FQP7P06

FQP7P06
P-Channel QFET MOSFET

-60 V, -7 A, 410 m
Description
Features
This P-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductors proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
-7 A, -60 V, RDS(on)=410 m(Max.) @VGS=-10 V, ID=-3.5 A

Low Gate Charge (Typ. 6.3 nC)
Low Crss (Typ. 25 pF)
100% Avalanche Tested
175C Maximum Junction Temperature Rating
S
!
G!
TO-220
G DS
Absolute Maximum Ratings

Symbol
VDSS
ID
TC = 25C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current
FQP7P06
-60
- Continuous (TC = 100C)

IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
Unit
V
-7.0
-4.95
-28
25
(Note 2)
90
mJ
Avalanche Current
(Note 1)
-7.0
Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
Power Dissipation (TC = 25C)
(Note 1)
4.5
-7.0
45
0.3
-55 to +175
mJ
V/ns
W
W/C
C
300
(Note 3)
- Derate above 25C

Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
RCS
Thermal Resistance, Case-to-Sink
0.5
--
C/W
RJA
Thermal Resistance, Junction-to-Ambient
--
62.5
C/W
2001 Fairchild Semiconductor Corporation

FQP7P06 Rev. C0
Max
3.35
Unit
C/W
Symbol
RJC
www.fairchildsemi.com
FQP7P06 P-Channel MOSFET
March 2013
Symbol
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
-60
--
--
--
-0.07
--
V/C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 A
BVDSS
/
TJ
Breakdown Voltage Temperature

Coefficient
ID = -250 A, Referenced to 25C
IDSS
IGSSF
IGSSR
VDS = -60 V, VGS = 0 V
--
--
-1
VDS = -48 V, TC = 150C
--
--
-10
Gate-Body Leakage Current, Forward
VGS = -25 V, VDS = 0 V
--
--
-100
nA
Gate-Body Leakage Current, Reverse
VGS = 25 V, VDS = 0 V
--
--
100
nA
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 A
-2.0
--
-4.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -3.5 A
--
0.32
0.41
gFS
Forward Transconductance
VDS = -30 V, ID = -3.5 A
--
4.0
--
--
225
295
pF
--
110
145
pF
--
25
32
pF
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,

f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -30 V, ID = -3.5 A,

RG = 25
(Note 4, 5)
VDS = -48 V, ID = -7.0 A,

VGS = -10 V
(Note 4, 5)
--
25
ns
--
50
110
ns
--
7.5
25
ns
--
25
60
ns
--
6.3
8.2
nC
--
1.6
--
nC
--
3.1
--
nC
Drain-Source Diode Characteristics and Maximum Ratings

IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-7.0
ISM
--
--
-28
VSD
Maximum Pulsed Drain-Source Diode Forward Current

VGS = 0 V, IS = -7.0 A
Drain-Source Diode Forward Voltage
--
--
-4.0
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -7.0 A,
dIF / dt = 100 A/s
(Note 4)
--
77
--
ns
--
0.23
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.1mH, IAS = -7.0A, VDD = -25V, RG = 25 , Starting TJ = 25C
3. ISD -7.0A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature

FQP7P06 Rev. C0
Elerical Characteristics
Typical Characteristics
VGS
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
Top :
-I D, Drain Current [A]
10
-I D , Drain Current [A]
10
10
Notes :
1. 250 s Pulse Test
2. TC = 25
-1
10
175
0
10
25
-55
Notes :
1. VDS = -30V
2. 250 s Pulse Test
-1
-1
10
10
10
10
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.2
10
-I DR , Reverse Drain Current [A]
RDS(on) [ ],
Drain-Source On-Resistance
1.0
VGS = - 10V
0.8
VGS = - 20V
0.6
0.4
0.2
Note : TJ = 25
0.0
10
175
25
Notes :
1. VGS = 0V
2. 250 s Pulse Test
-1
12
16
20
24
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperature
12
600
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
500
10
Capacitance [pF]
400
Notes :
Ciss
1. VGS = 0 V
300
2. f = 1 MHz
200
Crss
100
0
-1
10
-V GS , Gate-Source Voltage [V]
VDS = -30V
Coss
VDS = -48V
2
Note : ID = -7.0 A
0
0
10
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics

FQP7P06 Rev. C0
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
(Continued)
2.5
1.2
2.0
1.1
RDS(ON) , (Normalized)
Drain-Source On-Resistance
-BV DSS , (Normalized)

Drain-Source Breakdown Voltage
Typical Characteristics
1.0
Notes :
1. VGS = 0 V
2. ID = -250 A
0.9
0.8
-100
-50
50
100
150
1.5
1.0
Notes :
1. VGS = -10 V
2. ID = -3.5 A
0.5
0.0
-100
200
-50
50
100
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
10
Operation in This Area

is Limited by R DS(on)
100 s
1 ms
10
10 ms
DC
10
Notes :
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
-1
10
10
0
25
10
10
50
Figure 9. Maximum Safe Operating Area
100
125
150
175
Figure 10. Maximum Drain Current

vs. Case Temperature
D = 0 .5
10
N o te s :
1 . Z J C ( t ) = 3 . 3 5 /W M a x .
2 . D u ty F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C( t )
0 .2
0 .1
0 .0 5
10
0 .0 2
0 .0 1
-1
JC
( t) , T h e r m a l R e s p o n s e
75
TC, Case Temperature []
-VDS, Drain-Source Voltage [V]
PDM
t1
s in g le p u ls e
t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve

FQP7P06 Rev. C0
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50K
Qg
200nF
12V
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
t on
VDD
VGS
RG
td(on)
VGS
t off
tr
td(off)
tf
10%
DUT
-10V
VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
tp
ID
RG
VDD
DUT
-10V
tp

FQP7P06 Rev. C0
VDD
Time
VDS (t)
ID (t)
IAS
BVDSS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Compliment of DUT
(N-Channel)
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
10V
Body Diode Reverse Current
IRM
di/dt
IFM , Body Diode Forward Current
VDS
( DUT )
VSD
Body Diode
Forward Voltage Drop
VDD
Body Diode Recovery dv/dt

FQP7P06 Rev. C0
Mechanical Dimensions
TO-220
Dimensions in Millimeters

FQP7P06 Rev. C0
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I64

FQP7P06 Rev. C0
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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FQP7P06

P-Channel QFET MOSFET

This P-Channel enhancement mode power MOSFET is

-7 A, -60 V, RDS(on)=410 m(Max.) @VGS=-10 V, ID=-3.5 A

Absolute Maximum Ratings

TC = 25C unless otherwise noted

- Continuous (TC = 100C)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

- Derate above 25C

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

2001 Fairchild Semiconductor Corporation

FQP7P06 P-Channel MOSFET

TC = 25C unless otherwise noted

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

ID = -250 A, Referenced to 25C

VDS = -60 V, VGS = 0 V

VDS = -48 V, TC = 150C

Gate-Body Leakage Current, Forward

VGS = -25 V, VDS = 0 V

Gate-Body Leakage Current, Reverse

Zero Gate Voltage Drain Current

Gate Threshold Voltage

VDS = VGS, ID = -250 A

VGS = -10 V, ID = -3.5 A

VDS = -30 V, ID = -3.5 A

Reverse Transfer Capacitance

VDS = -25 V, VGS = 0 V,

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

VDD = -30 V, ID = -3.5 A,

VDS = -48 V, ID = -7.0 A,

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Reverse Recovery Time

Reverse Recovery Charge

2001 Fairchild Semiconductor Corporation

FQP7P06 P-Channel MOSFET

FQP7P06 P-Channel MOSFET

-I D, Drain Current [A]

-I D , Drain Current [A]

-VGS , Gate-Source Voltage [V]

-VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

-I DR , Reverse Drain Current [A]

-ID , Drain Current [A]

-VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

-V GS , Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

2001 Fairchild Semiconductor Corporation

QG, Total Gate Charge [nC]

Figure 6. Gate Charge Characteristics

-BV DSS , (Normalized)

FQP7P06 P-Channel MOSFET