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LDO stands for low dropout regulator, which has low dropout voltage
comparing to other non-LDO linear regulator.
In general, non-LDO uses emitter follower topology with NPN transistor or
Darlington pair as pass element (the two drawings on the left). Each NPN
transistor use in the regulator contributes a Vbe (base to emitter) voltage
drop (typically 0.7V ). In a result, the dropout voltage is high (1.5V to 2.5V).
It is good for applications that have large Vin-Vout difference, but the
efficiency is low.
LDO is configured in open-collector (PNP transistor) or open-drain (PMOSFET) topology, which makes the voltage drop as low as the saturation
voltage over the transistor (Vce or Vds, less than 1V). P-MOSFET LDO is
more common, as driving a PNP transistor more power is needed in the
control circuit.
The Vds is the drain-to-source voltage across the FET, which is the voltage
dropout from Vin to Vout.
The typical I-V curve of a FET shows how an LDO can control the resistance
of the FET. By changing the gate-source voltage (Vgs), the drain current will
be controlled in order to keep the output in regulation.
For example, an LDO operates at 5V Vin and 3.3V Vout and 500mA load
current. The FET is at point A, and Vgs should be equal to 3V. If the load
condition requires lower Vin-Vout voltage, the operation point on the plot
will shift towards left. But the FET has a minimum resistance limited by the
saturation line. The saturation line in the figure represents a resistance of
0.8Ohm, and the resistance required by point A is (5V-3.3V)/0.5A=3.4Ohm,
which is larger than saturation resistance. In other words, point A is on the
right side of the line, and the LDO can operate at that condition.
Note that the dropout will varies over temperature. Usually, the datasheet
gives a worse case graph showing dropout vs output current at different
temperature conditions.
Besides the input voltage and output voltage/current, the linear regulator
has some important parameters that need to be considered
Quiescent current is also called ground-pin current as the current flow to
ground within the regulator rather than reaching the load. It is measured
when the regulator working in no load condition.
PSRR indicates how well the linear regulator rejects ripples from the input
power source at a wide range of frequency. A higher PSRR means the input
noise can be better filtered out through the regulator before affecting the
output. It is usually a critical parameter in many RF and wireless
applications.
LDOs are the best regulator when the difference between input and output
is small or load is low or the efficiency is a secondary concern compared to
the output noise, ripple, cost and solution size.
The table gives a summary of LDO characteristics and suggestions for
selection on an LDO.
LNA Low Noise Amplifier
PLL Phase Locked Loop
TCXO - Temperature Compensated Crystal Oscillators
IF Intermediate frequency
10