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Speed TEMPFET
N-Channel
Enhancement mode
Logic Level Input
VPT05166
thyristor characteristics
Overtemperature protection
Avalanche rated
Type
BTS 244 Z
VDS
55 V
RDS(on)
13 m
Package
Ordering Code
P-TO220-5-3
Q67060-S6000-A2
P-TO220-5-62
Q67060-S6003-A2
TO-220-5-43
Q67060-S6008
D Pin 3 and TAB
G Pin 1
A Pin 2
Temperature
Sensor
K Pin 4
S Pin 5
Pin
Symbol
Function
Gate
Drain
Source
2000-05-17
BTS 244 Z
Maximum Ratings
Parameter
Symbol
VDS
V
DGR
VGS
ID(ISO)
Value
55
Unit
V
55
20
A
19
0.5 V, TC = 85 C
26
ID
35
ID puls
188
EAS
1.65
Power dissipation
Ptot
170
-40 ...+175
ID = 19 A, RGS = 25
TC = 25 C
Operating temperature 2)
Tj
Tjpeak
Storage temperature
Tstg
200
-55 ... +150
40/150/56
2000-05-17
BTS 244 Z
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
junction - case:
RthJC
0.88
Rth(JA)
62
Rth(JA)
33
40
K/W
Electrical Characteristics
Symbol
Parameter
Values
Unit
min.
typ.
max.
55
ID = 130 A
1.2
1.6
ID = 250 A
1.65
V(BR)DSS
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS
VGS(th)
IDSS
0.1
VDS = 50 V, VGS = 0 V, Tj = 25 C
0.1
100
nA
IGSS
VGS = 20 V, VDS = 0 V, Tj = 25 C
10
100
20
100
m
RDS(on)
VGS = 4.5 V, ID = 19 A
16
18
VGS = 10 V, ID = 19 A
11.5
13
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for drain
connection. PCB mounted vertical without blown air.
3
2000-05-17
BTS 244 Z
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
gfs
25
Ciss
2130
2660
pF
Coss
600
750
Crss
320
400
td(on)
15
25
tr
70
105
td(off)
40
60
tf
25
40
Qg(th)
2.5
3.8
Qg(5)
50
75
Qg(total)
85
130
V(plateau)
4.5
ns
Rise time
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
Fall time
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
nC
VDD = 40 V, ID = 47 A
4
2000-05-17
BTS 244 Z
Electrical Characteristics
Symbol
Parameter
Values
Unit
min.
typ.
max.
IS
35
IFM
188
VSD
1.25
1.8
trr
110
165
ns
Qrr
0.23
0.35
TC = 25 C
Inverse diode direct current,pulsed
TC = 25 C
Inverse diode forward voltage
VGS = 0 V, IF = 94 A
Reverse recovery time
VR = 30 V, IF =IS, diF/dt = 100 A/s
Reverse recovery charge
VR = 30 V, IF =IS, diF/dt = 100 A/s
Sensor Characteristics
For temperature sensing, i.e. temperature protection, please consider application note
"Temperature sense concept - Speed TEMPFET.
For short circuit protection please consider application note "Short circuit behaviour of
the Speed TEMPFET family.
All application notes are available at http://www.infineon.com/tempfet/
Forward voltage
VAK(on)
1.3
1.4
0.9
Sensor override
10
600
tP = 100 s, Tj = -40...+150 C
Forward current
IAK(on)
mA
Tj = -40...+150 C
Sensor override
tP = 100 s, Tj = -40...+150 C
2000-05-17
BTS 244 Z
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
100
150
Sensor Characteristics
Temperature sensor leakage current
IAK(off)
Tj = 150 C
Min. reset pulse duration 1)
treset
trecovery
mA
IAK(hold)
Tj = 25 C
0.05
0.5
Tj = 150 C
0.05
0.3
TTS(on)
150
160
170
toff
0.5
2.5
VAK(reset)
0.5
Reset voltage
Tj = -40...+150C
V A K [V ]
tre s e t
5
4
0
S ensor O N
t re c o v e ry
R eset
OFF
2000-05-17
BTS 244 Z
1 Maximum allowable power dissipation
2 Drain current
Ptot = f(TC)
180
40
A
30
120
ID
Ptot
140
25
100
20
80
15
60
10
40
20
0
-40
40
80
120
0
0
180
20
40
60
80
TC
TC
ZthJC = f (tp )
Parameter: D=tp /T
parameter : D = tp /T
10
180
10 1
K/W
K/W
10 0
D=0.5
10
D=0.5
Z thJC
Z thJA
0.2
0.1
0.2
10 -1
0.05
10 0
0.1
0.05
0.02
0.02
10 -2
0.01
10 -1
Single pulse
0.01
10 -3
Single pulse
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
10
10
tp
-4
-8
-7
-6
10 10 10 10
-5
-4
-3
-2
10 10 10 10
-1
10 10
s 10
tp
7
2000-05-17
BTS 244 Z
5 Safe operating area
ID = f(VDS); Tj =25C
Parameter: VGS
10
180
10V
A
Rdson=Vds/Id
7V
tp=50s
140
100s
ID
120
ID
10 2
6V
100
5V
1ms
80
4.5V
10ms
10 1
60
4V
100ms
40
3.5V
20
3V
DC
10 0 0
10
10
10
0
0
VDS
VDS
7 On-state resistance
8 On-state resistance
40
30
m
max.
30
RDS(on)
RDS(on)
m
typ.
25
20
max.
20
typ.
15
15
10
10
5
5
0
-50
-25
25
50
75
100 125 C
0
-50
175
Tj
-25
25
50
75
100 125 C
175
Tj
8
2000-05-17
BTS 244 Z
9 Typ. transfer characteristics
100
2.4
2.0
VGS(th)
80
ID
70
60
1.8
130mA
1.6
13mA
1.4
50
1.2
40
1.0
1.3mA
130A
0.8
30
0.6
20
0.4
10
0.2
0
0
0.0
-50
-25
25
50
75
100 125 C
VGS
175
Tj
11 Typ. capacitances
10
10 2
A
nF
150C
10 1
25C
IF
Ciss
10 0
Coss
10 0
Crss
10 -1
0
12
16
20
24
28
32
10 -1
0.0
40
VDS
0.2
0.4
0.6
0.8
1.0
1.2
1.6
VSD
9
2000-05-17
BTS 244 Z
13 Typ. gate charge
V(BR)DSS = f(Tj )
BTS 244 Z
66
VGS
12
0,2 VDS max
10
V(BR)DSS
16
62
60
58
56
54
52
0
0
20
40
60
80
100
50
-40
nC 140
QGate
40
80
120
180
Tj
10
2000-05-17
BTS 244 Z
Package
Ordering Code
Package
Ordering Code
P-TO220-5-3
Q67060-S6000-A2
P-TO220-5-62
Q67060-S6003-A2
9.9
9.5
3.7
4.4
4.4
1.3
2.8
9.9
8
2.4
0.5
0.8
0.2
GPT05165
Package
Ordering Code
TO-220-5-43
Q67060-S6008
0.5
1.7
4.5
8.2
9.2
3.6
1.5
15
1.7
4x1.7=6.8
1)
4 x 1.7 = 6.8
1.5
5.6
10.5
9.2
1)
3)
9.75
5 2)
12.8
15.6
0.8
1.3
0.2
2.4
GPT05166
11
2000-05-17
BTS 244 Z
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
12
2000-05-17