TGA25N120ND

NPT trench IGBT

Features:
1200V NPT Trench Technology
High Speed Switching
Low Conduction Loss
Positive Temperature Coefficient
Easy parallel Operation
RoHS compliant
JEDEC Qualification

Applications :
G

Induction Heating, Soft switching application

Device

Package

Marking

Remark

TGA25N120ND

TO-3P

TGA25N120ND

RoHS

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-Emitter Voltage

VCES

1200

Gate-Emitter Voltage

VGES

20

50

25

ICM

75

IF

25

IFM

75

312

125

TJ

-55 ~ 150

TSTG

-55 ~ 150

TL

300

Symbol

Value

Unit

Maximum Thermal resistance, Junction-to-Case

RJC (IGBT)

0.4

/W

Maximum Thermal resistance, Junction-to-Case

RJC (DIODE)

2.2

/W

RJA

40

/W

Continuous Current

TC = 25
TC = 100

Pulsed Collector Current (Note 1)

Diode Continuous Forward Current

TC = 100

Diode Maximum Forward Current

Power Dissipation

TC = 25
TC = 100

Operating Junction Temperature

Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds

Ic

PD

Notes :
(1) Repetitive rating : Pulse width limited by max junction temperature

Thermal Characteristics
Parameter

Maximum Thermal resistance, Junction-to-Ambient

Apr. 2011 : Rev0

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TGA25N120ND
NPT trench IGBT
Electrical Characteristics of the IGBT
Parameter

TC=25, unless otherwise noted

Symbol

Test condition

Min

Typ

Max

Units

BVCES

VGE= 0V, IC =1mA

1200

--

--

Zero Gate Voltage Collector Current

ICES

VCE= 1200V, VGE= 0V

--

--

mA

Gate Emitter Leakage Current

IGES

VCE= 0V, VGE =20V

--

--

250

nA

VGE(TH)

VGE= VCE, IC =25mA

3.0

5.0

7.0

--

1.9

2.5

--

2.2

--

--

4000

--

pF

--

105

--

pF

--

72

--

pF

td(on)

--

57

--

ns

tr

--

65

--

ns

--

240

--

ns

--

86

160

ns

--

4.15

6.22

mJ

OFF
Collector Emitter Breakdown Voltage

ON
Gate Emitter Threshold Voltage
Collector Emitter Saturation Voltage

VCE(SAT)

VGE= 15V, IC =25A, TJ=25

oC

VGE= 15V, IC =25A, TJ=125

oC

DYNAMIC
Input Capacitance

CIES

Output Capacitance

COES

Reverse Transfer Capacitance

CRES

VCE= 30V,
VGE= 0V
f =1MHz

SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

td(off)
tf

VCC= 600V, IC =25A

RG= 10, VGE= 15V
Inductive Load, TJ=25 oC

Turn-On Switching Loss

EON

Turn-Off Switching Loss

EOFF

--

0.87

1.31

mJ

Total Switching Loss

ETS

--

5.02

7.53

mJ

Turn-On Delay Time

td(on)

--

41

--

ns

tr

--

57

--

ns

--

265

--

ns

--

168

--

ns

--

4.46

6.69

mJ

Rise Time
Turn-Off Delay Time
Fall Time

td(off)
tf

VCC= 600V, IC =25A

RG= 10, VGE= 15V
Inductive Load, TJ=125 oC

Turn-On Switching Loss

EON

Turn-Off Switching Loss

EOFF

--

1.74

2.61

mJ

Total Switching Loss

ETS

--

6.2

9.30

mJ

Total Gate Charge

Qg

--

170

255

nC

--

27

41

nC

--

60

90

nC

Gate-Emitter Charge

Qge

Gate-Collector Charge

Qgc

Apr. 2011 : Rev0

VCC= 600V, IC =25A

VGE= 15V

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2/7

TGA25N120ND
NPT trench IGBT
Electrical Characteristics of the DIODE TC=25, unless otherwise noted
Parameter

Symbol

Test condition

Min

Typ

Max

--

2.0

2.5

TJ=125 C

--

2.18

--

TJ=25 oC

--

300

480

TJ=125 C

--

360

--

TJ=25 oC

--

27

41

TJ=125 oC

--

31

--

TJ=25 oC

--

4000

6000

--

5580

--

TJ=25 C
Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Current

Reverse Recovery Charge

Apr. 2011 : Rev0

VFM

IF = 25 A

trr

Irr

IF = 25 A,
dI/dt=200A/us

Qrr

TJ=125 C

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Units
V

ns

nC

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TGA25N120ND

IGBT Performance Characteristics

Fig. 1 Output characteristics

Fig. 3 Saturation voltage vs. collector current

Fig. 5 Saturation voltage vs. gate bias

Apr. 2011 : Rev0

NPT trench IGBT

Fig. 2 Saturation voltage characteristics

Fig. 4 Saturation voltage vs. gate bias

Fig. 6 Capacitance characteristics

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TGA25N120ND

IGBT Performance Characteristics

Fig. 7 Turn on time vs. gate resistance

Fig. 9 Switching loss vs. gate resistance

Fig. 11 Turn off time vs. collector current

Apr. 2011 : Rev0

NPT trench IGBT

Fig. 8 Turn off time vs. gate resistance

Fig. 10 Turn on time vs. collector current

Fig. 12 Switching loss vs. collector current

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TGA25N120ND

IGBT Performance Characteristics

Fig. 13 Gate charge characteristics

Fig. 15 RBSOA

Apr. 2011 : Rev0

NPT trench IGBT

Fig. 14 SOA

Fig. 16 Transient thermal impedance

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TGA25N120ND

DIODE Performance Characteristics

NPT trench IGBT

Fig. 17 Conduction characteristics

Fig. 18 Reverse recovery current vs. forward current

Fig. 19 Stored recovery charge vs. forward current

Fig. 20 Reverse recovery time vs. forward current

Apr. 2011 : Rev0

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