UniFETTM

FDP24N40 / FDPF24N40
N-Channel MOSFET
400V, 24A, 0.175
Features

Description

RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 12A

These N-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary, planar
stripe, DMOS technology.

Low gate charge ( Typ. 46nC)

Low Crss ( Typ. 25pF)

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.

Fast switching
100% avalanche tested
Improve dv/dt capability
RoHS compliant

G
G D S

TO-220
FDP Series

TO-220F
FDPF Series

GD S

MOSFET Maximum Ratings TC = 25oC unless otherwise noted

Symbol
VDSS

Drain to Source Voltage

Parameter

VGSS

Gate to Source Voltage

FDP24N40

FDPF24N40
400

Units
V

30

-Continuous (TC = 25oC)

24

24*

-Continuous (TC = 100oC)

14.4

14.4*

ID

Drain Current

IDM

Drain Current

EAS

Single Pulsed Avalanche Energy

IAR

Avalanche Current

(Note 1)

24

EAR

Repetitive Avalanche Energy

(Note 1)

22.7

mJ

dv/dt

Peak Diode Recovery dv/dt

- Pulsed

(Note 1)

96*

(Note 2)

1296

(Note 3)

mJ

4.5

V/ns

(TC = 25oC)

227

40

- Derate above 25oC

1.8

0.3

W/oC

PD

Power Dissipation

TJ, TSTG

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,
1/8 from Case for 5 Seconds

TL

96

-55 to +150

300

*Drain current limited by maximum junction temperature

Thermal Characteristics
FDP24N40

FDPF24N40

RJC

Symbol

Thermal Resistance, Junction to Case

Parameter

0.55

3.0

RCS

Thermal Resistance, Case to Sink Typ.

0.5

RJA

Thermal Resistance, Junction to Ambient

62.5

62.5

2007 Fairchild Semiconductor Corporation

FDP24N40 / FDPF24N40 Rev. A

Units
o

C/W

www.fairchildsemi.com

FDP24N40 / FDPF24N40 N-Channel MOSFET

December 2007

Device Marking
FDP24N40
FDPF24N40

Device
FDP24N40

Package
TO-220

Reel Size
-

Tape Width
-

Quantity
50

FDPF24N40

TO-220F

50

Electrical Characteristics
Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

400

0.4

V/oC
A

Off Characteristics
BVDSS
BVDSS
/ TJ

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

ID = 250A, VGS = 0V, TJ = 25oC

IDSS

Zero Gate Voltage Drain Current

VDS = 400V, VGS = 0V

VDS = 320V, TC = 125oC

10

IGSS

Gate to Body Leakage Current

VGS = 30V, VDS = 0V

100

3.0

5.0

0.140

0.175

34

ID = 250A, Referenced to

25oC

nA

On Characteristics
VGS(th)
RDS(on)

Gate Threshold Voltage

VGS = VDS, ID = 250A

Static Drain to Source On Resistance

VGS = 10V, ID = 12A

gFS

Forward Transconductance

VDS = 20V, ID = 12A

(Note 4)

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Qg(tot)

Total Gate Charge at 10V

Qgs

Gate to Source Gate Charge

Qgd

Gate to Drain Miller Charge

VDS = 25V, VGS = 0V

f = 1MHz

VDS = 320V, ID = 24A

VGS = 10V
(Note 4, 5)

2270

3020

pF

365

490

pF

25

38

pF

46

60

nC

12

nC

20

nC

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

VDD = 200V, ID = 24A

RG = 25
(Note 4, 5)

40

90

ns

90

190

ns

110

230

ns

65

140

ns

Drain-Source Diode Characteristics

IS

Maximum Continuous Drain to Source Diode Forward Current

24

ISM

Maximum Pulsed Drain to Source Diode Forward Current

96

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 24A

1.4

trr

Reverse Recovery Time

360

ns

Qrr

Reverse Recovery Charge

VGS = 0V, ISD = 24A

dIF/dt = 100A/s

4.7

(Note 4)

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 4.5mH, IAS = 24A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 24A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width 300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

FDP24N40 / FDPF24N40 Rev. A

www.fairchildsemi.com

FDP24N40 / FDPF24N40 N-Channel MOSFET

Package Marking and Ordering Information TC = 25oC unless otherwise noted

Figure 1. On-Region Characteristics

10

Figure 2. Transfer Characteristics

70

VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V

*Notes:
1. VDS = 20V
2. 250s Pulse Test

ID,Drain Current[A]

ID,Drain Current[A]

50

10

150 C

25 C
o

-55 C

*Notes:
1. 250s Pulse Test
o

2. TC = 25 C

0.2

0.1

1
VDS,Drain-Source Voltage[V]

5
6
7
VGS,Gate-Source Voltage[V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperature

0.19

200

0.18

100

0.16
VGS = 10V
VGS = 20V

0.14

150 C
o

25 C

10

*Notes:
1. VGS = 0V

*Note: TJ = 25 C

2. 250s Pulse Test

0.12
0

10

20
30
ID, Drain Current [A]

40

1
0.2

50

Figure 5. Capacitance Characteristics

3000

Coss

Ciss

*Note:
1. VGS = 0V
2. f = 1MHz

2000

1000

1.4

10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd

VGS, Gate-Source Voltage [V]

4000

0.6
1.0
VSD, Body Diode Forward Voltage [V]

Figure 6. Gate Charge Characteristics

5000

Capacitances [pF]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

IS, Reverse Drain Current [A]

RDS(ON) [],
Drain-Source On-Resistance

0.2
0.05

Crss

VDS = 100V
VDS = 200V
VDS = 320V

2
*Note: ID = 24A

0
0.1

0
1
10
VDS, Drain-Source Voltage [V]

FDP24N40 / FDPF24N40 Rev. A

30

10
20
30
40
Qg, Total Gate Charge [nC]

50

www.fairchildsemi.com

FDP24N40 / FDPF24N40 N-Channel MOSFET

Typical Performance Characteristics

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation vs.

Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance

BVDSS, [Normalized]
Drain-Source Breakdown Voltage

1.2

1.1

1.0

0.9
*Notes:
1. VGS = 0V
2. ID = 250A

0.8
-75

-25
25
75
125
o
TJ, Junction Temperature [ C]

2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 12A

0.5
0.0
-75

175

Figure 9. Maximum Safe Operating Area

- FDP24N40
200
100

2.5

-25
25
75
125
o
TJ, Junction Temperature [ C]

175

Figure 10. Maximum Drain Current

vs. Case Temperature
25

10s

20

1ms

10

ID, Drain Current [A]

ID, Drain Current [A]

100s

10ms
DC

Operation in This Area

is Limited by R DS(on)

*Notes:

0.1

15

10

1. TC = 25 C

2. TJ = 150 C
3. Single Pulse

0.01
1

10
100
VDS, Drain-Source Voltage [V]

0
25

800

50
75
100
125
o
TC, Case Temperature [ C]

150

Figure 10. Transient Thermal Response Curve - FDP24N40

Thermal Response [ZJC]

0.5

0.1

0.2

t1

0.05

t2

0.02

*Notes:

0.01

0.01

1. ZJC(t) = 0.55 C/W Max.

2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)

Single pulse

0.003
-5
10

FDP24N40 / FDPF24N40 Rev. A

PDM

0.1

-4

10

-3

-2

-1

10
10
10
10
Rectangular Pulse Duration [sec]

10

10

www.fairchildsemi.com

FDP24N40 / FDPF24N40 N-Channel MOSFET

Typical Performance Characteristics (Continued)

FDP24N40 / FDPF24N40 N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDP24N40 / FDPF24N40 Rev. A

www.fairchildsemi.com

FDP24N40 / FDPF24N40 N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+
V

DS

_
I

SD

L
D r iv e r
R

V GS
( D r iv e r )

G S

S am e T ype
as DUT

DD

d v / d t c o n t r o lle d b y R G
I S D c o n t r o lle d b y p u ls e p e r io d

G a t e P u ls e W id th
D = -------------------------G a te P u ls e P e r io d

10V

I F M , B o d y D io d e F o r w a r d C u r r e n t

I SD
( DUT )

d i/ d t

IR M
B o d y D io d e R e v e r s e C u r r e n t

V DS
( DUT )

B o d y D io d e R e c o v e r y d v / d t

SD

DD

B o d y D io d e
F o r w a r d V o lt a g e D r o p

FDP24N40 / FDPF24N40 Rev. A

www.fairchildsemi.com

FDP24N40 / FDPF24N40 N-Channel MOSFET

Mechanical Dimensions

TO-220

FDP24N40 / FDPF24N40 Rev. A

www.fairchildsemi.com

FDP24N40 / FDPF24N40 N-Channel MOSFET

Mechanical Dimensions

TO-220F
3.30 0.10

10.16 0.20

2.54 0.20

3.18 0.10

(7.00)

(1.00x45)

15.87 0.20

15.80 0.20

6.68 0.20

(0.70)

0.80 0.10
)
0

(3

9.75 0.30

MAX1.47

#1

+0.10

0.50 0.05

2.54TYP
[2.54 0.20]

2.76 0.20

2.54TYP
[2.54 0.20]

9.40 0.20

4.70 0.20

0.35 0.10

Dimensions in Millimeters

FDP24N40 / FDPF24N40 Rev. A

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Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development.

Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I32

FDP24N40 / FDPF24N40 Rev. A

www.fairchildsemi.com

FDP24N40 / FDPF24N40 N-Channel MOSFET

TRADEMARKS