6th Annual International Microelectronics Olympiad of Armenian

TEST
The participants shall select one answer out of 5 possible answers in the answer sheet for each
question (A, B, C, D, E) by crossing lines from the top left corner to the bottom right corner and
form the bottom left corner to the top right corner (as it is shown below).

8.

In the case of crossing out more than one answer for the same question or making any other
notes, the answer to that question will be scored 0.

8.

Participant

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1.

Given an n-input, 1-output combinational circuit C, depending on input variables x1, x2, , xn and
output variable y implementing a function f(x1, x2, , xn), and a combinational circuit C* is given
implementing the function f*(x1, x2, , xn) obtained from C when a fault F (for example, single stuckat-0 or stuck-at-1) occurs on its arbitrary line A. The fault F is diagnosable with respect to a class of
faults if

A.
B.
C.
D.
E.

2.

2 4

For what value of parameter M 0

1 3
A.
B.
C.
D.
E.

3.

Energetic state for which a certain minimum energy is required for the particle to escape it
Dimensional space which the particle can escape if acquires maximum energy
Limited space where the state energy of the particle is less than its maximum transfer energy
Limited space from all sides
All the answers are correct

Physical
Technological
Thermal
Statistical
All the answers are true

Which of these elements are used in high level synthesis algorithms: a-Boolean logic elements; bmultiplexer; c-Flip-Flop; d-transistor; e-register; f-driver?

A.
B.
C.
D.
E.
6.

4/3
1
2
4
3

The main limitations to reduce the feature sizes of the nanoscale integrated circuits are:

A.
B.
C.
D.
E.
5.

1
2 matrix does not have inverse M-1?
2

What is a potential well?

A.
B.
C.
D.
E.
4.

The fault F is necessarily detectable

The fault F is not necessarily detectable
It is necessary and sufficient that the fault F be detectable
All the faults from class are necessarily detectable
All the faults from class are not necessarily detectable

c,d,e,f
a,c,f
a,b,e
a,b,d,f
b,e,f

What does the conductance band difference of the abrupt heterojunction equal to?

A.
B.

C.
D.

Difference of output functions

Difference of dipole moments
Difference of affinities of semiconductors
Difference of the bandgaps

E.
7.

The charge carriers mobility in the double gate MOS transistor is more because

A.
B.
C.
D.
E.
8.

Difference of the Fermi energies

Subthreshold transconductance is high

There exist short channel phenomena
The effective thickness of the oxide is small
Intensity of a cross-sectional field in the channel is small
The channel is far from substrate

For different circuit applications, a bipolar transistor is presented in the form of quadrupole,
characterized by two current values

h11

I 1 and I 2 and two voltage values U 1 ,U 2 .

h12

I1,U1

U2,I2
h21

h22

the following are taken as input parameters for h-parameter system:

U 1 ,U 2
B. I 1 , I 2
C. I 2 ,U 1
D. I 1 ,U 2
E. U1 , I 2
A.

9.

Which are majority carriers in p type semiconductors?

A.
B.
C.
D.
E.

Electrons
Holes
Ions
Electrons and holes
Electrons, holes and ions

10. Consider the following code:

#include<iostream>
class A
{
public :
A()
{
std::cout << "Constructor of A\n";
};
~A()
{

std::cout << "Destructor of A\n";

};
};
class B : public A
{
public :
B()
{
cout << "Constructor of B\n";
};
~B()
{
cout << "Destructor of B\n";
};
};
int main()
{
B* p;
p = new B();
delete p;
return 0;
}
What will be the printed output?

A.

B.

C.

D.

E.

Constructor of B
Constructor of A
Destructor of A
Destructor of B
Constructor of A
Constructor of B
Destructor of B
Destructor of A
Constructor of B
Constructor of A
Destructor of B
Destructor of A
Constructor of A
Constructor of B
Destructor of A
Destructor of B
The sequence of construction and destruction of A and B will be compiler specific

11. Consider the sample code given below and answer the question that follows.

1 class Car
2{

3 private:
4
int Wheels;
5
6 public:
7
Car(int wheels = 0)
8
: Wheels(wheels)
9
{
10
}
11
12
int GetWheels()
13
{
14
return Wheels;
15
}
16 };
17 int main()
18 {
19
Car c(4);
20
cout << "No of wheels:" << c.GetWheels();
21
return 0;
22 }
Which of the following lines from the sample code above are examples of data member definition?

A.
B.
C.
D.
E.

4
7
8
14
19

12. What will happen when the following code is compiled and executed?

#include<iostream>
class my_class
{
private:
int number;
public:
my_class()
{
number = 2;
}
int& a()
{
return number;
}

A.
B.
C.
D.
E.

};
int main()
{
my_class m1, m2;
m1.a() = 5;
m2.a() = m1.a();
std::cout << m2.a();
return 0;
}
Compile time errors will be generated because right hand side of expressions cannot be
functions
The printed output will be 5
The printed output will be 2
The printed output will be undefined
None of the above

13. What will be the output of the following code?

class A
{
public:
A() : m_data(0){}
~A(){}
int operator ++()
{
m_data ++;
std::cout << "In first ";
return m_data;
}
int operator ++(int)
{
m_data ++;
std::cout << "In second ";
return m_data;
}
private:
int m_data;
};
int main()
{
A a;
std::cout << a++;
std::cout << ++a;
return 0;

A.
B.
C.
D.
E.

}
In first 1 In second 2
In second 1In first 2
In first 0 In second 2
In second 0 In first 2
None of the above

14. The product of electron and hole concentrations in extrinsic semiconductor

A.
B.
C.
D.
E.

Depends on Fermi level

Is independent of temperature
Is independent of impurity concentration
Is independent of bandgap energy
Is independent of electron effective masse

15. For the graph to include Euler cycle, it is necessary and sufficient that

A.
B.
C.
D.
E.

It is not connected and the degrees of some nodes are even

It is not connected and the degrees of all nodes are odd
It is not connected and the degrees of all nodes are even
The degree of its one node is odd
It is connected and the degrees of all nodes are even

16. The design consists of 30 transistors of different widths. Two groups by 15 and 8 transistors from this
design are chosen. In how many ways can this selection be made such that the width of arbitrary
transistor from the first group will be less than width of arbitrary transistor from the second group?

A.

23
A30

B.
C.

30 23

D.
E.

23
C 30

2330
15
A38

17. What is channel length modulation in a small signal model of a MOS transistor presented by?

A.
B.
C.
D.
E.

Current controlled current source

Voltage source
Capacitor
Resistor
Current controlled voltage source

18. What is body effect in a small signal model of a MOS transistor presented by?

A.
B.
C.
D.
E.

Current controlled current source

Voltage controlled voltage source
Voltage controlled current source
Resistor
Current controlled voltage source

19. What function is realized by this circuit?

DC

x3

x2

21

22

x1

A.
B.
C.
D.
E.

1
2
3
4
5
6
7
8

0
1
2
3
4
5
6
7

1
7
3
2
5
8
6
4

0
1
2
3
4
5
6
7

CD
20
21

22

Y= x1x3+ x1x2
Y= x1x2 + x2x3 +x1x2
Y= x1x2 + x1x3 +x1x2
Y= x1x2 + x2x3 + x1
None of the above

20. The number A is represented in memory in floating point form (IEEE 754 standard) and is equal to
40C0 0000 (hexadecimal system). Which of the mentioned numbers corresponds to the given A
number?

A.
B.
C.
D.
E.

6
10
35
20
None of the above

21. For the circuit shown below determine the operating mode if VT0=0.4V.

0.2V

1.2V

0.0V

A.
B.
C.
D.
E.

Cut-off
Linear
Tetrode
Non-linear
Saturation

22. For the circuit shown below determine the steady state voltage across the capacitor. Assume the
capacitor was initially discharged and VT0=0.4V.
1V

1.2V

A.
B.
C.
D.
E.

0.4V
1.2V
0.8V
1.0V
0.6V

23. The II phase of diffusion (deposition) provides:

A.
B.
C.
D.
E.

High surface concentration and large depth of impurities

High surface concentration and shallow depth of impurities
Low surface concentration and large depth of impurities
Low surface concentration and shallow depth of impurities
Low surface concentration of impurities

24. The gradual channel approximation for the MOS transistors model is conditioned by: (E x is a vertical
electric field component in the channel, Ey is a lateral electric field component, L channel length, tox
gate oxide thickness)

A.
B.
C.
D.
E.

Ex << Ey
Ex >> Ey
EyL = Ex tox
EyL >> Ex tox
Eytox = ExL

25. What does the gate-substrate workfunction of a MOS transistor depend on?

A.
B.
C.
D.
E.

The gate material and the gate oxide thickness

The gate material and the oxide charge
The positive or negative bias applied to the gate electrod
The gate material and the substrate doping
The substrate doping and the electric field in the channel

26. Given is the following numerical integration formula (Adam-Bashford):

x( 4) x( 3)

55
59
37
9
t x ( 3) t x ( 2)
t x ( 1) t x ()
24
24
24
24

Which of the following properties does this method have?

A.
B.
C.
D.
E.

Implicit
Explicit
Three-step method
Four-step method
B and D variants are correct

27. Find input impedance ratio Zi(C)/ Zi(C=0) of the shown circuit if Re=8k, hie=3k, hre=0, hoe=20S,
and =50>>1.

Rc = Re
Ii

Q1

Zi=Vi/Ii

Q2

Vi
Re
0
A.
B.
C.
D.
E.

Zi(C)/ Zi(C=0)=0.5
Zi(C)/ Zi(C=0)=4.05
Zi(C)/ Zi(C=0)=0.56
Zi(C)/ Zi(C=0)= 1.014
Zi(C)/ Zi(C=0)=2

28. An NMOS transistor starts to conduct when:

A.
B.
C.
D.
E.

The potential difference between the drain and the source terminals is higher than the threshold
voltage Vt
The potential difference between the gate and the source terminals is higher than the threshold
voltage Vt
The potential difference between the gate and the drain terminals is higher than the threshold
voltage Vt
The potential difference between the drain and the base terminals is higher than the threshold
voltage Vt
None of the above

29. The drain induced barrier lowering happens because of:

A.
B.
C.
D.
E.

High gate voltage in an NMOS device

High drain voltage that contributes in reducing the threshold voltage
The decrease in current in the channel due to high drain voltage
All of the above
None of the above

30. The static power is affected by many factors in CMOS ICs, some of these factors are:

A.

Temperature, threshold voltage, and supply voltage

B.
C.
D.
E.

The activity factor at which the circuit is switching, supply voltage, and threshold voltage
The capacitive load of the circuit, switching activity, and supply voltage
The temperature, the switching activity, and the variability in the threshold voltage
None of the above

Answer Sheet

1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.

Participant

16.
17.
18.
19.
20.
21.
22.
23.
24.
25.
26.
27.
28.
29.
30.

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