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PRODUCT GUIDE Discrete IGBTs 2010-3 http://www.semicon.toshiba.co.jp/eng

PRODUCT GUIDE

Discrete IGBTs

2010-3

PRODUCT GUIDE Discrete IGBTs 2010-3 http://www.semicon.toshiba.co.jp/eng

http://www.semicon.toshiba.co.jp/eng

1

Features and Structure

IGBT: Insulated Gate BipolarTransistor

IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive. The conductivity modulation characteristics of a bipolar transistor make it ideal for load control applications that require high breakdown voltage and high current. Toshiba offers a family of fast switching IGBTs, which are low in carrier injection and recombination in carrier.

Features of the Toshiba Discrete IGBTs

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching (2) Low collector-emitter saturation voltage even in the large current area (3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications (4) High input impedance allows voltage drives (5) Available in a variety of packages

Construction

The basic structure of the planar IGBT consists of four layers (pnpn), as shown in the following figure. Low saturation voltage is achieved by using a pnp transistor to allow conductivity modulation during conduction. Unlike MOSFETs, the IGBT does not have an integral reverse diode, since the collector contact is made on the p + layer.

Planar Structure Equivalent Circuit Collector Emitter Electrode Gate n + n + n + Gate
Planar Structure
Equivalent Circuit
Collector
Emitter
Electrode
Gate
n +
n +
n +
Gate
p
p
p
+
p
n –
n +
Collector
Collector
p +
Emitter
GATE METAL
Collector
Rn- (MOD)
Rn- (MOD)
+
p
+
+
+
+
p
n
p
p
p
Gate
Gate
+
n
+
p
n +
n +
n +
n +
Emitter
Emitter
n +
EMITTER METAL
INSULATOR
POLY SILICON
GATE BONDING PAD
+
+
p
p
n
+
n
+
p
Collector METAL

2

2

IGBT Technical Overview

Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs. On the other hand, the IGBT structure consists of a pnp bipolar transistor and a collector contact made on the p + layer. The IGBT has a low on-state voltage drop due to conductivity modulation. The following figure shows the VCE(sat) curve of a soft-switching 900-V IGBT. Toshiba has offered IGBTs featuring fast switching by using carrier lifetime control techniques. Now, Toshiba offers even faster IGBTs with optimized carrier injection into the collector p + layer. In the future, Toshiba will launch IGBTs with varied characteristics optimized for high-current-conduction and high-frequency- switching applications. The improvements in IGBTs will be spurred by optimized wafers, smaller pattern geometries and improved carrier lifetime control techniques.

900-V IGBT for Soft-Switching 2.8 High-speed: GT60M323 2.6 High-speed: GT50N322A(1000V) 2.4 Ta = 125˚C 2.2
900-V IGBT for Soft-Switching
2.8
High-speed: GT60M323
2.6
High-speed: GT50N322A(1000V)
2.4
Ta = 125˚C
2.2
Low-VCE(sat): GT60M303
2.0
Ta = 25˚C
1.8
1.6
NEW
GT60M324
1.4
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Eoff(mJ)
@VCC = 140 V, IC = 50 A, VGG = 20 V, RG = 10 Ω, C = 0.33 μF, L = 30 μH
VCE(sat)(V) @IC = 50 A, VGE = 15 V

Discrete IGBT Development Trends

1200 V

(1) High ruggedness (3rd gen): Low VCE(sat) and high ruggedness due to optimized carrier injection and thinner wafers

(2) Soft switching (5th gen): Low VCE(sat) due to trench gate structure

(3) Soft switching (next gen): Thinner wafers and finer process geometries

900

to

(1) Soft switching (4th gen): Low VCE(sat) due to trench gate structure

1500

V

(2) Soft switching (5th gen): Low VCE(sat) due to optimized carrier injection and trench gate structure

 

(3) Soft switching (6th gen): Thinner wafers and finer process geometries

 

(1) High ruggedness (3rd gen): Low VCE(sat) and high ruggedness due to optimized carrier injection and thinner wafers

(2) Fast switching (4th gen): High speedy tf due to optimized carrier injection

600

V

(4) Fast switching (next gen): Thinner wafers and finer process geometries

 

(3) Soft switching (4th gen): Low VCE(sat) due to trench gate structure

(5) Soft switching (5th gen): Thinner wafers and finer process geometries

 

(1) Strobe flashes (5th gen): Low VCE(sat) due to trench gate structure

400

V

(2) Strobe flashes (6th gen): High current due to trench gate structure and optimized wafers

 

(3) Strobe flashes (7th gen): High current due to optimized wafers and finer process geometries

300 to

400 V

(1) Plasma displays (4th gen): Low VCE(sat) due to trench gate structure and high IC due to lifetime control

(2) Plasma displays (5th gen): Low turn-on loss due to finer process geometries

(3) Plasma displays (6th gen): Low turn-on loss due to optimized wafers and finer process geometries

Year

2006

2008

3

2010

2012

3

Discrete IGBT Product List

     

TSON-8

TSSOP-8

SOP-8

TO-220NIS

TO-220SIS

TO-220SM

TO-3P(N)

TO-3P(N)IS

TO-3P(LH)

Applications and

Breakdown Voltage VCES (V) @Ta = 25˚C

IGBT Current Rating IC (A) @Ta = 25˚C

Applications and Breakdown Voltage V CES (V) @Ta = 25˚C IGBT Current Rating I C (A)
Applications and Breakdown Voltage V CES (V) @Ta = 25˚C IGBT Current Rating I C (A)
Applications and Breakdown Voltage V CES (V) @Ta = 25˚C IGBT Current Rating I C (A)
Applications and Breakdown Voltage V CES (V) @Ta = 25˚C IGBT Current Rating I C (A)
Applications and Breakdown Voltage V CES (V) @Ta = 25˚C IGBT Current Rating I C (A)
Applications and Breakdown Voltage V CES (V) @Ta = 25˚C IGBT Current Rating I C (A)
Applications and Breakdown Voltage V CES (V) @Ta = 25˚C IGBT Current Rating I C (A)
Applications and Breakdown Voltage V CES (V) @Ta = 25˚C IGBT Current Rating I C (A)
Applications and Breakdown Voltage V CES (V) @Ta = 25˚C IGBT Current Rating I C (A)

Features

 

DC

Pulse

       
   

5

10

     

GT5J301

 

GT5J311

     

10

20

     

GT10J303

 

GT10J312

GT10J301

   

15

30

     

GT15J301

 

GT15J311

     
               

GT20J301

   

General-purpose motors General-purpose inverters Hard switching fc: up to 20 kHz

600

20

40

GT20J101

               

GT30J301

   

30

60

GT30J101

                   

GT50J301

 

50

100

GT50J102

High ruggedness

                 

GT10Q301

   

Series

10

20

GT10Q101

1200

               

GT15Q301

   

15

30

GT15Q102

                     

GT25Q301

25

50

GT25Q102

General-purpose inverters Fast switching Hard switching fc: up to 50 kHz

 

10

20

     

GT10J321

         

15

30

     

GT15J321

         

20

40

     

GT20J321

         

600

               

GT30J324

GT30J126

 

30

60

GT30J121

FS series

                   

GT50J325

50

100

GT50J121

General-purpose inverters

600

15

30

         

GT15J331

     

Low-VCE(sat) IGBT

   

30

100

             

GT30J322

 
               

GT40J321

   

40

100

GT40J322

               

GT50J327

 

GT50J322

600

50

100

GT50J322H

120

           

GT50J328

   
                     

GT60J321

Resonant switching

Soft switching

60

120

GT60J323

GT60J323H

 

15

30

             

GT15M321

 

Soft-Switching

900

50

120

           

GT50M322

   
                     

Series

 

60

120

           

GT60M324

 

GT60M303

 

GT60M323

                   

GT50N322A

   

1000

50

120

GT50N324

57

120

               

GT60N322

 

60

120

               

GT60N321

1200

42

80

           

GT40Q321

   

1500

40

80

           

GT40T321

 

GT40T302

PFC

600

30

100

             

GT30J122

 
     

130

GT5G133

               
     

GT8G133

             

Strobe flashes

400

150

GT8G134

GT8G132

GT8G136

 

200

   

GT10G131

           
     

120

       

GF30F122

       
           

GF30F123

GT45F131

     

GT30F124

GT45F122

300

200

GT45F123

GT45F124

GT45F125

GT45F127

             

GT30F125

       

Plasma display

panels

330

200

GT45F128

   

120

       

GT30G122

       
           

GT45G122

GT45G131

     
 

400

GT45G123

200

GT45G124

GT45G125

             

GT30G123

       

GT30G124

430

200

GT30G125

GT45G127

GT45G128

600

 

200

       

GT30J124

       

4 Part Numbering Scheme

Example

GT 60 M 3 03 A

  4 Part Numbering Scheme Example GT 60 M 3 03 A Version Serial number 1:
  4 Part Numbering Scheme Example GT 60 M 3 03 A Version Serial number 1:

Version

Serial number

1: N-channel

3: N-channel with built-in

2: P-channel

freewheeling diode

Voltage rating (see Table 1.)

Collector current rating (DC) Discrete IGBT

4

Table 1

: New product Letter Voltage (V) Letter Voltage (V) Letter Voltage (V) C 150 J
: New product
Letter
Voltage (V)
Letter
Voltage (V)
Letter
Voltage (V)
C
150
J
600
Q
1200
D
200
K
700
R
1300
E
250
L
800
S
1400
F
300
M
900
T
1500
G
400
N
1000
U
1600
H
500
P
1100
V
1700

5-1

General-Purpose Inverter

The fast-switching (FS) series, a new addition to our third-generation IGBTs, features high ruggedness which
The fast-switching (FS) series, a new addition to our third-generation IGBTs,
features high ruggedness which helps to improve the energy efficiency of electronic equipment.
General-Purpose
Inverter Air
Inverter Washing
UPS
Inverters
Conditioners
Machines
Rectifier
PL
PL
circuit
Inverter
Output
Input
CB
Control

Discrete IGBT Trend

For general-purpose inverters

Our 3rd generation low-loss and low-noise IGBTs are ideal for inverter applications to reduce switching loss and thus improve energy efficiency. The following graphs compare the thermal and turn-on characteristics of our 3rd generation IGBTs and 500-V MOSFETs

IC - VCE Temperature Characteristics Turn-On Waveform Low saturation voltage with minimal temperature dependence Fast
IC - VCE Temperature Characteristics
Turn-On Waveform
Low saturation voltage with minimal temperature dependence
Fast reverse-recovery characteristics due to built-in
diode with optimal characteristics
50
GT50J301
VCE
MOSFET
40
GT50J301
MOSFET
30
@VGE = 15 V
MOSFET
GT50J301
20
GT50J301:
Ic
10
Ta = 25°C
Ta = 125°C
MOSFET (500 V / 50 A):
@
Ta = 125°C
VCC = 300 V
Ta = 25°C
Ta = 125°C
VGE = + 15 V
di/dt
–400 A/μs
0 02468
10
t : 0.1μs/div
Collector - Emitter Voltage, VCE (V)
Power Loss vs. Carrier Frequency Characteristics
Simulation data for inverter applications
80
60
GT50J301
@fo = 50 Hz
Po = 7.5 kW
40
MOSFET
GT50J301:
Ta = 25°C
Ta = 125°C
MOSFET (500 V / 50 A):
20
Ta = 25°C
Ta = 125°C
0 0
4
8
12
16
20
24
Carrier Frequency, fC (kHz)
Collector Current, IC (A)
Loss (W/Tr)
VCE: 100 V/div
IC: 10 A/div

5

5-1

General-Purpose Inverter

Fast-Switching (FS) Series

For general-purpose inverters

Compared to the third-generation highly rugged series, the FS series is optimized for switching speed, reducing the total switching loss (Eon + Eoff) by 30% (according to Toshiba’s comparative test).

Typical Waveforms

GT20J321(4th generation, FS Series) Eon = 0.6 mJ Eoff = 0.47 mJ VGE VCE Ta
GT20J321(4th generation, FS Series)
Eon = 0.6 mJ
Eoff = 0.47 mJ
VGE
VCE
Ta
IC
IC
LOSS
Eon = 0.9 mJ
Eoff = 0.54 mJ
VGE
VCE
IC
IC
LOSS
GT20J301(3rd generation) Eon = 0.95 mJ Eoff = 0.56 mJ VGE VCE IC IC LOSS
GT20J301(3rd generation)
Eon = 0.95 mJ
Eoff = 0.56 mJ
VGE
VCE
IC
IC
LOSS
Eon = 1.1 mJ
Eoff = 1.0 mJ
VGE
VCE
IC
IC
LOSS

(LOSS: 0.5 mJ/div)

= 25˚C

Ta = 125˚C

(VCE: 50 V/div, IC: 5 A/div, VGE: 10 V/div, LOSS: 0.2 mJ/div, t: 0.2 μs/div)

Reduced switching loss of fast-switching IGBTs in comparison with high ruggedness IGBTs Test condition: IC = 20 A, V GE = 15 V, RG = 33 Ω , Ta = 125˚C, with inductive load, V CC = 300 V

Turn-On Loss Turn-Off Loss 1.1 mJ 1.0 mJ 0.9 mJ 0.54 mJ Fast-switching High ruggedness
Turn-On Loss
Turn-Off Loss
1.1 mJ
1.0 mJ
0.9 mJ
0.54 mJ
Fast-switching
High ruggedness
Fast-switching
High ruggedness
4th generation
3rd generation
4th generation
3rd generation
GT20J321
GT20J301
GT20J321
GT20J301

6

▼ Product List For general-purpose inverters ▼ Circuit Configurations Single Gate Collector Built-in

Product List

For general-purpose inverters

Circuit Configurations

Single

Gate
Gate

Collector

Built-in FRD

Gate
Gate

Collector

Emitter

 

Emitter

600-V and 1200-V IGBTs (3rd Generation)

     

Absolute Maximum Ratings

   

VCE(sat) Typ.

tf Typ.

 

Main

VCES

 

IC

PC

Circuit

         

Features

Part Number

Package

 

Configuration

@IC

@VGE

Load

Remarks

Applications

       
 

DC

Pulsed

Tc =25˚C

 

(*1)

   

(*2)

 
 

(V)

(A)

(A)

(W)

 

Type

(V)

(A)

(V)

(μs)

   

GT10Q101

1200

10

20

140

TO-3P(N)

2.1

10

15

0.16

L

 

V CESHigh

 

GT10Q301

1200

10

20

140

TO-3P(N)

Built-in FRD

2.1

10

15

0.16

L

 

(1200V)

GT15Q102

1200

15

30

170

TO-3P(N)

2.1

15

15

0.16

L

 

GT15Q301

1200

15

30

170

TO-3P(N)

Built-in FRD

2.1

15

15

0.16

L

 
 

GT25Q102

1200

25

50

200

TO-3P(LH)

2.1

25

15

0.16

L

 
 

GT25Q301

1200

25

50

200

TO-3P(LH)

Built-in FRD

2.1

25

15

0.16

L

 

Motor driving (UPS/PFC)

 

GT5J301

600

5

10

28

TO-220NIS

Built-in FRD

2.1

5

15

0.15

L

 

GT5J311

600

5

10

45

TO-220SM

SMD

Built-in FRD

2.1

5

15

0.15

L

 

GT10J301

600

10

20

90

TO-3P(N)

 

– Built-in FRD

2.1

10

15

0.15

L

 

GT10J303

600

10

20

30

TO-220NIS

 

– Built-in FRD

2.1

10

15

0.15

L

 

GT10J312

600

10

20

60

TO-220SM

SMD

Built-in FRD

2.1

10

15

0.15

L

 

VCES

High

(600V)

GT15J301

600

15

30

35

TO-220NIS

Built-in FRD

2.1

15

15

0.15

L

 

GT15J311

600

15

30

70

TO-220SM

SMD

Built-in FRD

2.1

15

15

0.15

L

 
 

GT20J101

600

20

40

130

TO-3P(N)

 

– 2.1

 

20

15

0.15

L

 
 

GT20J301

600

20

40

130

TO-3P(N)

 

– 2.1

Built-in FRD

 

20

15

0.15

L

 

GT30J101

600

30

60

155

TO-3P(N)

 

– 2.1

 

30

15

0.15

L

 

GT30J301

600

30

60

155

TO-3P(N)

 

– 2.1

Built-in FRD

 

30

15

0.15

L

 

GT50J102

600

50

100

200

TO-3P(LH)

 

– 2.1

 

50

15

0.15

L

 

GT50J301

600

50

100

200

TO-3P(LH)

 

– 2.1

Built-in FRD

 

50

15

0.15

L

 

Power factor

correction

Low-frequency

switching

GT30J122

600

30

100

75

TO-3P(N)IS

 

– 2.1

 

50

15

0.25

R

Partial Switching

Converter

600-V Fast-Switching IGBTs (4th Generation)

(FS: Fast Switching)

           

VCE(sat) Typ.

tf Typ.

 
 

Main

VCES

 

IC

PC

Circuit

         

Features

Part Number

Package

 

Configuration

@IC

@VGE

Load

Remarks

Applications

       
   

DC

Pulsed

Tc =25˚C

 

(*1)

   

(*2)

 
 

(V)

(A)

(A)

(W)

 

Type

(V)

(A)

(V)

(μs)

   

GT10J321

600

10

20

29

TO-220NIS

 

– Built-in FRD

2.0

10

15

0.03

L

 
 

Inverter power supplies (UPS/PFC/motor)

GT15J321

600

15

30

30

TO-220NIS

 

– Built-in FRD

1.9

15

15

0.03

L

 

Fast switching

GT15J331

600

15

30

70

TO-220SM

SMD

Built-in FRD

1.75

15

15

0.10

L

Low VCE(sat)

GT20J321

600

20

40

45

TO-220NIS

Built-in FRD

2.0

20

15

0.04

L

 

GT30J121

600

30

60

170

TO-3P(N)

15

2.0

30

 

0.05

L

 

GT30J126

600

30

60

90

TO-3P(N)IS

15

1.95

30

 

0.05

L

Isolation Package

GT30J324

600

30

60

170

TO-3P(N)

Built-in FRD

2.0

30

15

0.05

L

 
 

GT50J121

600

50

100

240

TO-3P(LH)

2.0

50

15

0.05

L

 
 

GT50J325

600

50

100

240

TO-3P(LH)

Built-in FRD

2.0

50

15

0.05

L

 

*1

: Single FRD: Fast Recovery Diode R : Resistive load L : Inductive load

 

*2

7

5-2

Soft-Switching Applications

Static inverters in IH cooktops, IH rice cookers and microwave ovens utilize a soft-switching technique
Static inverters in IH cooktops, IH rice cookers and microwave ovens utilize a
soft-switching technique which exhibits low switching loss. Toshiba offers IGBTs suitable
for soft-switching applications.
Microwave Ovens
IH Rice Cookers
IH Cookers
MFPs
AC Input Voltage
Circuit
IGBT Rating
Voltage Resonance
Waveform
100
V to 120 V
VCES = 900 V to 1000 V
IC = 15 A to 60 A
IC
IC
VCE
200
V to 240 V
VCE
VCES = 1200 V to 1500 V
IC = 40 A
Current Resonance
Waveform
VCES = 400 V
IC = 40 A to 50 A
IC
100
V to 240 V
IC
VCE
VCE
VCES = 600 V
IC = 30 A to 80 A
IH: Induction heating
MFP: Multifunction Printer

8

Product List For soft switching Circuit Configurations Single Built-in FRD Collector Collector Gate Gate Emitter

Product List

For soft switching Circuit Configurations Single Built-in FRD Collector Collector Gate Gate Emitter Emitter ▼
For soft switching
Circuit Configurations
Single
Built-in FRD
Collector
Collector
Gate
Gate
Emitter
Emitter

IGBTs for Soft-Switching Applications

Absolute Maximum Ratings VCE(sat) Typ. tf Typ. Circuit IC PC Main Features Part Number Package
Absolute Maximum Ratings
VCE(sat) Typ.
tf Typ.
Circuit
IC
PC
Main
Features
Part Number
Package
Configuration
Remarks
@IC
@VGE
Load
Applications
VCES
Tj
DC
Pulsed
TC = 25˚C
(*1)
(V)
(˚C)
(V)
(A)
(V)
(μs)
(*2)
(A)
(A)
(W)
GT30J322
30
100
75
150
TO-3P(N)IS
2.1
50
15
0.25
GT40J321
40
100
120
150
2.0
40
15
0.11
Fast switching
TO-3P(N)
GT40J322
40
100
120
150
1.7
40
15
0.2
GT50J322
50
100
130
150
2.1
50
15
0.25
TO-3P(LH)
GT50J322H
50
100
130
150
2.2
50
15
0.11
Fast switching
AC 200 V
600
GT50J327
50
100
140
150
1.9
50
15
0.19
TO-3P(N)
GT50J328
50
120
140
150
2.0
50
15
0.10
Fast switching
GT60J321
60
120
200
150
1.55
60
15
0.30
GT60J323
60
120
170
150
TO-3P(LH)
1.9
60
15
0.16
GT60J323H
60
120
170
150
2.1
60
15
0.12
Fast switching
GT15M321
15
30
55
150
TO-3P(N)IS
1.8
15
15
0.20
GT50M322
50
120
156
150
TO-3P(N)
Built-in FRD
2.1
60
15
0.25
R
GT60M303
900
60
120
170
150
2.1
60
15
0.25
TO-3P(LH)
GT60M323
60
120
200
150
2.3
60
15
0.09
Fast switching
GT60M324
60
120
254
175
1.7
60
15
0.11
Tj = 175˚C
AC 100 V
GT50N321
50
120
156
150
2.5
60
15
0.25
TO-3P(N)
GT50N322A
50
120
156
150
2.2
60
15
0.10
Fast switching
GT50N324
1000
50
120
150
150
1.9
60
15
0.11
6th generation
GT60N321
60
120
170
150
2.3
60
15
0.25
TO-3P(LH)
GT60N322
57
120
200
150
2.4
60
15
0.11
Fast switching
GT40Q321
1200
42
80
170
150
2.8
40
15
0.41
TO-3P(N)
AC 200 V
GT40T321
40
80
230
175
2.15
40
15
0.24
Tj = 175˚C
1500
GT40T302
40
80
200
150
TO-3P(LH)
3.7
40
15
0.23
*1
: New product
*2
FRD: Fast Recovery Diode
R : Resistive load
IH rice cookers and IH cooktops
resonance Current resonanceVoltage

9

5-2

Soft-Switching Applications

Comparisons Between Hard and Soft Switching (diagrams shown only as a guide)

Hard and Soft Switching (diagrams shown only as a guide) Hard Switching Soft Switching High-current, SOA
Hard Switching Soft Switching High-current, SOA SOA Thermal resistance limit area high-voltage locus S/B limit
Hard Switching
Soft Switching
High-current,
SOA
SOA
Thermal resistance limit area
high-voltage
locus
S/B limit area
IC
IC
High-current,
low-voltage and
low-current,
high-voltage locus
VCE
VCE
SOA Locus for Hard Switching
SOA Locus for Soft Switching
VCE
VCE
VCE
IC
IC
IC
Switching Characteristics
Current Resonance
Voltage Resonance
(Example)
(Example)
(Example)

5-3

Strobe Flash Applications

Strobe flash control is now prevalent in digital still cameras. Package sizes are getting smaller,
Strobe flash control is now prevalent in digital still cameras. Package sizes are getting smaller,
and logic levels are increasingly used to represent the gate drive voltage. Toshiba offers
compact IGBTs featuring low gate drive voltage.
■ As a voltage-controlled device, the IGBT requires only a few components for drive circuit.
■ IGBTs require fewer components for the strobe flash circuit (compared to SCRs).
■ Strobe flash IGBTs are capable of switching large currents.
DSC, Compact Camera
Single-Lens Reflex Camera

10

5-3

Strobe Flash Applications

Product List 2.5-V to 4.0-V Gate Drive Series

For strobe flashes

The IGBT can operate with a gate drive voltage of 2.5 V to 4.0 V. The common 3.3-V or 5-V internal power supply in a camera can be used as a gate drive power supply to simplify the power supply circuitry. A zener diode is included between the gate and emitter to provide ESD surge protection.

Example of an IGBT Gate Drive Circuit (3.3-V Power Supply) Xe lamp Resistor P-ch 910
Example of an IGBT Gate Drive Circuit (3.3-V Power Supply)
Xe lamp
Resistor
P-ch
910 Ω
Trigger transformer
3.3-V
power supply
Main
91 Ω
Capacitor
20 kΩ
1.2 kΩ
Resonant capacitor
N-ch
IGBT
470 Ω
GT8G134
3 V
0

3.3-V Power Supply

   

Gate Drive

VCE(sat) (V)

 

PC (W) @Ta = 25˚C

 

Board

 

Part Number

VCES / IC

Voltage Min

   

Package

Connection

 

Remarks

(V)

Typ.

VGE / IC

 

GT5G133

400

V / 130 A

2.5

3.0

2.5

V / 130 A

0.83

TSON-8

 

1

7th generation

GT8G136

400

V / 150 A

3

3.5

3 V / 150 A

1.1

TSSOP-8

 

2

5th generation

 

GT8G134

400

V / 150 A

2.5

3.4

2.5

V / 150 A

1.1

TSSOP-8

 

2

6th generation

5-V Power Supply

 
5-V Power Supply   : New product

: New product

   

Gate Drive

VCE(sat) (V)

         

Part Number

VCES / IC

Voltage Min

PC (W) @Ta = 25˚C

Package

Board

 

Remarks

   

Connection

   

(V)

Typ.

VGE / IC

   

GT8G132

400

V / 150 A

4.0

2.3

4.0

V / 150 A

1.1

SOP-8

 

1 5th generation

GT8G133

400

V / 150 A

4.0

2.9

4.0

V / 150 A

1.1

TSSOP-8

 

1 5th generation

GT10G131

400

V / 200 A

4.0

2.3

4.0

V / 200 A

1.9

SOP-8

 

1 5th generation

<Connection Examples>

 

1: Board connection example

Collector

2: Board connection example

Collector

5,6,7,8

5,6,7,8

Gate 4
Gate
4

Gate

4

Emitter

1,2,3

Emitter

Emitter for gate drive circuitry

All the emitter terminals should be connected together.

 

1,2

3

11

5-4

Plasma Display Panel Applications

Plasma Displays Parallel MOSFETs have been used for the drive circuitry of plasma display panels
Plasma Displays
Parallel MOSFETs have been used for the drive circuitry of plasma display
panels (PDPs). Recently, however, IGBTs are commonly used in large
current applications due to their superior current conduction capability.
Example of a Plasma Display Panel Drive Circuit
PDP (Sustain circuit)
X electrodes (X output)
X drive circuit
C1
Energy recovery circuit
Sustain circuit
Vsus
Separation circuit
Panel
Y electrodes (Y output)
Y drive circuit
C2

Product List

300-V IGBTs

For plasma display panels

Part Number

VCES / Icp @3 μs

VCE(sat) (V) Typ. @120 A

PC (W) @Tc = 25˚C

Package

Remarks

GT30F122

 

300

V / 120 A*

2.4

25

TO-220SIS

5th generation

GT30F123

 

300

V / 200 A

2.1

25

TO-220SIS

6th generation

GT30F124

 

300

V / 200 A

2.3

25

TO-220SIS

6th generation

GT30F125

 

330

V / 200 A

1.9

25

TO-220SIS

6th generation

GT45F122

 

300

V / 200 A

2.2

25

TO-220SIS

5th generation

GT45F123

 

300

V / 200 A

1.95

26

TO-220SIS

5th generation

GT45F124

 

300

V / 200 A

1.7

29

TO-220SIS

5th generation

GT45F125

 

300

V / 200 A

1.45

29

TO-220SIS

5th generation

GT45F127

 

300

V / 200 A

1.6

26

TO-220SIS

6th generation

GT45F128

 

330

V / 200 A

1.45

26

TO-220SIS

6th generation

GT45F131

 

300

V / 200 A

1.7

160

TO-220SM

5th generation

*: @100 μs

:
:

New product

400-V IGBTs

 

Part Number

VCES / Icp @3 μs

VCE(sat) (V) Typ. @120 A

PC (W) @Tc = 25˚C

Package

Remarks

GT30G122

 

400

V / 120 A*

2.6

25

TO-220SIS

5th generation

GT30G123

 

430

V / 200 A

2.2

25

TO-220SIS

6th generation

GT30G124

 

430

V / 200 A

2.5

25

TO-220SIS

6th generation

GT30G125

 

430

V / 200 A

2.1

25

TO-220SIS

6th generation

GT45G122

 

400

V / 200 A

2.4

25

TO-220SIS

5th generation

GT45G123

 

400

V / 200 A

2.1

26

TO-220SIS

5th generation

GT45G124

 

400

V / 200 A

1.9

29

TO-220SIS

5th generation

GT45G125

 

400

V / 200 A

1.6

29

TO-220SIS

5th generation

GT45G127

 

430

V / 200 A

1.7

26

TO-220SIS

6th generation

GT45G128

 

430

V / 200 A

1.55

26

TO-220SIS

6th generation

GT45G131

 

400

V / 200 A

1.9

160

TO-220SM

5th generation

*: @100 μs

:
:

New product

600-V IGBTs

 

Part Number

VCES / Icp @3 μs

VCE(sat) (V) Typ. @120 A

PC (W) @Ta = 25˚C

Package

Remarks

GT30J124

 

600

V / 200 A

2.4

26

TO-220SIS

5th generation

 
:
:

New product

12

6

Package Dimensions

Unit: mm

TSSOP-8 SOP-8 8 5 8 5 1 4 0.595 typ. 0.4 ± 0.1 0.25 M
TSSOP-8
SOP-8
8
5
8
5
1
4
0.595 typ.
0.4 ± 0.1
0.25
M
1.27
(0.525)
1
4
0.25 ± 0.05
0.65
5.5
max
3.3
max
3.0
± 0.1
5.0
± 0.2
0.6 ± 0.2
0.05
0.5 ± 0.2
1, 2, 3.
Emitter
1, 2, 3.
Emitter
4.
Gate
4.
Gate
0.1
5, 6, 7, 8. Collector
5, 6, 7, 8. Collector
TSON-8
0.3 ± 0.05
0.65 ± 0.05
8
5
1
4
3.1
± 0.1
3.3
± 0.1
1, 2, 3.
Emitter
4.
Gate
5, 6, 7, 8. Collector
TO-220NIS
TO-220SIS
10 ± 0.3
φ3.2 ± 0.2
2.7 ± 0.2
10 ± 0.3
φ3.2 ± 0.2
2.7 ± 0.2
1.14 ± 0.15
1.1
1.1
0.75
± 0.15
0.69 ± 0.15
φ0.25 M
A
2.54
2.54
2.54
± 0.25
2.54 ± 0.25
123
1. Gate
1.
Gate
2. Collector
2.
Collector
1 2
3
3. Emitter
3.
Emitter
0.85 ± 0.05
3.3
± 0.1
0.175 ± 0.03
3.1
± 0.1
5.6 max
0.75 ± 0.15
±4.4
0.1
±0.05
0.05
±0.85
0.05
±6.4
0.3
0.15
3.03.9
2.6
0.15
0.16 +0.04 −0.02
min 15 ± 0.313.0
0.2
0.25
4.5 ± 0.2
0.64
± 0.15
4.4
± 0.2
0.1 + – 0.05 0.1
1.5 ± 0.2
0.15 + 0.1
6.0
± 0.3
– 0.05
2.8 max
2.6 ± 0.1
3.03.9
13 ± 0.5
15 ± 0.3
4.5
± 0.2

13

6

Package Dimensions

Unit: mm

TO-220SM 10.3 max 1.32 0.1 0.76 2.54 2.54 123 1. Gate 2. Collector 3. Emitter
TO-220SM
10.3 max
1.32
0.1
0.76
2.54
2.54
123
1. Gate
2. Collector
3. Emitter
0.5
1.5
2.6
9.1
10.6 max
4.7
max
3 ± 0.2
0.6
1.5
TO-3P(LH) 20.5 max φ3.3 ± 0.2 1.5 2.5 3.0 + 0.3 1.0 – 0.25 5.45
TO-3P(LH)
20.5 max
φ3.3 ± 0.2
1.5
2.5
3.0
+ 0.3
1.0 – 0.25
5.45 ± 0.15
5.45 ± 0.15
1. 1.
Gate Gate
123
2. 2.
Collector Collector
3. 3.
Emitter Emitter
+
0.25
0.6
0.10
2.50
1.5
1.5
2.8
2.0
4.0
5.2
max
6.011.0
20.0
± 0.6
26.0 ± 0.5
2.0

TO-3P(N)

15.9 max φ3.2 ± 0.2 2.0 ± 0.3 + 0.3 1.0 – 0.25 2.03.3 max
15.9
max
φ3.2 ± 0.2
2.0
± 0.3
+ 0.3
1.0
– 0.25
2.03.3
max
2.0
1.0
9.0
4.5
20.5 ± 0.5
20.0 ± 0.3
 
   
   
 
   

max

+ 0.3

0.6 – 0.1

2.8

 

1.8

 
1.8   4.8 max
1.8   4.8 max
1.8   4.8 max

4.8 max

4.8 max
   
   
  123  
 

123

123
 
 

5.45 ± 0.2

5.45 ± 0.2

1. Gate

2. Collector

3. Emitter

TO-3P(N)IS

15.8 ± 0.5 φ3.6 ± 0.2 3.5 2.0 + 0.25 1.0 – 0.15 5.45 ±
15.8
± 0.5
φ3.6 ± 0.2
3.5
2.0
+ 0.25
1.0
– 0.15
5.45
± 0.2
5.45 ± 0.2
+ 0.2
3.15
– 0.1
1
2
3
3.6 max
+
0.25
0.6
0.15
1.0
19.4
min
15.5
5.5
21.0 ± 0.5
5.0 ± 0.3

1. Gate

2. Collector

3. Emitter

14

7

Final-Phase and Obsolete Products

The following products are in stock but are being phased out of production. The recommended replacements that continue to be available are listed in the right-hand column. However, the characteristics of the recommended replacements may not be exactly the same as those of the final-phase and obsolete products. Before using a recommended replacement, be sure to check that it is suitable for use under the intended operating conditions.

Application

Final-Phase or

Absolute Maximum Ratings

Package

Recommended

Absolute Maximum Ratings

Package

Obsolete Product

VCES (V)

IC (A) DC

Obsolete Replacements

VCES (V)

IC (A) DC

 

MG30T1AL1

1500

 

30

IH

MG60M1AL1

900

 

60

IH

GT60M303

900

60

TO-3P(LH)

GT40M101

900

 

40

TO-3P(N)IS

GT40M301

900

 

40

TO-3P(LH)

GT60M303

900

60

TO-3P(LH)

GT40Q322

1200

 

39

TO-3P(N)

GT40Q321

1200

42

TO-3P(N)

GT40Q323

1200

 

39

TO-3P(N)

GT40Q321

1200

42

TO-3P(N)

GT40T101

1500

 

40

TO-3P(LH)

GT40T301

1500

 

40

TO-3P(LH)

GT40T302

1500

40

TO-3P(LH)

GT50L101

800

 

50

TO-3P(L)

GT60M303

900

60

TO-3P(LH)

GT50M101

900

 

50

TO-3P(L)

GT60M303

900

60

TO-3P(LH)