November 1995

2N7000 / 2N7002 / NDS7002A

N-Channel Enhancement Mode Field Effect Transistor
General Description

Features
High density cell design for low RDS(ON).

These N-Channel enhancement mode field effect transistors

are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.

Voltage controlled small signal switch.

Rugged and reliable.
High saturation current capability.

___________________________________________________________________________________________

D
G
S
TO-92

2N7000

(TO-236AB)
2N7002/NDS7002A

Absolute Maximum Ratings

TA = 25C unless otherwise noted

2N7000

2N7002

NDS7002A

Symbol

Parameter

VDSS

Drain-Source Voltage

60

VDGR

Drain-Gate Voltage (RGS < 1 M)

60

VGSS

Gate-Source Voltage - Continuous

20

40

- Non Repetitive (tp < 50s)

ID

Maximum Drain Current - Continuous

PD

Maximum Power Dissipation

- Pulsed
o

Derated above 25 C
TJ,TSTG

Operating and Storage Temperature Range

TL

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

Units

200

115

280

500

800

1500

400

200

300

3.2

1.6
-55 to 150

2.4
-65 to 150

300

mA
mW
mW/C
C
C

THERMAL CHARACTERISTICS

RJA

Thermal Resistance, Junction-to-Ambient

1997 Fairchild Semiconductor Corporation

312.5

625

417

C/W

2N7000.SAM Rev. A1

Electrical Characteristics T
Symbol

= 25C unless otherwise noted

Parameter

Conditions

Type

Min

60

Typ

Max

Units

OFF CHARACTERISTICS

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 10 A

All

IDSS

Zero Gate Voltage Drain Current

VDS = 48 V, VGS = 0 V

2N7000

TJ=125C
VDS = 60 V, VGS = 0 V
TJ=125C
IGSSF

IGSSR

Gate - Body Leakage, Forward

Gate - Body Leakage, Reverse

2N7002
NDS7002A

mA

0.5

mA

VGS = 15 V, VDS = 0 V

2N7000

10

nA

VGS = 20 V, VDS = 0 V

2N7002
NDS7002A

100

nA

VGS = -15 V, VDS = 0 V

2N7000

-10

nA

VGS = -20 V, VDS = 0 V

2N7002
NDS7002A

-100

nA

ON CHARACTERISTICS (Note 1)

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 1 mA
VDS = VGS, ID = 250 A

RDS(ON)

2N7000

0.8

2.1

2N7002
NDS7002A

2.1

2.5

1.2

1.9

1.8

5.3

1.2

7.5

1.7

13.5

2N7000

Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA

TJ =125C
VGS = 4.5 V, ID = 75 mA

2N7002

VGS = 10 V, ID = 500 mA
TJ =100C
VGS = 5.0 V, ID = 50 mA
TJ =100C
VGS = 10 V, ID = 500 mA

NDS7002A

TJ =125C
VGS = 5.0 V, ID = 50 mA
TJ =125C
VDS(ON)

Drain-Source On-Voltage

VGS = 10 V, ID = 500 mA

2N7000

VGS = 4.5 V, ID = 75 mA
VGS = 10 V, ID = 500mA

2N7002

VGS = 5.0 V, ID = 50 mA
VGS = 10 V, ID = 500mA
VGS = 5.0 V, ID = 50 mA

NDS7002A

1.7

7.5

2.4

13.5

1.2

3.5

1.7

2.8

0.6

2.5

0.14

0.4

0.6

3.75

0.09

1.5

0.6

0.09

0.15

2N7000.SAM Rev. A1

Electrical Characteristics T
Symbol

= 25oC unless otherwise noted

Parameter

Conditions

Type

Min

Typ

Max

Units

ON CHARACTERISTICS Continued (Note 1)

ID(ON)

gFS

On-State Drain Current

Forward Transconductance

VGS = 4.5 V, VDS = 10 V

2N7000

75

600

VGS = 10 V, VDS > 2 VDS(on)

2N7002

500

2700

VGS = 10 V, VDS > 2 VDS(on)

NDS7002A

500

2700

VDS = 10 V, ID = 200 mA

2N7000

100

320

VDS > 2 VDS(on), ID = 200 mA

2N7002

80

320

VDS > 2 VDS(on), ID = 200 mA

NDS7002A

80

320

mA

mS

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

ton

Turn-On Time

toff

Turn-Off Time

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

All

20

50

pF

All

11

25

pF

All

pF
ns

VDD = 15 V, RL = 25 ,
ID = 500 mA, VGS = 10 V,
RGEN = 25

2N7000

10

VDD = 30 V, RL = 150 ,
ID = 200 mA, VGS = 10 V,
RGEN = 25

2N7002
NDS7002A

20

VDD = 15 V, RL = 25 ,
ID = 500 mA, VGS = 10 V,
RGEN = 25

2N7000

10

VDD = 30 V, RL = 150 ,
ID = 200 mA, VGS = 10 V,
RGEN = 25

2N700
NDS7002A

20

ns

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS
ISM
VSD

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage

2N7002

115

NDS7002A

280

2N7002

0.8

NDS7002A

1.5

VGS = 0 V, IS = 115 mA (Note 1)

2N7002

0.88

1.5

VGS = 0 V, IS = 400 mA (Note 1)

NDS7002A

0.88

1.2

mA
A
V

Note:
1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.

2N7000.SAM Rev. A1

Typical Electrical Characteristics

2N7000 / 2N7002 / NDS7002A
2

V GS =4.0V

8.0
RDS(on) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

9.0

7.0
1 .5

6.0
1

5.0
0 .5

4.0

, DRAIN-SOURCE CURRENT (A)

VGS = 10V

3.0

0
0

2
3
V DS , DRAIN-SOURCE VOLTAGE (V)

5 .0
6 .0

7 .0
8 .0

1 .5

9 .0
10
1

0 .5

0 .8
1 .2
I D , DRA IN CURRENT (A)

1 .6

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current

V GS = 10V

I D = 500m A
R DS(on) , NORMALIZED

1.75

1.5

1.25

0.75

0.5
-5 0

-2 5

0
25
50
75
100
TJ , JUNCTION T EMPERATURE (C)

125

DRAIN-SOURCE ON-RESISTANCE

R DS(ON) , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0 .4

Figure 1. On-Region Characteristics

V GS = 10V
2 .5

TJ = 1 2 5 C

1 .5

25C
1

-55C
0 .5

150

Figure 3. On-Resistance Variation

with Temperature

0 .4

0 .8
1 .2
I D , DRAIN CURRENT (A)

1 .6

Figure 4. On-Resistance Variation with Drain

Current and Temperature

T J = -55C

25C
125C

1.6

1.2

0.8

0.4

0
0

2
V

GS

4
6
8
, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

10

Vth , NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE

1 .1

VDS = 10V
ID , DRAIN CURRENT (A)

4 .5

2 .5

V DS = VGS

1 .0 5

I D = 1 mA

0 .9 5

0 .9

0 .8 5

0 .8
-50

-25

0
25
50
75
100
TJ , JUNCTION TEM PERATURE (C)

125

150

Figure 6. Gate Threshold Variation with

Temperature

2N7000.SAM Rev. A1

Typical Electrical Characteristics (continued)

2N7000 / 2N7002 /NDS7002A
2

I D = 250A

1.05
1.025
1
0.975
0.95
0.925
-50

-25

V GS = 0V

1.075

IS , REVERSE DRAIN CURRENT (A)

BV DSS , NORMALIZED

DRAIN-SOURCE BREAKDOWN VOLTAGE

1.1

0
25
50
75
100
TJ , JUNCTION TEM PERATURE (C)

125

0 .5

TJ = 1 2 5 C
0 .1

25C

0 .0 5

-5 5 C

0 .0 1
0 .0 0 5

0 .0 0 1
0 .2

150

0 .6
0 .8
1
1 .2
, BODY DIODE FORW A RD VOLTAGE (V)

1 .4

Figure 8. Body Diode Forward Voltage Variation with

Figure 7. Breakdown Voltage Variation

with Temperature

10

60

V DS = 2 5 V
VGS , GATE-SOURCE VOLTAGE (V)

40

C iss
20

CAPACITANCE (pF)

0 .4
V SD

C oss
10

C rss
f = 1 MHz

V GS = 0V

ID = 5 0 0 m A
4

280m A
115m A

0
1

3
V DS

5
10
20
, DRAIN TO SOURCE VOLTAGE (V)

30

50

Figure 9. Capacitance Characteristics

0 .4

0 .8
1 .2
Q g , GATE CHARGE (nC)

t d(on)

VGS

R GEN

tr

RL

t d(off)

tf
90%

90%

V OUT

Output, Vout

10%

10%

90%

DUT

Input, Vin
S

Figure 11.

t off

t on

Figure 10. Gate Charge Characteristics

VDD
V IN

1 .6

Inverted

50%

50%

10%

Pulse Width

Figure 12. Switching Waveforms

2N7000.SAM Rev. A1

3
2

3
2

0.5

S(

RD

Lim

)
ON

10

it

1m
10
ms
10
0m
s
1s

0.1
0.05

V GS = 10V

10
s
DC

SINGLE PULSE
T A = 25C

0.01

0u

ID , DRAIN CURRENT (A)

I D , DRAIN CURRENT (A)

Typical Electrical Characteristics (continued)

10

0.5
RD

1m

10

0.1

10

0.05

0.01

0m

0u

ms

1s
10
s
DC

VGS = 10V
SINGLE PULSE
T A = 25C

0.005

0.005
1

5
10
20
30
V DS , DRAIN-SOURCE VOLTAGE (V)

60

80

Figure 13. 2N7000 Maximum

Safe Operating Area
3
2
1
I D , DRAIN CURRENT (A)

S(O

Lim
N)

it

RD

S(O

N)

Lim

10
1m

0.5

0.1

10

0.05

V GS = 10V

60

80

0u

ms

1s
10
s
DC

SINGLE PULSE
T A = 25C

0.01

0m

5
10
20
30
V DS , DRAIN-SOURCE VOLTAGE (V)

Figure 14. 2N7002 Maximum

Safe Operating Area

it

10

0.005
1

5
10
20
30
V DS , DRAIN-SOURCE VOLTAGE (V)

60

80

Figure 15. NDS7000A Maximum

Safe Operating Area

TRANSIENT THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE

1
D = 0.5

0.5

R JA (t) = r(t) * R JA
R JA = (See Datasheet)

0 .2

0.2

0.1

0.1

P(pk)
0.05

t1

0.05
0 .02
Single Pulse

0.02
0.01
0.0001

0.001

t2

TJ - T A = P * RJA (t)
Duty Cycle, D = t1 /t2

0.01

0.01

0.1
t 1, TIME (sec)

10

100

300

Figure 16. TO-92, 2N7000 Transient Thermal Response Curve

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

1
0.5

D = 0.5

0.2

0 .2

0.1
0.05

R JA (t) = r(t) * R JA
R JA = (See Datasheet)

0.1
0 .0 5
0 .0 2

P(pk)

0 .0 1

t1

0.01

t2

Single Pulse

TJ - T A = P * RJA (t)
Duty Cycle, D = t1 /t2

0.002
0.001
0.0001

0.001

0.01

0.1
t1 , TIME (sec)

10

100

300

Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve

2N7000.SAM Rev. A1

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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
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user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G

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