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Application
TO220AB
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
2
1
1. Gate
2. Drain
(Flange)
3. Source
Symbol
Ratings
Unit
VDSS
60
VGSS
20
Drain current
ID
10
ID(pulse)*
40
IDR
10
Channel dissipation
Pch**
30
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
*
PW 10 s, duty cycle 1 %
** Value at TC = 25 C
2SK970
Symbol
Min
Typ
Max
Unit
Test conditions
V(BR)DSS
60
ID = 10 mA, VGS = 0
V(BR)GSS
20
IG = 100 A, VDS = 0
IGSS
10
VGS = 16 V, VDS = 0
IDSS
250
VDS = 50 V, VGS = 0
VGS(off)
1.0
2.0
ID = 1 mA, VDS = 10 V
RDS(on)
0.12
0.15
ID = 5 A, VGS = 10 V *
0.17
ID = 5 A, VGS = 4 V *
0.22
|yfs|
3.5
6.0
ID = 5 A, VDS = 10 V *
Input capacitance
Ciss
400
pF
VDS = 10 V, VGS = 0,
Output capacitance
Coss
220
pF
f = 1 MHz
Crss
60
pF
td(on)
ns
Rise time
tr
55
ns
ID = 5 A, VGS = 10 V,
RL = 6
td(off)
140
ns
Fall time
tf
90
ns
VDF
1.2
IF = 10 A, VGS = 0
trr
125
ns
IF = 10 A, VGS = 0,
diF/dt = 50 A/s
* Pulse Test
2SK970
20
10
3
1.0
0.3
50
100
Case Temperature TC (C)
0.1
0.1
150
4V
5V
Pulse Test
VDS = 10 V
Pulse Test
8
3.5 V
3.0 V
2.5 V
2
75C
2
4
8
10
6
Drain to Source Voltage VDS (V)
25C
TC= 25C
VGS = 2.0 V
0
10
30
100
0.3
1.0
3
Drain to Source Voltage VDS (V)
10
10 V
Ta = 25C
DC
40
s
)
)
ot C
10
s
Sh 25
0
10 ms s (1 =
m (T C
1
10 n
= atio
r
PW pe
O
30
O
lim per
ite ati
d on
by in
R thi
s
DS
(o are
n) a
is
100
60
3
1.0
2
4
Gate to Source Voltage VGS (V)
2SK970
10 A
1.2
0.8
5A
0.4
ID = 2 A
6
2
4
8
10
Gate to Source Voltage VGS (V)
1.6
Pulse Test
1.0
0.5
Pulse Test
ID = 10 A
5A
2A
0.3
VGS = 4 V
0.2
0.1
VGS = 10 V
0
40
10 A
2A
5A
120
0
80
40
Case Temperature TC (C)
VGS = 4 V
10 V
0.1
0.05
0.02
0.01
0.5
1.0
2
10
5
20
Drain Current ID (A)
50
0.5
0.4
Pulse Test
0.2
2.0
160
50
20
VDS = 10 V
Pulse Test
TC = 25C
25C
10
5
75C
2
1.0
0.5
0.1
0.2
0.5 1.0
2
Drain Current ID (A)
10
2SK970
200
VGS = 0
f =1MHz
3000
Capacitance C (pF)
500
100
50
20
1000
Ciss
300
Coss
100
Crss
10
30
5
0.5
10
1.0
5
2
10
20
Reverse Drain Current IDR (A)
50
10
20
30
40
50
Drain to Source Voltage VDS (V)
Switching Characteristics
40
12
VDS
VDD = 50 V
20
25 V
10 V
0
16
VDD = 50 V
25 V
10 V
VGS
ID = 10 A
8
12
16
Gate Charge Qg (nc)
0
20
80
60
500
20
Gate to Source Voltage VGS (V)
100
td (off)
200
100
50
tf
VGS = 10 V
PW = 2 s, duty < 1 %
20
tr
10
5
0.1
td (on)
0.2
0.5 1.0
2
Drain Current ID (A)
10
2SK970
20
Pulse Test
16
12
8
10 V
15 V
4
5V
VGS = 0, 5 V
0.8
0.4
1.2
2.0
1.6
Source to Drain Voltage VSD (V)
D=1
1.0
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.03
1
0.01
10
1
0.0 Pulse
t
o
Sh
100
T
1m
10 m
Pulse Width PW (s)
100 m
PW
1
D = PW
T
10
2SK970
Wavewforms
Vin Monitor
90 %
Vout Monitor
D.U.T
RL
Vin
Vout
10 %
10 %
10 %
50
Vin = 10 V
. 30 V
VDD =
.
td (on)
90 %
tr
90 %
td (off)
tf