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1.
2.
(B)
(C)
3.
(C)
4.
(C)
5.
(C)
VE
V E
The phenomenon of breakdown in solids is most complicated one and is least understood.
Following three kinds of breakdown are possible in solid dielectrics.
(1) Electrothermal breakdown.
(2) Purely electrical breakdown
(3) Electrochemical breakdown
1
RH
n.e
For Metal n =
RH 0
V 12 Volt
P 30 Watt
P V.I
I 2.5 A
Q I.t 2.5 60
Q 150C
6.
(B)
7.
(A)
8.
(C)
0.785 4 3.240
9.
(A)
e r 1
10.
11.
(C)
(C)
12.
(A)
m 105
13.
(B)
14.
(C)
15.
(D)
2
9
(B)
V 2000
d 1cm
E 2 105 V/m
(B)
Q2
U
2C
10 103
Q2
2 100 106
Q2 2 102 104
Q 1.414 103 C
18.
(B)
N
E F E C KT n C
ND
NC
1
ND
ND
1
NC
N D Conc of es in V.B
NC Density of states in C.B
19.
(B)
0.0012 m2 / V sec
15mm 15 103 met
I = 25 A
B = 0.6 T
V.m
R H 3.16 1011
A.T
VH
B.I B.I.R H
n.e.
15 103
VH 3.16 108 Volt
20.
(C)
21.
(D)
Vrms
Vm
2
Vm 9 2
2Vm 18 2
8.1 Volt
V0 DC
22.
(B)
Vm 800
50
825
+
+
Vo
50 825
Vm
51.5
800
23.
(C)
24.
(D)
25.
26.
(D)
(A)
27.
(B)
ac
20 A
= 50
By use of schottky diode storage delay time is reduced.
fH
1
2rb'e c
h ie rbb' rb'e
(D)
29.
(D)
30.
31.
(B)
(B)
For Transistor to be work as a switch it must move form cut off to saturation and saturation
to cut off
it is used for lose signal condition which makes transistor into saturation
In NPN es move from E to C while in PNP hole moves from E to C but es have higher
mobility than holes
EB Junction is F. biased & CB Junction is reverse biased
Above Pinch off drain current becomes practically constant.
ID
Pinch off
VGS = 0
32.
(B)
R .V
1500 18
VB 2 CC
R1 R 2 4700 1500
VDS
= 4.35 V
3
33.
(B)
34.
(B)
Anode current
ts
Gate current
35.
(C)
SCR can be brought back to forward blacking state from conduction state only by reducing
the forward current to a level below that of holding current this can be done by :
1. Natural comm.
2. Forced comm.
SCR are made turned off by commutation methods Turn off time of SCR is time required to
achieve forward blocking capability after commutation is initiated.
Turn off time of SCR varies from (5 200) sec then turn off time of commutation circuit is
called circuit turn off time (tc) and hence circuit turn off time must be greater than turnoff
time of SCR (tc > tq)
36.
37.
(B)
y t x 2t x 3t
(A)
y m
x j
y m y m 1 x m
x m m then y m h m
So
h m u m
For stability
38.
h m u m =
39.
(C)
I rms
Im
3
P I2rms .R
40.
(B)
F.T
T/2
Im 2
92
.R 20 540 Watt
3
3
n.p n i 2
41.
n 105 / cm3
(C)
(*)
Rr
73 G p
R r R l 80 G d
Gd
80 16
17.53
73
(A)
h t 0 for t < 0
45.
(C)
46.
47.
(C)
(A)
d z 1
dz 1
H z
1
1 dz
z d
Zero is located at z 1/d
Pole is located at z d
| d | 1 so 1st pole then zero
48.
(B)
49.
(A)
P X C is basically p.d.f not c.d.f here this value will be f X x 0 for all x.
Since between a & b there are uncountable values so we can assume values between
Minus infinity and infinity and hence value will be zero for having area equal to 1 .
50.
(B)
51.
(D)
52.
53.
(C)
(B)
Random Variable is a mathematical function which maps all the elements of random sample
space on a real line or same part of it. So it should not be complex and the values assigned
by random variable are deterministic.
For a wide-sense stationary process correlation function is depends upon time difference only
So it will be always symmetric.
y(t)
h(t)
x(t)
E Y
h d. E X
54.
55.
(B)
(A)
56.
(A)
WC 2fC
if f 0 Xc
1
2 3.14 50 10 106
318.47
f 50Hz Xc
57.
(B)
R
I
R
+
V
58.
XL L 2fL
(A)
X L if both f and L
59.
(C)
V 282.84sin 377t
6
Vm 282.84
Vrms
Vm 282.84
200 Volt
2
2
60.
(B)
61.
(B)
1
T
377
60Hz
6.28
1
0.0167sec
60
1
Vdt
c
integration of square wave is a triangular wave.
If input is given in sinusoidal then in steady state (o/p) will have sinusoidal nature but with
diff. amp. & phase.
I
62.
(C)
V 283 90
300 Rad / sec
L = 0.01H
V
I
Z
283 90
5 tan 1 3/4
Z 4 j 300 0.01
4 3j
56.6 90 tan 1 3/4
So
63.
(C)
P I2rms R
10 I2rms 5
Irms 2
Im
2
Im 2A
V 50 0
I Im 0
I
64.
65.
(A)
(B)
66.
(B)
67.
(D)
50 0
50 0
15 jL | z | 0
Here
50
z
|z|
but
cos
(1)
15 15
0.6
| z | 25
Connected graph means at least there must be at least one path between 2 nodes.
Twig matrix has either value 1
Twig matrix is square matrix. Link matrix may be square or rectangular matrix
A 1 ZA YB
B ZA
C YB 1/ ZB
D=1
68.
(C)
A B A B
C D C D
69.
(B)
S t Ae t Be2t C
if h t
dS
is applied then S(0) = 0
dt
h t Ae t 28e2t
so A 4, B 3
7
S 0 0
70.
(A)
71.
(B)
z s
(D)
73.
74.
(B)
(A)
C 1
k s 4
s 2
25
if
s 0 z 0 1
so
29
k
4
at
s 0 z 0 1
so
72.
43 C 0
k4
29
R
at S = 0
z(0) = 1
R 1
Since z(s) has II order terms in Nr & Dr hence it will be RLC circuit
75.
76.
(B)
(A)
77.
(B)
0 I 4107 5
2 105 T 20 T
2
2r 2 5 10
78.
(B)
Time varying magnetic field generates time varying electric field & vice versa.
79.
(C)
80.
(B)
81.
(C)
E Emax sin kx t
E max
100
120 & H max
H max
120
Bmax
82.
(C)
100
4107
120
2a
C
m
For Dominant mode it must be TEM mode
so m 1
C 2a
8
83.
(B)
84.
(C)
85.
(C)
P
C 20dB 10log 1
P3
P1
100
P3
So
100
100
P3
P3 1mW
R jL
G jC
(C)
fc(10)
87.
(D)
88.
(C)
In any linear and bilateral network any linear impedance can be replaced by an ideal voltage
source (with zero internal impedance) where voltage is equal to instantaneous difference in
voltage across that impedance due to current flowing through it.
89.
90.
91.
(B)
(B)
(A)
92.
(B)
93.
(A)
Ideal voltage source has zero internal impedance while ideal voltmeter has internal
impedance.
V RI
V R I
V
R
I
So error % = 0.5 + 0.2 = 0.7%
8.23 0.7
57.61
0.1
100
100
05761 Volt
error value
0.06 Volt
9
94.
(D)
I2 dL
d
2 d
I2 dL
.
6 105
2 d
20
dL
6 105
2 d
dL 12
95.
(C)
96.
(C)
I = 2 0.5%
R = 100 0.2%
P
I R
100 2
100%
P
I
R
P I2 R
2 0.5 0.2
97.
(C)
98.
(C)
99.
(C)
100.
101.
(D)
(B)
1.2%
Power = V.I
P
V
I
100%
100% 100%
P
V
I
100
150
2%
2%
40
75
9%
150
150
% Limiting error
1%
% 16.7%
9
9
Rm
10
R sh
0.010
m 1 1000 1
300V
R
10 3 103 R 103
R 3 10,000
R 9997
102.
(B)
H z
z 1 a *
1 az 1
Put z re j
Discrete time frequency response will be aperiodic and does not depend upon .
10
103.
(D)
104.
(D)
105.
(B)
P
60
T
3000
60
120
1500 RPM
2 103
2
N
m
40 0.02 Volt
0.8 V
106.
(B)
107.
108.
109.
(A)
(B)
(A)
110.
(B)
111.
112.
113.
114.
115.
(C)
(B)
(D)
(A)
(A)
116.
(A)
IC
117.
(B)
118.
(D)
119.
(B)
Helical antenna does not have the largest B.W, high directivity
Rs
V VD
I s
Rs
1.5
0.3
0.2%
1.5
Hard magnetic materials have large hysteresis loop area.
In Ge it is of the order of 0.01 eV which make es free for conduction.
FET is a voltage controlled current device.
dV
dt
Vs Supply voltage
Vs
Vout peak VF
IF
11
(D)
12