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by
Pawan Fangaria
Published on 04-09-2015 05:00 PM
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The way we are seeing technology progression these days is unprecedented. Its just
about six months ago, I had written about the intense collaboration between ANSYS
and TSMC on the 16nm FinFET based design flow and TSMC certifying ANSYS tools
for TSMC 16nm FF+ technology and also conferring ANSYS with Partner of the
Year award. Read ANSYS Tools Shine at FinFET Nodes!. Just before this Intel also
certified ANSYS tools at 14nm Tri-gate process as written in another article, Intel
& ANSYS Enable 14nm Chip Production. And this week, TSMC has certified ANSYS
Power Integrity and Electromigration (EM) solutions for 10nm FinFET process
node. Its amazing progress! Read the press release here.
ANSYS portfolio of products was showcased in the TSMC Technology Symposium
held in San Jose, California on 7th April, 2015. ANSYS RedHawk and Totem were
certified by TSMC for 10nm FinFET DRM and Spice models. These tools were
certified to provide solutions for static and dynamic voltage drop analysis and
advanced signal and power EM verification that are required for ultra-low power
and high performance SoC designs at 10nm for mobile, computing and networking
applications.
At 10nm process node the devices are left with extremely low noise and reliability
margins and FinFETs structure is typically prone to increasing self-heat.