Speed TEMPFET

BTS244Z

Speed TEMPFET

N-Channel
Enhancement mode

Logic Level Input

Analog driving possible

PG-TO263-5-2

PG-TO220-5-12

Fast switching up to 1 MHz

Potential-free temperature sensor with
thyristor characteristics
Overtemperature protection Green Product (RoHS Compliant)

AEC Qualified

Avalanche rated

Type

VDS RDS(on)

Package

BTS244Z E3062A

55 V 13 m

PG-TO263-5-2

PG-TO220-5-12

BTS244Z E3043

D Pin 3 and TAB

G Pin 1
A Pin 2

Temperature
Sensor
K Pin 4
S Pin 5

Data Sheet

Pin

Symbol

Function

Gate

Anode Temperature Sensor

Drain

Cathode Temperature Sensor

Source

Rev.1.4, 2013-07-26

Speed TEMPFET
BTS244Z

Maximum Ratings
Parameter

Symbol

Drain source voltage

VDS
V

55

Gate source voltage

VGS

20

Nominal load current (ISO 10483)

ID(ISO)

Drain-gate voltage, RGS = 20 k

DGR

Value

Unit
V

55
A

VGS = 4.5 V, VDS

0.5 V, TC = 85 C

19

VGS = 10 V, VDS

0.5 V, TC = 85 C

26
ID

35

Pulsed drain current

ID puls

188

Avalanche energy, single pulse

EAS

1.65

Ptot

170

-40 ...+175

Continuous drain current 1)

TC = 100 C, VGS = 4.5V

ID = 19 A, RGS = 25
Power dissipation
TC = 25 C
Operating temperature 2)

Tj

Peak temperature ( single event )

Tjpeak

Storage temperature

Tstg

200
-55 ... +150

DIN humidity category, DIN 40 040

IEC climatic category; DIN IEC 68-1

40/150/56

1current limited by bond wire

2Note: Thermal trip temperature of temperature sensor is below 175C
Data Sheet

Rev.1.4, 2013-07-26

Speed TEMPFET
BTS244Z

Thermal Characteristics
Parameter

Symbol

Values

Unit

min.

typ.

max.

Characteristics
junction - case:

RthJC

0.88

Thermal resistance @ min. footprint

Rth(JA)

62

Thermal resistance @ 6 cm2 cooling area 1)

Rth(JA)

33

40

K/W

Electrical Characteristics
Parameter

Symbol

at Tj = 25C, unless otherwise specified

Values

Unit

min.

typ.

max.

55

ID = 130 A

1.2

1.6

ID = 250 A

1.65

Static Characteristics
Drain-source breakdown voltage

V(BR)DSS

VGS = 0 V, ID = 0.25 mA
VGS(th)

Gate threshold voltage, VGS = VDS

IDSS

Zero gate voltage drain current

VDS = 50 V, VGS = 0 V, Tj = -40 C

0.1

VDS = 50 V, VGS = 0 V, Tj = 25 C

0.1

VDS = 50 V, VGS = 0 V, Tj = 150 C

100

IGSS

Gate-source leakage current

nA

VGS = 20 V, VDS = 0 V, Tj = 25 C

10

100

VGS = 20 V, VDS = 0 V, Tj = 150 C

20

100

RDS(on)

Drain-Source on-state resistance

VGS = 4.5 V, ID = 19 A

16

18

VGS = 10 V, ID = 19 A

11.5

13

1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for drain
connection. PCB mounted vertical without blown air.
Data Sheet

Rev.1.4, 2013-07-26

Speed TEMPFET
BTS244Z

Electrical Characteristics
Parameter

Symbol

at Tj = 25C, unless otherwise specified

Values

Unit

min.

typ.

max.

Dynamic Characteristics
Forward transconductance

gfs

25

VDS>2*ID *RDS(on)max , ID = 35 A
Input capacitance

Ciss

2130

2660

pF

Coss

600

750

Crss

320

400

td(on)

15

25

tr

70

105

td(off)

40

60

tf

25

40

Qg(th)

2.5

3.8

Qg(5)

50

75

Qg(total)

85

130

V(plateau)

4.5

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time

ns

VDD = 30 V, VGS = 4.5 V, ID = 47 A,

RG = 2.2
Rise time
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
Turn-off delay time
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
Fall time
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2

Gate Charge Characteristics

Gate charge at threshold

nC

VDD = 40 V, ID = 0.1 A, VGS = 0 to 1 V

Gate charge at 5.0 V
VDD = 40 V, ID = 47 A, V GS = 0 to 5 V
Gate charge total
VDD = 40 V, ID = 47 A, V GS = 0 to 10 V
Gate plateau voltage

VDD = 40 V, ID = 47 A
Data Sheet

Rev.1.4, 2013-07-26

Speed TEMPFET
BTS244Z

Electrical Characteristics
Symbol

Parameter
at Tj = 25C, unless otherwise specified

Values

Unit

min.

typ.

max.

IS

35

IFM

188

VSD

1.25

1.8

trr

110

165

ns

Qrr

0.23

0.35

Reverse Diode
Inverse diode continuous forward current

TC = 25 C
Inverse diode direct current,pulsed
TC = 25 C
Inverse diode forward voltage
VGS = 0 V, IF = 94 A
Reverse recovery time
VR = 30 V, IF =IS, diF/dt = 100 A/s
Reverse recovery charge
VR = 30 V, IF =IS, diF/dt = 100 A/s
Sensor Characteristics
For temperature sensing, i.e. temperature protection, please consider application note
"Temperature sense concept - Speed TEMPFET.
For short circuit protection please consider application note "Short circuit behaviour of
the Speed TEMPFET family.
All application notes are available at http://www.infineon.com/tempfet/

VAK(on)

Forward voltage

IAK(on) = 5 mA, Tj = -40...+150 C

1.3

1.4

IAK(on) = 1.5 mA, Tj = 150 C

0.9

Sensor override

10

600

tP = 100 s, Tj = -40...+150 C
IAK(on)

Forward current

mA

Tj = -40...+150 C
Sensor override
tP = 100 s, Tj = -40...+150 C

Data Sheet

Rev.1.4, 2013-07-26

Speed TEMPFET
BTS244Z

Electrical Characteristics
Parameter

Symbol

at Tj = 25C, unless otherwise specified

Values

Unit

min.

typ.

max.

100

150

Sensor Characteristics
IAK(off)

Temperature sensor leakage current

Tj = 150 C

treset

Min. reset pulse duration 1)

Tj = -40...+150 C, IAK(on) = 0.3 mA,
VAK(Reset)<0.5V
VAK Recovery time1)2)

trecovery

Tj = -40...+150 C, IAK(on) = 0.3 mA

Characteristics
IAK(hold)

Holding current, VAK(off) = 5V

mA

Tj = 25 C

0.05

0.5

Tj = 150 C

0.05

0.3

TTS(on)

150

160

170

toff

0.5

2.5

VAK(reset)

0.5

Thermal trip temperature

VTS = 5V

Turn-off time (Pin G+A and K+S connected)

VTS = 5V, ITS(on) = 2 mA

Reset voltage
Tj = -40...+150C

Sensor recovery behaviour:

S ensor R E S E T

V A K [V ]

tre s e t

5
4

0
S ensor O N

t re c o v e ry
R eset

OFF

1See diagram Sensor recovery behaviour

2Time after reset pulse until V
AK reaches 4V again
Data Sheet

Rev.1.4, 2013-07-26

Speed TEMPFET
BTS244Z

1 Maximum allowable power dissipation

2 Drain current

Ptot = f(TC)

ID = f(TC ); VGS

180

4.5V

40
A

30

120

ID

Ptot

140

25

100
20
80
15
60
10

40

20
0
-40

40

80

120

0
0

180

20

40

60

80

100 120 140 C

TC

180

TC

3 Typ. transient thermal impedance

4 Transient thermal impedance

ZthJA=f(tp ) @ 6 cm2 cooling area

ZthJC = f (tp )

Parameter: D=tp /T

parameter : D = tp /T

10 2

10 1
K/W

K/W

10 0

D=0.5

10

D=0.5

Z thJC

Z thJA

0.2
0.1

0.2

10 -1

0.05

0.1
0.05

10 0
0.02

0.02

10 -2

0.01

10 -1

0.01

Single pulse

10 -3

Single pulse

10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

10

10

-8

-7

-6

10 10 10 10

tp
Data Sheet

-4
-5

-4

-3

-2

10 10 10 10

-1

10 10

s 10

tp
7

Rev.1.4, 2013-07-26

Speed TEMPFET
BTS244Z

5 Safe operating area

6 Typ. output characteristic

ID=f(VDS ); D=0.01; TC =25C

ID = f(VDS); Tj =25C
Parameter: VGS
180
10V

7V

140

6V

ID

ID

120
100

5V

80

4.5V

60

4V

40

3.5V

20

3V

0
0

VDS

7 On-state resistance

8 On-state resistance

RON = f(Tj ); ID=19A; VGS = 4.5V

RON = f(Tj ); ID=19A; VGS = 10V

40

30

30

RDS(on)

RDS(on)

max.

typ.

25

20

max.

20

typ.

15

15
10
10
5
5

0
-50

-25

25

50

75

100 125 C

0
-50

175

Tj
Data Sheet

-25

25

50

75

100 125 C

175

Tj
8

Rev.1.4, 2013-07-26

Speed TEMPFET
BTS244Z

9 Typ. transfer characteristics

10 Typ. input threshold voltage

ID = f(VGS); VDS = 12V; Tj = 25C

VGS(th) = f(Tj); VDS =VGS

Parameter: ID

100

2.4

2.0

VGS(th)

80

ID

70
60

1.8
130mA

1.6
13mA

1.4

50

1.2

40

1.0

1.3mA

130A

0.8

30

0.6
20
0.4
10

0.2

0
0

0.0
-50

-25

25

50

75

100 125 C

VGS

175

Tj

11 Typ. capacitances

12 Typ. forward charcteristics of

C = f(VDS); VGS =0 V, f=1 MHz

reverse diode IF = f(VSD )

tp = 80s (spread); Parameter: Tj

10 1

10 2

A
nF

150C

10 1

25C

IF

Ciss

10 0

Coss

10 0

Crss

10 -1
0

12

16

20

24

28

32

10 -1
0.0

40

VDS
Data Sheet

0.2

0.4

0.6

0.8

1.0

1.2

1.6

VSD
9

Rev.1.4, 2013-07-26

Speed TEMPFET
BTS244Z

13 Typ. gate charge

14 Drain-source break down voltage

VGS = f(QGate); ID puls = 47A

V(BR)DSS = f(Tj )

BTS 244 Z

66

V(BR)DSS

16

VGS

12
0,2 VDS max

10

0,8 VDS max

62

60

58

56

54

52

0
0

Data Sheet

20

40

60

80

100

50
-40

nC 140
QGate

40

80

120

180

Tj

10

Rev.1.4, 2013-07-26

Speed TEMPFET
BTS244Z
Package Outlines

Package Outlines
4.4
10 0.2

1.27 0.1

0...0.3

B
0.05

4.7 0.5

2.7 0.3

2.4
0.1

1.3 0.3

7.55 1)

1 0.3
9.25 0.2

(15)

8.5 1)

0...0.15
5 x 0.8 0.1

0.5 0.1
4 x 1.7
0.25

A B

8 MAX.

0.1 B

1) Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
PG-TO263-5-2

10 0.2

9.9 0.2

B
1.27 0.1

2.8 0.2

0.05
2.4

13 0.5

0...0.3

4.4

11 0.5

12.95

1)

15.65 0.3

17 0.3

8.5 1)
3.7 -0.15

0.5 0.1

0...0.15
2.4

5 x 0.8 0.1
4 x 1.7
1)

Figure 2

Data Sheet

9.25 0.2

Figure 1

GPT09062

0.25

A B C

Typical
Metal surface min. X = 7.25, Y = 12.3
All metal surfaces tin plated, except area of cut.

PG-TO220-5-12

11

Rev.1.4, 2013-07-26

Speed TEMPFET
BTS244Z
Package Outlines
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

For further information on alternative packages, please visit our website:

http://www.infineon.com/packages.
Data Sheet

12

Dimensions in mm
Rev.1.4, 2013-07-26

Speed TEMPFET
BTS244Z
Revision History

Revision History

Revision

Date

Changes

1.4

2013-07-26

page 1, 11: updated package name and package drawing:

PG-TO220-5-62 to PG-TO263-5-2 (SMD)
PG-TO220-5-43 to PG-TO220-5-12 (THD, straight leads);
page 1, 11/12: removed package: PG-TO220-5-3 (THD, staggered leads)
page 1: added sales names for the different packages;

1.3

2009-12-04

page 8: updated description figure 5

updated package drawing of PG-TO220-5-62

1.2

2009-07-31

removed 100ms and DC line in SOA diagram

1.1

2008-11-10

all pages:
added new Infineon logo
Initial version of RoHS-compliant derivate of the BTS244Z
Page 1 and 12: added RoHS compliance statement and Green product feature
Page 1, 11 and 12: Package changed to RoHS compliant version
page 13: added Revision history
page 14: update of disclaimer

Data Sheet

13

Rev.1.4, 2013-07-26

Edition 2013-07-26
Published by
Infineon Technologies AG
81726 Munich, Germany
2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
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