Si1551DL

Vishay Siliconix

Complementary 20-V (D-S) MOSFET

PRODUCT SUMMARY
VDS (V)
N-Channel

rDS(on) (W)

ID (A)

1.9 @ VGS = 4.5 V

0.30

3.7 @ VGS = 2.7 V

0.22

4.2 @ VGS = 2.5 V

0.21

0.995 @ VGS = 4.5 V

0.44

1.600 @ VGS = 2.7 V

0.34

1.800 @ VGS = 2.5 V

0.32

20

P-Channel

20

Qg (Typ)
0.72

0.52

SOT-363
SC-70 (6-LEADS)
S1

D1

G1

G2

D2

S2

RD

XX

YY

Marking Code

Lot Traceability
and Date Code
Part # Code

Top View
Ordering Information: Si1551DL-T1
Si1551DL-T1E3 (Lead (Pb)-Free)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

N-Channel
Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain Current (TJ = 150_C)a

TA = 25_C
TA = 85_C

Pulsed Drain Current

ID

5 secs

IS
TA = 25_C

Maximum Power Dissipationa

TA = 85_C

Operating Junction and Storage Temperature Range

PD

Steady State

5 secs

20

Steady State

Unit

20

"12
0.30

0.29

0.44

0.22

0.21

0.31

IDM

Continuous Source Current (Diode Conduction)a

P-Channel

0.6

0.41
0.30

0.25

0.23

0.25

0.23

0.30

0.27

0.30

0.27

0.16

0.14

0.16

0.14

TJ, Tstg

1.0

55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)

Symbol
t v 5 sec
Steady State
Steady State

RthJA
RthJF

Typical

Maximum

360

415

400

460

300

350

Unit

_C/W
C/W

Notes
a. Surface Mounted on 1 x 1 FR4 Board.
Document Number: 71255
S-42353Rev. C, 20-Dec-04

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Si1551DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static
Gate Threshold Voltage

Gate Body Leakage

Gate-Body

Zero Gate Voltage Drain Current

On State Drain Currenta

On-State

Drain Source On-State

Drain-Source
On State Resistancea

Forward Transconductancea

Diode Forward Voltagea

VGS(th)

IGSS

IDSS

ID(on)
D( )

rDS(on)
DS( )

gfs
f
VSD

VDS = VGS, ID = 250 mA

N-Ch

0.6

1.5

VDS = VGS, ID = 250 mA

P-Ch

0.6

1.5

VDS = 0 V,
V VGS = "12 V

N-Ch

"100

P-Ch

"100

VDS = 20 V, VGS = 0 V

N-Ch

VDS = 20 V, VGS = 0 V

P-Ch

VDS = 20 V, VGS = 0 V, TJ = 85_C

N-Ch

VDS = 20 V, VGS = 0 V, TJ = 85_C

P-Ch

VDS w 5 V, VGS = 4.5 V

N-Ch

0.6

VDS p 5 V, VGS = 4.5 V

P-Ch

1.0

nA

mA

5
A

VGS = 4.5 V, ID = 0.29 A

N-Ch

1.55

1.9

VGS = 4.5 V, ID = 0.41 A

P-Ch

0.850

0.995

VGS = 2.7 V, ID = 0.1 A

N-Ch

2.8

3.7

VGS = 2.7 V, ID = 0.25 A

P-Ch

1.23

1.600

VGS = 2.5 V, ID = 0.1 A

N-Ch

3.0

4.2

VGS = 2.5 V, ID = 0.25 A

P-Ch

1.4

1.800

VDS = 10 V, ID = 0.29 A

N-Ch

0.3

VDS = 10 V, ID = 0.41 A

P-Ch

0.8

IS = 0.23 A, VGS = 0 V

N-Ch

0.8

1.2

IS = 0.23 A, VGS = 0 V

P-Ch

0.8

1.2

N-Ch

0.72

1.5
1.8

Dynamicb
Total Gate Charge

Qg

Gate Source Charge

Gate-Source

Qgs

Gate Drain Charge

Gate-Drain

Qgdd

Turn On Delay Time

Turn-On

Rise Time

Turn Off Delay Time

Turn-Off

Fall Time
Source-Drain
Reverse Recovery Time

N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 0.29 A
P-Channel
VDS = 10
10 V
V, VGS = 4.5
45V
V, ID = 0.41
0 41 A

td(on)
d( )

P-Ch

0.52

N-Ch

0.22

P-Ch

0.11

N-Ch

0.13

P-Ch

0.14

N-Ch

23

40

nC

P-Ch

7.5

15

tr

N-Channel
VDD = 10 V, RL = 20 W
ID ^ 0.5 A, VGEN = 4.5 V, Rg = 6 W

N-Ch

30

60

P-Ch

20

40

td(off)
d( ff)

P-Channel
VDD = 10
10 V,
V RL = 20 W
ID ^ 0.5
0.5 A, VGEN = 4.5
4.5 V, Rg = 6 W

N-Ch

10

20

P-Ch

8.5

17

N-Ch

15

30

P-Ch

12

24

IF = 0.23 A, di/dt = 100 A/ms

N-Ch

20

40

IF = 0.23 A, di/dt = 100 A/ms

P-Ch

25

40

tf
trr

ns

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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Document Number: 71255

S-42353Rev. C, 20-Dec-04

Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

NCHANNEL

Output Characteristics

Transfer Characteristics

0.6

0.6
VGS = 5 thru 3.5 V

0.5

TC = 55_C

0.5
I D Drain Current (A)

I D Drain Current (A)

3V
0.4
0.3

2.5 V

0.2
2V
0.1

25_C

0.4
0.3

125_C
0.2
0.1

1.5 V
0.0
0.0

0.5

1.0

1.5

2.0

2.5

0.0
0.0

3.0

0.5

VDS Drain-to-Source Voltage (V)

1.0

On-Resistance vs. Drain Current

2.5

3.0

3.5

4.0

Capacitance
100

5
C Capacitance (pF)

r DS(on) On-Resistance ( W )

2.0

VGS Gate-to-Source Voltage (V)

1.5

VGS = 2.5 V
VGS = 2.7 V

3
VGS = 4.5 V

80
Ciss

60

40
Coss
20

Crss
0
0.0

0
0.1

0.2

0.3

0.4

0.5

0.6

ID Drain Current (A)

Gate Charge

16

20

On-Resistance vs. Junction Temperature

1.8

VDS = 10 V
ID = 0.29 A

1.6

4
rDS(on) On-Resiistance
(Normalized)

V GS Gate-to-Source Voltage (V)

12

VDS Drain-to-Source Voltage (V)

0
0.0

VGS = 4.5 V
ID = 0.29 A

1.4
1.2
1.0
0.8

0.2

0.4

0.6

Qg Total Gate Charge (nC)

Document Number: 71255

S-42353Rev. C, 20-Dec-04

0.8

0.6
50

25

25

50

75

100

125

150

TJ Junction Temperature (_C)

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Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

NCHANNEL

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

6

r DS(on) On-Resistance ( W )

I S Source Current (A)

TJ = 150_C

TJ = 25_C

5
4

ID = 0.29 A

3
2
1
0

0.1
0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD Source-to-Drain Voltage (V)

Threshold Voltage

Single Pulse Power

0.2

0.1

ID = 250 mA

0.0

Power (W)

V GS(th) Variance (V)

VGS Gate-to-Source Voltage (V)

0.1

0.2

0.3
50

25

25

50

75

100

125

150

0
103

102

101

TJ Temperature (_C)

10

100

600

Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Effective Transient

Thermal Impedance

2
1

Duty Cycle = 0.5

0.2
Notes:

0.1
0.1

PDM

0.05

t1

0.02

t2
1. Duty Cycle, D =

t1
t2
2. Per Unit Base = RthJA =400_C/W
3. TJM TA = PDMZthJA(t)

Single Pulse

4. Surface Mounted

0.01
104

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103

102

101
1
Square Wave Pulse Duration (sec)

10

100

600

Document Number: 71255

S-42353Rev. C, 20-Dec-04

Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

NCHANNEL

Normalized Thermal Transient Impedance, Junction-to-Foot

Normalized Effective Transient

Thermal Impedance

2
1

Duty Cycle = 0.5

0.2
0.1
0.1

0.05
0.02

Single Pulse
0.01
104

103

102
101
Square Wave Pulse Duration (sec)

10

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

PCHANNEL

Output Characteristics

Transfer Characteristics

1.0

1.0
VGS = 5 thru 3 V
0.8

2.5 V
I D Drain Current (A)

I D Drain Current (A)

0.8

TC = 55_C

0.6

0.4

2V

0.2

0.6
125_C
0.4

0.2
1V

0.0
0.0

25_C

0.5

1.0

1.5 V

1.5

2.0

2.5

0.0
0.0

3.0

0.5

VDS Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

VGS = 2.5 V

1.5

VGS = 2.7 V
VGS = 4.5 V

1.0

2.0

2.5

3.0

Capacitance

100

2.5
2.0

1.5

VGS Gate-to-Source Voltage (V)

C Capacitance (pF)

r DS(on) On-Resistance ( W )

3.0

1.0

80

Ciss

60

40
Coss
20

0.5

Crss
0.0
0.0

0
0.2

0.4

0.6

ID Drain Current (A)

Document Number: 71255
S-42353Rev. C, 20-Dec-04

0.8

1.0

12

16

20

VDS Drain-to-Source Voltage (V)

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Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

PCHANNEL

Gate Charge

On-Resistance vs. Junction Temperature

1.6

VDS = 10 V
ID = 0.41 A

VGS = 4.5 V
ID = 0.41 A

rDS(on) On-Resiistance
(Normalized)

V GS Gate-to-Source Voltage (V)

0
0.0

1.4

1.2

1.0

0.8

0.1

0.2

0.3

0.4

0.5

0.6
50

0.6

25

Qg Total Gate Charge (nC)

100

125

150

On-Resistance vs. Gate-to-Source Voltage

r DS(on) On-Resistance ( W )

I S Source Current (A)

TJ = 150_C

TJ = 25_C

2.5
2.0

ID = 0.41 A

1.5
1.0
0.5
0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD Source-to-Drain Voltage (V)

VGS Gate-to-Source Voltage (V)

Threshold Voltage

Single Pulse Power

0.4

0.3

4
ID = 250 mA

0.2
Power (W)

V GS(th) Variance (V)

75

3.0

0.1

0.0
1

0.1
0.2
50

25

25

50

75

TJ Temperature (_C)

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50

TJ Junction Temperature (_C)

Source-Drain Diode Forward Voltage

0.1
0.0

25

100

125

150

0
103

102

101

10

100

600

Time (sec)

Document Number: 71255

S-42353Rev. C, 20-Dec-04

Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

PCHANNEL

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Effective Transient

Thermal Impedance

2
1

Duty Cycle = 0.5

0.2
Notes:

0.1
0.1

PDM

0.05

t1

0.02

t2
1. Duty Cycle, D =

t1
t2
2. Per Unit Base = RthJA = 400_C/W
3. TJM TA = PDMZthJA(t)

Single Pulse

4. Surface Mounted

0.01
104

103

102

101
1
Square Wave Pulse Duration (sec)

10

100

600

Normalized Thermal Transient Impedance, Junction-to-Foot

2

Normalized Effective Transient

Thermal Impedance

Duty Cycle = 0.5

0.2
0.1
0.1

0.05
0.02

Single Pulse
0.01
104

103

102
101
Square Wave Pulse Duration (sec)

10

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?71255.
Document Number: 71255
S-42353Rev. C, 20-Dec-04

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Document Number: 91000

Revision: 18-Jul-08

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1