Section 2: Extrinsic conduction in

semiconductors - the effects of doping

Aims of this section

To introduce the effects of doping pure semiconductors with
impurity atoms, and the corresponding effects on the carrier
densities of the semiconductor.

Objectives of this section

After completing this section, you should

• understand how doping alters the densities of charge carriers

in the host semiconductor
• be able to calculate the density of mobile electrons and holes
in a doped semiconductor

Semiconductors & EM Theory 1 Lecture 2

2.1 Intrinsic and extrinsic conduction in semiconductors

Pure material = intrinsic conduction

Intrinsic carrier density, same for electrons and holes

Doped material = extrinsic conduction

There are two types of doping:

• n-type
increases the number of mobile electrons in the conduction
band and reduces the number of holes in the valence band

• p-type
increases the number of holes in the valence band and reduces
the number of mobile electrons in the conduction band
Semiconductors & EM Theory 2 Lecture 2
2.2 Donor atoms, donor levels and n-type semiconductors
n-type doping is the introduction of impurity atoms from group
V of the periodic table into a pure group IV material
e.g. P in Si

Each P atom donates one extra valence electron to the lattice

Semiconductors & EM Theory 3 Lecture 2
The extra electron occupies a donor level, just below the CB

If there is a density N D of n-type dopant atoms, there is a

density N D CB electrons at room temperature.
Semiconductors & EM Theory 4 Lecture 2
The P atom left behind is positively charged:

• This is not a hole, since the covalent bond isn’t broken.

The + charge sits on the P atom and is completely
immobile
• Note that the semiconductor remains electrically neutral
• Group V atoms within a group IV crystal lattice are known as
donor atoms, i.e. they donate mobile electrons to the CB
Semiconductors & EM Theory 5 Lecture 2
2.3 Acceptor atoms, acceptor levels and
p-type semiconductors

p-type is the addition of group III impurity atoms into a pure

group IV material, e.g. boron B in Si.

Each B atom creates a hole

Semiconductors & EM Theory 6 Lecture 2
The B atoms create acceptor levels just above the VB that at
finite temperature are occupied, leaving holes in the VB

If there is a density N A of p-type dopant atoms, there is a

density N A VB holes at room temperature.

Semiconductors & EM Theory 7 Lecture 2

Each B atom is then negatively charged:

• The negative charge on the B atom is completely immobile

• Note that the semiconductor again remains electrically neutral
• Group III atoms within a group IV crystal lattice are known as
acceptor atoms, i.e. they accept electrons, thus creating a
mobile holes in the VB
Semiconductors & EM Theory 8 Lecture 2
2.4 The law of mass action

• For n-type doping (e.g. P in Si), the number of mobile

electrons in the conduction band as a result of the doping is
approximately equal to the number of donor atoms
• For p-type doping (e.g. B in Si), the number of mobile holes
in the valence band as a result of the doping is approximately
equal to the number of acceptor atoms

Call n the number of mobile electrons in the conduction band,

and p the number of mobile holes in the valence band.

In any semiconductor (pure or doped)

np = ni2 (2.1)

….. remember very well!

Semiconductors & EM Theory 9 Lecture 2

Case 1: Intrinsic Semiconductors

n = ni and p = ni , i.e. law of mass action eqn.(2.1) is obeyed.

Case 2: Extrinsic Semiconductors

Charge Carrier Density Intrinsic n-type p-type

Density of mobile Low High Very

electrons in the CB, n Low

Density of mobile holes Low Very

in the VB, p Low High

Semiconductors & EM Theory 10 Lecture 2

Hence, in an n-type semiconductor:

• mobile conduction electrons are the majority carriers

• mobile valance band holes are the minority carriers

In a p-type semiconductor:

• mobile valence band holes are the majority carriers

• mobile conduction electrons are the minority carriers

Semiconductors & EM Theory 11 Lecture 2

2.5 Majority and minority carrier densities

n-type doping

The total density of CB electrons is

n = ND + p
Eqn.(2.1) tells us that the density of VB holes p is
ni2 ni2
p= =
n ND + p
But N D is usually very much bigger than ni for an n-type
semiconductor, i.e
ni2
p≈ (2.2)
ND
This is the minority carrier density (i.e. VB hole density) in an
n-type semiconductor.
Semiconductors & EM Theory 12 Lecture 2
p-type doping

The total density of VB holes is

p = NA + n
Eqn.(2.1) tells us that the density of CB electrons n is
ni2 ni2
n= =
p NA + n
But N A is usually very much bigger than ni for a p-type
semiconductor, i.e.
ni2
n≈ (2.3)
NA
This is the minority carrier density (i.e. CB electron density) in
a p-type semiconductor.

Semiconductors & EM Theory 13 Lecture 2

Worked Example
A piece of n-type Si is doped with 1017 cm−3 As atoms. What are
the densities of electrons in the conduction band and holes in
the valence band at 300 K?

At 300 K: n = N D + p ≈ N D ≈ 1017 cm−3

p≈
n
≈
(
2
i
1.5 × 10 )
10 2

cm −3 ≈ 2.3 × 103 cm −3
ND 1017

i.e. in this piece of n-type Si, holes are the minority carriers.

Semiconductors & EM Theory 14 Lecture 2

2.6 Summary
You should now know the meaning of the following terms

• extrinsic conduction
• doping
• n-type
• p-type
• donors
• acceptors

You should now be able to

• find the densities of mobile electrons and holes in an undoped

(pure) semiconductor
• find the densities of the mobile holes and electrons in both n-
type and p-type semiconductors

Semiconductors & EM Theory 15 Lecture 2