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Features
7$%
Type
VDS
STB130NS04ZB-1 Clamped
RDS(on)
max.
ID
9 m
80 A
,3$.
Applications
Figure 1. Internal schematic diagram
Description
This fully clamped MOSFET is produced using
STs latest advanced Mesh overlay process,
which is based on an innovative strip layout. The
inherent benefits of the new technology coupled
with the extra clamping capabilities make this
product particularly suitable for the harshest
operation conditions, such as those encountered
in the automotive environment. The device is also
well-suited for other applications where extra
ruggedness is required.
Marking
Package
Packaging
STB130NS04ZB-1
B130NS04ZB
I2PAK
Tube
September 2014
This is information on a product in full production.
DocID026896 Rev 1
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www.st.com
Contents
STB130NS04ZB-1
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
............................ 6
Test circuit
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STB130NS04ZB-1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
Clamped
VGS
Gate-source voltage
Clamped
ID
80
ID
60
IDG
50
mA
IGS
50
mA
320
300
Derating factor
2.0
W/C
IDM
(1)
PTOT
ESD
kV
TJ
Tstg
-55 to 175
Parameter
Value
Unit
0.50
C/W
62.5
C/W
Parameter
Value
Unit
IAS
80
EAS
500
mJ
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Electrical characteristics
STB130NS04ZB-1
Electrical characteristics
(TCASE=25C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
ID = 1 mA, VGS = 0
-40 < Tj < 175 C
IDSS
VDS = 16 V
VDS = 16 V,Tj = 125 C
10
100
A
A
IGSS
VGS = 10 V
10
nA
VGSS
Gate-source breakdown
voltage
IGS= 100A
18
VGS(th)
VDS = VGS = ID = 1 mA
RDS(on)
Static drain-source on
resistance
VGS = 10 V ,ID = 40 A
V(BR)DSS
33
Table 6. Dynamic
Symbol
gfs (1)
Parameter
Test conditions
Forward transconductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDD=20V, ID = 80A
VGS =10V
(see Figure 15)
Min.
Typ.
Max.
50
2700
pF
1275
pF
285
pF
80
20
nC
27
nC
Min.
Typ.
Max.
Unit
40
ns
10
ns
220
ns
100
ns
105
Unit
nC
4/12
Parameter
Test conditions
VDD = 17.5 V, ID = 40 A,
RG = 4.7 , VGS = 10 V
(see Figure 14)
Fall time
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STB130NS04ZB-1
Electrical characteristics
(1)
VSD(2)
Parameter
Test conditions
Min.
Typ.
Max
Unit
Source-drain current
80
320
1.5
Forward on voltage
ISD=80A, VGS=0
trr
90
ns
Qrr
0.18
IRRM
ISD=80A,
di/dt = 100A/s,
VDD=25V, Tj=150C
(see Figure 16)
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Electrical characteristics
2.1
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STB130NS04ZB-1
Figure 6. Transconductance
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Electrical characteristics
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Test circuit
STB130NS04ZB-1
Test circuit
Figure 14. Switching times test circuit for
resistive load
47k
1k
100nF
3.3
F
2200
RL
IG=CONST
VDD
VGS
100
Vi=20V=VGMAX
VD
RG
2200
F
D.U.T.
D.U.T.
VG
2.7k
PW
47k
1k
PW
AM01468v1
AM01469v1
D
G
D.U.T.
FAST
DIODE
VD
L=100H
3.3
F
25
1000
F
VDD
2200
F
3.3
F
VDD
ID
G
RG
Vi
D.U.T.
Pw
AM01470v1
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STB130NS04ZB-1
typ
max.
4.40
4.60
A1
2.40
2.72
0.61
0.88
b1
1.14
1.70
0.49
0.70
c2
1.23
1.32
8.95
9.35
2.40
2.70
e1
4.95
5.15
10
10.40
13
14
L1
3.50
3.93
L2
1.27
1.40
0004982_Rev_H
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Revision history
Revision history
Table 10. Revision history
Date
Revision
16-Sep-2014
Changes
First release.
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STB130NS04ZB-1
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
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