Sistema para El Control de

SISTEMA PARA EL CONTROL DE
TEMPERATURA
Prácticas de Sistemas Electrónicos

4º Curso de Ingeniería Industrial
Sistema para el Control de Temperatura
CONTENIDO
1 INTRODUCCIÓN ............................................................................................................................2
2 DESCRIPCIÓN Y ESPECIFICACIONES GENERALES DEL SISTEMA...............................2
3 MÓDULO SENSOR-ACONDICIONADOR..................................................................................4
3.1 REQUISITOS FUNCIONALES..............................................................................................................4

3.2 ESPECIFICACIONES DE DISEÑO ........................................................................................................5
4 MÓDULO DE ALARMA.................................................................................................................8
4.1 REQUISITOS FUNCIONALES..............................................................................................................8

4.2 ESPECIFICACIONES DEL DISEÑO ......................................................................................................8
5 MÓDULO ACTUADOR ................................................................................................................12
5.1 REQUISITOS FUNCIONALES............................................................................................................12

5.2 ESPECIFICACIONES DE DISEÑO ......................................................................................................13
6 DOCUMENTACIÓN A ENTREGAR CON EL PROYECTO DE CADA MÓDULO ............15
7 ANEXO. ESQUEMÁTICOS .........................................................................................................16
8 ANEXO. HOJAS DE CARACTERÍSTICAS DE LOS COMPONENTES ...............................16
-1-
1 Introducción
Este documento contiene la información necesaria para poder diseñar un

sistema que permite mantener la temperatura del agua de un recipiente dentro
de un margen de error.
El diseño del sistema propuesto forma parte de la formación práctica de los

alumnos de 4º curso de la titulación de Ingeniero Industrial matriculados en la
asignatura de Sistemas Electrónicos
Con su desarrollo, se pretende integrar dentro de un sistema completo, un

conjunto de sistemas electrónicos elementales previamente estudiados en las
clases de teoría. El diseño del sistema, la construcción de un prototipo de
laboratorio y la prueba del mismo son tareas a realizar en la secuencia. La
tarea encomendada quedará completa con la demostración del buen
funcionamiento dentro de especificaciones y el suministro de la documentación
solicitada.
Para la realización d la práctica, se han configurado grupos de 15 alumnos,

subdivididos en tres grupos. Cada uno de los tres grupos será responsable del
diseño de un módulo o subsistema de los tres que integran el sistema. Elegirán
entre sus compañeros a un Director de Proyecto y a tres Subdirectores, uno
por cada módulo. Su misión será la de canalizar hacia el profesor cuantas
dudas o problemas se presenten durante las fases del desarrollo del proyecto
2 Descripción y especificaciones generales del Sistema
El propósito del sistema es el de mantener la temperatura del agua contenida

en un recipiente de un litro de capacidad, dentro de un margen de temperaturas
comprendido entre 89ºC y 91ºC.
Como transductor de la temperatura del agua se utiliza una termorresistencia

de platino del tipo PT–100.
Como elemento calefactor del agua se utiliza una resistencia de 230Vca de

voltaje nominal y 300 W de potencia.
El sistema completo está integrado por los siguientes módulos:
-2-
a. Sensor-acondicionador
b. Alarma
c. Actuador
El módulo sensor-acondicionador suministra una señal proporcional al error

entre la temperatura actual del agua y la de consigna. Esta señal se envía a los
otros módulos.
El módulo de alarma proporciona una señal óptica y otra acústica cuando la

temperatura del agua es inferior a 85ºC o superior a 95ºC.
El módulo actuador conecta y desconecta la resistencia calefactora para

mantener la temperatura del agua dentro del margen establecido. Las
especificaciones generales del sistema son las siguientes:
Alimentación:
- 230Vca, 50 Hz para la resistencia calefactora.
- +/- 15 Vcc para la circuitería electrónica, proporcionada por las fuentes del
laboratorio, o por fuentes de alimentación ensambladas por los alumnos.
Temperaturas:
- Rango 89ºC – 91ºC para el agua del recipiente.
- 85ºC<=t<095ºC para la alarma. Fuera de este rango se suministrará señal

óptica y acústica.
Construcción:
La construcción de estos circuitos se realizará sobre placas de inserción de

componentes, para facilitar el montaje de los mismos.
Sobre cada placa se dispondrán puntos de test accesibles.
Todas las resistencias utilizadas en cada uno de los módulos que

componen esta práctica, tendrán una tolerancia del 1% y los
potenciómetros deberán ser multivuelta.
Los valores normalizados para las resistencias, así como sus códigos de
colores, se muestran en una de las hojas anexas a este manual.
-3-
Es recomendable, que dentro de cada módulo, se haga el montaje por

partes, y de cada parte, se compruebe que el funcionamiento del circuito sea
el correcto.
Toda la fase de montaje y puesta a punto de los circuitos, debe realizarse

teniendo delante el diagrama del circuito diseñado previamente.
La Figura 2.1 muestra el diagrama de bloques del sistema completo.
Sensor Resistencia
Depósito de Agua
PT-100 de Caldeo
Módulo Módulo
Sensor-Acondicionador Actuador
Módulo de Altavoz
Alarma
Figura 2.1. Diagrama de bloques del sistema.
3 Módulo sensor-acondicionador
3.1 Requisitos funcionales
Suministra una señal proporcional al error entre el valor de consigna de

temperatura (90ºC) y el valor actual, sensado por una termorresistencia del tipo
PT – 100.
La señal de error se envía al módulo de alarma y al módulo actuador.
-4-
Los valores para la señal de salida del circuito serán los siguientes:
♦ 0V para una temperatura de 90ºC

♦ 10V para una temperatura de 95ºC
♦ -10V para una temperatura de 85ºC
3.2 Especificaciones de diseño
La Figura 3.1 muestra el diagrama de bloques del circuito sensor-

acondicionador.
Generador de
5 Vcc
Sensor de
temperatura Puente con Compensación
compensación lineal consigna (ajustable)
Amplificador de
Salida proporcional a
salida (ajustable) la temperatura
Figura 3.1. Diagrama de bloques del módulo sensor-actuador.
El sensor de temperatura es una termorresistencia PT-100, cuyo valor para 0ºC

es de 100 Ohmios, esta resistencia va incrementando su valor a medida que
aumenta la temperatura, de forma casi lineal. Esta termorresistencia será una
de las ramas de un puente de Wheatstone como el que se muestra en la Figura
3.2. El valor de resistencia de la PT-100 para diferentes temperaturas, se
muestra en una de las hojas anexas a este manual.
El puente de Wheatstone estará alimentado con 4,7 Vcc, que deben ser
obtenidos a partir de 15 Vcc, con un circuito basado en un diodo Zener de 4,7
voltios. Este circuito puente es un circuito apropiado para la medida con
precisión de pequeñas variaciones de resistencia. El amplificador operacional
del circuito hace que por la PT-100 circule siempre la misma corriente,
independientemente del valor de la resistencia de la PT-100, de esta forma, la
-5-
tensión en la PT-100, variará de forma proporcional a la variación de su

resistencia.
Figura 3.2. Puente de Wheatstone con linealidad
La respuesta del circuito mantendrá la misma linealidad que la que nos aporta
la PT-100. Las resistencias R1 y R2, determinarán la magnitud de la corriente
que circulará por las ramas del puente, y la resistencia R3, equilibrará el puente
para una temperatura de 0ºC. Dado que la salida debe estar equilibrada en 0
voltios para 90ºC, la corriente de desequilibrio que se producirá en el puente,
debe ser aportada por una fuente de corriente adicional que debe hacer que la
salida sea 0 voltios para 90ºC.
El circuito que se usará como fuente de corriente se muestra en la Figura 3.3.
La corriente que circulará por la salida de la fuente de corriente viene

determinada por el voltaje del diodo zener y por la resistencia R, es decir, si
despreciamos la corriente de base del transistor, la corriente de salida es igual
a la tensión en el diodo zener, dividido por la resistencia R. Dado que la
corriente de salida debe ser ajustable, para una buena calibración del circuito,
parte de la resistencia R debería ser ajustable, mediante la utilización de una
resistencia en serie con un potenciómetro. Con este potenciómetro se calibrará
el offset de salida, es decir, debemos conseguir que a 90ºC, la salida sea 0
voltios.
-6-
Figura 3.3. Fuente de corriente de compensación
Por último, la variación en la corriente que se produce por la R3 del puente de

Wheatstone, producida por una variación en la resistencia de la PT-100, debe
ser convertida a una tensión de salida del módulo, de acuerdo a las
especificaciones funcionales dadas.
Para esta conversión, se utilizará un circuito amplificador inversor como el que

se muestra en la Figura 3.4.
Figura 3.4. Circuito amplificador de salida
-7-
El producto de la corriente de desequilibrio multiplicada por R, será la tensión

que se obtiene en la salida. Para un buen ajuste de la salida del circuito,
debemos ajustar R a un valor que nos dé exactamente la salida requerida, por
esto, R debería estar formada por una resistencia en serie con un
potenciómetro que nos permita ajustar la ganancia de salida a 2 voltios por
cada 1ºC de variación de la temperatura de la PT-100.
Las hojas de características de todos los componentes electrónicos necesarios

para la realización de este módulo, se pueden encontrar en la documentación
anexa a este manual de prácticas.
La señal de error de temperatura obtenida con este módulo, se envía a los

otros módulos que componen la práctica.
4 Módulo de alarma
Recibe la señal de error de temperatura procedente del módulo sensor-

acondicionador. Se iniciará una alarma, con indicación óptica y acústica,
cuando la temperatura exceda 95ºC o sea inferior a 85ºC.
La señal acústica deberá tener un tono correspondiente a una frecuencia de

alrededor de 2KHz, modulado por una señal de baja frecuencia, que la conecte
y desconecte con duraciones de conexión-desconexión de 2/3 de segundo y
1/3 de segundo, respectivamente.
La señal óptica parpadeará cuando se produzca la alarma.
4.2 Especificaciones del diseño
La Figura 4.1 muestra el diagrama de bloques del módulo de alarma.
La entrada a este módulo, es la salida del módulo sensor-acondicionador. Lo

primero que encuentra esta señal, es un circuito comparador de ventana. Este
circuito nos debe dar una señal de un 1 lógico (aproximadamente 13 Vcc)
cuando la señal de entrada supere los +10 voltios (temperatura del agua
superior a 95ºC), o sea inferior a –10 voltios (temperatura del agua inferior a
-8-
85ºC). Cuando la señal de entrada está entre –10 voltios y +10 voltios, la salida
de este comparador debe ser un cero lógico (aproximadamente 0 Vcc).
Entrada proporcional Comparador de

a la temperatura
ventana
Oscilador de alta
frecuencia Oscilador de baja
(Puente de Wien) frecuencia (555)
Señal luminosa (led)
Amplificador de salida con Altavoz

ajuste de volumen
Figura 4.1. Diagrama de bloques del módulo de alarma.
El circuito comparador de ventana puede verse en la Figura 4.2.
Figura 4.2. Circuito comparador de ventana.
-9-
Las resistencias R2 y R4 deben implementarse como una resistencia en serie

con un potenciómetro, para poder hacer un ajuste preciso de las tensiones
límite del comparador de ventana.
La salida del comparador de ventana debe activar un oscilador de baja

frecuencia (2/3 de segundo a nivel lógico alto y 1/3 de segundo a nivel lógico
bajo), cuando su salida sea de nivel alto. Este circuito oscilador de baja
frecuencia se basará en el circuito integrado LM555. En este caso, utilizaremos
la aplicación denominada en las hojas de características como “ASTABLE
OPERATION”.
La salida de este circuito oscilador de baja frecuencia activará y desactivará,

cuando la salida sea de nivel alto y bajo respectivamente, a un diodo led que
indicará de forma luminosa que ha ocurrido una alarma. Al mismo tiempo,
también se activará un oscilador de frecuencia aproximada a 2kHz, que hará
sonar una señal acústica.
El oscilador de 2kHz, se implementará mediante un oscilador en Puente de

Wien, como el que se muestra en la Figura 4.3.
Figura 4.3. Circuito oscilador Puente de Wien.
Este oscilador da en su salida una señal sinusoidal cuya frecuencia viene dada
por la relación:
1
Fosc =
2πRC
- 10 -
Para que el oscilador oscile, la relación de las resistencia R1 y R2 debe ser tal
que R2 sea ligeramente mayor que el doble de R1. Para hacer este ajuste, se
debe implementar R2 como una resistencia en serie con un potenciómetro.
Para el ajuste de R2, partiendo de un valor bajo de resistencia, a medida que
ésta se acerque a su valor final, se observará que la forma de la señal de salida
va aumentando su voltaje. Si el valor de R2 se hace excesivamente grande, se
observará que la señal de salida se recorta en los picos positivo y negativo, al
llegar a unos +13V y –13V, aproximadamente, debido a la saturación del
amplificador operacional.
La salida del oscilador de 2kHz, debe ser enviada a un altavoz para activar la
alarma acústica, ya que con una señal de 2kHz aplicada a un altavoz, se
consigue un pitido perfectamente audible por el oído humano. La señal de
salida directa del oscilador no puede dar la corriente necesaria para hacer que
la señal acústica sea perfectamente audible. Para conseguir que lo sea, se
debe utilizar una etapa de salida amplificadora de corriente, que nos permita
también regular el volumen de la señal acústica. El circuito de salida es el que
aparece en la Figura 4.4.
Figura 4.4. Circuito de salida acústica.
- 11 -
Primero, el condensador elimina la componente continua que pueda venir del

oscilador de 2kHz, y con el potenciómetro, regularemos la amplitud de tensión
que va a ser aplicada al altavoz. El amplificador operacional está conectado en
forma de seguidor de tensión, en cuya salida se ha colocado un amplificador de
corriente de Tipo B o “push-pull”. En este amplificador de Tipo B, durante el
semiciclo positivo de la tensión de salida, el transistor PNP conducirá mientras
que el transistor PNP estará en corte, por el contrario, durante el semiciclo
negativo, el transistor NPN conducirá mientras que el transistor NPN estará en
corte.
Se debe tener cuidado con la tensión aplicada al altavoz, ya que si ésta es

excesiva, podemos quemar el altavoz y los transistores. El alumno debe
calcular cual es la tensión máxima aplicable al altavoz, sin que éste supere una
potencia de 0,5 W.

5 Módulo actuador
Recibe la tensión de error proporcional a la diferencia entre la temperatura

actual y la consigna, proporcionada por el módulo sensor-acondicionador.
Conecta y desconecta la resistencia de caldeo en las siguientes condiciones:
- Conexión señal de error

89ºC -2V
- Desconexión señal de error

91ºC +2V
Se trata de un controlador todo-nada con una banda de histéresis de 91ºC –

89ºC = 2ºC, correspondiente a 4V en la señal de error.
- 12 -
5.2 Especificaciones de diseño
La Figura 5.1 muestra el diagrama de bloques del módulo actuador.
Entrada proporcional a la
Comparador con
temperatura
histéresis
Conmutador de Paso
por cero Optoacoplador
(U217B)
Triac Resistencia de caldeo
Figura 5.1. Diagrama de bloques del módulo actuador.
La entrada a este módulo, es la salida del módulo sensor-acondicionador. Lo

primero que encuentra esta señal, es un circuito comparador con histéresis,
como el que aparece en la Figura 5.2.
Figura 5.2. Circuito comparador con histéresis.
Este circuito nos debe dar un 1 lógico (amplificador operacional saturado a

positivo) cuando la señal de entrada sea menor de –2 voltios, que significa que
la temperatura indicada por el módulo sensor-acondicionador ha bajado de
- 13 -
89ºC, y se debe encender el calentador. Por el contrario, el circuito debe dar un

0 lógico (amplificador operacional saturado a negativo) cuando la señal de
entrada supere los +2 voltios, que significa que la temperatura indicada por el
módulo sensor-acondicionador ha subido de 91ºC, y se debe apagar el
calentador. Por tanto, la salida de este circuito no depende sólo del valor que
en ese momento tenga la entrada, sino que también depende del estado de la
entrada en los instantes previos.
Para ajustar los valores a los que se debe conmutar la salida, puede
implementarse R2 como una resistencia en serie con un potenciómetro. Se
deberá seleccionar los valores de resistencia y potenciómetro de forma que se
pueda hacer el ajuste para todo el rango de tensión de salida de saturación que
el amplificador operacional nos pueda dar.
La salida de este circuito debe ser acondicionada para ser aplicada a un

optoacoplador 4N25, cuya salida activará o desactivará la resistencia de
caldeo. Aislando ópticamente el circuito de control del circuito de potencia,
protegemos el control, entre otras cosas, de posibles perturbaciones en la red
eléctrica.
La resistencia de caldeo, debe ser alimentada con 230 voltios de corriente

alterna de 50 Hz, y da una potencia de 300W. Para la activación y
desactivación de esta resistencia, utilizaremos un triac como interruptor. La
activación y desactivación de la puerta del triac se hace con un circuito basado
en el U217B. Este circuito se muestra en la Figura 5.3. La resistencia
calefactora se activará cuando circule corriente suficiente por el diodo del
optoacoplador, y se desactivará cuando no circule corriente por el diodo del
optoacoplador.
- 14 -
Figura 5.3. Circuito de activación de la resistencia de caldeo.

6 Documentación a entregar con el proyecto de cada módulo
- Esquema del circuito.
- Explicación funcional de cada todos los elementos que componen el

circuito.
- Cálculos y justificaciones de los valores de los componentes elegidos en el

diseño.
- Coste de las siguientes partidas:
- 15 -
a. Horas empleadas en el diseño
b. Horas empleadas en el montaje
c. Horas empleadas en la preparación de la documentación
7 ANEXO. Esquemáticos
La siguientes páginas muestran los esquemáticos del circuito en el que faltan

los valores de algunos componentes.
8 ANEXO. Hojas de características de los componentes
Las siguientes páginas muestran las hojas de características de los

componentes que se usarán en los circuitos.
- 16 -
5 4 3 2 1
D D
+15V
BORNA 3P
3
J1A
1
2
3
P6
2
1
2
3
+15V +15 -15 D2
1
R0
R6 D3
Q1
BC556
C
D1 C
-15V
R8 R9 +15V
C1
C3
R1 R2
100nF-50V
U1
100nF-50V
LM741 U2
LM741
5
4
7
1
J2
- 2 3 +
6 6 vo 1 1
+ 3 2 - 2 2
R4 R3
1
7
4
5
PT-100 BORNA 2P
C2 vpt
C4
B B
100nF-50V
+15V
100nF-50V
-15V
P5
R5
3 1
2
A A
Title
SISTEMAS ELECTRÓNICOS. 4º CURSO INGENIERÍA INDUSTRIAL
Size Document Number Rev
B Sistema para el Control de Temperatura. SENSOR-ACONDICIONADOR J.C.
Date: Sheet 1 of 3
5 4 3 2 1
5 4 3 2 1
D D
P7
BORNA 3P R6 R7
3 1
J1A
1
2
3
2
R10
1
2
3
+15 -15 +15V
-15V
+15V -15V R4
U3 C9
3
LM555N
C6
DSCHG 7
P1 3 D3 U4
OUT R5
2
4
5
LED
U1 4 RST TRG 2 LM741
2
4
5
-
LM741 5 CV THR 6 6
D1
1
2 3
C5
- +
6
VCC
GND
3 + C1
7
1
C
R1 C11 C
8
1
7
1
+15V R8
C7 C2
R3
C8
C3
J2 R0
R9
1 vin
1 +15V
2 2
BORNA 2P
+15V
C4
-15V
+15V
C13
Q1
-15V BD135
3
C10
U5
3
LM741 P3
1
7
P2 U2 LS1 + 3 2
B 2 vo Q2 6 B
4
5
LM741 8R-1/2W BD136 - 2
D2
2 -
1
1
5
4
3 +
7
1
C14
R2 -15V
-15V
C12
+15V
A A
Title
B Sistema para el Control de Temperatura. ALARMA J.C.
Date: Sheet 2 of 3
5 4 3 2 1
5 4 3 2 1
D D
R4
-15V
BORNA 3P
1
6
5
J1A
C2
1
2
3
U2
1
2
3
+15 -15 D1 4N25
2
3
4
U1
4
5
J2
LM741
2 vi 2 -
2
C 1 1 6 C
D2 R5
3 +
R3 L
BORNA 2P
7
1
R7
C3
J4 R6
D3 2
+15V 2 R8
1 1
LED
BORNA 2P
R2
J3
3
2
8
7
6
5
RED 2
1 1
P1
VS
2 U3
OUT
GND
RESISTENCIA CALDEO 300W/230Vac

BORNA 2P Q1 U217B
B B
1
RAMPE VSYNC
CRAMP
OP+
OP-
R1
1
2
3
4
C1 R9
A A
Title
B Sistema para el Control de Temperatura. ACTUADOR J.C.
Date: Sheet 3 of 3
5 4 3 2 1
PT100 TEMPERATURE / RESISTANCE TABLE
°C 0 1 2 3 4 5 6 7 8 9 °C
-200 18.4932 -200

-190 22.8031 22.3737 21.9439 21.5139 21.0834 20.6526 20.2215 19.7899 19.3580 18.9258 -190
-180 27.0779 26.6520 26.2257 25.7990 25.3720 24.9447 24.5171 24.0891 23.6608 23.2321 -180
-170 31.3200 30.8972 30.4741 30.0507 29.6270 29.2029 28.7786 28.3539 27.9289 27.5036 -170
-160 35.5313 35.1115 34.6914 34.2710 33.8503 33.4294 33.0081 32.5865 32.1646 31.7425 -160
-150 39.7137 39.2967 38.8794 38.4619 38.0440 37.6260 37.2076 36.7889 36.3700 35.9508 -150
-140 43.8691 43.4547 43.0401 42.6252 42.2101 41.7946 41.3790 40.9631 40.5469 40.1304 -140
-130 47.9993 47.5873 47.1752 46.7628 46.3501 45.9372 45.5241 45.1107 44.6971 44.2832 -130
-120 52.1058 51.6962 51.2863 50.8762 50.4659 50.0554 49.6446 49.2336 48.8224 48.4109 -120
-110 56.1903 55.7828 55.3751 54.9672 54.5591 54.1507 53.7422 53.3334 52.9244 52.5152 -110
-100 60.2541 59.8486 59.4429 59.0371 58.6310 58.2247 57.8182 57.4115 57.0047 56.5976 -100
-90 64.2987 63.8950 63.4912 63.0873 62.6831 62.2787 61.8742 61.4695 61.0645 60.6594 -90
-80 68.3251 67.9233 67.5212 67.1190 66.7166 66.3141 65.9114 65.5084 65.1054 64.7021 -80
-70 72.3346 71.9344 71.5340 71.1335 70.7328 70.3319 69.9309 69.5297 69.1284 68.7268 -70
-60 76.3282 75.9296 75.5307 75.1318 74.7326 74.3334 73.9339 73.5343 73.1346 72.7347 -60
-50 80.3068 79.9096 79.5123 79.1148 78.7171 78.3194 77.9214 77.5234 77.1251 76.7268 -50
-40 84.2713 83.8754 83.4795 83.0834 82.6871 82.2908 81.8943 81.4976 81.1008 80.7039 -40
-30 88.2222 87.8277 87.4331 87.0383 86.6434 86.2484 85.8532 85.4579 85.0625 84.6669 -30
-20 92.1603 91.7671 91.3737 90.9802 90.5866 90.1929 89.7990 89.4050 89.0109 88.6166 -20
-10 96.0861 95.6941 95.3019 94.9097 94.5173 94.1247 93.7321 93.3394 92.9465 92.5535 -10
0 100.0000 99.6091 99.2182 98.8271 98.4359 98.0445 97.6531 97.2615 96.8698 96.4780 0
0 100.0000 100.3907 100.7814 101.1719 101.5623 101.9526 102.3427 102.7328 103.1227 103.5125 0
10 103.9022 104.2918 104.6813 105.0706 105.4599 105.8490 106.2380 106.6269 107.0156 107.4043 10
20 107.7928 108.1813 108.5696 108.9578 109.3458 109.7338 110.1216 110.5094 110.8970 111.2845 20
30 111.6718 112.0591 112.4463 112.8333 113.2202 113.6070 113.9937 114.3802 114.7667 115.1530 30
40 115.5392 115.9254 116.3113 116.6972 117.0830 117.4686 117.8541 118.2395 118.6248 119.0100 40
50 119.3951 119.7800 120.1648 120.5495 120.9341 121.3186 121.7030 122.0872 122.4713 122.8554 50
60 123.2392 123.6230 124.0067 124.3902 124.7737 125.1570 125.5402 125.9233 126.3063 126.6891 60
70 127.0718 127.4545 127.8370 128.2194 128.6016 128.9838 129.3658 129.7478 130.1296 130.5113 70
80 130.8928 131.2743 131.6556 132.0369 132.4180 132.7990 133.1799 133.5606 133.9413 134.3218 80
90 134.7022 135.0825 135.4627 135.8428 136.2227 136.6026 136.9823 137.3619 137.7414 138.1207 90
100 138.5000 138.8791 139.2582 139.6371 140.0159 140.3945 140.7731 141.1515 141.5299 141.9081 100
110 142.2862 142.6642 143.0420 143.4198 143.7974 144.1749 144.5523 144.9296 145.3068 145.6838 110
120 146.0608 146.4376 146.8143 147.1909 147.5673 147.9437 148.3199 148.6960 149.0721 149.4479 120
130 149.8237 150.1994 150.5749 150.9504 151.3257 151.7009 152.0759 152.4509 152.8257 153.2005 130
140 153.5751 153.9496 154.3240 154.6982 155.0724 155.4464 155.8203 156.1941 156.5678 156.9414 140
150 157.3149 157.6882 158.0614 158.4345 158.8075 159.1804 159.5531 159.9258 160.2983 160.6707 150
160 161.0430 161.4152 161.7872 162.1592 162.5310 162.9027 163.2743 163.6458 164.0172 164.3884 160
170 164.7596 165.1306 165.5015 165.8723 166.2429 166.6135 166.9839 167.3542 167.7245 168.0945 170
180 168.4645 168.8344 169.2041 169.5737 169.9432 170.3126 170.6819 171.0511 171.4201 171.7890 180
190 172.1579 172.5266 172.8951 173.2636 173.6319 174.0002 174.3683 174.7363 175.1042 175.4719 190
200 175.8396 176.2071 176.5746 176.9419 177.3090 177.6761 178.0431 178.4099 178.7766 179.1432 200
210 179.5097 179.8761 180.2424 180.6085 180.9745 181.3405 181.7063 182.0719 182.4375 182.8029 210
220 183.1683 183.5335 183.8986 184.2636 184.6284 184.9932 185.3578 185.7223 186.0867 186.4510 220
230 186.8152 187.1793 187.5432 187.9070 188.2707 188.6343 188.9978 189.3611 189.7244 190.0875 230
240 190.4505 190.8134 191.1762 191.5389 191.9014 192.2638 192.6262 192.9884 193.3504 193.7124 240
250 194.0743 194.4360 194.7976 195.1591 195.5205 195.8818 196.2429 196.6040 196.9649 197.3257 250
260 197.6864 198.0469 198.4074 198.7677 199.1280 199.4881 199.8481 200.2079 200.5677 200.9274 260
270 201.2869 201.6463 202.0056 202.3648 202.7238 203.0828 203.4416 203.8003 204.1589 204.5174 270
280 204.8758 205.2340 205.5922 205.9502 206.3081 206.6659 207.0236 207.3811 207.7386 208.0959 280
290 208.4531 208.8102 209.1672 209.5240 209.8808 210.2374 210.5939 210.9503 211.3066 211.6628 290
300 212.0188 212.3747 212.7305 213.0862 213.4418 213.7973 214.1527 214.5079 214.8630 215.2180 300
310 215.5729 215.9277 216.2823 216.6369 216.9913 217.3456 217.6998 218.0539 218.4078 218.7617 310
320 219.1154 219.4690 219.8225 220.1759 220.5291 220.8823 221.2353 221.5882 221.9410 222.2937 320
330 222.6463 222.9987 223.3511 223.7033 224.0554 224.4074 224.7592 225.1110 225.4626 225.8142 330
340 226.1656 226.5169 226.8680 227.2191 227.5700 227.9209 228.2716 228.6222 228.9726 229.3230 340
350 229.6733 230.0234 230.3734 230.7233 231.0731 231.4227 231.7723 232.1217 232.4710 232.8202 350
LM741 Operational Amplifier
August 2000
LM741
Operational Amplifier
General Description The LM741C is identical to the LM741/LM741A except that
the LM741C has their performance guaranteed over a 0˚C to
The LM741 series are general purpose operational amplifi- +70˚C temperature range, instead of −55˚C to +125˚C.
ers which feature improved performance over industry stan-
dards like the LM709. They are direct, plug-in replacements
for the 709C, LM201, MC1439 and 748 in most applications.
The amplifiers offer many features which make their applica-
tion nearly foolproof: overload protection on the input and
output, no latch-up when the common mode range is ex-
ceeded, as well as freedom from oscillations.
Connection Diagrams
Dual-In-Line or S.O. Package
Metal Can Package
DS009341-3
DS009341-2 Order Number LM741J, LM741J/883, LM741CN

Note 1: LM741H is available per JM38510/10101 See NS Package Number J08A, M08A or N08E
Order Number LM741H, LM741H/883 (Note 1),
LM741AH/883 or LM741CH
Ceramic Flatpak
See NS Package Number H08C
DS009341-6
Order Number LM741W/883

See NS Package Number W10A
Typical Application
Offset Nulling Circuit
DS009341-7
© 2000 National Semiconductor Corporation DS009341 www.national.com

LM741
Absolute Maximum Ratings (Note 2)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 7)
LM741A LM741 LM741C
Supply Voltage ± 22V ± 22V ± 18V
Power Dissipation (Note 3) 500 mW 500 mW 500 mW
Differential Input Voltage ± 30V ± 30V ± 30V
Input Voltage (Note 4) ± 15V ± 15V ± 15V
Output Short Circuit Duration Continuous Continuous Continuous
Operating Temperature Range −55˚C to +125˚C −55˚C to +125˚C 0˚C to +70˚C
Storage Temperature Range −65˚C to +150˚C −65˚C to +150˚C −65˚C to +150˚C
Junction Temperature 150˚C 150˚C 100˚C
Soldering Information
N-Package (10 seconds) 260˚C 260˚C 260˚C
J- or H-Package (10 seconds) 300˚C 300˚C 300˚C
M-Package
Vapor Phase (60 seconds) 215˚C 215˚C 215˚C
Infrared (15 seconds) 215˚C 215˚C 215˚C
See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering
surface mount devices.
ESD Tolerance (Note 8) 400V 400V 400V
Electrical Characteristics (Note 5)

Parameter Conditions LM741A LM741 LM741C Units
Min Typ Max Min Typ Max Min Typ Max
Input Offset Voltage TA = 25˚C
RS ≤ 10 kΩ 1.0 5.0 2.0 6.0 mV
RS ≤ 50Ω 0.8 3.0 mV
TAMIN ≤ TA ≤ TAMAX
RS ≤ 50Ω 4.0 mV
RS ≤ 10 kΩ 6.0 7.5 mV
Average Input Offset 15 µV/˚C
Voltage Drift
Input Offset Voltage TA = 25˚C, VS = ± 20V ± 10 ± 15 ± 15 mV
Adjustment Range
Input Offset Current TA = 25˚C 3.0 30 20 200 20 200 nA
TAMIN ≤ TA ≤ TAMAX 70 85 500 300 nA
Average Input Offset 0.5 nA/˚C
Current Drift
Input Bias Current TA = 25˚C 30 80 80 500 80 500 nA
TAMIN ≤ TA ≤ TAMAX 0.210 1.5 0.8 µA
Input Resistance TA = 25˚C, VS = ± 20V 1.0 6.0 0.3 2.0 0.3 2.0 MΩ
TAMIN ≤ TA ≤ TAMAX, 0.5 MΩ
VS = ± 20V
Input Voltage Range TA = 25˚C ± 12 ± 13 V
TAMIN ≤ TA ≤ TAMAX ± 12 ± 13 V
www.national.com 2
LM741
Electrical Characteristics (Note 5) (Continued)
Parameter Conditions LM741A LM741 LM741C Units

Min Typ Max Min Typ Max Min Typ Max
Large Signal Voltage Gain TA = 25˚C, RL ≥ 2 kΩ
VS = ± 20V, VO = ± 15V 50 V/mV
VS = ± 15V, VO = ± 10V 50 200 20 200 V/mV
TAMIN ≤ TA ≤ TAMAX,
RL ≥ 2 kΩ,
VS = ± 20V, VO = ± 15V 32 V/mV
VS = ± 15V, VO = ± 10V 25 15 V/mV
VS = ± 5V, VO = ± 2V 10 V/mV
Output Voltage Swing VS = ± 20V
RL ≥ 10 kΩ ± 16 V
RL ≥ 2 kΩ ± 15 V
VS = ± 15V
RL ≥ 10 kΩ ± 12 ± 14 ± 12 ± 14 V
RL ≥ 2 kΩ ± 10 ± 13 ± 10 ± 13 V
Output Short Circuit TA = 25˚C 10 25 35 25 25 mA
Current TAMIN ≤ TA ≤ TAMAX 10 40 mA
Common-Mode TAMIN ≤ TA ≤ TAMAX
Rejection Ratio RS ≤ 10 kΩ, VCM = ± 12V 70 90 70 90 dB
RS ≤ 50Ω, VCM = ± 12V 80 95 dB
Supply Voltage Rejection TAMIN ≤ TA ≤ TAMAX,
Ratio VS = ± 20V to VS = ± 5V
RS ≤ 50Ω 86 96 dB
RS ≤ 10 kΩ 77 96 77 96 dB
Transient Response TA = 25˚C, Unity Gain
Rise Time 0.25 0.8 0.3 0.3 µs
Overshoot 6.0 20 5 5 %
Bandwidth (Note 6) TA = 25˚C 0.437 1.5 MHz
Slew Rate TA = 25˚C, Unity Gain 0.3 0.7 0.5 0.5 V/µs
Supply Current TA = 25˚C 1.7 2.8 1.7 2.8 mA
Power Consumption TA = 25˚C
VS = ± 20V 80 150 mW
VS = ± 15V 50 85 50 85 mW
LM741A VS = ± 20V
TA = TAMIN 165 mW
TA = TAMAX 135 mW
LM741 VS = ± 15V
TA = TAMIN 60 100 mW
TA = TAMAX 45 75 mW
Note 2: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
3 www.national.com
LM741
Electrical Characteristics (Note 5) (Continued)
Note 3: For operation at elevated temperatures, these devices must be derated based on thermal resistance, and Tj max. (listed under “Absolute Maximum Rat-
ings”). Tj = TA + (θjA PD).
Thermal Resistance Cerdip (J) DIP (N) HO8 (H) SO-8 (M)
θjA (Junction to Ambient) 100˚C/W 100˚C/W 170˚C/W 195˚C/W
θjC (Junction to Case) N/A N/A 25˚C/W N/A
Note 4: For supply voltages less than ± 15V, the absolute maximum input voltage is equal to the supply voltage.
Note 5: Unless otherwise specified, these specifications apply for VS = ± 15V, −55˚C ≤ TA ≤ +125˚C (LM741/LM741A). For the LM741C/LM741E, these specifica-
tions are limited to 0˚C ≤ TA ≤ +70˚C.
Note 6: Calculated value from: BW (MHz) = 0.35/Rise Time(µs).
Note 7: For military specifications see RETS741X for LM741 and RETS741AX for LM741A.
Note 8: Human body model, 1.5 kΩ in series with 100 pF.
Schematic Diagram
DS009341-1
www.national.com 4
LM741
Physical Dimensions inches (millimeters) unless otherwise noted
Metal Can Package (H)

Order Number LM741H, LM741H/883, LM741AH/883, LM741AH-MIL or LM741CH
NS Package Number H08C
Ceramic Dual-In-Line Package (J)

Order Number LM741J/883
NS Package Number J08A
5 www.national.com
LM741
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
Dual-In-Line Package (N)

Order Number LM741CN
NS Package Number N08E
10-Lead Ceramic Flatpak (W)

Order Number LM741W/883, LM741WG-MPR or LM741WG/883
NS Package Number W10A
www.national.com 6
Philips Semiconductors Product specification
PNP general purpose transistors BC556; BC557
FEATURES PINNING
• Low current (max. 100 mA) PIN DESCRIPTION
• Low voltage (max. 65 V). 1 emitter
2 base
APPLICATIONS 3 collector
• General purpose switching and amplification.
DESCRIPTION handbook, halfpage1 3

2
PNP transistor in a TO-92; SOT54 plastic package. 3
NPN complements: BC546 and BC547. 2
1
MAM281
Fig.1 Simplified outline (TO-92; SOT54)

and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BC556 − −80 V
BC557 − −50 V
VCEO collector-emitter voltage open base
BC556 − −65 V
BC557 − −45 V
VEBO emitter-base voltage open collector − −5 V
IC collector current (DC) − −100 mA
ICM peak collector current − −200 mA
IBM peak base current − −200 mA
Ptot total power dissipation Tamb ≤ 25 °C − 500 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C
1999 Apr 15 2
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 250 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = −30 V − −1 −15 nA
IE = 0; VCB = −30 V; Tj = 150 °C − − −4 µA
IEBO emitter cut-off current IC = 0; VEB = −5 V − − −100 nA
hFE DC current gain IC = −2 mA; VCE = −5 V;
BC556 see Figs 2, 3 and 4 125 − 475
BC557 125 − 800
BC556A 125 − 250
BC556B; BC557B 220 − 475
BC557C 420 − 800
VCEsat collector-emitter saturation IC = −10 mA; IB = −0.5 mA − −60 −300 mV
voltage IC = −100 mA; IB = −5 mA − −180 −650 mV
VBEsat base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA; note 1 − −750 − mV
IC = −100 mA; IB = −5 mA; note 1 − −930 − mV
VBE base-emitter voltage IC = −2 mA; VCE = −5 V; note 2 −600 −650 −750 mV
IC = −10 mA; VCE = −5 V; note 2 − − −820 mV
Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 3 − pF
Ce emitter capacitance IC = ic = 0; VEB = −0.5 V; f = 1 MHz − 10 − pF
fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − − MHz
F noise figure I C = −200 µA; VCE = −5 V; RS = 2 kΩ; − 2 10 dB
f = 1 kHz; B = 200 Hz
Notes
1. VBEsat decreases by about −1.7 mV/K with increasing temperature.
2. VBE decreases by about −2 mV/K with increasing temperature.
1999 Apr 15 3
MBH726
300
handbook, full pagewidth
hFE
200
VCE = −5 V
100
0
−10−1 −1 −10 −102 IC (mA) −103
BC556A.
Fig.2 DC current gain; typical values.
MBH727
400
hFE
VCE = −5 V
300
200
100
0
−10−2 −10−1 −1 −10 −102 IC (mA) −103
BC556B; BC557B.
1999 Apr 15 4
MBH728
600
hFE
500
VCE = −5 V
400
300
200
100
0
−10−2 −10−1 −1 −10 −102 IC (mA) −103
BC557C.
1999 Apr 15 5
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads SOT54
d A L
1
e1
2
D e
b1
L1
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A b b1 c D d E e e1 L L1(1)
5.2 0.48 0.66 0.45 4.8 1.7 4.2 14.5

mm 2.54 1.27 2.5
5.0 0.40 0.56 0.40 4.4 1.4 3.6 12.7
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION
SOT54 TO-92 SC-43 97-02-28
1999 Apr 15 6
LM555 Timer
February 2000
LM555
Timer
General Description Features
The LM555 is a highly stable device for generating accurate n Direct replacement for SE555/NE555
time delays or oscillation. Additional terminals are provided n Timing from microseconds through hours
for triggering or resetting if desired. In the time delay mode of n Operates in both astable and monostable modes
operation, the time is precisely controlled by one external re- n Adjustable duty cycle
sistor and capacitor. For astable operation as an oscillator, n Output can source or sink 200 mA
the free running frequency and duty cycle are accurately
n Output and supply TTL compatible
controlled with two external resistors and one capacitor. The
circuit may be triggered and reset on falling waveforms, and n Temperature stability better than 0.005% per ˚C
the output circuit can source or sink up to 200mA or drive n Normally on and normally off output
TTL circuits. n Available in 8-pin MSOP package
Applications
n Precision timing
n Pulse generation
n Sequential timing
n Time delay generation
n Pulse width modulation
n Pulse position modulation
n Linear ramp generator
Schematic Diagram
DS007851-1
© 2000 National Semiconductor Corporation DS007851 www.national.com

LM555
Connection Diagram
Dual-In-Line, Small Outline
and Molded Mini Small Outline Packages
DS007851-3
Top View
Ordering Information
Package Part Number Package Marking Media Transport NSC Drawing
8-Pin SOIC LM555CM LM555CM Rails
M08A
LM555CMX LM555CM 2.5k Units Tape and Reel
8-Pin MSOP LM555CMM Z55 1k Units Tape and Reel
MUA08A
LM555CMMX Z55 3.5k Units Tape and Reel
8-Pin MDIP LM555CN LM555CN Rails N08E
www.national.com 2
LM555
Absolute Maximum Ratings (Note 2) Soldering Information
If Military/Aerospace specified devices are required, Dual-In-Line Package
please contact the National Semiconductor Sales Office/ Soldering (10 Seconds) 260˚C
Distributors for availability and specifications. Small Outline Packages
Supply Voltage +18V (SOIC and MSOP)
Power Dissipation (Note 3) Vapor Phase (60 Seconds) 215˚C
LM555CM, LM555CN 1180 mW Infrared (15 Seconds) 220˚C
LM555CMM 613 mW See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
Operating Temperature Ranges surface mount devices.
LM555C 0˚C to +70˚C
Storage Temperature Range −65˚C to +150˚C
Electrical Characteristics (Notes 1, 2)

(TA = 25˚C, VCC = +5V to +15V, unless othewise specified)
Parameter Conditions Limits Units
LM555C
Min Typ Max
Supply Voltage 4.5 16 V
Supply Current VCC = 5V, RL = ∞ 3 6
VCC = 15V, RL = ∞ 10 15 mA
(Low State) (Note 4)
Timing Error, Monostable
Initial Accuracy 1 %
Drift with Temperature RA = 1k to 100kΩ, 50 ppm/˚C
C = 0.1µF, (Note 5)
Accuracy over Temperature 1.5 %
Drift with Supply 0.1 %/V
Timing Error, Astable
Initial Accuracy 2.25 %
Drift with Temperature RA, RB = 1k to 100kΩ, 150 ppm/˚C
C = 0.1µF, (Note 5)
Accuracy over Temperature 3.0 %
Drift with Supply 0.30 %/V
Threshold Voltage 0.667 x VCC
Trigger Voltage VCC = 15V 5 V
VCC = 5V 1.67 V
Trigger Current 0.5 0.9 µA
Reset Voltage 0.4 0.5 1 V
Reset Current 0.1 0.4 mA
Threshold Current (Note 6) 0.1 0.25 µA
Control Voltage Level VCC = 15V 9 10 11
V
VCC = 5V 2.6 3.33 4
Pin 7 Leakage Output High 1 100 nA
Pin 7 Sat (Note 7)
Output Low VCC = 15V, I7 = 15mA 180 mV
Output Low VCC = 4.5V, I7 = 4.5mA 80 200 mV
3 www.national.com
LM555
Electrical Characteristics (Notes 1, 2) (Continued)
(TA = 25˚C, VCC = +5V to +15V, unless othewise specified)

Parameter Conditions Limits Units
LM555C
Min Typ Max
Output Voltage Drop (Low) VCC = 15V
ISINK = 10mA 0.1 0.25 V
ISINK = 50mA 0.4 0.75 V
ISINK = 100mA 2 2.5 V
ISINK = 200mA 2.5 V
VCC = 5V
ISINK = 8mA V
ISINK = 5mA 0.25 0.35 V
Output Voltage Drop (High) ISOURCE = 200mA, VCC = 15V 12.5 V
ISOURCE = 100mA, VCC = 15V 12.75 13.3 V
VCC = 5V 2.75 3.3 V
Rise Time of Output 100 ns
Fall Time of Output 100 ns
Note 1: All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guar-
antee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is
given, however, the typical value is a good indication of device performance.
Note 3: For operating at elevated temperatures the device must be derated above 25˚C based on a +150˚C maximum junction temperature and a thermal resistance
of 106˚C/W (DIP), 170˚C/W (S0-8), and 204˚C/W (MSOP) junction to ambient.
Note 4: Supply current when output high typically 1 mA less at VCC = 5V.
Note 5: Tested at VCC = 5V and VCC = 15V.
Note 6: This will determine the maximum value of RA + RB for 15V operation. The maximum total (RA + RB) is 20MΩ.
Note 7: No protection against excessive pin 7 current is necessary providing the package dissipation rating will not be exceeded.
Note 8: Refer to RETS555X drawing of military LM555H and LM555J versions for specifications.
www.national.com 4
LM555
Typical Performance Characteristics
Minimuim Pulse Width Supply Current vs.
Required for Triggering Supply Voltage
DS007851-4 DS007851-19
High Output Voltage vs. Low Output Voltage vs.

Output Source Current Output Sink Current
DS007851-20 DS007851-21
Low Output Voltage vs. Low Output Voltage vs.

Output Sink Current Output Sink Current
DS007851-22 DS007851-23
5 www.national.com
LM555
Typical Performance Characteristics (Continued)
Output Propagation Delay vs. Output Propagation Delay vs.

Voltage Level of Trigger Pulse Voltage Level of Trigger Pulse
DS007851-24 DS007851-25
Discharge Transistor (Pin 7) Discharge Transistor (Pin 7)

Voltage vs. Sink Current Voltage vs. Sink Current
DS007851-26 DS007851-27
www.national.com 6
LM555
Applications Information
MONOSTABLE OPERATION NOTE: In monostable operation, the trigger should be driven
In this mode of operation, the timer functions as a one-shot high before the end of timing cycle.
(Figure 1). The external capacitor is initially held discharged
by a transistor inside the timer. Upon application of a nega-
tive trigger pulse of less than 1/3 VCC to pin 2, the flip-flop is
set which both releases the short circuit across the capacitor
and drives the output high.
DS007851-7
FIGURE 3. Time Delay
ASTABLE OPERATION
If the circuit is connected as shown in Figure 4 (pins 2 and 6
connected) it will trigger itself and free run as a multivibrator.
DS007851-5 The external capacitor charges through RA + RB and dis-
FIGURE 1. Monostable charges through RB. Thus the duty cycle may be precisely
set by the ratio of these two resistors.
The voltage across the capacitor then increases exponen-
tially for a period of t = 1.1 RA C, at the end of which time the
voltage equals 2/3 VCC. The comparator then resets the
flip-flop which in turn discharges the capacitor and drives the
output to its low state. Figure 2 shows the waveforms gener-
ated in this mode of operation. Since the charge and the
threshold level of the comparator are both directly propor-
tional to supply voltage, the timing internal is independent of
supply.
DS007851-8
FIGURE 4. Astable
DS007851-6 In this mode of operation, the capacitor charges and dis-
VCC = 5V Top Trace: Input 5V/Div. charges between 1/3 VCC and 2/3 VCC. As in the triggered
TIME = 0.1 ms/DIV. Middle Trace: Output 5V/Div. mode, the charge and discharge times, and therefore the fre-
RA = 9.1kΩ Bottom Trace: Capacitor Voltage 2V/Div. quency are independent of the supply voltage.
C = 0.01µF
FIGURE 2. Monostable Waveforms
During the timing cycle when the output is high, the further
application of a trigger pulse will not effect the circuit so long
as the trigger input is returned high at least 10µs before the
end of the timing interval. However the circuit can be reset
during this time by the application of a negative pulse to the
reset terminal (pin 4). The output will then remain in the low
state until a trigger pulse is again applied.
When the reset function is not in use, it is recommended that
it be connected to VCC to avoid any possibility of false trig-
gering.
Figure 3 is a nomograph for easy determination of R, C val-
ues for various time delays.
7 www.national.com
LM555
Applications Information (Continued)
Figure 5 shows the waveforms generated in this mode of

operation.
DS007851-11
VCC = 5V Top Trace: Input 4V/Div.

TIME = 20µs/DIV. Middle Trace: Output 2V/Div.
RA = 9.1kΩ Bottom Trace: Capacitor 2V/Div.
DS007851-9 C = 0.01µF
VCC = 5V Top Trace: Output 5V/Div. FIGURE 7. Frequency Divider

TIME = 20µs/DIV. Bottom Trace: Capacitor Voltage 1V/Div.
RA = 3.9kΩ
RB = 3kΩ PULSE WIDTH MODULATOR
C = 0.01µF When the timer is connected in the monostable mode and
FIGURE 5. Astable Waveforms triggered with a continuous pulse train, the output pulse
width can be modulated by a signal applied to pin 5. Figure
The charge time (output high) is given by: 8 shows the circuit, and in Figure 9 are some waveform
t1 = 0.693 (RA + RB) C examples.
And the discharge time (output low) by:
t2 = 0.693 (RB) C
Thus the total period is:
T = t1 + t2 = 0.693 (RA +2RB) C
The frequency of oscillation is:
Figure 6 may be used for quick determination of these RC

values.
The duty cycle is:
DS007851-12
FIGURE 8. Pulse Width Modulator
DS007851-13
VCC = 5V Top Trace: Modulation 1V/Div.

DS007851-10
TIME = 0.2 ms/DIV. Bottom Trace: Output Voltage 2V/Div.
FIGURE 6. Free Running Frequency RA = 9.1kΩ
C = 0.01µF
FREQUENCY DIVIDER
FIGURE 9. Pulse Width Modulator
The monostable circuit of Figure 1 can be used as a fre-
quency divider by adjusting the length of the timing cycle.
Figure 7 shows the waveforms generated in a divide by three
circuit.
www.national.com 8
LM555
PULSE POSITION MODULATOR

This application uses the timer connected for astable opera-
tion, as in Figure 10, with a modulating signal again applied
to the control voltage terminal. The pulse position varies with
the modulating signal, since the threshold voltage and hence
the time delay is varied. Figure 11 shows the waveforms
generated for a triangle wave modulation signal.
DS007851-16
FIGURE 12.
Figure 13 shows waveforms generated by the linear ramp.

The time interval is given by:
DS007851-14
VBE . 0.6V
FIGURE 10. Pulse Position Modulator
DS007851-17
VCC = 5V Top Trace: Input 3V/Div.

TIME = 20µs/DIV. Middle Trace: Output 5V/Div.
DS007851-15
R1 = 47kΩ Bottom Trace: Capacitor Voltage 1V/Div.
VCC = 5V Top Trace: Modulation Input 1V/Div. R2 = 100kΩ
TIME = 0.1 ms/DIV. Bottom Trace: Output 2V/Div. RE = 2.7 kΩ
RA = 3.9kΩ C = 0.01 µF
RB = 3kΩ
FIGURE 13. Linear Ramp
C = 0.01µF
FIGURE 11. Pulse Position Modulator
LINEAR RAMP
When the pullup resistor, RA, in the monostable circuit is re-
placed by a constant current source, a linear ramp is gener-
ated. Figure 12 shows a circuit configuration that will perform
this function.
9 www.national.com
LM555
50% DUTY CYCLE OSCILLATOR

For a 50% duty cycle, the resistors RA and RB may be con-
nected as in Figure 14. The time period for the output high is
the same as previous, t1 = 0.693 RA C. For the output low it
is t2 =
Thus the frequency of oscillation is
DS007851-18
FIGURE 14. 50% Duty Cycle Oscillator
Note that this circuit will not oscillate if RB is greater than 1/2
RA because the junction of RA and RB cannot bring pin 2
down to 1/3 VCC and trigger the lower comparator.
ADDITIONAL INFORMATION
Adequate power supply bypassing is necessary to protect
associated circuitry. Minimum recommended is 0.1µF in par-
allel with 1µF electrolytic.
Lower comparator storage time can be as long as 10µs
when pin 2 is driven fully to ground for triggering. This limits
the monostable pulse width to 10µs minimum.
Delay time reset to output is 0.47µs typical. Minimum reset
pulse width must be 0.3µs, typical.
Pin 7 current switches within 30ns of the output (pin 3) volt-
age.
www.national.com 10
LM555
Physical Dimensions inches (millimeters) unless otherwise noted
Small Outline Package (M)

NS Package Number M08A
8-Lead (0.118” Wide) Molded Mini Small Outline Package

NS Package Number MUA08A
11 www.national.com
LM555 Timer
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
Molded Dual-In-Line Package (N)

NS Package Number N08E
LIFE SUPPORT POLICY

NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant support device or system whose failure to perform
into the body, or (b) support or sustain life, and can be reasonably expected to cause the failure of
whose failure to perform when properly used in the life support device or system, or to affect its
accordance with instructions for use provided in the safety or effectiveness.
labeling, can be reasonably expected to result in a
significant injury to the user.
National Semiconductor National Semiconductor National Semiconductor National Semiconductor
Corporation Europe Asia Pacific Customer Japan Ltd.
Americas Fax: +49 (0) 180-530 85 86 Response Group Tel: 81-3-5639-7560
Tel: 1-800-272-9959 Email: europe.support@nsc.com Tel: 65-2544466 Fax: 81-3-5639-7507
Fax: 1-800-737-7018 Deutsch Tel: +49 (0) 69 9508 6208 Fax: 65-2504466
Email: support@nsc.com English Tel: +44 (0) 870 24 0 2171 Email: ap.support@nsc.com
www.national.com Français Tel: +33 (0) 1 41 91 8790
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
NPN general purpose transistors BC546; BC547
FEATURES PINNING
• Low current (max. 100 mA) PIN DESCRIPTION
• Low voltage (max. 65 V). 1 emitter
2 base
APPLICATIONS 3 collector
• General purpose switching and amplification.
DESCRIPTION handbook, halfpage1 3

2
NPN transistor in a TO-92; SOT54 plastic package. 3
2
PNP complements: BC556 and BC557.
1
MAM182
Fig.1 Simplified outline (TO-92; SOT54)

and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
VCBO collector-base voltage open emitter
BC546 − 80 V
BC547 − 50 V
VCEO collector-emitter voltage open base
BC546 − 65 V
BC547 − 45 V
VEBO emitter-base voltage open collector
BC546 − 6 V
BC547 − 6 V
IC collector current (DC) − 100 mA
ICM peak collector current − 200 mA
IBM peak base current − 200 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 500 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C
Note
1999 Apr 15 2
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 0.25 K/mW
Note
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

ICBO collector cut-off current IE = 0; VCB = 30 V − − 15 nA
IE = 0; VCB = 30 V; Tj = 150 °C − − 5 µA
IEBO emitter cut-off current IC = 0; VEB = 5 V − − 100 nA
hFE DC current gain IC = 10 µA; VCE = 5 V;
BC546A see Figs 2, 3 and 4 − 90 −
BC546B; BC547B − 150 −
BC547C − 270 −
DC current gain IC = 2 mA; VCE = 5 V;
BC546A see Figs 2, 3 and 4 110 180 220
BC546B; BC547B 200 290 450
BC547C 420 520 800
BC547 110 − 800
BC546 110 − 450
VCEsat collector-emitter saturation IC = 10 mA; IB = 0.5 mA − 90 250 mV
voltage IC = 100 mA; IB = 5 mA − 200 600 mV
VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; note 1 − 700 − mV
IC = 100 mA; IB = 5 mA; note 1 − 900 − mV
VBE base-emitter voltage IC = 2 mA; VCE = 5 V; note 2 580 660 700 mV
IC = 10 mA; VCE = 5 V − − 770 mV
Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 1.5 − pF
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 11 − pF
fT transition frequency IC = 10mA; VCE = 5 V; f = 100 MHz 100 − − MHz
F noise figure I C = 200 µA; VCE = 5 V; − 2 10 dB
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
1999 Apr 15 3
MBH723
250
hFE
200
VCE = 5 V
150
100
50
0
10−2 10−1 1 10 102 IC (mA) 103
BC546A.
MBH724
300
hFE VCE = 5 V
200
100
0
10−2 10−1 1 10 102 IC (mA) 103
BC546B; BC547B.
1999 Apr 15 4
MBH725
600
VCE = 5 V
hFE
400
200
0
10−2 10−1 1 10 102 IC (mA) 103
BC547C.
1999 Apr 15 5
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads SOT54
d A L
1
e1
2
D e
b1
L1
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A b b1 c D d E e e1 L L1(1)
5.2 0.48 0.66 0.45 4.8 1.7 4.2 14.5

mm 2.54 1.27 2.5
5.0 0.40 0.56 0.40 4.4 1.4 3.6 12.7
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION
SOT54 TO-92 SC-43 97-02-28
1999 Apr 15 6
BD135
 BD139
NPN SILICON TRANSISTORS

■ STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD135 and BD139 are silicon epitaxial
planar NPN transistors in Jedec SOT-32 plastic
package, designed for audio amplifiers and
drivers utilizing complementary or quasi
compementary circuits. 1
The complementary PNP types are BD136 and 2
3
BD140 respectively.
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t
BD135 BD139
V CBO Collector-Base Voltage (IE = 0) 45 80 V
V CEO Collector-Emitter Voltage (IB = 0) 45 80 V
V EBO Emitter-Base Voltage (IC = 0) 5 V
IC Collector Current 1.5 A
I CM Collector Peak Current 3 A
IB Base Current 0.5 A
P t ot Total Dissipation at Tc ≤ 25 o C 12.5 W
o
P t ot Total Dissipation at Ta mb ≤ 25 C 1.25 W
o
T stg Storage T emperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
May 1999 1/4

BD135 / BD139
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 10 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CBO Collector Cut-off V CB = 30 V 0.1 µA
o
Current (I E = 0) V CB = 30 V T C = 125 C 10 µA
I EBO Emitter Cut-off Current V EB = 5 V 10 µA
(I C = 0)
V CEO(sus )∗ Collector-Emitter I C = 30 mA
Sustaining Voltage for BD135 45 V
for BD139 80 V
V CE(sat )∗ Collector-Emitter I C = 0.5 A IB = 0.05 A 0.5 V
Saturation Voltage
V BE ∗ Base-Emitt er Voltage I C = 0.5 A VCE = 2 V 1 V
h F E∗ DC Current Gain I C = 5 mA V CE = 2 V 25
I C = 0.5 A VCE = 2 V 25
I C = 150 mA V CE = 2 V 40 250
h FE h FE Groups I C = 150 mA VCE = 2 V
for BD139 group 10 63 160
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
2/4
BD135 / BD139
SOT-32 (TO-126) MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2
c1
0016114
3/4
BD136
BD138/BD140
PNP SILICON TRANSISTORS

■ SGS-THOMSON PREFERRED SALESTYPES
■ PNP TRANSISTOR
DESCRIPTION
The BD136, BD138 and BD140 are silicon
epitaxial planar PNP transistors in Jedec SOT-32
plastic package, designed for audio amplifiers
and drivers utilizing complementary or quasi
compementary circuits. 1
The complementary NPN types are the BD135 2
3
BD137 and BD139.
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t
BD136 BD138 BD140
V CBO Collector-Base Voltage (IE = 0) -45 -60 -80 V
V CEO Collector-Emitter Voltage (I B = 0) -45 -60 -80 V
V EBO Emitter-Base Voltage (I C = 0) -5 V
IC Collector Current -1.5 A
I CM Collector Peak Current -3 A
IB Base Current -0.5 A
o
P t ot Total Dissipation at T c ≤ 25 C 12.5 W
P t ot Total Dissipation at T amb ≤ 25 o C 1.25 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
June 1997 1/4

BD136/BD138/BD140
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 10 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CBO Collector Cut-off V CB = -30 V -0.1 µA
o
Current (IE = 0) V CB = -30 V TC = 125 C -10 µA
I EBO Emitter Cut-off Current V EB = -5 V -10 µA
(I C = 0)
V CEO(sus )∗ Collector-Emitter I C = -30 mA
Sustaining Voltage for BD136 -45 V
for BD138 -60 V
for BD140 -80 V
V CE(sat )∗ Collector-Emitter I C = -0.5 A IB = -0.05 A -0.5 V
Saturation Voltage
V BE ∗ Base-Emitter Voltage I C = -0.5 A V CE = -2 V -1 V
h FE∗ DC Current G ain I C = -5 mA VCE = -2 V 25
I C = -0.5 A V CE = -2 V 25
I C = -150 mA V CE = -2 V 40 250
h FE h FE G roups I C = -150 mA V CE = -2 V
for BD140 group 10 63 160
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Areas
2/4
BD136/BD138/BD140
SOT-32 (TO-126) MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2 2.15 0.084
H2
0016114
3/4
PHOTOTRANSISTOR
Industry Standard
Single Channel
6 Pin DIP Optocoupler
DEVICE TYPES
Dimensions in Inches (mm)
Part No. CTR % Min. Part No. CTR % Min.
4N25 20 MCT2 20 3 2 1
pin one ID
4N26 20 MCT2E 20
Anode 1 6 Base
4N27 10 MCT270 50 .248 (6.30)
.256 (6.50)
4N28 10 MCT271 45–90 Cathode 2 5 Collector
4N35 100 MCT272 75–150 4 5 6
NC 3 4 Emitter
4N36 100 MCT273 125–250
.335 (8.50)
4N37 100 MCT274 225–400 .343 (8.70)
4N38 10 MCT275 70–90 .048 (0.45)
.300 (7.62)
.039 typ.
H11A1 50 MCT276 15–60 (1.00) .022 (0.55)
Min.
H11A2 20 MCT277 100 .130 (3.30)
.150 (3.81)
H11A3 20
4° 18°
H11A4 10 typ. .114 (2.90)
.031 (0.80) min. .130 (3.0)
H11A5 30 3°–9° .010 (.25)
.031 (0.80) typ.
.018 (0.45) .035 (0.90)
FEATURES .022 (0.55) .300–.347
• Interfaces with Common Logic Families .100 (2.54) typ. (7.62–8.81)
• Input-output Coupling Capacitance < 0.5 pF
• Industry Standard Dual-in-line 6-pin Package DESCRIPTION
• Field Effect Stable by TRIOS® This data sheet presents five families of Infineon Industry Standard
• 5300 VRMS Isolation Test Voltage Single Channel Phototransistor Couplers. These families include the
• Underwriters Laboratory File #E52744 4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/
• V VDE #0884 Approval Available with Option 1
D E A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/
277 devices.Each optocoupler consists of Gallium Arsenide infra-
APPLICATIONS red LED and a silicon NPN phototransistor.
• AC Mains Detection
These couplers are Underwriters Laboratories (UL) listed to comply
• Reed Relay Driving
with a 5300 VRMS Isolation Test Voltage. This isolation performance
• Switch Mode Power Supply Feedback is accomplished through Infineon double molding isolation manu-
• Telephone Ring Detection facturing process. Compliance to VDE 0884 partial discharge isola-
• Logic Ground Isolation tion specification is available for these families by ordering option 1.
• Logic Coupling with High Frequency Noise Phototransistor gain stability, in the presence of high isolation volt-
Rejection ages, is insured by incorporating a TRansparent lOn Shield
Notes: (TRIOS)® on the phototransistor substrate. These isolation pro-
Designing with data sheet is covered in Application Note 45. cesses and the Infineon IS09001 Quality program results in the
highest isolation performance available for a commercial plastic
phototransistor optocoupler.
The devices are available in lead formed configuration suitable for
surface mounting and are available either on tape and reel, or in
standard tube shipping containers.
 2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178 1 March 27, 2000-00
Maximum Ratings TA=25°C
Emitter
Reverse Voltage .......................................................................................... 6.0 V
Forward Current ........................................................................................ 60 mA
Surge Current (t≤10 µs)............................................................................... 2.5 A
Power Dissipation................................................................................... 100 mW
Detector
Collector-Emitter Breakdown Voltage........................................................... 70 V
Emitter-Base Breakdown Voltage ................................................................ 7.0 V
Collector Current ....................................................................................... 50 mA
Collector Current(t <1.0 ms).................................................................... 100 mA
Power Dissipation................................................................................... 150 mW
Package
Isolation Test Voltage.......................................................................... 5300 VRMS
Creepage .............................................................................................. ≥7.0 mm
Clearance ............................................................................................. ≥7.0 mm
Isolation Thickness between Emitter and Detector ............................... ≥0.4 mm
Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175
Isolation Resistance
VIO=500 V, TA=25°C...............................................................................1012 Ω
VIO=500 V, TA=100°C............................................................................ 1011 Ω
Storage Temperature................................................................ –55°C to +150°C
Operating Temperature ............................................................ –55°C to +100°C
Junction Temperature................................................................................ 100°C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane ≥1.5 mm) ...................................................... 260°C
4N25/26/27/28—Characteristics TA=25°C
Emitter Symbol Min. Typ. Max. Unit Condition
Forward Voltage* VF — 1.3 1.5 V IF=50 mA
Reverse Current* IR — 0.1 100 µA VR=3.0 V
Capacitance CO — 25 — pF VR=0
Detector
Breakdown Voltage* Collector-Emitter BVCEO 30 — — V IC=1.0 mA
Emitter-Collector BVECO 7.0 — — IE=100 µA
Collector-Base BVCBO 70 — — IC=100 µA
ICEO(dark)* 4N25/26/27 — — 5.0 50 nA VCE=10 V, (base open)
4N28 10 100
ICBO(dark)* — — 2.0 20 nA VCB=10 V, (emitter open)
Capacitance, Collector-Emitter CCE — 6.0 — pF VCE=0
Package
DC Current Transfer Ratio* 4N25/26 CTR 20 50 — % VCE=10 V, IF=10 mA
4N27/28 10 30 —
Isolation Voltage* 4N25 VIO 2500 — — V Peak, 60 Hz
4N26/27 1500 — —
4N28 500 — —
Saturation Voltage, Collector-Emitter VCE(sat) — — 0.5 V ICE=2.0 mA, IF=50 mA
Resistance, Input to Output* RIO 100 — — GΩ VIO=500 V

Coupling Capacitance CIO — 0.5 — pF f=1.0 MHz
Rise and Fall Times tr, tf — 2.0 — µs IF=10 mA

VCE=10 V, RL=100 Ω
* Indicates JEDEC registered values
 2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA Phototransistor, Industry Standard
4N35/36/37/38—Characteristics TA=25°C
Forward Voltage* VF 1.3 1.5 V IF=10 mA
0.9 1.7 IF=10 mA, TA=–55°C
Reverse Current* IR 0.1 10 µA VR=6.0 V
Capacitance CO 25 — pF VR=0, f=1.0 MHz
Detector
Breakdown Voltage, Collector-Emitter* 4N35/36/37 BVCEO 30 — — V IC=1.0 mA
4N38 80 — —
Breakdown Voltage, Emitter-Collector* BVECO 7.0 — — V IE=100 µA
Breakdown Voltage, Collector-Base* 4N35/36/37 BVCBO 70 — — V IC=100 µA, IB=1.0 µA
4N38 80 — — —
Leakage Current, Collector-Emitter* 4N35/36/37 ICEO — 5.0 50 nA VCE=10 V, IF=0
4N38 — — 50 VCE=60 V, IF=0
Leakage Current, Collector-Emitter* 4N35/36/37 ICEO — — 500 µA VCE=30 V, IF=0, TA=100°C
4N38 — 6.0 — VCE=60 V, IF=0, TA=100°C
Package
DC Current Transfer Ratio* 4N35/36/37 CTR 100 — — % VCE=10 V, IF=10 mA,
4N38 20 — — VCE=1.0 V, IF=20 mA
DC Current Transfer Ratio* 4N35/36/37 CTR 40 50 — % VCE=10 V, IF=10 mA,
TA=–55 to 100°C
4N38 — — 30 — —
Resistance, Input to Output* RIO 10 11
— — Ω VIO=500 V
Coupling Capacitance CIO — 0.5 — pF f=1.0 MHz
Switching Time* tON, tOFF — 10 — µs IC=2.0 mA, RL=100 Ω, VCC=10 V
* Indicates JEDEC registered value
H11A1 through H11A5—Characteristics TA=25°C

Forward Voltage H11A1–H11A4 VF — 1.1 1.5 V IF=10 mA
H11A5 — 1.1 1.7
Reverse Current IR — — 10 µA VR=3.0 V
Capacitance C0 — 50 — pF VR=0, f=1.0 MHz
Detector
Breakdown Voltage, Collector-Emitter BVCEO 30 — — V IC=1.0 mA, IF=0 mA
Breakdown Voltage, Emitter-Collector BVECO 7.0 — — V IE=100 µA, IF=0 mA
Breakdown Voltage, Collector-Base BVCBO 70 — — V IC=10 µA, IF=0 mA
Leakage Current, Collector-Emitter ICEO — 5.0 50 nA VCE=10 V, IF=0 mA
Package
DC Current Transfer Ratio H11A1 CTR 50 — — % VCE=10 V, IF=10 mA
H11A2/3 20 — —
H11A4 10 — —
H11A5 30 — —
Saturation Voltage, Collector-Emitter VCEsat — — 0.4 V ICE=0.5 mA, IF=10 mA
Capacitance, Input to Output CIO — 0.5 — pF —
Switching Time tON, tOFF — 3.0 — µs IC=2.0 mA, RL=100 Ω, VCE=10 V
MCT2/MCT2E—Characteristics TA=25°C
Forward Voltage VF — 1.1 1.5 V IF=20 mA
Capacitance CO — 25 — pF VR=0, f=1.0 MHz
Detector
Breakdown Voltage Collector-Emitter BVCEO 30 — — V IC=1.0 mA, IF=0 mA
Emitter-Collector BVECO 7.0 — — IE=100 µA, IF=0 mA
Collector-Base BVCBO 70 — — IC=10 µA, IF=0 mA
Leakage Current Collector-Emitter ICBO — 5.0 50 nA VCE=10 V, IF=0
Collector-Base ICBO — — 20 —
Capacitance, Collector-Emitter — CCE — 10 — pF VCE=0
Package
DC Current Transfer Ratio CTR 20 60 — % VCE=10 V, IF=10 mA
Capacitance, Input to Output C IO — 0.5 — pF —
Resistance, Input to Output RIO — 100 — GΩ —
Switching Time tON, tOFF — 3.0 — µs IC=2.0 mA, RL=100 Ω, VCE=10 V
MCT270 through MCT277—Characteristics TA=25°C

Forward Voltage VF — — 1.5 V IF=20 mA
Capacitance CO — 25 — pF VR=0, f=1.0 MHz
Detector
Breakdown Voltage Collector-Emitter BVCEO 30 — — V IC=10 µA, IF=0 mA
Emitter-Collector BVECO 7.0 — — IE=10 µA, IF=0 mA
Collector-Base BVCBO 70 — — — IC=10 µA, IF=0 mA
Leakage Current, Collector-Emitter ICEO — — 50 nA VCE=10 V, IF=0 mA
Package
DC Current Transfer Ratio MCT270 CTR 50 — — % VCE=10 V, IF=10 mA
MCT271 45 — 90
MCT272 75 — 150
MCT273 125 — 250
MCT274 225 — 400
MCT275 70 — 210
MCT276 15 — 60
MCT277 100 — —
Current Transfer Ratio, Collector–Emitter MCT271–276 CTRCE 12.5 — — % VCE=0.4 V, IF=16 mA
MCT277 40 — — —
Collector–Emitter Saturation Voltage VCEsat — — 0.4 V ICE=2.0 mA, IF=16 mA
Capacitance, Input to Output CIO — 0.5 — pF —
Resistance, Input to Output RIO — 1012 — Ω VIO=500 VDC
Switching Time MCT270/272 tON, tOFF — — 10 µs IC=2.0 mA,
MCT271 — — 7.0 RL=100 Ω,
VCE=5.0 V
MCT273 — — 20
MCT274 — — 25
MCT275/277 — — 15
MCT276 — — 3.5
Figure 9. Forward Voltage vs. Forward Current Figure 12. Normalized Non-saturated and Saturated
CTR, TA=70°C vs. LED Current
1.4 1.5
Normalized to:
1.3 Vce=10 V, IF=10 mA, TA=25°C
NCTR - Normalized CTR

VF - Forward Voltage - V
TA = –55°C
CTRce(sat) Vce=0.4 V
1.2
1.0
TA = 25°C
1.1 TA=70°C
1.0
0.5
0.9 TA = 85°C
NCTR(SAT)
0.8 NCTR
0.7 0.0
.1 1 10 100 .1 1 10 100
IF - Forward Current - mA IF - LED Current - mA
Figure 10. Normalized Non-saturated and Saturated Figure 13. Normalized Non-saturated and Saturated
CTR, TA=25°C vs. LED Current CTR, TA=85°C vs. LED Current
1.5
Normalized to: 1.5
Normalized to:
Vce=10 V, IF=10 mA, TA=25°C
Vce=10 V, IF=10 mA, TA=25°C

NCTR - Normlized CTR
CTRce(sat) Vce = 0.4 V
1.0 1.0
TA=25°C TA=85°C
0.5 0.5
NCTR(SAT)
NCTR(SAT)
NCTR
NCTR
0.0 0.0
0 1 10 100 .1 1 10 100
IF - LED Current - mA IF - LED Current - mA
Figure 11. Normalized Non-saturated and Saturated Figure 14. Collector-emitter Current vs. Temperature
CTR, TA=50°C vs. LED Current and LED Current
1.5 35
Normalized to:
Ice - Collector Current - mA
Vce=10 V, IF=10 mA, TA=25°C 30

25
1.0 50°C
TA=50°C 20
70°C
15
25°C 85°C
0.5 10
NCTR(SAT)
5
NCTR
0.0 0
.1 1 10 100 0 10 20 30 40 50 60
IF - LED Current - mA IF - LED Current - mA
Figure 15. Collector-emitter Leakage Current vs. Temp. Figure 18. Normalized Non-saturated HFE vs. Base
5 Current and Temperature
10
1.2
Iceo - Collector-Emitter - nA
4 70°C
10
50°C
NHFE - Normalized HFE

3
10 1.0
25°C
2
10
–20°C
1 Vce = 10 V 0.8
10
Typical Normalized to:
10 0 Ib=20 µA, Vce=10 V, TA=25°C
0.6
10 –1
10 –2
–20 0 20 40 60 80 100 0.4
1 10 100 1000
TA - Ambient Temperature - °C Ib - Base Current - µA
Figure 16. Normalized CTRcb vs. LED Current and Temp. Figure 19. Normalized HFE vs. Base Current and Temp.
1.5 1.5
NCTRcb - Normalized CTRcb
Normalized to: Normalized to:
NHFE(sat) - Normalized
Vcb=9.3 V, IF=10 mA, TA=25°C Vce=10 V, Ib=20 µA
70°C 50°C TA=25°C
1.0 1.0
Saturated HFE
25°C
–20°C
0.5 0.5
25°C
50°C Vce=0.4 V
70°C
0.0 0.0
.1 1 10 100 1 10 100 1000
IF - LED Current - mA Ib - Base Current - µA
Figure 17. Normalized Photocurrent vs. IF and Temp. Figure 20. Propagation Delay vs. Collector Load Resistor
10 1000 2.5
Normalized to: tPLH - Propagation Delay - µs IF=10 mA, TA=25°C
tPHL - Propagation Delay - µs

IF=10 mA, TA=25°C VCC=5.0 V, Vth=1.5 V
Normalized Photocurrent
tPHL
1 100 2.0
0.1 10 1.5
Nib, TA=–20°C
Nib, TA=25°C tPLH
Nib, TA= 50°C
Nib, TA=70°C
0.01 1 1.0
.1 1 10 100 .1 1 10 100
IF - LED Current - mA RL - Collector Load Resistor - kΩ
Figure 21. Switching Timing Figure 22. Switching Schematic
IF VCC = 5.0 V
F=10 KHz, RL
DF=50%
tD
VO tR VO
tPLH
IF =10 mA
VTH=1.5 V
tPHL tS tF
Triacs BT137 series
GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. MAX. UNIT
intended for use in applications requiring
high bidirectional transient and blocking BT137- 600 800
voltage capability and high thermal BT137- 600F
cycling performance. Typical BT137- 600G
applications include motor control, VDRM Repetitive peak off-state 600 800 V
industrial and domestic lighting, heating voltages
and static switching. IT(RMS) RMS on-state current 8 8 A
ITSM Non-repetitive peak on-state 65 65 A
current
PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION
tab
1 main terminal 1
T2 T1
2 main terminal 2
3 gate
1 23 G
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
-600 -800
VDRM Repetitive peak off-state - 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 102 ˚C - 8 A
ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 65 A
t = 16.7 ms - 71 A
2 2
It I t for fusing t = 10 ms - 21 A2s
dIT/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
Tj Operating junction - 125 ˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
June 2001 1 Rev 1.400

Triacs BT137 series
THERMAL RESISTANCES
Rth j-mb Thermal resistance full cycle - - 2.0 K/W
junction to mounting base half cycle - - 2.4 K/W
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
BT137- ... ...F ...G
IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 5 35 25 50 mA
T2+ G- - 8 35 25 50 mA
T2- G- - 11 35 25 50 mA
T2- G+ - 30 70 70 100 mA
IL Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 7 30 30 45 mA
T2+ G- - 16 45 45 60 mA
T2- G- - 5 30 30 45 mA
T2- G+ - 7 45 45 60 mA
IH Holding current VD = 12 V; IGT = 0.1 A - 5 20 20 40 mA
VT On-state voltage IT = 10 A - 1.3 1.65 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
ID Off-state leakage current VD = VDRM(max); - 0.1 0.5 mA
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
BT137- ... ...F ...G
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); 100 50 200 250 - V/µs
off-state voltage Tj = 125 ˚C; exponential
waveform; gate open
circuit
dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 20 - V/ µs
commutating voltage IT(RMS) = 8 A;
dIcom/dt = 3.6 A/ms; gate
open circuit
tgt Gate controlled turn-on ITM = 12 A; VD = VDRM(max); - - - 2 - µs
time IG = 0.1 A; dIG/dt = 5 A/µs
June 2001 2 Rev 1.400

Triacs BT137 series
Ptot / W Tmb(max) / C IT(RMS) / A BT137

12 101 10
= 180
120 105 102 C
10
8
1
90
8 109
60
6
30 113
6
4
4 117
2 121 2
0 125 0
0 2 4 6 8 10 -50 0 50 100 150
IT(RMS) / A Tmb / C
Fig.1. Maximum on-state dissipation, Ptot, versus rms Fig.4. Maximum permissible rms current IT(RMS) ,
on-state current, IT(RMS), where α = conduction angle. versus mounting base temperature Tmb.
ITSM / A IT(RMS) / A
1000 I TSM 25
IT
time 20
Tj initial = 25 C max
15
100
dI T /dt limit
10
T2- G+ quadrant
5
10 0
10us 100us 1ms 10ms 100ms 0.01 0.1 1 10
T/s surge duration / s
Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state
on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal
sinusoidal currents, tp ≤ 20ms. currents, f = 50 Hz; Tmb ≤ 102˚C.
ITSM / A VGT(Tj)
80
VGT(25 C)
1.6
IT ITSM
70
T time 1.4
60
50 Tj initial = 25 C max
1.2
40
1
30
0.8
20
0.6
10
0 0.4
1 10 100 1000 -50 0 50 100 150
Number of cycles at 50Hz Tj / C
Fig.3. Maximum permissible non-repetitive peak Fig.6. Normalised gate trigger voltage
on-state current ITSM, versus number of cycles, for VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
sinusoidal currents, f = 50 Hz.
June 2001 3 Rev 1.400

Triacs BT137 series
IGT(Tj) IT / A
25
IGT(25 C) Tj = 125 C
3
T2+ G+ Tj = 25 C
typ max
T2+ G- 20
2.5 Vo = 1.264 V
T2- G- Rs = 0.0378 Ohms
T2- G+
2 15
1.5
10
1
5
0.5
0 0
-50 0 50 100 150 0 0.5 1 1.5 2 2.5 3
Tj / C VT / V
Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic.
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj) Zth j-mb (K/W)

10
IL(25 C)
3
2.5 unidirectional
1 bidirectional
2
1.5
0.1 P tp
D
1
t
0.5
0.01
0 10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 150
Tj / C tp / s
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-mb, versus
versus junction temperature Tj. pulse width tp.
IH(Tj) dV/dt (V/us)

1000
IH(25C)
3
off-state dV/dt limit
BT137...G SERIES
2.5
BT137 SERIES
100
2 BT137...F SERIES
1.5 dIcom/dt =
10 A/ms 7.9 6.1 4.7 3.6 2.8
1 10
0.5
0 1
-50 0 50 100 150 0 50 100 150
Tj / C Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical commutation dV/dt versus junction
versus junction temperature Tj. temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.
June 2001 4 Rev 1.400

Triacs BT137 series
MECHANICAL DATA
Dimensions in mm
4,5
Net Mass: 2 g max
10,3
max
1,3
3,7
2,8 5,9
min
15,8
max
3,0 max
3,0
not tinned
13,5
min
1,3
max 1 2 3
(2x) 0,9 max (3x)
0,6
2,54 2,54 2,4
Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
June 2001 5 Rev 1.400

U217B/ U217B-FP
Zero Voltage Switch with Adjustable Ramp
Description
The integrated circuit, U217B, is designed as a zero- by period group control, whereas full wave logic
voltage switch in bipolar technology. It is used to control guarantees that full mains cycles are used for load
resistive loads at mains by a triac in zero-crossing mode. switching.
A ramp generator allows to realize power control function
Features Applications
D Direct supply from the mains D Full wave power control
D Current consumption ≤ 0.5 mA
D Temperature regulation
D Very few external components
D Full wave drive – no dc current component in the load
D Power blinking switch
circuit
D Negative output current pulse typ. 100 mA – Package: DIP8, SO8
short circuit protected
D Simple power control
D Ramp generator
D Reference voltage
Block Diagram
95 10872
D1 BYT86/800 L
220 kW R2 18 kW/ Load

R1
(250 V~) (Rsync) 2W 1000 W
C2 R4 C1
2 8 5
100 kW 100 mF/ VM =
2.2 mF/ 1 7 16 V
Ramp 230 V~
10 V Synchronization Supply
generator TIC
GND 236N MT2
R5
15 kW 3
+ 6 100 W MT1
max 4 + Full wave logic
– Comparator Pulse R3 G
100 kW amplifier
min Reference voltage
R6 1.25 V
58 kW
N
Figure 1. Block diagram with typical circuit, period group control 0 to 100%
TELEFUNKEN Semiconductors 1 (11)

Rev. A1, 24-May-96
U217B/ U217B-FP
General Description Firing Pulse Width tp, (Figure 4)
The integrated circuit, U217B, is a triac controller for the This depends on the latching current of the triac and its
zero crossing mode. It is meant to control power in load current. The firing pulse width is determined by the
switching resistive loads of mains supply. zero crossing identification which can be influenced with
the help of sync. resistance, Rsync, (figure 6).
Information regarding supply sync. is provided at Pin 8
via resistor RSync. 2 IL VM
To avoid dc load on the mains, full wave logic guarantees
tp =
w
arc. sin
P 2 Ǹ
that complete mains cycles are used for load switching.
whereas
A fire pulse is released when the inverted input of the IL = Latching current of the triac
comparator is negative (Pin 4) with respect to the non– VM = Mains supply, effective
inverted input (Pin 3) and internal reference voltage. P = Power load (user’s power)
A ramp generator with free selectable duration is possible Total current consumption is influenced by the firing
with capacitor C2 at Pin 2 which provides not only pulse width, which can be calculated as follows:
symmetrical pulse burst control (figure 3), but also
Ǹ w
+
tp
control with superimposed proportional band (figure 10).
Ramp voltage available at capacitor C2 is decoupled R sync
V M 2 sin (
3.5
2 )–0.6 V
10–5 A
–49 k W
across emitter follower at Pin l. To maintain the lamp
flicker specification, ramp duration is adjusted according
10.00
to the controlling load. In practice, interference should be
Vmains = 230 V∼
avoided (temperature control). Therefore in such cases a
two point control is preferred to proportional control. One
can use internal reference voltage for simple applications. 1.00
In that case Pin 3 is inactive and connected to Pin 7
t p ( ms )
(GND), figure 9.
95 11306
IL ( mA)
0.10
200
100
50
0.01
Ramp 10 100 1000 10000
1 control 96 11939 P(W)
Figure 4.
2 C2
–V S 2000
1600
Figure 2. Pin 1 internal network
VM=230V AC
Tamb=25°C
W)
1200
t
RSync ( k
V1
Final voltage 800
1.4 V
Vmin
400
7.3 V Initial voltage

0
T Vmax
0 300 600 900 1200 1500
–V S(Pin5) 95 11307 95 9978 m
tp ( s )
Figure 3. Figure 5.
2 (11) TELEFUNKEN Semiconductors

Rev. A1, 24-May-96
U217B/ U217B-FP
Triac Firing Current (Pulse) Supply Voltage
The integrated circuit U217B (which also contains
This depends on the triac requirement. It can be limited internal voltage limiting) can be connected via the diode
with gate series resistance which is calculated as follows: (D1) and the resistor (R1) with the mains supply. An
internal climb circuit limits the voltage between Pin 5 and
7 to a typical value of 9.25 V.
Series resistance R1 can be calculated (figures 7 and 8) as
RGmax 7.5 V – V Gmax – 36
IGmax
W follows:
Vmin – VSmax (VM – VS)2
R1max = 0.85 ; P(R1) =
2 Itot 2 R1
IGmax
IP = tp
T Itot = IS + IP + Ix
whereas
whereas: VM = Mains voltage
VG = Gate voltage VS = Limiting voltage of the IC
IGmax = Max. gate current Itot = Total current consumption
Ip = Average gate current IS = Current requirement of the IC (without load)
tp = Firing pulse width Ix = Current requirement of other peripheral
T = Mains period duration components
P(R1) = Power dissipation at R1
50 6
5
VMains=230V X
40
VMains=230V X 4
R1 ( k )
PR1 ( W )
30
W
20
2
10 1
0 0
0 3 6 9 12 15 0 3 6 9 12 15
95 10114 Itot ( mA ) 95 10116 Itot ( mA )
Figure 6. Figure 7.

Rev. A1, 24-May-96
U217B/ U217B-FP
Absolute Maximum Ratings
Reference point Pin 7
Parameters Symbol Value Unit
Supply current Pin 5 –I S 30 mA
Sync. current Pin 8 ISync. 5 mA
Output current ramp generator Pin 1 IO 3 mA
Input voltages Pin 1, 3, 4, 6 –V I ≤VS V
Pin 2 –V I 2 to VS
Pin 8 ±VI ≤ 7.3
Power dissipation
°
Tamb = 45°C Ptot 400 mW
Tamb = 100°C 125
Junction temperature Tj 125 °C
Operating-ambient temperature range Tamb 0 to 100 °C
Storage temperature range Tstg –40 to + 125 °C
Thermal Resistance
Parameters Symbol Maximum Unit
Junction ambient RthJA 200 K/W
Electrical Characteristics
–V S = 8.5 V, Tamb = 25°C, reference point Pin 7, unless otherwise specified
Parameters Test Conditions / Pin Symbol Min Typ Max Unit
Supply voltage limitation –I S = 5 mA Pin 5 –V S 8.6 9.25 9.9 V
Supply current Pin 5 –I S 500 mA
Voltage limitation I8 = ± 1 mA Pin 8 ± VI 7.5 8.7 V
Synchronous current Pin 8 ±Isync 0.12 mA
Zero detector ±Isync 35 mA
Output pulse width VM= 230 V ,
Rsync = 220 k W tP 260 ms
Rsync = 470 k W 460
Output pulse current V6 = 0 V Pin 6 –I O 100 mA
Comparator
Input offset voltage Pin 3,4 VI0 5 15 mV
Input bias current Pin 4 IIB 1 mA
Common mode input Pin 3,4 –V IC 1 (VS–1) V
voltage
Threshold internal V3 = 0 V Pin 4 –V T 1.25 V
reference
Ramp generator, Pin 1, figure 1
Period –I S= 1 mA, Isync =1 mA,
m
C1 = 100 F, C2 = 1 F, m
R4= 100 k W T 1.5 s
Final voltage V1 0.9 1.40 1.80 V
Initial voltage 6.8 7.3 7.8
Charge current V2 = 0 V, I8 = –1 mA Pin 2 –I 2 13 17 26 mA

Rev. A1, 24-May-96
U217B/ U217B-FP
Applications
L
RL
Load 270 k W
BYT86/800
VM = 230 V ~
56 W 18 k W
1.5 W
N VDR
+5 V
8 7 6 5
CNY21
U217B
1 2 3 4
56 k W
m
47 F/
II 1.5 mA
10 V 39 k W
VI
95 11308
Figure 8. Power switch
95 11309
D1 BYT86/800 L
m
2.2 F/ C2
10 V 220 kW R2
R1
W
18 k / Load
(250 V~) (Rsync) 2W 1000 W
R8
R4
470 k W 100 k W 2 8 5 C1
BC237 VM =
1 Ramp 7 230 V~
Synchronization Supply
NTC/M87 generator
R(25) R6 1)
B value =
3988 100 k W 100 k W R5
3
+ 6 100 W
4 + Full wave logic
R9 – Pulse R3
Comparator
150 W amplifier
Reference voltage
Rp R7 1.25 V
220 k W 130 k W
N
Figure 9. Temperature control 15 to 35°C with sensor monitoring

NTC–Sensor M 87 Fabr. Siemens
W
R(25) =100 k /B =3988 ⇒ R(15) = 159 k W R51) determines the proportional range
R(35) = 64.5 k W

Rev. A1, 24-May-96
U217B/ U217B-FP
L
0.5 ...
2.2 kW 270 k W BYT86/800
VM= 230 V ~ 100 nF/

250 V ~ W
18 k /
1.5 W
82 W 56 W
N
8 7 6 5
U217B
1 2 3 4
150 k W 110 k W
47 mF/ 16V 0.47 mF/

10 V
95 11310
Figure 10. Power blinking switch with f 2.7 Hz, duty cycle 1:1, power range 0.5 to 2.2 kW

Rev. A1, 24-May-96
U217B/ U217B-FP
L – DT
BYT86/800 1N4148
0.35 ... R1
R4
Load 1.5 kW 510 kW 680 kW
VM = 230 V ~ R5
680 kW
R2
R3 13 kW/2 W
IH = 50 mA 62 W
N
1N4148
R16
8 7 6 5
220 k W
R6
U217B 9.1 k W
R7
1 2 3 4 12 k W
R10 R15
W
910 k
C3
25 k W
R9 10 nF C1
NTC
12 k W W
33 k
2.2 mF
R8
C5 100 mF/ C4 C2
12 V 47 mF 56 k W 1 mF
95 11311
Figure 11. Room temperature control with definite reduction (remote control) for a temperature range 5 to 30°C

Rev. A1, 24-May-96
U217B/ U217B-FP
L
Load/ 1000 W 220 kW BYT51G
VM = 230 V ~
18 kW
1.5 W
VDR
56 W
N
8 7 6 5
220 kW
(680 kW)
U217B
500 kW
1 2 3 4 (2 MW)
10 nF 50 kW
68 mF/ (200 kW)
NTC
10 V
95 11312
Figure 12. Two–point temperature control for a temperature range 15 to 30 °C

Rev. A1, 24-May-96
U217B/ U217B-FP
L
D1
Rsync BYT51G
Load/400 W
430 k W
VM = 230 V~
R1 W
18 k /
1.5 W
92 W
N
R3
8 7 6 5
NTC
200 k W
U217B
D2
1N4148
1 2 3 4
R6
R15/ 50 k W
27 k W
330 k W
R5
R4/ 39 k W
R7/ 8.2 k W C2
150 nF
C3 C1
33 F/m 68 mF/
10 V 10 V
95 11313
Figure 13. Two-point temperature control for a temperature range 18 to 32°C and hysteresis of ± 0.5°C at 25°C

Rev. A1, 24-May-96
U217B/ U217B-FP
Dimension in mm
Package: DIP8
94 8873
Package: SO8
94 8862

Rev. A1, 24-May-96
VALORES DE RESISTENCIA ESTÁNDAR
E6 E12 E24 E48 E96 E192 E6 E12 E24 E48 E96 E192 E6 E12 E24 E48 E96 E192
100 100 100 100 100 100 215 215 215 464 464 464
101 220 220 220 218 470 470 470 470
102 102 221 221 475 475
104 223 481
105 105 105 226 226 226 187 187 187
106 229 193
107 107 232 232 499 499
109 234 505
110 110 110 110 237 237 237 510 511 511 511
111 240 240 517
113 113 244 244 523 523
114 246 530
115 115 115 249 249 249 536 536 536
117 252 542
118 118 255 255 549 549
120 120 120 258 556
121 121 121 261 261 261 560 560 562 562 562
123 264 569
124 124 267 267 576 576
126 270 270 271 583
127 127 127 274 274 274 590 590 590
129 277 597
130 130 130 280 280 604 604
132 284 612
133 133 133 287 287 287 620 619 619 619
135 291 626
137 137 294 294 634 634
138 298 642
140 140 140 300 301 301 301 649 649 649
142 305 657
143 143 309 309 665 665
145 312 673
147 147 147 316 316 316 680 680 680 681 681 681
149 320 690
150 150 150 150 150 324 324 698 698
152 330 330 330 328 706
154 154 154 332 332 332 715 715 715
156 336 723
158 158 340 340 732 732
160 160 344 741
162 162 162 348 348 348 750 750 750 750
164 352 759
165 165 357 357 768 768
167 360 361 777
169 169 169 365 365 365 787 787 787
172 370 796
174 174 374 374 806 806
176 379 820 820 816
178 178 178 383 383 383 825 825 825
180 180 180 390 390 388 835
182 182 392 392 845 845
184 397 856
187 187 187 402 402 402 866 866 866
189 407 876
191 191 412 412 887 887
193 417 898
196 196 196 422 422 422 910 909 909 909
198 430 427 920
200 200 200 432 432 931 931
203 437 942
205 205 205 442 442 442 953 953 953
208 448 965
210 210 453 453 976 976
213 458 988
4 bandas
5 bandas 6 bandas
COLORES 1ª BANDA 2ª BANDA 3ª BANDA x10n TOLERANCIA TCR

negro 0 0 0 0 0,01% 200 ppm
marrón 1 1 1 1 1% 100 ppm
rojo 2 2 2 2 2% 50 ppm
naranja 3 3 3 3 15 ppm
amarillo 4 4 4 4 25 ppm
vrede 5 5 5 5 0,50%
azul 6 6 6 6 0,25%
violeta 7 7 7 7 0,10%
gris 8 8 8 8 0,05%
blanco 9 9 9 9
dorado 5,00%
plateado 0,10%

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SISTEMA PARA EL CONTROL DE

Prácticas de Sistemas Electrónicos

2 DESCRIPCIÓN Y ESPECIFICACIONES GENERALES DEL SISTEMA...............................2

3.1 REQUISITOS FUNCIONALES..............................................................................................................4

4.1 REQUISITOS FUNCIONALES..............................................................................................................8

5 MÓDULO ACTUADOR ................................................................................................................12

5.1 REQUISITOS FUNCIONALES............................................................................................................12

6 DOCUMENTACIÓN A ENTREGAR CON EL PROYECTO DE CADA MÓDULO ............15

7 ANEXO. ESQUEMÁTICOS .........................................................................................................16

8 ANEXO. HOJAS DE CARACTERÍSTICAS DE LOS COMPONENTES ...............................16

Este documento contiene la información necesaria para poder diseñar un

El diseño del sistema propuesto forma parte de la formación práctica de los

Con su desarrollo, se pretende integrar dentro de un sistema completo, un

Para la realización d la práctica, se han configurado grupos de 15 alumnos,

2 Descripción y especificaciones generales del Sistema

El propósito del sistema es el de mantener la temperatura del agua contenida

Como transductor de la temperatura del agua se utiliza una termorresistencia

Como elemento calefactor del agua se utiliza una resistencia de 230Vca de

El sistema completo está integrado por los siguientes módulos:

El módulo sensor-acondicionador suministra una señal proporcional al error

El módulo de alarma proporciona una señal óptica y otra acústica cuando la

El módulo actuador conecta y desconecta la resistencia calefactora para

- 230Vca, 50 Hz para la resistencia calefactora.

- Rango 89ºC – 91ºC para el agua del recipiente.

- 85ºC<=t<095ºC para la alarma. Fuera de este rango se suministrará señal

La construcción de estos circuitos se realizará sobre placas de inserción de

Sobre cada placa se dispondrán puntos de test accesibles.

Todas las resistencias utilizadas en cada uno de los módulos que

Es recomendable, que dentro de cada módulo, se haga el montaje por

Toda la fase de montaje y puesta a punto de los circuitos, debe realizarse

La Figura 2.1 muestra el diagrama de bloques del sistema completo.

Figura 2.1. Diagrama de bloques del sistema.

3.1 Requisitos funcionales

Suministra una señal proporcional al error entre el valor de consigna de

La señal de error se envía al módulo de alarma y al módulo actuador.

♦ 0V para una temperatura de 90ºC

La Figura 3.1 muestra el diagrama de bloques del circuito sensor-

Figura 3.1. Diagrama de bloques del módulo sensor-actuador.

El sensor de temperatura es una termorresistencia PT-100, cuyo valor para 0ºC

tensión en la PT-100, variará de forma proporcional a la variación de su

Figura 3.2. Puente de Wheatstone con linealidad

El circuito que se usará como fuente de corriente se muestra en la Figura 3.3.

La corriente que circulará por la salida de la fuente de corriente viene

Figura 3.3. Fuente de corriente de compensación

Por último, la variación en la corriente que se produce por la R3 del puente de

Para esta conversión, se utilizará un circuito amplificador inversor como el que

Figura 3.4. Circuito amplificador de salida

El producto de la corriente de desequilibrio multiplicada por R, será la tensión

Las hojas de características de todos los componentes electrónicos necesarios

La señal de error de temperatura obtenida con este módulo, se envía a los

4.1 Requisitos funcionales

Recibe la señal de error de temperatura procedente del módulo sensor-

La señal acústica deberá tener un tono correspondiente a una frecuencia de

La señal óptica parpadeará cuando se produzca la alarma.

4.2 Especificaciones del diseño

La Figura 4.1 muestra el diagrama de bloques del módulo de alarma.

La entrada a este módulo, es la salida del módulo sensor-acondicionador. Lo

Entrada proporcional Comparador de

Señal luminosa (led)

Amplificador de salida con Altavoz

Figura 4.1. Diagrama de bloques del módulo de alarma.

El circuito comparador de ventana puede verse en la Figura 4.2.

Figura 4.2. Circuito comparador de ventana.