Code No: R05012302 Set No.

1
I B.Tech Supplimentary Examinations, February 2008
BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
(Bio-Technology)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
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1. (a) Derive an expression for the total power in a 3-phase circuit in terms of line
voltages and line currents. Show that the power is same whether the load is
delta connected or star connected.
(b) A 3-phase balanced star-connected load consists of 100 ohms resistance con-
nected across a 220V, 3-phase supply. Determine the line currents and total
power consumed. [8+8]

2. (a) Explain how the torque is produced in the rotor of an 3-phase induction motor?
(b) A 3-phase, 6-pole induction motor working from a 3-phase 400V, 50 Hz supply
is running at 970 r.p.m. What is the synchronous speed, slip speed, and the
frequency of rotor currents? [8+8]

3. (a) Prove that the concentration of holes in an intrinsic semiconductor is given by

p = Nv e−(EF −EV )/KT .
(b) Prove that for intrinsic semiconductor n2i proportional to T 3 e−EGO /KT [6+10]

4. (a) The half wave rectifier shown in the figure 4a is fed with a sinusoidal voltage
V=20 sin100t.
i. Sketch the output waveform.
ii. Determine the DC output voltage assuming ideal diode behaviour.
iii. Repeat the calculations assuming the simplified diode (silicon) model.

Figure 4a
(b) Draw the circuit diagram of full wave rectifier having two diodes and explain
its operation. [8+8]

5. (a) Compare the merits and drawbacks of FET and BJT.

(b) Sketch the basic structure of an n-channel JFET.

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Code No: R05012302 Set No. 1
(c) Define the pinch off voltage VP and sketch the depletion region before and
after pinch-off and explain the reason. [6+4+6]

6. (a) Compare the differences between voltage amplifiers and power amplifiers.
(b) Show that the maximum theoretical efficiency of class B push-pull amplifiers
is 78.5%.
(c) Draw the circuit of a transformer coupled power amplifier and explain its
operations with help of load-line analysis. [4+6+6]

7. (a) Draw the circuit diagram of Wien bridge oscillator using BJT. Show that the
gain of the amplifier must be at least 3 for the oscillations to occur.
(b) For the fixed-bias Ge transistor, n-p-n type, the junction voltages at satura-
tion and cutoff one in active region, may be assumed to zero. This circuit
operate properly over the temperature range -50 o C to 75 o C and to just start
malfunctioning at these extremes. The various circuit specifications are: VCC
= 4.5V, VBB = 3volts, hf e =40 at -50 o C, and hf e =60 at 75 o C, ICBO = 4
µA at 25 o C and doubles every 10 o C. Collector current is 10 µA. Design the
values of Rc1 , R1 and R2 . [8+8]

8. (a) Explain the principle of Half-adder. Draw various implementations of sum

and carry of Half-adder.
(b) Implement AND and OR gate using discrete components.
(c) How do you convert JK-flip-flop to T and D flip-flops. . [6+6+4]

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Code No: R05012302 Set No. 2
I B.Tech Supplimentary Examinations, February 2008
BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
(Bio-Technology)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
⋆⋆⋆⋆⋆

1. Consider a general A.C circuit in which the current leads the applied voltage by
an angle φ. Write the equation for the voltage and current and hence derive the
equation for the power. Also plot the voltage, current and power wave forms. [16]

2. (a) Derive the equation for the voltage generated in a D.C generator.
(b) A 2 pole D.C generator has 200 conductors on its armature. It is driven by a
prime mover at a constant speed of 600 r.p.m. If the flux per pole is 0.1 wb,
calculate the emf generated. [8+8]

3. (a) Prove that the concentration of holes in an intrinsic semiconductor is given by

p = Nv e−(EF −EV )/KT .
(b) Prove that for intrinsic semiconductor n2i proportional to T 3 e−EGO /KT [6+10]

4. (a) Sketch typical SCR forward and reverse characteristics.

(b) Identify all regions of the characteristics and all important current and voltage
levels.
(c) Explain the shape of the curves in terms of the SCR two transistor equivalent
circuit.
(d) Explain why always silicon but not Germanium is used in the construction of
SCR.
(e) Obtain the expression for total current through SCR and Triac.[4+3+3+3+3]

5. (a) Draw the circuit diagram of collector-to-Base bias circuit and derive the ex-
pression for stability factor S. What is the main disadvantage of this biasing?
(b) In the given circuit in figure5b if α = 0.98 and VBE = 0.6V, find R1 in the
circuit for an emitter current of –2mA. Assume the reverse saturation current
= 100 nA. [8+8]

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Code No: R05012302 Set No. 2

Figure 5b
6. (a) Draw the circuit diagram of an emitter follower circuit and its h-parameter
model.
(b) For the given component values Rs = 1KΩ, RL = 3 KΩ and for the given h-
parameters hf e = 100, hie = 2KΩ, hre = 2.5 x 10−4 , hoe = 10µA/V. Calculate
AI , RI , Avs and R0 . [6+10]

7. (a) Draw the circuit diagram of Wien bridge oscillator using BJT. Show that the
gain of the amplifier must be at least 3 for the oscillations to occur.
(b) For the fixed-bias Ge transistor, n-p-n type, the junction voltages at satura-
tion and cutoff one in active region, may be assumed to zero. This circuit
operate properly over the temperature range -50 o C to 75 o C and to just start
malfunctioning at these extremes. The various circuit specifications are: VCC
= 4.5V, VBB = 3volts, hf e =40 at -50 o C, and hf e =60 at 75 o C, ICBO = 4
µA at 25 o C and doubles every 10 o C. Collector current is 10 µA. Design the
values of Rc1 , R1 and R2 . [8+8]

8. (a) Explain how a shift register is used as a Ring counter. Draw the O/P waveform
from each flip-flop of a 3-stage unit.
(b) Prove that if w′ x + yz = 0, then wx + y′ (w′ +z′ ) = wx + xz + x′ z′ + w′ y′ z.
(c) Represent the given negative numbers in sign-magnetude, 1’S and 2’S com-
plement representation in 12-bit format.
i. –64
ii. –512. [6+6+4]

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Code No: R05012302 Set No. 3
I B.Tech Supplimentary Examinations, February 2008
BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
(Bio-Technology)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
⋆⋆⋆⋆⋆

1. (a) With a neat sketch explain the construction and principle of operation of
dynamometer type watt meter.
(b) Two 40W tube lights are ON for a period of six hours a day. Calculate the
total energy consumed by them in a month? [10+6]

2. (a) Explain the constructional details of a synchronous machine giving the reasons
for making two types of rotors.
(b) Explain auxiliary motor starting of synchronous motors. [6+10]

3. (a) Draw the V-I characteristics of p-n diode and explain.

(b) i. What is the current in the diode shown in the figure 3(b)i

Figure 3(b)i
ii. Calculate the load voltage, load power, diode power and total power in
the above circuit.
(c) Explain how p-n junction diode act as a rectifier. [4+8+4]

4. (a) The half wave rectifier shown in the figure 4a is fed with a sinusoidal voltage
V=20 sin100t.
i. Sketch the output waveform.
ii. Determine the DC output voltage assuming ideal diode behaviour.
iii. Repeat the calculations assuming the simplified diode (silicon) model.

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Code No: R05012302 Set No. 3

Figure 4a
(b) Draw the circuit diagram of full wave rectifier having two diodes and explain
its operation. [8+8]
5. (a) Draw the static drain characteristics and transfer characteristics of an N-
channel MOSFET and explain the shape of the curves qualitatively.
(b) Explain the following
i. BJT Switching times with suitable sketches.
ii. Early effect and its consequences. [6+10]
6. (a) Compare the three transistor amplifier configurations with related to AI , Av ,
Ri and R0 .
(b) For the circuit shown calculate AI , AV , Ri and R0 using approximate
h-parameter model. Assume hf e = 50, hie = 1100 Ω, hoe = 25 µA/V, hre =
2.5 × 10−4 as shown in the figure 6b. [16]

Figure 6b
7. (a) Find the resistance R and hf e for the transistor to provide a resonating fre-
quency of 5 kHz of a transistorized phase shift oscillator. The biasing resis-
tances are 25 kΩ and 47 kΩ. The load resistance is 10 Ω. The capacitor in
the tank circuit is 1000 pF which hie of the transistor is 2 kΩ.

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Code No: R05012302 Set No. 3
(b) Explain the role of commutating capacitors in multivibrator circuits.
(c) Design an Astable multivibrator circuit with 50% duty cycle and f=2 KHz,
VCC =10V, VBE(Sat) = 0.6V, VCE(Sat) = 0.3V. Using N-P-N Si transistors.
[6+2+8]

8. (a) Give the Boolean functions: F= xy + x′ y′ +y′ z

i. Implement with only OR and NOT gates.
ii. Implement with only AND and NOT gates.
(b) Explain the principle of master-slave JK flip-flop.
(c) Find the complement of given function and reduce it to a minimum number
of literals.(BC′ +A′ D) (AB′ +CD′ ). [6+5+5]

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Code No: R05012302 Set No. 4
I B.Tech Supplimentary Examinations, February 2008
BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
(Bio-Technology)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
⋆⋆⋆⋆⋆

1. (a) Derive the voltage current relations (between line and phase) values for a star
and delta connected systems.
(b) A 3-phase, 4 wire 208V system supplies power to a star connected load each
arm with impedance equal to (17.32 − j10) ohms (per phase) find the line
currents, power consumed, and the power factor of the load. [8+8]

2. (a) Explain the process of voltage build up in a self-excited D.C machine.

(b) List out the various conditions to be satisfied for voltage build up process in
a self-excited machine, and write down remedies if the conditions fail. [8+8]

3. (a) Draw the V-I characteristics of Zener diode and explain.

(b) For the Zener voltage regulator shown in the figure 3b determine the range
of RL and IL that gives a stabilized voltage of 10 V. What should be wattage
rating of the diode?

Figure 3b
(c) Explain how Zener diode acts as voltage regulator. [4+8+4]

4. (a) What are the principle feature of a bridge rectifier. Explain its operation with
neat circuit diagram. ?
(b) Describe the characteristics of a triac. [8+8]

5. (a) Draw a family of drain characteristics and mutual characteristics of an n-

channel FET and explain the shape of the curves qualitatively.
(b) Define FET parameters and derive the relationship between them. [8+8]

6. (a) Define class A, B, AB, B and C operation of amplifiers.

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Code No: R05012302 Set No. 4
(b) Draw the circuit diagram of a push-pull amplifier and explain how even har-
monics are eliminated.
(c) Derive the relation between gain with feed back and without feedback.[6+6+4]

7. (a) Explain the working principle of Colpitt’s oscillator and derive the formula for
the O/P signal frequency.
(b) Explain the operation of one-shot circuit with relevant waveforms. [8+8]

8. (a) State and prove D Morgan’s theorems.

(b) Realize NOR gate using minimum number of NAND gates.
(c) Find the 2’S complement of (46)10 . [5+5+6]

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