TCST1000/ TCST2000

Vishay Telefunken

Transmissive Optical Sensor without Aperture

Description
This device has a compact construction where the
emitting-light sources and the detectors are located
face-to-face on the same optical axis.
The operating wavelength is 950 nm. The detector
consists of a phototransistor.

B)

A)

Applications
D Contactless optoelectronic switch,
control and counter

15134

Features

95 10795

D Compact construction
D No setting efforts
D 2 case variations
D Polycarbonate case protected against
ambient light

D Current Transfer Ratio (CTR) of typical 2.5%

5.50
0.22

Top view

Order Instruction
Ordering Code
TCST1000A)
TCST2000B)

Document Number 83762

Rev. A3, 08Jun99

Resolution (mm) / Aperture (mm)

0.6
/
non
0.6
/
non

Remarks
No mounting flags
With two mounting flags

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TCST1000/ TCST2000
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature

Test Conditions

tp 10 ms
Tamb 25C

Symbol
VR
IF
IFSM
PV
Tj

Value
6
60
3
100
100

Unit
V
mA
A
mW
C

Symbol
VCEO
VECO
IC
ICM
PV
Tj

Value
70
7
100
200
150
100

Unit
V
V
mA
mA
mW
C

Symbol
Ptot
Tamb
Tstg
Tsd

Value
250
55 to +85
55 to +100
260

Unit
mW
C
C
C

Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature

Test Conditions

tp /T = 0.5, tp 10 ms
Tamb 25C

Coupler
Parameter
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature

Test Conditions
Tamb 25C

2 mm from case, t 5 s

Electrical Characteristics (Tamb = 25C)

Input (Emitter)
Parameter
Forward voltage
Junction capacitance

Test Conditions
IF = 60 mA
VR = 0, f = 1 MHz

Symbol
VF
Cj

Min.

Typ.
1.25
50

Max.
1.5

Unit
V
pF

Test Conditions
IC = 1 mA
IE = 10 mA
VCE = 25 V, IF = 0, E = 0

Symbol
VCEO
VECO
ICEO

Min.
70
7

Typ.

Max.

Unit
V
V
nA

Test Conditions
VCE = 5 V, IF = 20 mA
IF = 20 mA, IC = 25 mA

Symbol
IC
VCEsat

Min.
0.25

Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector dark current

100

Coupler
Parameter
Collector current
Collector emitter saturation
voltage
Resolution, path of the
shutter crossing the radiant
sensitive zone
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ICrel = 10/90%

Typ.
0.5

Max.
0.4

0.6

Unit
mA
V
mm

Document Number 83762

Rev. A3, 08Jun99

TCST1000/ TCST2000
Vishay Telefunken
Switching Characteristics
Parameter
Turn-on time
Turn-off time

IF

Test Conditions
VS = 5 V, IC = 1 mA, RL = 100 W (see figure 1)

Symbol
ton
toff

Typ.
15.0
10.0

+5V

IF

96 11698

IC = 2 mA; adjusted through

input amplitude

RG = 50 W
tp
= 0.01
T
tp = 50 ms

Unit
ms
ms

IF

tp
IC
Channel I
50 W

100 W

Channel II

Oscilloscope
RL
1 MW

y
CL x 20 pF

100%
90%

95 10890

Figure 1. Test circuit

10%
0

tr
ts

td
ton
tp
td
tr
ton (= td + tr)

tf
toff

pulse duration
delay time
rise time
turn-on time

ts
tf
toff (= ts + tf)

storage time
fall time
turn-off time

Figure 2. Switching times

Document Number 83762

Rev. A3, 08Jun99

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3 (8)

TCST1000/ TCST2000
Vishay Telefunken
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
10000
ICEO Collector Dark Current,
with open Base ( nA )

P tot Total Power Dissipation ( mW )

400

300
Coupled device
200
Phototransistor
IR-diode

100

VCE=25V
IF=0

1000

100

10

1
0

30

60

90

120

150

Tamb Ambient Temperature ( C )

95 11088

25

Figure 3. Total Power Dissipation vs.

Ambient Temperature

50

100

75

Tamb Ambient Temperature ( C )

95 11090

Figure 6. Collector Dark Current vs. Ambient Temperature

10

1000.0
IC Collector Current ( mA )

I F Forward Current ( mA )

VCE=5V
100.0

10.0

1.0

0.1

0.1

0.01

0.001
0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF Forward Voltage ( V )

96 11862

0.1

100

10

IF Forward Current ( mA )

95 11083

Figure 4. Forward Current vs. Forward Voltage

Figure 7. Collector Current vs. Forward Current

2.0

10
VCE=5V
IF=20mA

IC Collector Current ( mA )

CTR rel Relative Current Transfer Ratio

1.5

1.0

0.5

IF=50mA
1

20mA

10mA
0.1
5mA
2mA

0
25
95 11089

0.01
0

25

50

75

100

Tamb Ambient Temperature ( C )

Figure 5. Relative Current Transfer Ratio vs.

Ambient Temperature
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0.1
95 11084

10

100

VCE Collector Emitter Voltage ( V )

Figure 8. Collector Current vs. Collector Emitter Voltage

Document Number 83762

Rev. A3, 08Jun99

TCST1000/ TCST2000
Vishay Telefunken
110

CTR Current Transfer Ratio ( % )

100

100
I Crel Relative Collector Current

VCE=5V

10

100

10

15141

IF Forward Current ( mA )

95 11085

t on / t off Turn on / Turn off Time ( m s )

Figure 9. Current Transfer Ratio vs. Forward Current

80
70

60
50
40
30
20
10
0
0.5 0.4 0.3 0.2 0.1 0.0 0.1 0.2 0.3 0.4 0.5

0.1
0.1

90

s Displacement ( mm )

Figure 11. Relative Collector Current vs. Displacement

20
Non Saturated
Operation
VS=5V
RL=100W

15

10
ton
5
toff
0
0

95 11086

10

IC Collector Current ( mA )

Figure 10. Turn on / off Time vs. Collector Current

Document Number 83762

Rev. A3, 08Jun99

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TCST1000/ TCST2000
Vishay Telefunken
Dimensions of TCST1000 in mm

96 12099

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Document Number 83762

Rev. A3, 08Jun99

TCST1000/ TCST2000
Vishay Telefunken
Dimensions of TCST2000 in mm

96 12098

Document Number 83762

Rev. A3, 08Jun99

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7 (8)

TCST1000/ TCST2000
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

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Document Number 83762

Rev. A3, 08Jun99

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