GT40Q323

TOSHIBA Insulated Gate Bipolar Transistor

Silicon N Channel IGBT

GT40Q323
Voltage Resonance Inverter Switching Application

Enhancement-mode

High speed: tf = 0.14 s (typ.) (IC = 40A)

FRD included between emitter and collector

4th generation

TO-3P (N) (Toshiba package name)

Unit: mm

Absolute Maximum Ratings (Ta = 25C)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

VCES

1200

Gate-emitter voltage

VGES

25

@ Tc = 100C

Continuous collector
current

@ Tc = 25C

Pulsed collector current

Diode forward current
Collector power
dissipation

IC

20
39

ICP

80

DC

IF

10

Pulsed

IFP

80

@ Tc = 100C
@ Tc = 25C

Junction temperature
Storage temperature range

PC

80
200

A
A
A

Tj

150

Tstg

55 to 150

JEDEC

JEITA

TOSHIBA

2-16C1C

Weight: 4.6 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).

Thermal Characteristics
Characteristics

Symbol

Max

Unit

Thermal resistance (IGBT)

Rth (j-c)

0.625

C/W

Thermal resistance (diode)

Rth (j-c)

1.79

C/W

Equivalent Circuit
Collector

Gate
Emitter

2006-11-01

GT40Q323
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGES

VGE = 25 V, VCE = 0

500

nA

Collector cut-off current

ICES

VCE = 1200 V, VGE = 0

5.0

mA

VGE (OFF)

IC = 40 mA, VCE = 5 V

4.0

7.0

VCE (sat)

IC = 40 A, VGE = 15 V

3.0

3.7

VCE = 10 V, VGE = 0, f = 1 MHz

5550

pF

Resistive Load

0.18

VCC = 600 V, IC = 40 A

0.26

VGG = 15 V, RG = 39

0.14

0.21

0.43

Gate-emitter cut-off voltage

Collector-emitter saturation voltage
Input capacitance

Cies
tr

Rise time
Switching time

Turn-on time

ton

Fall time

tf

Turn-off time

(Note 1)

toff

Diode forward voltage

VF

IF = 10 A, VGE = 0

2.1

Reverse recovery time

trr

IF = 10 A, di/dt = 20 A/s

0.4

Note 1: Switching time measurement circuit and input/output waveforms

VGE

90%
10%

0
RG

RL
IC

90%

VCC
0

90%
10%

VCE

10%

td (off)
tf
toff

tr
ton

2006-11-01

GT40Q323

IC VCE

IC VCE

80

80
8

Common emitter

Common emitter

Tc = 40 C

Tc = 25 C

(A)

10

60

15

Collector current IC

Collector current IC

(A)

20

40

20

VGE = 6 V

0
0

Collector-emitter voltage

VCE

10
15

40
7

20

(V)

VGE = 6 V
2

IC VCE

VCE

(V)

IC VGE
80

Common emitter

20

Common emitter

Tc = 125 C

VCE = 5 V

(A)

10

60

15

Collector current IC

(A)

Collector-emitter voltage

80

Collector current IC

60

0
0

20

40

20

60

40

Tc = 125C
20

25

VGE = 6 V
40
0
0

Collector-emitter voltage

0
0

VCE (V)

Gate-emitter voltage

10

VGE (V)

VCE (sat) Tc

Collector-emitter saturation voltage

VCE (sat) (V)

Common emitter
VGE = 15 V

IC = 80 A

40

20
10

0
60

20

20

60

100

140

Case temperature Tc (C)

2006-11-01

GT40Q323

VCE, VGE QG

C VCE
20

200

10
VCE = 300 V

100

100

5
200

0
0

80

160

Cies

1000
500
300
100

Coes

50
30

Cres

10

Switching time (s)

1
0.5
0.3

tf
ton

0.1

tr

0.05

10

20

30

Collector current IC

Common emitter
3 VCC = 600 V
IC = 40 A
VGG = 15 V
Tc = 25C
1

40

0.3

tf

0.1
0.05

10

(A)

50

RG = 10

(A)

100 s*

100
50
30

10
5
3

100

300

Collector-emitter voltage

VCE

10

VGG = 20 V

300

10

1
1

()

Tj 125C

500

1 ms*

DC
operation

1000

Reverse bias SOA

10 s*

IC max
(continuous)

RG

1000

100 IC max (pulsed) *

10 ms*

100

Gate resistance

Collector current IC

Collector current IC

(A)

300

ton
tr

0.01
1

50

*Single non-repetitive pulse

Tc = 25C
Curves must be derated linearly
with increases in temperature.

500

toff

0.5

Safe operating area

1000

30

(V)

0.03

0.03

0.01
1

VCE

10000

Switching time RG

Common emitter
VCC = 600 V
RG = 39
VGG = 15 V
Tc = 25C
toff

1000

Switching time (s)

100

Collector-emitter voltage

(nC)

Switching time IC
10

Common emitter
VGE = 0
f = 1 MHz
Tc = 25C

5000
3000

10
1

0
320

240

Gate charge QG

(pF)

15

10000

Capacitance C

300

30000

VGE (V)

Common emitter
RL = 7.5
Tc = 25C

Gate-emitter voltage

Collector-emitter voltage

VCE

(V)

400

30

1000

1
1

3000

(V)

10

30

100

300

Collector-emitter voltage

VCE

1000

3000

(V)

2006-11-01

GT40Q323

Rth (t) tw

101

(C/W)

Tc = 25C

Transient thermal impedance Rth (t)

Diode stage
10

IGBT stage

101

102

103
105

104

103

102

100

101

Pulse width

tw

101

(s)

IC max Tc

IF VF
80
Common collector

VGE = 15 V

VGE = 0

(A)

Common emitter

30

Forward current IF

20

10

50

75

100

125

Tc = 125C

60

40

20

10
0

150

Case temperature Tc (C)

trr

0.2

2
Common collector
di/dt = 20 A/s

(V)

(s)

0.4

Forward current IF

40

trr

40

32

0.3

24

0.2

16

0.1

8
lrr

Tc = 25C
30

Common collector
IF = 10 A
Tc = 25 C

trr
Reverse recovery time

lrr

Reverse recovery current lrr

Reverse recovery time

0.5

(A)
0.6

20

trr, lrr di/dt

8

trr

(s)

trr, lrr IF

10

Forward voltage VF

0.8

0.0
0

25

(A)

0
25

40

Reverse recovery current lrr

Maximum DC collector current

IC max (A)

40

0.4

102

0
50

0.0
0

(A)

40

80

120

160

200

0
240

di/dt (A/s)

2006-11-01

GT40Q323

RESTRICTIONS ON PRODUCT USE

20070701-EN

The information contained herein is subject to change without notice.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

2006-11-01