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2013
Q. 1
ONE MARK
In a forward biased pn junction diode, the sequence of events that best describes
the mechanism of current flow is
(A) injection, and subsequent diffusion and recombination of minority carriers
(B) injection, and subsequent drift and generation of minority carriers
(C) extraction, and subsequent diffusion and generation of minority carriers
A
P
&
IA
2013
Q. 4
TWO MARKS
The small-signal resistance (i.e., dVB /dID ) in kW offered by the n-channel MOSFET
M shown in the figure below, at a bias point of VB = 2 V is (device data for
M: device transconductance parameter kN = mn C 0' x ^W/L h = 40 mA/V2 , threshold
voltage VTN = 1 V , and neglect body effect and channel length modulation effects)
(A) 12.5
(B) 25
(C) 50
(D) 100
*Maximum Discount*
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2012
Q. 5
Q. 6
TWO MARKS
The source of a silicon (ni = 1010 per cm3) n -channel MOS transistor has an area
of 1 sq mm and a depth of 1 mm . If the dopant density in the source is 1019 /cm3 ,
the number of holes in the source region with the above volume is approximately
(B) 100
(A) 107
(D) 0
(C) 10
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In the CMOS circuit shown, electron and hole mobilities are equal, and M1 and
M2 are equally sized. The device M1 is in the linear region if
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In the three dimensional view of a silicon n -channel MOS transistor shown below,
d = 20 nm . The transistor is of width 1 mm . The depletion width formed at every
p-n junction is 10 nm. The relative permittivity of Si and SiO 2 , respectively, are
11.7 and 3.9, and e0 = 8.9 # 10-12 F/m .
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Q. 7
Q. 8
(D) 7 pF
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2011
ONE MARK
Q. 9
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(D) both the electric field and the carrier concentration gradient
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Q. 10
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Q. 11
(B) decreases by 60 mV
(C) increases by 25 mV
(D) decreases by 25 mV
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2011
TWO MARKS
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a
The channel resistance of an N-channel JFET shown in the figure below is 600 W
when the full channel thickness (tch ) of 10 m is available for conduction. The
built-in voltage of the gate P+ N junction (Vbi ) is - 1 V . When the gate to source
voltage (VGS ) is 0 V, the channel is depleted by 1 m on each side due to the built
in voltage and hence the thickness available for conduction is only 8 m
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Q. 12
Q. 13
*Maximum Discount*
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2010
ONE MARK
Q. 14
At room temperature, a possible value for the mobility of electrons in the inversion
layer of a silicon n -channel MOSFET is
(A) 450 cm2 / V-s
(B) 1350 cm2 / V-s
(D) 3600 cm2 / V-s
(C) 1800 cm2 / V-s
Q. 15
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2010
Q. 16
Q. 17
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TWO MARKS
In a uniformly doped BJT, assume that NE , NB and NC are the emitter, base and
collector doping in atoms/cm3 , respectively. If the emitter injection efficiency of
the BJT is close unity, which one of the following condition is TRUE
(A) NE = NB = NC
(B) NE >> NB and NB > NC
(C) NE = NB and NB < NC
(D) NE < NB < NC
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Compared to a p-n junction with NA = ND = 1014 /cm3 , which one of the following
statements is TRUE for a p-n junction with NA = ND = 1020 /cm3 ?
(A) Reverse breakdown voltage is lower and depletion capacitance is lower
(B) Reverse breakdown voltage is higher and depletion capacitance is lower
(C) Reverse breakdown voltage is lower and depletion capacitance is higher
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The silicon sample with unit cross-sectional area shown below is in thermal
equilibrium. The following information is given: T = 300 K electronic charge
= 1.6 # 10-19 C , thermal voltage = 26 mV and electron mobility = 1350 cm2 / V-s
Q. 18
Q. 19
The magnitude of the electron of the electron drift current density at x = 0.5 mm
is
(B) 1.08 # 10 4 A/m2
(A) 2.16 # 10 4 A/cm2
(C) 4.32 # 103 A/cm2
(D) 6.48 # 102 A/cm2
*Maximum Discount*
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2009
ONE MARK
In an n-type silicon crystal at room temperature, which of the following can have
a concentration of 4 # 1019 cm - 3 ?
(A) Silicon atoms
(B) Holes
Q. 20
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The ratio of the mobility to the diffusion coefficient in a semiconductor has the
units
(A) V - 1
(B) cm.V1
(C) V.cm - 1
(D) V.s
Q. 21
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TWO MARKS
Consider the following two statements about the internal conditions in a n channel MOSFET operating in the active region.
S1 : The inversion charge decreases from source to drain
S2 : The channel potential increases from source to drain.
Which of the following is correct?
(A) Only S2 is true
(B) Both S1 and S2 are false
Q. 22
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Q. 23
Q. 24
*Maximum Discount*
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2008
Q. 25
ONE MARK
Q. 26
Q. 27
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K (VGS - VT ) 2
VDS
(B) 2K (VGS - VT )
(C)
Id
VGS - VDS
(D)
TWO MARKS
Q. 30
K (VGS - VT ) 2
VGS
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Q. 29
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Q. 31
(A) 4
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1 - 2/Vp
(C) e
o
1 - 1/2Vp
Q. 32
ELECTRONIC DEVICES
1 - 2/Vp
(B) 1 e
2 1 - 1/2Vp o
1 - (2 - Vp )
(D)
1 - [1 (2 Vp )]
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Q. 34
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The electron and hole concentrations in an intrinsic semiconductor are ni per cm3
at 300 K. Now, if acceptor impurities are introduced with a concentration of NA
per cm3 (where NA >> ni , the electron concentration per cm3 at 300 K will be)
(A) ni
(B) ni + NA
2
(C) NA - ni
(D) ni
NA
+
In a p n junction diode under reverse biased the magnitude of electric field is
maximum at
(A) the edge of the depletion region on the p-side
(B) the edge of the depletion region on the n -side
(C) the p+ n junction
(D) the centre of the depletion region on the n -side
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Q. 35
ONE MARK
TWO MARKS
Group I lists four types of p - n junction diodes. Match each device in Group I
with one of the option in Group II to indicate the bias condition of the device in
its normal mode of operation.
Group - I
Group-II
(P) Zener Diode
(1) Forward bias
*Maximum Discount*
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(B) P - 2, Q - 1, R - 1, S - 2
(C) P - 2, Q - 2, R - 1, S- -2
(D) P - 2, Q - 1, R - 2, S - 2
Q. 36
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Group I lists four different semiconductor devices. match each device in Group I
with its charactecteristic property in Group II
Group-I
Group-II
(P) BJT
(1) Population iniversion
(Q) MOS capacitor
(2) Pinch-off voltage
(R) LASER diode
(3) Early effect
(S) JFET
(4) Flat-band voltage
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(A) P - 3, Q - 1, R - 4, S - 2
(B) P - 1, Q - 4, R - 3, S - 2
(C) P - 3, Q - 4, R - 1, S - 2
(D) P - 3, Q - 2, R - 1, S - 4
Q. 37
Q. 38
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(D) 12 mm
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The DC current gain (b) of a BJT is 50. Assuming that the emitter injection
efficiency is 0.995, the base transport factor is
(A) 0.980
(B) 0.985
(C) 0.990
(D) 0.995
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Q. 39
*Maximum Discount*
Q. 40
ELECTRONIC DEVICES
Q. 41
(D) 1.143 mm
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S2 : If positive charges are introduced in the oxide, the C - V polt will shift to
the left.
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The values of voltage (VD) across a tunnel-diode corresponding to peak and valley
currents are Vp, VD respectively. The range of tunnel-diode voltage for VD which
the slope of its I - VD characteristics is negative would be
(A) VD < 0
(B) 0 # VD < Vp
(C) Vp # VD < Vv
(D) VD $ Vv
Q. 43
ONE MARK
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Q. 44
Under low level injection assumption, the injected minority carrier current for an
extrinsic semiconductor is essentially the
(A) Diffusion current
(B) Drift current
(C) Recombination current
(D) Induced current
Q. 45
2006
Q. 46
TWO MARKS
In the circuit shown below, the switch was connected to position 1 at t < 0 and
at t = 0 , it is changed to position 2. Assume that the diode has zero voltage drop
and a storage time ts . For 0 < t # ts, vR is given by (all in Volts)
*Maximum Discount*
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(A) vR =- 5
(C) 0 # vR < 5
Q. 47
Q. 48
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(B) vR =+ 5
(D) - 5 # vR < 0
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(A) E - 4, F - 2, G - 1, H - 3
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(B) E - 3, F - 4, G - 1, H - 3
(C) E - 2, F - 4, G - 1, H - 2
(D) E - 1, F - 3, G - 2, H - 4
Q. 49
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ONE MARK
Q. 50
Q. 51
Q. 52
(D) 60 pA
The primary reason for the widespread use of Silicon in semiconductor device
technology is
(A) abundance of Silicon on the surface of the Earth.
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Q. 53
Q. 54
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(C) 1 mF
Q. 55
(D) 20 mF
A MOS capacitor made using p type substrate is in the accumulation mode. The
dominant charge in the channel is due to the presence of
(A) holes
(B) electrons
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TWO MARKS
For an n -channel MOSFET and its transfer curve shown in the figure, the
threshold voltage is
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2004
Q. 57
The impurity commonly used for realizing the base region of a silicon n - p - n
transistor is
(A) Gallium
(B) Indium
(C) Boron
Q. 58
ONE MARK
(D) Phosphorus
If for a silicon npn transistor, the base-to-emitter voltage (VBE ) is 0.7 V and the
collector-to-base voltage (VCB) is 0.2 V, then the transistor is operating in the
(A) normal active mode
(B) saturation mode
(C) inverse active mode
*Maximum Discount*
Q. 59
ELECTRONIC DEVICES
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Assuming VCEsat = 0.2 V and b = 50 , the minimum base current (IB) required to
drive the transistor in the figure to saturation is
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(A) 56 mA
(C) 60 mA
2004
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(B) 140 mA
(D) 3 mA
TWO MARKS
Q. 62
Q. 63
*Maximum Discount*
Q. 64
ELECTRONIC DEVICES
Consider an abrupt p - n junction. Let Vbi be the built-in potential of this junction
and VR be the applied reverse bias. If the junction capacitance (Cj ) is 1 pF for
Vbi + VR = 1 V, then for Vbi + VR = 4 V, Cj will be
(A) 4 pF
(B) 2 pF
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(C) 0.25 pF
Q. 65
(D) 0.5 pF
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Q. 67
The drain of an n-channel MOSFET is shorted to the gate so that VGS = VDS . The
threshold voltage (VT ) of the MOSFET is 1 V. If the drain current (ID) is 1 mA
for VGS = 2 V, then for VGS = 3 V, ID is
(A) 2 mA
(B) 3 mA
(C) 9 mA
(D) 4 mA
(C) 0.854 eV
(D) 0.706 eV
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(B) 0.886 eV
Q. 68
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The longest wavelength that can be absorbed by silicon, which has the bandgap
of 1.12 eV, is 1.1 mm. If the longest wavelength that can be absorbed by another
material is 0.87 mm, then bandgap of this material is
(A) 1.416 A/cm 2
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The neutral base width of a bipolar transistor, biased in the active region, is
0.5 mm. The maximum electron concentration and the diffusion constant in
the base are 1014 / cm 3 and Dn = 25 cm 2 /sec respectively. Assuming negligible
recombination in the base, the collector current density is (the electron charge is
1.6 # 10 - 19 Coulomb)
(A) 800 A/cm 2
(B) 8 A/cm 2
(D) 2 A/cm 2
2003
ONE MARK
Q. 69
Q. 70
(B) 1.10 eV
(D) 0.67 eV
*Maximum Discount*
Q. 71
ELECTRONIC DEVICES
Q. 72
Q. 73
Choose proper substitutes for X and Y to make the following statement correct
Tunnel diode and Avalanche photo diode are operated in X bias ad Y bias
respectively
(A) X: reverse, Y: reverse
(B) X: reverse, Y: forward
(C) X: forward, Y: reverse
(D) X: forward, Y: forward
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(D) increase
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TWO MARKS
An n -type silicon bar 0.1 cm long and 100 mm2 i cross-sectional area has a
majority carrier concentration of 5 # 1020 /m 2 and the carrier mobility is 0.13
m2 /V-s at 300 K. If the charge of an electron is 1.5 # 10 - 19 coulomb, then the
resistance of the bar is
(B) 10 4 Ohm
(A) 106 Ohm
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(C) 10 - 1 Ohm
Q. 75
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(D) 3.00 # 10 - 5 /m 3
(D) 10 - 4 Ohm
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*Maximum Discount*
Q. 77
ELECTRONIC DEVICES
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(C) 4 # 103
Q. 78
(D) 8 # 103
A particular green LED emits light of wavelength 5490 Ac. The energy bandgap
of the semiconductor material used there is
(Planks constant = 6.626 # 10 - 34 J - s )
(A) 2.26 eV
(B) 1.98 eV
(C) 1.17 eV
Q. 79
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(D) 0.74 eV
(C) 3.5 mA
Q. 80
Q. 81
(D) 4.0 mA
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ONE MARK
In the figure, silicon diode is carrying a constant current of 1 mA. When the
temperature of the diode is 20cC, VD is found to be 700 mV. If the temperature
rises to 40cC, VD becomes approximately equal to
(A) 740 mV
(C) 680 mV
(B) 660 mV
(D) 700 mV
*Maximum Discount*
Q. 83
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Q. 84
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1999
Q. 86
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ONE MARK
TWO MARKS
Q. 87
Q. 88
*Maximum Discount*
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1998
Q. 89
Q. 90
ONE MARK
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(A) fT =
Q. 91
2p (C p + C m)
gm
gm
(D) fT =
2p (C p + C m)
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(B) fT =
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(C) I vs log V
Q. 92
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(D) I vs V
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Q. 94
Two identical FETs, each characterized by the parameters gm and rd are connected
in parallel. The composite FET is then characterized by the parameters
g
g
(A) m and 2rd
(B) m and rd
2
2
2
(C) 2gm and rd
(D) 2gm and 2rd
2
q
The units of
are
kT
(A) V
(B) V-1
(C) J
(D) J/K
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Q. 95
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ONE MARK
(D) surface potential is positive and equal to twice the Fermi potential
Q. 96
The intrinsic carrier density at 300 K is 1.5 # 1010 /cm3 , in silicon. For n -type
silicon doped to 2.25 # 1015 atoms/cm3 , the equilibrium electron and hole densities
are
(A) n = 1.5 # 1015 /cm3, p = 1.5 # 1010 /cm3
(B) n = 1.5 # 1010 /cm3, p = 2.25 # 1015 /cm3
(C) n = 2.25 # 1015 /cm3, p = 1.0 # 1015 /cm3
*Maximum Discount*
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ONE MARK
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If a transistor is operating with both of its junctions forward biased, but with the
collector base forward bias greater than the emitter base forward bias, then it is
operating in the
(A) forward active mode
(B) reverse saturation mode
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Q. 100
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A n -channel silicon (Eg = 1.1 eV) MOSFET was fabricated using n +poly-silicon
gate and the threshold voltage was found to be 1 V. Now, if the gate is changed
to p+ poly-silicon, other things remaining the same, the new threshold voltage
should be
(A) - 0.1 V
(B) 0 V
(C) 1.0 V
(D) 2.1 V
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Q. 101
Q. 102
An npn transistor has a beta cut-off frequency fb of 1 MHz and common emitter
short circuit low-frequency current gain bo of 200 it unity gain frequency fT and
the alpha cut-off frequency fa respectively are
(A) 200 MHz, 201 MHz
(B) 200 MHz, 199 MHz
(C) 199 MHz, 200 MHz
(D) 201 MHz, 200 MHz
*Maximum Discount*
Q. 103
ELECTRONIC DEVICES
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SOLUTIONS
Sol. 1
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Sol. 2
Sol. 3
Sol. 4
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VB = 2V
VTN = 1V
So, we have
Drain voltage
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VD = 2 volt
VG = 2 volt
VS = 0 (Ground)
Therefore,
VGS = 2 > VTN
and
VDS = 2 > VGS - VTN
So, the MOSFET is in the saturation region. Therefore, drain current is
ID = kN ^VGS - VTN h2
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2
or,
ID = kN ^VB - 1h
Differentiating both side with respect to ID
1 = kN 2 ^VB - 1hdVB
dID
Since,
VBQ = 2 volt (at D.C. Voltage)
Hence, we obtain
dVB =
1
1
=
dID
2kN ^VB - 1h
2 # 40 # 10-6 # ^2 - 1h
= 12.5 # 103 W = 12.5 kW
Sol. 5
n 0 p 0 = n i2
2
20
p 0 = n i = 1019 = 10 per cm3
n 0 10
V = Area # depth = 1 mm2 # 1 mm
= 10-8 cm2 # 10-4 cm = 10-12 cm3
*Maximum Discount*
ELECTRONIC DEVICES
p = p 0 # V = 10 # 10-12 = 10-11
Which is approximately equal to zero.
Sol. 6
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mn = mp
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&
&
For
So,
So for the NMOS
I1 = 0 , VD = 5 V
Vin = 5 + 3 = 4 V
2
I1 = I 2
mp COX W
mn COX W
2
2
2 (VSG - VTp) VSD - V SD
@ = 2 L (VGS - VTn)
2 L6
&
&
2
2 (VSG - VTp) VSD - V SD
= (VGS - VTn) 2
2 (5 - Vin - 1) (5 - VD) - (5 - VD) 2 = (Vin - 0 - 1) 2
&
2 (4 - Vin) (5 - VD) - (5 - VD) 2 = (Vin - 1) 2
Substituting VD = VDS = VGS - VTn and for N -MOS & VD = Vin - 1
&
*Maximum Discount*
ELECTRONIC DEVICES
48 - 36 - 8Vin =- 2Vin + 1
6Vin = 11
&
Vin = 11 = 1.833 V
6
So for M2 to be in saturation Vin < 1.833 V or Vin < 1.875 V
&
&
Sol. 7
in
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.
a
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-9
-6
-12
= 20 # 10 # 1 # 10 #-93.9 # 8.9 # 10
= 0.69 # 10-15 F
1 # 10
Sol. 8
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= 0.68 mm2
d = 10 nm (depletion width of all junction)
-12
8.9 # 10-12 = 7 10-15 F
Cs = 0.68 # 10 # 11.7 -#
#
10 # 10 9
Sol. 9
Sol. 10
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Sol. 11
Sol. 12
...(1)
where b = a c1 -
VGS
Vp m
...(2)
*Maximum Discount*
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Vp = 1012 # (5 # 10-6) 2
Vp =- 25 V
or
.
a
At VGS =- 3 V ;
i
d
- 3 mm = 3.26 mm
- 25 l
rL
rL
a = 600
5
=
rl =
# 3.26 = 917 W
W # b Wa # b
b = 5 b1 -
Sol. 13
Sol. 14
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b = 4 mm
rL
a = 600 5 = 750 W
rl =
#4
Wa # b
in
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Sol. 15
Sol. 16
Sol. 17
since 2b = 8 mm
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Thus
C \ NA ND
Depletion capacitance increases as concentration increases
Sol. 18
*Maximum Discount*
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1 = 10 kV/cm
1 mm
Option (A) is correct.
Electron drift current density
E =
Sol. 19
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Sol. 21
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2
Unit of mobility mn is = cm
V. sec
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2
Unit of diffusion current Dn is = cm
sec
2
2
m
Thus unit of n is
= cm / cm = 1 = V-1
V $ sec sec V
Dn
Sol. 22
Sol. 23
in
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NA WP = ND WN
17
-6
NA = ND WN = 1 # 10 # 0.1-6# 10 = 1 # 1016
WP
1 # 10
or
.
a
D
Vbi = VT 1nc NA N
n i2 m
17
16
# 10 = 0.760
= 26 # 10-3 ln e 1 # 10 # 1 10
o
2
(1.4 # 10 )
Sol. 24
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Sol. 25
Sol. 26
Sol. 27
*Maximum Discount*
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Sol. 28
Sol. 29
Sol. 30
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VD = constant
gm \ (VGS - VT )
As
Thus
.
a
E2 - E1 = kT ln NA
ni
i
d
NA = 4 # 1017
ni = 1.5 # 1010
o
n
17
E2 - E1 = 25 # 10-3 e ln 4 # 10 10 = 0.427 eV
1.5 # 10
Hence fermi level goes down by 0.427 eV as silicon is doped with boron.
Sol. 31
.
w
2
VP = eW ND
es
VP = VP1
VP1 = W12 = W2
Now
VP2
W22 (2W) 2
or
4VP1 = VP2
Initial transconductance
gm = Kn ;1 - Vbi - VGS E
Vp
Let
.
a
gm1 = Kn =1 -
i
d
no
gm2 = Kn =1 -
Dividing
Hence
.
w
Sol. 32
Sol. 33
in
.
co
0 - (- 2)
= Kn ;1 VP1 G
0 - (- 2)
= K2 ;1 VP2 G
2
VP1 E
2
4VP1 E
1 - 2/VP1
gm1
=f
p
gm2
1 - 1/ (2VP1)
VP = VP1
np = ni2
If acceptor impurities are introduces
Thus
p = NA
nNA = ni2
2
n = ni
NA
or
Sol. 34
Sol. 35
*Maximum Discount*
ELECTRONIC DEVICES
Zener diode and Avalanche diode works in the reverse bias and laser diode works
in forward bias.
In solar cell diode works in forward bias but photo current is in reverse direction.
Thus
in
.
co
.
a
i
d
o
n
.
w
.
a
i
d
Sol. 37
o
n
.
w
in
.
co
W = K V + VR
Now
2m = K 0.8 + 1.2
From above two equation we get
or
Sol. 38
0.8 + 7.2 =
0.8 + 1.2
W2 = 4 m m
W =
2m
8 =2
2
b
= 50 = 50
b + 1 50 + 1
51
*Maximum Discount*
Sol. 39
Sol. 40
ELECTRONIC DEVICES
in
.
co
.
a
i
d
o
n
.
w
When applied voltage is 0 volts, there will be no depletion region and we get
C1 = 7 pF
When applied voltage is V , a depletion region will be formed as shown in fig an
i
d
.
a
o
n
.
w
in
.
co
- 12
-4
= 1 # 710 #- 1210 = 6 # 10 - 4 cm
7
6 # 10
= 0.857 mm
Sol. 41
Sol. 42
*Maximum Discount*
Sol. 43
ELECTRONIC DEVICES
in
.
co
.
a
np = ni2
np = Constant
p \ 1
n
i
d
o
n
.
w
Since ni is constant
Sol. 45
Sol. 46
VR =- 5 V
Sol. 47
.
a
o
n
.
w
i
d
Sol. 48
in
.
co
E =- v # B
E = B#v
*Maximum Discount*
ELECTRONIC DEVICES
Ratio is
Sol. 50
in
.
co
mp
mn h
4.2 # 108
=
= 2 # 10 4
1.5 # 10 4 (1 + 0.4)
Option (C) is correct.
For silicon at 0 K,
Eg0 = 1.21 eV
At any temperature
.
a
i
d
o
n
.
w
At T = 300 K,
in
.
co
Sol. 52
Sol. 53
sp = pqmp
sp
m
= p =1
sn
mn
3
Sol. 54
.
a
i
d
sn = nqmn
o
n
.
w
(n = p)
or
C = e0 er A
d
C = e0 er = 8.85 # 10-12 # 11.7 = 10.35 m F
d
A
10 # 10-6
Sol. 55
Sol. 56
Now
and
Since
*Maximum Discount*
ELECTRONIC DEVICES
Sol. 57
Sol. 58
Sol. 59
in
.
co
b = a
1-a
We have
.
a
a -" b a ." b .
If the base width increases, recombination of carrier in base region increases
and a decreases & hence b decreases. If doping in base region increases,
recombination of carrier in base increases and a decreases thereby decreasing b .
Thus S1 is true and S2 is false.
Thus
Sol. 61
Sol. 62
o
n
.
w
Sol. 60
VCC - IC RC - VCE = 0
IC = VCC - VCE = 3 - 0.2 = 2.8 mA
1k
RC
I
IB = C = 2.8m = 56 mA
50
b
or
in
.
co
.
a
i
d
o
n
.
w
=
Sol. 63
i
d
3 m # 1016
= 0.3 m m
9 # 1016
s = nqun
r = 1 = 1
s
nqmn
1
= 1016 /cm 3
n = 1 =
qrmn
1.6 # 10 - 19 # 0.5 # 1250
Thus
Now
or
1
2
*Maximum Discount*
ELECTRONIC DEVICES
Sol. 65
Sol. 66
in
.
co
.
a
ID = K (VGS - VT ) 2
2
IDS = (VGS2 - VT )
Thus
2
IDI
(VGS1 - VT )
Substituting the values we have
o
n
.
w
or
Sol. 67
2
ID2 = (3 - 1) = 4
ID1
(2 - 1) 2
ID2 = 4IDI = 4 mA
Thus
Eg \ 1
l
Eg2
= l1 = 1.1
Eg1
l2
0.87
Eg2 = 1.1 # 1.12 = 1.416 eV
0.87
or
Sol. 68
i
d
.
a
1014
dn =
= 2 # 1018
dx
0.5 # 10 - 4
q = 1.6 # 10 - 19 C
Dn = 25
1014
dn =
dx
0.5 # 10 - 4
JC = qDn dn
dx
i
d
o
n
.
w
in
.
co
Sol. 69
Sol. 70
*Maximum Discount*
ELECTRONIC DEVICES
2
16
.5 # 1016 = 4.5 # 1011
p = ni = 1.5 # 10 # 120
n
5 # 10
Sol. 72
Sol. 73
Sol. 74
i
d
o
n
.
w
0.1 # 10 - 2
= 106 W
5 # 10 # 1.6 # 10 - 19 # 0.13 # 100 # 10 - 12
Option (D) is correct.
=
Sol. 75
.
a
rl
, r = 1 and a = nqun
A
s
R =
We that
in
.
co
Now
20
in
.
co
Sol. 77
.
a
i
d
o
n
.
w
We know that
I = Io `e h V - 1j
where h = 1 for germanium and h = 2 silicon. As per question
VD1
si
Io `e e T - 1j = Io `e hV - 1j
or
Sol. 78
VDsi
VDGe
hV
Ge
Io
=
Io
si
si
VDsi
e hVT
VDGe
e hVT
0.718
- 1 = e 2 # 26 # 10 - 1 = 4 103
#
0.1435
e 26 # 10 - 1
-1
-3
-3
In eV
Alternatively
*Maximum Discount*
ELECTRONIC DEVICES
1.24
Eg = 1.24 eV =
= 2.26 eV
l (mm)
5490 # 10-4 mm
Sol. 79
in
.
co
ID = K (VGS - VT ) 2
2
ID2 = (VGS2 - VT )
Thus
ID1
(VGS1 - VT ) 2
Substituting the values we have
or
Sol. 80
Sol. 81
.
a
2
ID2 = (1.4 - 0.4) = 4
ID1
(0.9 - 0.4) 2
ID2 = 4IDI = 4 mA
i
d
o
n
.
w
in
.
co
From above equation it is clear that the action of a JFET is voltage controlled
current source.
Sol. 82
.
a
i
d
o
n
.
w
3 T = T2 - T1 = 40 - 20 = 20cC
3 VD =- 2.5 # 20 = 50 mV
VD = 700 - 50 = 650 mV
Here
Thus
Therefore,
Sol. 83
Sol. 84
IDS = K (VGS - VT ) 2
Sol. 85
Sol. 86
*Maximum Discount*
ELECTRONIC DEVICES
Sol. 88
Now
or
or
or
.
a
i
d
o
n
Sol. 89
in
.
co
.
w
gm = IC = 1
26
VT
gm
fT =
2p (C p + C m)
1/26
400 =
2p (0.3 # 10-12 + C m)
1
= 15.3 # 10-12
(0.3 # 10-12 + C m) =
2p # 26 # 400
.
a
np = ni pi
Sol. 90
Sol. 91
in
.
co
gm
2p (C p + C m)
o
n
.
w
i
d
or
or
I + 1 = eV/kT
I0
kT log b I + 1l = V
I0
Sol. 93
Sol. 94
Sol. 95
Sol. 96
*Maximum Discount*
ELECTRONIC DEVICES
in
.
co
2
(1.5 # 1010) 2
p = ni =
= 1.0 # 105 /cm3
n
2.25 # 1015
Hole concentration
Sol. 97
Sol. 98
.
a
i
d
o
n
.
w
If both junction are forward biased and collector base junction is more forward
biased then IC will be flowing out wards (opposite direction to normal mode) the
collector and it will be in reverse saturation mode.
Sol. 99
in
.
co
.
a
i
d
o
n
.
w
or
or
Now
or
IE = I 0 (eV /kT - 1)
IE = I 0 eV /kT
VBE = kT ln b IE l
I0
(VBE ) 1 = kT ln b IE 1 l
I0
(VBE ) 2 = kT ln b IE 2 l
I0
(VBE ) 2 - (VBE ) 1 = kT ;ln b IE 2 lE = kT ln b 2IE 1 l
IE 1
IE 1
BE
BE
eV
BE
/kT
>> 1
*Maximum Discount*
ELECTRONIC DEVICES
in
.
co
i
d
o
n
.
w
.
a
***********
.
a
i
d
o
n
.
w
in
.
co
*Maximum Discount*