AP9915H/J

Advanced Power
Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

Low on-resistance

Capable of 2.5V gate drive

Low drive current

20V

RDS(ON)

50m

ID

Single Drive Requirement

BVDSS

20A

Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.

TO-252(H)

TO-251(J)

Rating

Units

Absolute Maximum Ratings

Symbol

Parameter

VDS

Drain-Source Voltage

20

VGS

Gate-Source Voltage

12

ID@TC=25

Continuous Drain Current, VGS @ 4.5V

20

ID@TC=125

Continuous Drain Current, VGS @ 4.5V

16

IDM

Pulsed Drain Current

41

PD@TC=25

Total Power Dissipation

26

Linear Derating Factor

0.2

W/

TSTG

Storage Temperature Range

-55 to 150

TJ

Operating Junction Temperature Range

-55 to 150

Thermal Data
Symbol

Parameter

Value

Unit

Rthj-c

Thermal Resistance Junction-case

Max.

4.8

/W

Rthj-a

Thermal Resistance Junction-ambient

Max.

110

/W

Data and specifications subject to change without notice

200218032

AP9915H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

20

BVDSS

Drain-Source Breakdown Voltage

BVDSS/Tj

Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA

0.03

V/

RDS(ON)

Static Drain-Source On-Resistance

VGS=4.5V, ID=6A

50

VGS=2.5V, ID=5.2A

80

VDS=VGS, ID=250uA

0.5

1.2

VDS=10V, ID=6A

13

VDS=20V, VGS=0V

uA

Drain-Source Leakage Current (Tj=125 C)

VDS=16V ,VGS=0V

25

uA

Gate-Source Leakage

VGS= 12V

100

nA

ID=10A

7.5

nC

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

VGS=0V, ID=250uA

IDSS

Drain-Source Leakage Current (Tj=25 C)

o

IGSS

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDS=20V

0.9

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=5V

nC

VDS=10V

4.5

ns

td(on)

Turn-on Delay Time

tr

Rise Time

ID=10A

49.5

ns

td(off)

Turn-off Delay Time

RG=3.3,VGS=5V

12

ns

tf

Fall Time

RD=1

ns

Ciss

Input Capacitance

VGS=0V

195

pF

Coss

Output Capacitance

VDS=20V

126

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

50

pF

Min.

Typ.

20

41

1.3

Source-Drain Diode
Symbol
IS
ISM
VSD

Parameter

Test Conditions
VD=VG=0V , VS=1.3V

Continuous Source Current ( Body Diode )

Pulsed Source Current ( Body Diode )

2

Forward On Voltage

Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.

Tj=25, IS=20A, VGS=0V

Max. Units

AP9915H/J

40

50

T C =25 o C

T C =150 o C

4.5V

4.5V

40

ID , Drain Current (A)

ID , Drain Current (A)

30

30

3.5V

20

2.5V

3.5V
20

2.5V
10

10

V GS =1.5V

V GS =1.5V

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1.8

60

ID=6A

I D =6A
1.6

V GS =4.5V

T C =25 C

RDS(ON) (m )

Normalized R DS(ON)

50

40

1.4

1.2

1.0

0.8

0.6

30

V GS (V)

Fig 3. On-Resistance v.s. Gate Voltage

-50

50

100

T j , Junction Temperature ( o C)

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

150

AP9915H/J

25

60

50

40
15

PD (W)

ID , Drain Current (A)

20

30

10
20

5
10

0
25

50

75

100

125

150

50

T c , Case Temperature ( C)

100

150

T c , Case Temperature ( o C)

Fig 5. Maximum Drain Current v.s.

Fig 6. Typical Power Dissipation

Case Temperature

1000

Normalized Thermal Response (R thjc)

Duty Factor = 0.5

100

ID (A)

10us
100us
1ms

10

10ms
100ms
1

0.2

0.1

0.1

0.05

PDM

0.02
Single Pulse

0.01

Duty Factor = t/T

Peak Tj = PDM x Rthjc + TC

T c =25 o C
Single Pulse
0.1

0.01

0.1

10

V DS (V)

Fig 7. Maximum Safe Operating Area

100

0.00001

0.0001

0.001

0.01

0.1

t , Pulse Width (s)

Fig 8. Effective Transient Thermal Impedance

AP9915H/J

f=1.0MHz

16

1000

I D =20A

V DS =12V

12

Ciss

V DS =16V

10

V DS =20V
C (pF)

VGS , Gate to Source Voltage (V)

14

Coss
100

Crss

10

0
0

10

12

14

16

18

20

Q G , Total Gate Charge (nC)

13

17

21

25

29

V DS (V)

Fig 9. Gate Charge Characteristics

Fig 10. Typical Capacitance Characteristics

1.2

100

0.95

10

T j =150 C

VGS(th) (V)

IS (A)

T j =25 o C
1

0.7

0.45

0.1

0.2

0.01
0

0.4

0.8

1.2

V SD (V)

Fig 11. Forward Characteristic of

Reverse Diode

1.6

-50

50

100

T j , Junction Temperature ( o C )

Fig 12. Gate Threshold Voltage v.s.

Junction Temperature

150

AP9915H/J

VDS
90%

RD

VDS

0.5x RATED VDS

RG

TO THE
OSCILLOSCOPE

10%
VGS

S
5v

VGS

td(on) tr

Fig 13. Switching Time Circuit

td(off) tf

Fig 14. Switching Time Waveform

VG
VDS

5V
RATED VDS

G
S

QG

TO THE
OSCILLOSCOPE

QGS

QGD

VGS

1~ 3 mA

IG

ID

Charge

Fig 15. Gate Charge Circuit

Fig 16. Gate Charge Waveform