Revision history

STB46N30M5

Revision history
Table 11. Document revision history

16/17

Date

Revision

Changes

24-Mar-2014

Initial release.

11-Apr-2014

Document status promoted from preliminary data to production

data
Minor text changes

DocID026126 Rev 2

STB46N30M5

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