TIP100/101/102

TIP100/101/102
Monolithic Construction With Built In BaseEmitter Shunt Resistors

High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)

Collector-Emitter Sustaining Voltage
Low Collector-Emitter Saturation Voltage
Industrial Use
Complementary to TIP105/106/107

TO-220

1.Base

2.Collector

3.Emitter

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol
VCBO

Parameter
Collector-Base Voltage

VCEO

Collector-Emitter Voltage : TIP100

: TIP101
: TIP102

: TIP100
: TIP101
: TIP102

Value
60
80
100

Units
V
V
V

60
80
100

V
V
V

VEBO

Emitter-Base Voltage

IC

Collector Current (DC)

ICP

Collector Current (Pulse)

15

IB

Base Current (DC)

PC

Collector Dissipation (Ta=25C)

80

TJ

Collector Dissipation (TC=25C)

Junction Temperature

150

TSTG

Storage Temperature

- 65 ~ 150

Equivalent Circuit
C

R1

R2

R 1 10 k
R 2 0.6 k

Electrical Characteristics TC=25C unless otherwise noted

Symbol
VCEO(sus)

ICEO

ICBO

Parameter
Collector-Emitter Sustaining Voltage
: TIP100
: TIP101
: TIP102

Test Condition
IC = 30mA, IB = 0

Min.

Max.

60
80
100

Units
V
V
V

Collector Cut-off Current

: TIP100
: TIP101
: TIP102

VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0

50
50
50

A
A
A

: TIP100
: TIP101
: TIP102

VCE = 60V, IE = 0
VCE = 80V, IE = 0
VCE = 100V, IE = 0

50
50
50

A
A
A

mA

Collector Cut-off Current

IEBO

Emitter Cut-off Current

VEB = 5V, IC = 0

hFE

DC Current Gain

VCE = 4V, IC = 3A
VCE = 4V, IC = 8A

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 3A, IB = 6mA
IC = 8A, IB = 80mA

VBE(on)

Base-Emitter ON Voltage

VCE = 4V, IC = 8A

2.8

Cob

Output Capacitance

VCB = 10V, IE = 0, f = 0.1MHz

200

pF

2001 Fairchild Semiconductor Corporation

1000
200

20000
2
2.5

V
V

Rev. A1, June 2001

TIP100/101/102

Typical Characteristics

700

uA

0.9mA
4

0.8mA

10k

600

uA

400u

500

VCE = 4V

uA

hFE, DC CURRENT GAIN

IC[A], COLLECTOR CURRENT

IB = 1mA

IB = 300 uA

IB = 200 uA

1k

IB = 100 uA
0
0

100
0.1

Figure 2. DC current Gain

10k

10k

Ic = 500 IB

Cob[pF], CAPACITANCE

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

Figure 1. Static Characteristic

V BE(sat)
1k

V CE(sat)

100
0.1

10

1k

100

10

1
0.1

100

10

100

VCB[V], COLLECTOR-BASE VOLTAGE

IC[A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

120

100

10

10

0
s

s
5m

DC
1

TIP100

0.1

TIP101

PC[W], POWER DISSIPATION

100

1ms

IC[A], COLLECTOR CURRENT

10

Ic[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

80

60

40

20

TIP102
0.01
0.1

0
1

10

100

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area

2001 Fairchild Semiconductor Corporation

25

50

75

100

125

150

175

TC[ C], CASE TEMPERATURE

Figure 6. Power Derating

Rev. A1, June 2001

TIP100/101/102

Package Demensions

TO-220
4.50 0.20
2.80 0.10
(3.00)

+0.10

1.30 0.05

18.95MAX.

(3.70)

3.60 0.10

15.90 0.20

1.30 0.10

(8.70)

(1.46)

9.20 0.20

(1.70)

9.90 0.20

1.52 0.10

0.80 0.10
2.54TYP
[2.54 0.20]

10.08 0.30

(1.00)

13.08 0.20

(45

1.27 0.10

+0.10

0.50 0.05

2.40 0.20

2.54TYP
[2.54 0.20]

10.00 0.20

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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QT Optoelectronics
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SLIENT SWITCHER
SMART START

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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
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CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2001 Fairchild Semiconductor Corporation

Rev. H3