FORMAT : QP09

KCE/DEPT. OF EEE

DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING

Sub. Code
Sub.Name
Staff Name

: EE6503
: Power Electronics
: Mr.P.Narasimman

Branch / Year / Sem : B.E EEE / III /V

Batch
: 2013-2017
Academic Year
: 2015-16 (ODD)

COURSE OBJECTIVE
1. To get an overview of different types of power semiconductor devices and their switching
characteristics.
2. To understand the operation, characteristics and performance parameters of controlled
rectifiers
3. To study the operation, switching techniques and basics topologies of DC-DC switching
regulators.
4. To learn the different modulation techniques of pulse width modulated inverters and to
understand harmonic reduction methods.
5. To study the operation of AC voltage controller and various configurations.
TEXT BOOKS
T1. M.H.Rashid, Power Electronics: Circuits, Devices and Applications, Pearson Education,
PHI Third Edition, New Delhi, 2004.
T2. P.S.Bimbra Power Electronics Khanna Publishers, third Edition, 2003.

WEB RESOURCES
W1.http://www.ijcee.org/papers/343-E919.pdf
(Topic.No:1-7)
W2.http://www.nptel.ac.in/courses/Webcoursecontents/IIT%20Kharagpur/Power%20El
ectronics/PDF/L-19(SSG)(PE)%20((EE)NPTEL)%20.pdf
(Topic.No:1-12)
W3.http://www.nptel.ac.in/courses/Webcoursecontents/IIT%20Kharagpur/Power%20Electronics
/PDF/L-17(NKD)(PE)%20((EE)NPTEL)%20.pdf
(Topic.No:1-11)
W4.https://www.eal.ei.tum.de/fileadmin/tueieal/www/courses/PE/tutorial/2013-2014W/08_
Space _vector_modulation.pdf
(Topic.No:1-10)
W5.http://www.nct-tech.edu.lk/Download/Technology%20Zone/Power%20Factor%20
Improvement .pdf
(Topic.No:1-24)

PE 3

KCE/EEE/QB/III YR/PE

FORMAT : QP09

Topic
No

KCE/DEPT. OF EEE

Topic

UNIT I

Books for
Reference

Page No.

Teaching
Methodology

No. of
Hours
Required

POWER SEMI-CONDUCTOR DEVICES

1. Study of switching devices

2. structure, Ton-Toff , VI
characteristics of Diode & SCR
3. Structure, Ton-Toff ,
VIcharacteristics of TRIAC
4. Structure, Ton-Toff ,
VI characteristics of BJT & GTO
5. Structure, Ton-Toff ,
VI characteristics of IGBT
6. Structure, Ton-Toff ,
VI characteristics of MOSFET
7. Switching losses
8. Driver and snubber circuit
9. Triggering and Commutation
circuits for SCR

Cumulative
No. of
periods

(9)

T2

1-5

BB

T2

62-93

BB

T2

123-124

BB

T2

10-19

BB

T2

24-27

BB

T2

20-23

BB

T2
T2

68-78
94-103

BB
BB

T2

160-174

BB

LEARNING OUTCOME
At the end of unit, students should be able to
1. Describe the basic operations of power semiconductor switches used for power conversion.
2. Explain the various gate triggering circuits.
UNIT II
PHASE-CONTROLLED CONVERTERS
(9)
10. 2-pulse converters

T2

175-201

CBT & PPT

11

11.
12.
13.
14.

3-pulse converters
6-pulse converters
Effect of source inductance

T2
T2
T2

214-220
210-214
221-225

CBT & PPT

CBT & PPT
CBT & BB

1
2
1

12
14
15

Performance parameters

T2

225-227

BB

16

W1

BB

17

T2

228-235

BB

18

15. Gate Circuit Schemes for

Phase Control
16. Dual converters

LEARNING OUTCOME
At the end of unit, students should be able to
Analyze and design AC to DC converter.
Use of power conversion techniques for various applications.
UNIT III
DC TO DC CONVERTER
17. Step-down and step-up
chopper
18. control strategy
19. Forced commutated chopper
20. Voltage commutated, Current
commutated & Load
commutated
21. Switched mode regulators
Buck & boost
22. buck- boost converter
23. Introduction to Resonant
Converters

(9)

T2

248-254

CBT & PPT

20

T1,W3

170

BB

22

W2

BB

24

T1

186-190

BB

25

T1

194-203

BB

26

T1

352

BB

27

LEARNING OUTCOME
At the end of unit, students should be able to
Analyze and design DC to DC converters.
Describe the performance parameters of controlled rectifiers.
PE 4

KCE/EEE/QB/III YR/PE

FORMAT : QP09

Topic
No

KCE/DEPT. OF EEE

Topic

Books for
Reference

UNIT IV

Page No.

Teaching
Methodology

No. of
Hours
Required

INVERTERS

Cumulative
No. of
periods

(9)

24. Single phase inverters

25. Three phase
(both 120o mode and 180o
mode) inverters
26. PWM techniques
27. Sinusoidal PWM
28. Modified sinusoidal PWM
29. Multiple PWM
30. Introduction to space vector
modulations
31. Voltage and harmonic control

T2

309-336

CBT & PPT

29

T2

337-347

CBT & BB

31

T2
T2
T2
T2

349
354-356
356-359
351-354

NPTEL
BB
BB
BB

33

W4

BB

34

BB

35

32. Current source inverter

T2

BB

36

347-349
359-362
363-377

T2

LEARNING OUTCOME
At the end of unit, students should be able to

Explain the working principle of single phase and three phase inverters.
Describe the various pulse width modulation techniques in inverters

UNIT V

AC TO AC CONVERTERS

33. Single phase AC voltage

controllers
34. Multistage sequence control
35. Single cyclo-converters
36. Three phase
Cyclo-converters
37. Introduction to Integral cycle
control,
38. Power factor control
39. Matrix converters

(9)

T2

396-407

CBT & PPT

38

T2
T2

409
414-419

BB
BB

1
1

39
40

T2

419-425

BB

42

T2

393-395

BB

43

W5
T1

536-537

BB
BB

1
1

44
45

LEARNING OUTCOME
At the end of unit, students should be able to
Explain the working principle of single phase ON-OFF type of ac voltage controller.
Explain various types of cycloconverter.
COURSE OUTCOME

At the end of the course, the students will be able to

Use different components of thyristor family for converting ac electrical power to dc
power.
Understand the principles of operation of power converters.
CONTENT BEYOND THE SYLLABUS

1. Multilevel Inverter
INTERNAL ASSESSMENT DETAILS
ASST. NO.
I
II
Topic Nos.
1 - 12
13-23
Date

PE 5

MODEL
1- 39

KCE/EEE/QB/III YR/PE

FORMAT : QP09

KCE/DEPT. OF EEE

ASSIGNMENT DETAILS
ASSIGNMENT
Topic Nos. for
reference
Deadline

I
1-

II

ASSIGNMENT I (10)
Descriptive Questions
1. Briefly discuss the V-I characteristics of SCR,
MOSFET and IGBT.

ASSIGNMENT II (20)

1. Design the circuit for single phase AC-AC

converter and test the result.
Specification: SCR Module
2. Describe about any one driver circuit and 2. Design the circuit for TRIAC based lamp
snubber circuit for MOSFET and IGBT.
control.
Specification: TRIAC module,40W lamp
3. A single phase semi converter is 3. Design chopper based speed control of
operated from 120 V 50 Hz ac supply.
electric motor.
The load current
Specification: MOSFET module
with an average value Idc is continuous and
ripple free firing angle = /6. Determine.
(a) Displacement factor.
(b) Harmonic factor of input current.
(c) Input power factor. d) Draw the voltage
and current waveform.
4. Compare the performance characteristics of 4. Develop model for speed control system of
MOSFET, IGBT and BJT.
electric
motor
in
clockwise
and
anticlockwise directions.
Specification: H-bridge module
5. A 3-phase full converter charges a battery 5. Develop a simulation model of DC-DC
from a three-phase supply of 230V; 50Hz.
converter and implement using hardware.
The battery emf is 200V and its internal
Specification: Mat lab Software
resistance is 0.5ohm. On account of
inductance connected in series with the
battery, charging current is constant at
20A.Comput the firing angle delay and
supply power factor.

Prepared by

Verified By

Mr.P.NARASIMMAN

HOD/EEE

Approved by

PRINCIPAL
PE 6

KCE/EEE/QB/III YR/PE

FORMAT : QP09

KCE/DEPT. OF EEE

REVIEW SHEET
After Completion of syllabus
Faculty experience in handling / covering syllabus
Unit I :
Unit II :
Unit III :
Unit IV :

Unit V :
Difficulties (if any)

Feedback on University Question Paper

SIGNATURE OF STAFF

PE 7

HOD/EEE

KCE/EEE/QB/III YR/PE