LAST ASSIGNMENT

SEU2012 SPACE KL

29/4/2012

PART A

[20 marks]

Choose the best answer for each question.

Answer ALL questions on the answer sheet provided on page 12.

1.

2.

3.

The atomic number of an atom equals to _________________.

A.

The number of protons

B.

The number of neutrons

C.

The number of electrons

D.

The number of protons and neutrons

How does the conductivity in pure semiconductor vary with temperature?

A.

Conductivity increases as temperature goes down

B.

Conductivity increases as temperature goes up

C.

Conductivity does not change with temperature

D.

Conductivity decreases as temperature goes up

When theory of semiconductor is explained, what term(s) is/are used to described the
current that flow in the semiconductor?

4.

A.

Hole flow

B.

Electron flow

C.

Both A and B

D.

Electromotive electron

In ______ material the electron is called the _______ and the hole is called the
________
I.

n-type, minority carrier, majority carrier

II.

p-type, minority carrier, majority carrier

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III.

n-type, majority carrier, minority carrier

IV.

p-type, majority carrier, minority carrier

A. I only

5.

6.

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B III only

C. I and IV only

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D. II and III only

How much forward diode voltage is there with the ideal diode approximation?
A.

0V

B.

0.7 V

C.

More than 0.7 V

D.

1V

If the resistor in Figure A1 is grounded, the voltage measured by a digital multimeter

between the resistor and ground is closest to
A.

0V

B.

15 V

C.

20 V

D.

- 15 V

Ideal diode
1 k

15 V

Figure A1

7.

What is the peak output voltage of a bridge rectifier for a secondary voltage of 15 Vrms? Assume
all diodes are of silicon type.
A. 9.2 V

8.

B. 15 V

C. 19.8 V

D. 24.3 V

Which of the following statements are true? y

I.

A half-wave rectifier consists of two diodes

II.

In a bridge rectifier, two diodes conduct during each half cycle of the input.

III.

The purpose of a clamper is to shift a dc level of a waveform.

IV.

Rectifier is a circuit that converts ac into pulsating dc.

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A. I and IV only

9.

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B. II and III only

C. II, III and IV only

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D. I, II, III and IV

Which of the following statements are true ?

I.

For a silicon diode, the value of the forward-bias voltage must be

greater than 0.3 V

II.

The V-I curve for diode shows the voltage across the diode for a given current.

III.

The zener diode is limiting the voltage across its terminals in forward bias.

IV.

Ideally, a diode can be represented by a switch.

A. I and III only

10.

B. II and IV only

C. II, III and IV only

D. I, II, III and IV

When the source voltage increases in a zener regulator, which of these currents remains
approximately constant?

A. Series current

11.

12.

B. Zener current

C. Load current

D. Total current

The power dissipated by a transistor approximately equals the collector currents multiply
A.

Base-emitter voltage

B.

Collector-emitter voltage

C.

Base supply voltage

D.

Supply voltage

Which of the following statements are not true?

I.

Collector is the thin and lightly doped region in a BJT.

II.

Emitter is the largest region in a BJT.

III.

Base is the heavily doped region in a BJT.

A.

I and III only

B.

II only

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C.

13.

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I, II and III

D.

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none of the answers above

Determine base voltage, VB for the transistor circuit in Figure A2.

VCC
-12 V

R1

RC

33 k

1.8 k

VB
R2

RE

5.6 k

560

Figure A2

14.

A.

-1.49 V

B.

1.49 V

C.

-1.74 V

D.

1.74 V

Determine the actual gate-to-source voltage, VGS for MOSFET circuit shown in Figure
A3, where its gate leakage current, I G = 50 pA and I D = 1 mA under the existing bias
conditions.
VDD
+ 15 V

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SEU2012 SPACE KL

RG

29/4/2012

RD

22 M

8.2 k

IG

ID

Figure A3

15.

A.

6.977 V

B.

9.766 V

C.

6.799 V

D.

9.677 V

In the active region of a common-emitter amplifier, the base-emitter junction is

__________ biased and the collector-base junction is ____________ biased.

16.

A.

forward, forward

B.

reverse, reverse

C.

reverse, forward

D.

forward, reverse

A CMOS device employs a unique combination of a ______________ and

______________ MOSFET with ____________ set of external leads.

A.

deplection-type, enhancement-type, single

B.

p-channel, n-channel, single

C.

deplection-type, enhancement-type, triple

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D

17.

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p-channel, n-channel, triple

Which of the following statements are true ?

I.

There is no direct electrical connection between the gate terminal and the
channel of a MOSFET.

II.

There are two-types of MOSFET.

III.

A depletion-type MOSFET can operate with zero, positive, or negative gate-tosource voltage.

18.

19.

V.

A depletion-type MOSFET has a physical channel between the drain and source.

A.

I, III and IV only

B.

I, II and IV only

C.

I, II and III only

D.

I, II, III and IV

A depletion-type MOSFET operates in _______________.

A.

both the depletion and enhancement modes B.

the depletion mode only

C.

the enhancement mode only

no answers above

Determine I B in Figure A4.

D.

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SEU2012 SPACE KL

29/4/2012

Figure A.4
A.

20.

47.08 A

B.

23.50 A

C.

2.35 mA

D.

4.71 mA

C.

2.35 mA

D.

4.71 mA

Determine the value of I c in Figure A4.

A.

47.08 A

B.

23.50 A

QUIZ 1
1. Discuss electron-hole pair of covalent bonding.

[5 marks]

2. Discuss Extrinsic Semiconductor.

[5 marks]

3. Find IZmin and IZmax while circuit in Figure 1 is regulated to 15V. Given RS=100 and
RL=500 to 5000
[10 marks]

Figure 1

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SEU2012 SPACE KL

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QUIZ 2
1. .Figure 1 shows a Common Emitter Voltage Divider BJT amplifier circuit. Collector
current is found to be 0.85mA.
a. Calculate VCEQ
[3 marks]
b. A new IBQ is given in graph of Figure 2, sketch the load line
[5 marks]
c. Determine Q-point of question 1 b)
[2 marks]

Figure 1

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SEU2012 SPACE KL
Figure 2

QUIZ 3
1..Figure 1 shows a Common Emitter Voltage Divider BJT amplifier circuit.
a. Sketch small signal model and label appropriately [2 marks]
b. Derive Zi and ZO
[2 marks]
c. Derive AVS
[6 marks]

Figure 1

QUIZ 4
1. List 2 advantages of FET compare to BJT device.

[2 marks]

2. Describe Pinch off

[2 marks]

3. An FET amplifier is shown in Figure 1.

a) Sketch the small signal model (Hibrid-)
b) Derive Zi and ZO
c) Derive AV

[2 marks]
[2 marks]
[2 marks]

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LAST ASSIGNMENT

SEU2012 SPACE KL

29/4/2012

Figure 1
TEST 1
Q1. (Semiconductor)
(a)
(b)

When sufficient energy is added to electron, it will jump to conduction band.

[1 mark]
Define Intrinsic semiconductor?
[3 marks]

(c)

In N-type extrinsic semiconductor, electrons are the carriers and holes are the
carriers.

[2 marks]

Q2. (Voltage Regulator)

(a) A regulator circuit shown in Figure 1 has the following parameters; RS=220, RL=1200,
VZ=20V and IZM=60mA. Determine range of Vi so zener diode turn on.

[5 marks]

Figure 1

Q3. (Bipolar Junction Transistor - BJT)

(a)

Describe BJT in term of its terminal, electron, hole, etc......

[3 marks]

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(b)

SEU2012 SPACE KL

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An amplifier circuit shown in Figure 2 has the following parameters; R1= 500, =100

R2 = 413.57K, R3=2K, C1=10F, VCC=20V, and VBE=0.7V. Determine Q-point.

[6 marks]

Figure 2

TEST 2
Q1.(BJT-FET)
Q1(a). Figure 1 (a) shows an NPN - BJT transistor symbol with associate marking. Do the same
thing for P-channel - FET in Figure 1 (b).
[3 marks]

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Figure 1 (a) NPN BJT

29/4/2012

Figure 1 (b) P-channel - FET

Q2. (FET)
Q2(a). An amplifier is shown in Figure 2. Determine the following;
(i)

Sketch the transfer curve

[5 marks]

(ii)

Find Q point

[4 marks]

(iii)

Sketch hibrid - (small signal) model

[3 marks]

(iv)

Zi, Zo and AV

[5 marks]

Figure 2

Q3. (Amplifier)
Q3(a). Derive VO of Figure 4 when R1 = R2 and R3 = RF

[5 marks]

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Figure 4

SEU2012 SPACE KL

29/4/2012