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Minimum 3
Quizzes (scheduled/surprised)
15%
Minimum 3
Midterms
Sessional 1
Sessional 2
Final exam
25%
10%
15%
50%
3
Electronics ?
Electronics ?
Objectives
1.
2.
3.
4.
Small in size
2.
3.
Long life
4.
Overview
Introduction to semiconductors
What are P-type and N-type semiconductors?
What are Diodes?
Forward Bias & Reverse Bias
Characteristics Of Ideal Diode
Shockley Equation
I V Characteristics of Diodes
8
Introduction
The goal of electronic materials is to generate
and control the flow of an electrical current.
Electronic materials include:
Conductors: have low resistance which allows
electrical current flow
Insulators: have high resistance which suppresses
electrical current flow
Semiconductors: can allow or suppress electrical
current flow
Atomic Structure
The highest energy band completely filled with
electrons (at T = 0 K) is called the Valence Band
The next band is called the Conduction Band
The energy difference
between the bottom of the
Conduction and the top of
the Valence bands is called
the Band Gap
10
Why Semiconductors?
Resistivity vs temperature
14
Silicon (Si)
Less sensitive to temperature and abundantly
available But refining is complex
15
16
17
19
In P-type
Holes are majority carriers
Electrons are minority carriers
21
22
Diodes
A diode is formed by putting a N-type and P-type
of semiconductor together
P-N Junction
P type
Anode
N type
Cathode
24
Diodes
P-N Junction
P type
N typ
Anode
25
Diode
Migration of holes from P to N and electrons from
N to P causes a formation of depletion layer
P type
Anode
--+
--+
--+
--+
+
+
+
+
N type
Cathode
26
N
Conduction band
Valence band
27
N type
-+
-+
-+
-+
Anode
Cathode
R
+
+
V
-
VB
28
Energy
P
N
Conduction band
Valence band
29
30
Anode
N type
-
+
+
+
+
+
+
+
+
+
+
+
+
Cathode
VB
31
N
Conduction band
Valence band
32
33
34
Diode Biasing
35
A Diode Puzzle
Which lamps are alight
Characteristics of Diode
Diode always conducts in one direction.
Diodes always conduct current when
Forward Biased ( Zero resistance)
Diodes do not conduct when Reverse Biased
(Infinite resistance)
37
38
39
40
Breakdown
Diode breakdown is caused by thermally generated
electrons in the depletion region
When the reverse voltage across diode reaches
breakdown voltage these electrons will get sufficient
energy to collide and dislodge other electrons
The number of high energy electrons increases in
geometric progression leading to an avalanche effect
causing heavy current and ultimately destruction of
diode
41
Shockley Equation
The forward bias current is closely approximated by
VD
iD = I s exp
nVT
kT
VT =
q
VT 26 mV
42
Shockley Equation
For no bias situation VD = 0 ,
I D = I S (exp(0) 1) = 0
For reverse voltage across diode,
ID = IS
For forward voltage across diode
VD
I D = I s exp
nVT
43
Zener Diode
Same as ordinary diode but
it is placed in the circuit in
reverse bias and operates in
reverse breakdown.
Forward biased
Characteristics are same
Available in range of 1.8 to
200 V breakdown voltages
Break down voltage
depends on doping
44
Zener Diode
It maintains a specific voltage across its terminals
Used for providing a stable reference voltage for use in power
supplies and other equipment
This particular zener circuit will work to maintain 10 V across the load.
45
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47
48
Temperature Effects
In forward bias region the characteristic of
silicon diode shift to left at rate of 2.5mv/oC
In reverse bias, IS Silicon diode is doubles
after every 10 oC
The reverse breakdown voltage depends on
the variation in temperature
49
Types of resistances
As the operating point of a diode moves from one region to
another the resistance of the diode will also change due to the
nonlinear shape of the characteristic curve
The type of applied voltage or signal will define the
resistance level of interest
Three different types of Diode resistances according to
applied voltage
DC or Static Resistance
AC or Dynamic Resistance
Average AC Resistance
50
DC Resistance of Diode
The application of a dc voltage to
a circuit containing a
semiconductor diode will result in
an operating point on the
characteristic curve that will not
change with time
The resistance of the diode at the
operating point can be found
simply by finding the
corresponding levels of VD and ID
The lower current through a diode
the higher the dc resistance level
51
Example DC Resistance
Determine the dc
resistance
a)
b)
c)
ID = 2 mA
ID = 20 mA
VD = -10 V
52
Solution
53
AC or Dynamic Resistance
The varying input will move
the instantaneous operating
point up and down a region
of the characteristics and
thus defines a specific
change in current and
voltage
54
AC resistance
A straight line drawn tangent to the
curve through the Q-point. It will define
a particular change in voltage and current
that can be used to determine the ac or
dynamic resistance for this region of the
diode characteristics
In equation = Vd/ Id
In general, the lower the Q-point of
operation (smaller current or lower
voltage) the higher the ac resistance.
55
Example
For the characteristics
given curve
Determine the ac
resistance at ID = 2 mA.
Determine the ac
resistance at ID = 25
mA.
56
Average AC Resistance
If the input signal is sufficiently
large to produce a broad swing
such as indicated, the resistance
associated with the device for this
region is called the average ac
resistance
The average ac resistance is, by
definition, the resistance determined by a straight line drawn
between the two intersections
established by the maximum and
minimum values of input voltage
57
Diode Specifications
Diode data sheets contain standard information, making cross-matching
of diodes for replacement or design easier.