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1.A.4 What is the position of Q point on the load line for the transistor to act as a switch?
1.A.5 For the circuit shown in figure determine the operating point with =100.
UNIT II
MIDBAND ANALYSIS OF SMALL SIGNAL AMPLIFIERS
2.A.1 Derive the input impedance of an emitter follower with equivalent circuit.
2.A.2 Draw a small signal equivalent circuit of CE amplifiers
2.A.3 Compare gain characteristics of CB, CC transistor circuits
2.A.4 What is an amplifier? Compare BJT and FET amplifiers.
2.A.5 Define various h-parameters in a transistor
2.A.6 Draw the small signal equivalent circuit of FET
2.A.7 Draw the small signal equivalent model or h-parameter model of a transistor.
2.A.8 State the expressions for the input-output impedances which offers high stability
2.A.9 Define voltage gain for a JFET CG configuration.
2.A.10 Distinguish between CE, CB, and CC amplifiers.
2.A.11 State Millers theorem
2.A.12 How does input impedance increase due to Darlington connection.
2.A.13 Mention two advantages which are specific to Darlington connection
2.A.14 Draw a Darlington amplifier with Bootstrap arrangement
2.A.15 What is the advantage of Darlington circuit?
2.A.16 What is a Darlington pair? What is its significance?
2.A.17 Define transconductance with respect to a JFET
2.A.18 Give the drain current expressions in triode region and in saturation region of MOSFET
2.A.19 What is the coupling schemes used in multistage amplifiers?
2.A.20 What is need for Differential amplifier?
2.A.21 State Bisection theorem
2.A.22 Define CMRR
2.A.23 What is the need of constant current circuit in differentia amplifier?
UNIT III
FREQUENCY RESPONSE OF AMPLIFIERS
3.A.1 What is meant by power gain?
3.A.2 Draw the general frequency response curve of an amplifier
3.A.3 What is the significance of Octaves and Decades in frequency response?
3.A.29
3.A.30
3.A.31 .
UNIT IV
LARGE AMPLIFIERS
4.A.1
4.A.2
4.A.3
4.A.4
4.A.5 Why is the efficiency of class A resistive loaded power amplifier less than its transformer
coupled counterpart
4.A.6 What is efficiency of class A amplifier
4.A.7 What is theoretical maximum conversion efficiency of class A power amplifier
4.A.8 What is distortion in power amplifiers?
4.A.9 What is crossover distortion and how to minimize?
4.A.10 Mention two important conditions to be satisfied by a complementary symmetry power
stage
4.A.11 With class C power amplifier circuit define class C operation.
4.A.12 Mention the application of class C amplifiers
4.A.13 Compare the efficiency of class A,B,C,AB.
4.A.14 What is class C amplifier? And its applications.
4.A.15 Draw the circuit of a class D amplifier.
4.A.16 Define conversion efficiency of a power amplifier. What is its value for class C power
amplifier?
4.A.17 What is figure of merit in a power amplifier
4.A.18 List the application of MOSFET power amplifier
4.A.19 A power device is mounted on a heat sink with C-S=1C/W, J-C = 7.5C/W and C-A =
5C/W. find the maximum power dissipation of the device when Tjmax = 175C
4.A.20 What is heat sink? State its need.
4.A.21 A class A CE amplifier operates from VCC = 20V draws a current ICQ =5A, and feeds a
load of 40 through a step up transformer of n2/n1=3.16. find the efficiency of the amplifier
when it is properly matched for maximum power supply
4.A.22 A BJT has a maximum power dissipation of 2W at ambient temperature of 25C and
maximum junction temperature of 150C. find its thermal resistance
UNIT V
RECTIFIERS AND POWER SUPPLIES
5.A.1 Compare the performance half wave and full wave rectifiers
5.A.2 What is PIV rating of full wave bridge rectifier
5.A.3 Find the ripple factor for a FWR with capacitor filter with the output waveform as shown
in the figure. Assume RL =100 with C=1000F.
1.B.4 i. A silicon transistor uses voltage divider biasing VCC=12V, R1=10k, R2=5k,
RL=1k, and RE=3k. determine the operating point using thevenins theorem (10) )
1.B.5 For an emitter biased circuit, assume that a Si transistor with =50, VBE=0.7V, VCC=12V,
Vcc=22/5V, RC=5.6k. It is desired to establish a Q point at VCE=5V, IC=1.5mA and a
stability factor S3. Find RC, R1, R2. (10)
1.B.6 a. i. For the transistor circuit in fig.1, find the Q point VCC=15 V and B=100, VBE=0.7 V.
1.B.7
Locate the operating point of the circuit shown. VCC =15V, hfe=200(8)
1.B.8 a. Define the stability factors S(ICO) and S(VBE) for the emitter-bias configuration (4)
b. Perform the dc analysis of FET self-bias configuration and sketch the quiescent values.
(12) )
1.B.9 Calculate the stability factor for a fixed bias circuit.
1.B.10 Determine the bias resistor RB for fixed bias and collector to base bias and compare the
stability factor S for both. Given VCC=12V, RL=330, IB=0.3mA, =100, VCEQ=6V. (6)
1.B.11 Derive equations for the three stability factors (16)
1.B.12 Define stability factor. Derive and explain the condition to avoid thermal runaway. (8)
1.B.13 Draw a self(voltage divider) bias and derive all the stability factor S, S,S(16)
1.B.14 Determine VC and VB for the network shown below (16)
1.B.15 a.
b.
1.B.16 Design a self bias circuit for JFET to be biased in pinch-off region. Given VDD=20,
Vgs=-4V,IDSS=8mA. Draw the designed circuit. (8)
1.B.17 Discuss the various techniques of stabilization of Q point in a transistor.
1.B.18 For the given circuit calculate the VCE and IC, where =100 for Si transistor. (8)
1.B.19
1.B.27
Discuss in detail about any FET biasing techniques (8) [Nov/Dec 2011]
UNIT II
2.B.6
2.B.7
2.B.8 For the CC amplifier circuit, find the expressions for input impedance and voltage gain.
Assume suitable model for transistor
2.B.9 Discuss in detail how the current gain, input impedance, voltage gain and output
impedance of a transistor amplifier can be obtained using h-parameters (16)
2.B.10
2.B.13 Briefly explain the operation of a Darlington emitter follower and also derive an
expression for its performance measures. (16)
2.B.14 Explain methods of increasing input impedance (10)
2.B.15
Determine the load-current ID and output voltage VO for the given network for (4)
2.B.16
i. RD = 1.2 k
2.B.17
ii. RD = 3.3 k )
2.B.20
2.B.21 I. Discuss the working of a basic emitter coupled differential amplifier circuit and derive
its CMRR. (8)
2.B.22 If IB1 and IB2 through the base resistors of differential amplifiers are 1.65A and
1.75A. respectively. Calculate the input offset current and input bias current f the
differentia amplifier. (4)
2.B.23 Draw the circuit diagram for a differential amplifier using BJTs. Describe common mode
and differential modes of working. (8)
2.B.24 What is cascode amplifier? Explain its significance.(8)
2.B.25 How does constant current source increase the gain and hence CMRR in a differential
amplifier (6)
2.B.26 Write the improving methods of CMRR(6)
2.B.27 Discuss about the transfer characters of the differential amplifier (8)
2.B.28 For the circuit shown below draw the dc circuit and find VCQ, ICQ, and hfe.(6)
i. For the circuit shown draw the ac circuit and find AV, Rin,Ro.
UNIT III
FREQUENCY RESPONSE OF AMPLIFIERS
3.B.1 Discuss the low frequency and high frequency response of an amplifier (16)
3.B.2 In Darlington amplifier RE=100. If 1=100 and 2=200, calculate the overall input
impedance. (4)
3.B.3 a. Determine the lower cutoff frequency for the network shown below using the
following parameters.
CS = 10F, CE=20F, CC=1F, RS= 1k R1= 40 k, R2=10k, RE=2k, RL=2.2k, =100,
r0=, VCC=20V, RC=4k(12)
3.B.4 Draw the hybrid-pi model of a bipolar junction transistor and obtain an expression for the
CE short circuit 3 dB frequency f.(4) )
3.B.5 Using hybrid pi model for CE amplifier derive the expression for short circuit gain (16)
3.B.6 Draw the hybrid pi common emitter transistor model at high frequencies and derive the
values of all the components in terms of h-parameters(16)]
3.B.7 Draw hybrid pi equivalent circuit of BJT. (4)
3.B.8 Derive the upper and lower cutoff frequencies of a RC coupled BJT amplifier (16) )
3.B.9 Draw the high frequency equivalent circuit of CB BJT amplifier. Derive the expressions
for all parameters (16)
3.B.10 Discuss the high frequency equivalent circuit of FET and hence derive gain bandwidth
product for any one configuration
3.B.11 Draw the high frequency equivalent of FET amplifier and derive all the parameters
related to frequency response (16)
3.B.12 Sketch the small signal high frequency circuit of a common source amplifier and derive
the expression for a voltage gain. (12)
3.B.13 Perform the analysis for high-frequency response of the FET amplifier using the ac
equivalent circuit and obtain the input and output frequencies (16)
3.B.14 What specific capacitance has the greatest effect on the high frequency response of a
cascade of FET amplifier? Explain. (4)
3.B.15 What are the factors affecting thermal stability of power amplifiers. Explain its
significance. (8)
3.B.16 Explain the operation of high frequency common source FET amplifier
with neat diagram. Derive the expression for (i) voltage gain (ii) input
admittance (iii) input capacitance (iv) output admittance. (16)
3.B.17 Discuss the frequency response of multistage amplifiers. Calculate the overall upper and
lower cutoff frequencies. (10)
3.B.18 Explain the upper and lower cutoff frequencies of multistage amplifier with expressions
(8)
3.B.19 Discuss the terms rise time and sag (6)
3.B.20 For the circuit shown find cut off frequencies due to C1,C2,CS. and due to interelectrode
capacitors Cgs and Cgd.(16) )
Given: gm=0.49mA/V, Cgd=9.38pF ,Cgs=1.8pF , rd=40k
UNIT IV
LARGE AMPLIFIERS
4.B.1 What is a power amplifier? How does this differ from voltage amplifier? Explain.(8)
4.B.2 Discuss the frequency response characteristics of RC coupled amplifiers. Derive the
general expressions for gain at low, middle and high frequencies. Draw Bode plots for low
and high frequency regions. (16)
4.B.3 Explain class A power amplifier with circuit diagram and derive its efficiency (8)
4.B.4
4.B.18 Explain the working of complementary symmetry class B push pull amplifier. What are
its merits, demerits and applications (16)
4.B.19
4.B.20 Explain the operation of class C amplifier and derive its efficiency and figure of merit.
(16)
4.B.21 Explain class D power amplifier with neat sketches (6)
4.B.22 Write short notes on power MOSFET amplifier (6)
4.B.23 A transistor having the following specifications is used in the given circuit
PC,max(after derating) =4W, BVCEO=40V, iC,max =2A, RL=10. Determine the Q point so that
maximum power is dissipated by the load resistor. (6)
4.B.24 A transistor to be used in class C operation has the specifications PC,max= 4W,
BVCEO=40V and IP,max=2A, VCC=20V.
i. Find the minimum value of RL.
ii. What is the possible peak current. (8)
4.B.25
4.B.26 The loud speaker of 8 is connected to the secondary of the output transformer of class
A amplifier circuit. The Q collector current is 140 mA. Turns ratio is 3:1. The collector
supply voltage is 10V is ac power delivered to the loud speaker is 0.48 W. Calculate,
a. A.C power developed across primary
b. RMS value of load voltage
c. RMS value of primary voltage
d. RMS value of load current
e. RMS value of primary current
f. D.C power input
g. Efficiency assuming ideal transformer (16)
4.B.27 Draw the dc and ac load lines for circuit on CE characteristics. Assume R=40, NP=74,
NS=14, VCC=13V. (8)
UNIT V
RECTIFIERS AND POWER SUPPLIES
5.B.1 A half wave rectifier circuit is supplies from a 230V 50Hz, supply with a transformer
having step down ratio of 4:1 to a resistive load of 20k. the diode forward resistance is
100, while transistor series resistance is 30. Calculate the maximum, average and RMS
value of current. (8)
5.B.2 Derive ripple factor for FWR with capacitive filter (10)
5.B.3 In a full wave rectifier a signal f 300V at 50Hz is supplied at the input. Each diode has an
internal resistance of 800. If the load is 2000 calculate
a. Instant peak value f current(3)
b. Output dc current(3)
c. Efficiency of power transfer(3)
5.B.4 Explain the working of FWR with CC filter and derive for its ripple filter (12)
5.B.5 Compare HWR and FWR with respect to output average voltage and ripple factor (4)
5.B.6 Derive the expressions for the rectification efficiency, ripple factor,
transformer utilization factor, form factor and peak factor of
(i) half wave rectifier
(ii) full wave rectifier. (16)
5.B.7 Derive the ripple factor for the following types of filters:
i. C
ii. L
iii. L-C
iv. C-L-C (16)
5.B.8 Explain the circuit of voltage regulator and also short circuit protection mechanism (16)
5.B.9 Explain about voltage multipliers(7)
5.B.10 Explain how zener diode acts as a regulator (6)
5.B.11 Design and draw a zener regulator circuit to meet the specification.
a. Load voltage= 8V
b. Input voltage= 30 V
c. Load current=0-50 mA
d. IZmin= 5mA
e. PZ=1W (8)
5.B.12 Discuss in detail electronically regulated DC power supplies (16)
5.B.13 Draw and explain the working principle of a SMPS circuit with its output waveforms.
(16)
5.B.14 i. Explain the power control method using SCR (10)
ii Design ZENER regulator for the following specification. VIN =8V to 12V, V0=10V, RL=10k. Assume that zener diode is ideal.(6)