MJE18008, MJF18008

Switch-mode NPN Bipolar

Power Transistor
For Switching Power Supply Applications
The MJE/MJF18008 have an applications specific stateoftheart
die designed for use in 220 V lineoperated switchmode Power
supplies and electronic light ballasts.

www.onsemi.com

POWER TRANSISTOR
8.0 AMPERES
1000 VOLTS
45 and 125 WATTS

Features

Improved Efficiency Due to Low Base Drive Requirements:

High and Flat DC Current Gain hFE

Fast Switching
No Coil Required in Base Circuit for TurnOff (No Current Tail)
Tight Parametric Distributions are Consistent LottoLot
Two Package Choices: Standard TO220 or Isolated TO220
MJF18008, Case 221D, is UL Recognized at 3500 VRMS: File
#E69369
These Devices are PbFree and are RoHS Compliant*

COLLECTOR
2,4

1
BASE
3
EMITTER

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

CollectorEmitter Sustaining Voltage

VCEO

450

Vdc

CollectorBase Breakdown Voltage

VCES

1000

Vdc

EmitterBase Voltage

VEBO

9.0

Vdc

Collector Current

Continuous

Collector Current

Peak (Note 1)

IC

8.0

Adc

ICM

16

Adc

Base Current

Continuous

IB

4.0

Adc

Base Current

Peak (Note 1)

IBM

8.0

Adc

RMS Isolation Voltage (Note 2)

Test No. 1 Per Figure 22a
Test No. 1 Per Figure 22b
Test No. 1 Per Figure 22c
(for 1 sec, R.H. < 30%, TA = 25_C)

VISOL

MJF18008
4500
3500
1500

Total Device Dissipation @ TC = 25_C

MJE18008
MJF18008
Derate above 25C
MJE18008
MJF18008

PD

Operating and Storage Temperature

65 to 150

Max

MJE18008G
AYWW

W
W/_C

125
45
1.0
0.36
TJ, Tstg

MARKING
DIAGRAMS

_C

TO220AB
CASE 221A09
STYLE 1

TO220 FULLPACK
CASE 221D
STYLE 2
UL RECOGNIZED

MJF18008G
AYWW

THERMAL CHARACTERISTICS
Characteristics

Symbol

Thermal Resistance, JunctiontoCase

MJE18008
MJF18008

RqJC

Unit

Thermal Resistance, JunctiontoAmbient

RqJA

62.5

_C/W

Maximum Lead Temperature for Soldering

Purposes 1/8 from Case for 5 Seconds

TL

260

_C

_C/W
1.0
2.78

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
2. Proper strike and creepage distance must be provided.

Semiconductor Components Industries, LLC, 2015

January, 2015 Rev. 10

G
A
Y
WW

= PbFree Package
= Assembly Location
= Year
= Work Week

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.

*For additional information on our PbFree strategy

and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Publication Order Number:
MJE18008/D

MJE18008, MJF18008
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise specified)
Symbol

Min

Typ

Max

Unit

VCEO(sus)

450

Vdc

Collector Cutoff Current (VCE = Rated VCEO, IB = 0)

ICEO

100

mAdc

Collector Cutoff Current (VCE = Rated VCES, VEB = 0)

ICES

100
500
100

mAdc

IEBO

100

mAdc

BaseEmitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc)

BaseEmitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc)

VBE(sat)

0.82
0.92

1.1
1.25

Vdc

CollectorEmitter Saturation Voltage

(IC = 2.0 Adc, IB = 0.2 Adc)

VCE(sat)

0.3
0.3
0.35
0.4

0.6
0.65
0.7
0.8

hFE

14

6.0
5.0
11
11
10

28
9.0
8.0
15
16
20

34

Characteristic
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (IC = 100 mA, L = 25 mH)

(TC = 125_C)
(TC = 125_C)

Collector Cutoff Current (VCE = 800 V, VEB = 0)

Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)

ON CHARACTERISTICS

(TC = 125_C)

(IC = 4.5 Adc, IB = 0.9 Adc)

(TC = 125_C)

DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)

(TC = 125_C)

DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc)

(TC = 125_C)

DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc)

(TC = 125_C)

DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)

Vdc

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

13

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

100

150

pF

Input Capacitance (VEB = 8.0 V)

Cib

1750

2500

pF

VCE(dsat)

5.5
11.5

Vdc

(TC = 125C)

3.5
6.5

(TC = 125C)

11.5
14.5

(TC = 125C)

2.4
9.0

ton

200
190

300

ns

toff

1.2
1.5

2.5

ms

ton

100
250

180

ns

toff

1.6
2.0

2.5

ms

tfi

100
120

180

ns

tsi

1.5
1.9

2.75

ms

tc

250
230

350

ns

tfi

85
135

150

ns

tsi

2.0
2.6

3.2

ms

tc

210
250

300

ns

Dynamic Saturation Voltage:

Determined 1.0 ms and
3.0 ms respectively after
rising IB1 reaches 90% of
final IB1
(see Figure 18)

(IC = 2.0 Adc

IB1 = 200 mAdc
VCC = 300 V)
(IC = 5.0 Adc
IB1 = 1.0 Adc
VCC = 300 V)

1.0 ms

3.0 ms
1.0 ms
3.0 ms

(TC = 125C)

SWITCHING CHARACTERISTICS: Resistive Load (D.C. v 10%, Pulse Width = 20 ms)

TurnOn Time

(IC = 2.0 Adc, IB1 = 0.2 Adc,

IB2 = 1.0 Adc, VCC = 300 V)

(TC = 125C)

TurnOff Time

(TC = 125C)

TurnOn Time

(IC = 4.5 Adc, IB1 = 0.9 Adc,

IB2 = 2.25 Adc, VCC = 300 V)

(TC = 125C)

TurnOff Time

(TC = 125C)

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)

Fall Time

(IC = 2.0 Adc, IB1 = 0.2 Adc,

IB2 = 1.0 Adc)

(TC = 125C)

Storage Time

(TC = 125C)

Crossover Time

(TC = 125C)

Fall Time

(IC = 4.5 Adc, IB1 = 0.9 Adc,

IB2 = 2.25 Adc)

(TC = 125C)

Storage Time

(TC = 125C)

Crossover Time

(TC = 125C)

3. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

4. Proper strike and creepage distance must be provided.

www.onsemi.com
2

MJE18008, MJF18008
TYPICAL STATIC CHARACTERISTICS
100
VCE = 1 V

TJ = 125C

h FE , DC CURRENT GAIN

h FE , DC CURRENT GAIN

100

TJ = 25C
10

TJ = -20C

1
0.01

0.1

TJ = 25C
10

TJ = -20C

1
0.01

10

VCE = 5 V

TJ = 125C

0.1

10

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

Figure 2. DC Current Gain @ 5 Volts

10

1.5
IC = 1 A

3A

5A

V CE , VOLTAGE (VOLTS)

V CE , VOLTAGE (VOLTS)

TJ = 25C

8 A 10 A

0.5

IC/IB = 10

0.1

IC/IB = 5
0
0.01

0.1

0.01
0.01

10

10

IC COLLECTOR CURRENT (AMPS)

Figure 3. Collector Saturation Region

Figure 4. CollectorEmitter Saturation Voltage

10000

1.2

TJ = 25C
f = 1 MHz

Cib

1.1

1000

C, CAPACITANCE (pF)

V BE , VOLTAGE (VOLTS)

0.1

IB, BASE CURRENT (AMPS)

1.3

0.9
0.8
0.7 TJ = 25C
0.6

100
Cob
10

IC/IB = 5
IC/IB = 10

0.5 TJ = 125C
0.4
0.01

TJ = 25C
TJ = 125C

0.1

10

10

100

IC, COLLECTOR CURRENT (AMPS)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. BaseEmitter Saturation Region

Figure 6. Capacitance

www.onsemi.com
3

1000

MJE18008, MJF18008
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
1500

4500
IB(off) = IC/2
VCC = 300 V
PW = 20 ms

IB(off) = IC/2
VCC = 300 V
PW = 20 ms

3500

1000

3000

IC/IB = 5
IC/IB = 10

t, TIME (ns)

TJ = 125C

t, TIME (ns)

TJ = 25C
TJ = 125C

IC/IB = 5

4000

TJ = 25C

500

2500
2000 IC/IB = 10
1500
1000
500

0
0

Figure 8. Resistive Switching, toff

5000
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH

1500
1000

3500
IC = 2 A

3000
2500
2000
1500
1000

TJ = 25C
TJ = 125C
1

IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH

4000

2000

500

TJ = 25C
TJ = 125C

4500
t si , STORAGE TIME (ns)

IC/IB = 5

2500
t, TIME (ns)

Figure 7. Resistive Switching, ton

3000

500

IC/IB = 10
4

IC = 4.5 A
3

10

12

11

13

14

IC COLLECTOR CURRENT (AMPS)

hFE, FORCED GAIN

Figure 9. Inductive Storage Time, tsi

Figure 10. Inductive Storage Time, tsi(hFE)

15

300

400

TJ = 25C
TJ = 125C

350

t, TIME (ns)

250
tfi

200
150
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH

100
50
0
1

IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH

250

tc

300
t, TIME (ns)

IC, COLLECTOR CURRENT (AMPS)

3500

IC, COLLECTOR CURRENT (AMPS)

tfi

200
tc
150

100
TJ = 25C
TJ = 125C
3

50

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Inductive Switching, tc and tfi

IC/IB = 5

Figure 12. Inductive Switching, tc and tfi

IC/IB = 10

www.onsemi.com
4

MJE18008, MJF18008
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
160

400
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH

t fi , FALL TIME (ns)

140

IC = 2 A

130
120
110
100
IC = 4.5 A

90
80
60
3

300
250
200
150

IC = 4.5 A

100

TJ = 25C
TJ = 125C

70

TJ = 25C
TJ = 125C

50

10

11

12

13

14

IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH

IC = 2 A

350
TC , CROSSOVER TIME (ns)

150

15

10

11

12

13

14

hFE, FORCED GAIN

hFE, FORCED GAIN

Figure 13. Inductive Fall Time

Figure 14. Inductive Crossover Time

15

GUARANTEED SAFE OPERATING AREA INFORMATION

100

5 ms

10 ms

1 ms

1 ms

I C , COLLECTOR CURRENT (AMPS)

I C , COLLECTOR CURRENT (AMPS)

DC (MJE18008)
10
EXTENDED
SOA
1
DC (MJF18008)
0.1

0.01
10

100

TC 125C
IC/IB 4
LC = 500 mH

8
7
6
5
4
3
2

-5 V

VBE(off) = 0 V

1000

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 15. Forward Bias Safe Operating Area

POWER DERATING FACTOR

SECOND BREAKDOWN
DERATING

0,6

0,4
THERMAL DERATING
0,2
0,0
20

40

60

80

100

120

140

600
1000
800
200
400
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 16. Reverse Bias Switching Safe

Operating Area

1,0

0,8

-1, 5 V

160

TC, CASE TEMPERATURE (C)

Figure 17. Forward Bias Power Derating

There are two limitations on the power handling ability

of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 15 is
based on TC = 25C; TJ(pk) is variable depending on power
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when TC > 25C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown in
Figure 15 may be found at any case temperature by using the
appropriate curve on Figure 17. TJ(pk) may be calculated
from the data in Figure 20 and 21. At any case temperatures,
thermal limitations will reduce the power that can be handled
to values less than the limitations imposed by second
breakdown. For inductive loads, high voltage and current
must be sustained simultaneously during turnoff with the
basetoemitter junction reversebiased. The safe level is
specified as a reversebiased safe operating area (Figure 16).
This rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode.

www.onsemi.com
5

MJE18008, MJF18008
5
VCE

dyn 1 ms

3
2

dyn 3 ms

VOLTS

1
0
-1
90% IB

-2

1 ms

-3
-4
-5
0

3 ms

IB
1

4
TIME

Figure 18. Dynamic Saturation Voltage Measurements

10
9

90% IC
tfi

IC

tsi

7
6

tc

VCLAMP

10% IC

10% VCLAMP

4
IB

90% IB1

2
1
0
0

4
TIME

Figure 19. Inductive Switching Measurements

+15 V
1 mF

150 W
3W

100 W
3W

IC PEAK

100 mF

MTP8P10

VCE PEAK
VCE

MTP8P10
RB1

MPF930

IB1

MUR105
Iout

MPF930

+10 V

IB

A
IB2

50 W

RB2

MJE210
COMMON
500 mF

150 W
3W

MTP12N10

1 mF

V(BR)CEO(sus)
L = 10 mH
RB2 =
VCC = 20 VOLTS
IC(pk) = 100 mA

-Voff

INDUCTIVE SWITCHING
L = 200 mH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED FOR
DESIRED IB1

Table 1. Inductive Load Switching Drive Circuit

www.onsemi.com
6

RBSOA
L = 500 mH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED
FOR DESIRED IB1

MJE18008, MJF18008
TYPICAL THERMAL RESPONSE
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)

1
D = 0.5
0.2
0.1
0.1

P(pk)

0.05
0.02

t1
t2
DUTY CYCLE, D = t1/t2

SINGLE PULSE
0.01
0.01

0.1

10

t, TIME (ms)

RqJC(t) = r(t) RqJC

RqJC = 1.0C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)

100

1000

Figure 20. Typical Thermal Response (ZqJC(t)) for MJE18008

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

1
D = 0.5
0.2
0.1

P(pk)
0.1
0.05

t1
t2
DUTY CYCLE, D = t1/t2

0.02
0.01
0.01

RqJC(t) = r(t) RqJC

RqJC = 2.78C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)

SINGLE PULSE
0.1

10

100

1000

10000

t, TIME (ms)

Figure 21. Typical Thermal Response (ZqJC(t)) for MJF18008

ORDERING INFORMATION
Device

Package

Shipping

MJE18008G

TO220AB
(PbFree)

50 Units / Rail

MJF18008G

TO220 (Fullpack)
(PbFree)

50 Units / Rail

www.onsemi.com
7

100000

MJE18008, MJF18008
TEST CONDITIONS FOR ISOLATION TESTS*

CLIP

MOUNTED
FULLY ISOLATED
PACKAGE

MOUNTED
FULLY ISOLATED
PACKAGE

CLIP
LEADS

HEATSINK

0.099 MIN

MOUNTED
FULLY ISOLATED
PACKAGE

LEADS

LEADS

HEATSINK

HEATSINK

0.099 MIN

0.110 MIN
Figure 22a. Screw or Clip Mounting Position
for Isolation Test Number 1

Figure 22b. Clip Mounting Position

for Isolation Test Number 2

Figure 22c. Screw Mounting Position

for Isolation Test Number 3

*Measurement made between leads and heatsink with all leads shorted together

MOUNTING INFORMATION**
4-40 SCREW

CLIP

PLAIN WASHER

HEATSINK
COMPRESSION WASHER
HEATSINK

NUT

Figure 23a. ScrewMounted

Figure 23b. ClipMounted

Figure 23. Typical Mounting Techniques

for Isolated Package

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting
technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 440 screw, without washers, and applying a torque in excess
of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 440 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely
affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.

www.onsemi.com
8

MJE18008, MJF18008
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AH

T
B

SEATING
PLANE

F
T

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

Q
1 2 3

H
K
Z
L

G
D
N

INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080

STYLE 1:
PIN 1.
2.
3.
4.

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04

BASE
COLLECTOR
EMITTER
COLLECTOR

TO220 FULLPAK
CASE 221D03
ISSUE K
T
B

SEATING
PLANE

C
S

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.

U
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U

A
1 2 3

H
Y

G
N
L
D

J
R

3 PL

0.25 (0.010)

INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271

STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER

www.onsemi.com
9

MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88

MJE18008, MJF18008

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLCs product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com

N. American Technical Support: 8002829855 Toll Free

USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050

www.onsemi.com
10

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative

MJE18008/D