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SEMICONDUCTOR TECHNICAL DATA

   




NChannel Enhancement

Motorola Preferred Device

3 DRAIN

2
GATE
1 SOURCE

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Drain Source Voltage

VDSS

60

Vdc

DrainGate Voltage (RGS = 1.0 M)

VDGR

60

Vdc

GateSource Voltage
Continuous
Nonrepetitive (tp 50 s)

VGS
VGSM

20
40

Vdc
Vpk

ID
IDM

200
500

PD

350
2.8

mW
mW/C

TJ, Tstg

55 to +150

Symbol

Max

Unit

RJA

357

C/W

TL

300

Drain Current
Continuous
Pulsed

1
2

CASE 2904, STYLE 22

TO92 (TO226AA)

mAdc

Total Power Dissipation @ TC = 25C

Derate above 25C
Operating and Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16 from case
for 10 seconds

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

V(BR)DSS

60

Vdc

1.0
1.0

Adc
mAdc

IGSSF

10

nAdc

Gate Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)

VGS(th)

0.8

3.0

Vdc

Static DrainSource OnResistance

(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)

rDS(on)

5.0
6.0

DrainSource OnVoltage
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)

VDS(on)

2.5
0.45

OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0, ID = 10 Adc)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125C)
GateBody Leakage Current, Forward
(VGSF = 15 Vdc, VDS = 0)

IDSS

ON CHARACTERISTICS(1)

Ohm

Vdc

1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 3

Motorola SmallSignal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1997

2N7000
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) (Continued)
Characteristic

Symbol

Min

Max

Unit

OnState Drain Current

(VGS = 4.5 Vdc, VDS = 10 Vdc)

Id(on)

75

mAdc

Forward Transconductance
(VDS = 10 Vdc, ID = 200 mAdc)

gfs

100

mhos

pF

ON CHARACTERISTICS(1) (continued)

DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V,
V VGS = 0,
0
f = 1.0 MHz)

Output Capacitance
Reverse Transfer Capacitance

Ciss

60

Coss

25

Crss

5.0

ton

10

toff

10

SWITCHING CHARACTERISTICS(1)
TurnOn Delay Time
TurnOff Delay Time

((VDD = 15 V,, ID = 500 mA,,

Rgen = 25 ohms, RL = 25 ohms)

ns

1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

2.0

1.0
VDS = 10 V

TA = 25C

1.6

VGS = 10 V

1.4

9V

1.2

I D, DRAIN CURRENT (AMPS)

I D, DRAIN CURRENT (AMPS)

1.8

8V

1.0
7V

0.8

6V

0.6
0.4

5V

0.2

4V
3V

1.0

2.0 3.0 4.0 5.0

6.0
7.0 8.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)

9.0

0.8

125C

0.6

0.4

0.2

10

2.4
2.2

1.8

VGS = 10 V
ID = 200 mA

1.6
1.4
1.2
1.0
0.8
0.6
0.4
60

20

+ 20
+ 60
T, TEMPERATURE (C)

+ 100

Figure 3. Temperature versus Static

DrainSource OnResistance

1.0

2.0 3.0 4.0

5.0
6.0
7.0 8.0
VGS, GATE SOURCE VOLTAGE (VOLTS)

9.0

10

Figure 2. Transfer Characteristics

VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)

r DS(on) , STATIC DRAINSOURCE ONRESISTANCE

(NORMALIZED)

Figure 1. Ohmic Region

2.0

25C

55C

+ 140

1.2
1.05
VDS = VGS
ID = 1.0 mA

1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
60

20

+ 20
+ 60
T, TEMPERATURE (C)

+ 100

+ 140

Figure 4. Temperature versus Gate

Threshold Voltage

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N7000
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

R
P
L

SEATING
PLANE

K
D
J

X X
G
H
V

SECTION XX

N
N

CASE 02904
(TO226AA)
ISSUE AD

Motorola SmallSignal Transistors, FETs and Diodes Device Data

DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500

0.250

0.080
0.105

0.100
0.115

0.135

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70

6.35

2.04
2.66

2.54
2.93

3.43

STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN

2N7000

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2N7000/D
Motorola SmallSignal Transistors, FETs and Diodes Device
Data