FQA13N50CF

FQA13N50CF
N-Channel QFET FRFET MOSFET

500 V, 15 A, 480 m
Features
Description
15 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,

ID = 7.5 A
This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductors proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
Low Gate Charge (Typ. 43 nC)

Low Crss (Typ. 20 pF)
100% Avalanche Tested
Fast Recovery Body Diode (Typ. 100 ns)
G
D
TO-3PN
Absolute Maximum Ratings

Symbol
TC = 25C unless otherwise noted.
Parameter
FQA13N50CF
Unit
VDSS
Drain-Source Voltage
500
ID
Drain Current
- Continuous (TC = 25C)
15
IDM
Drain Current
- Pulsed
- Continuous (TC = 100C)

(Note 1)
9.5
60
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
15
EAR
Repetitive Avalanche Energy
(Note 1)
21.8
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25C)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,

1/8''"from case for 5 seconds
- Derate above 25C
30
860
mJ
4.5
V/ns
218
1.56
W/C
-55 to +150
300
Thermal Characteristics
FQA13N50CF
Unit
RJC
Thermal Resistance, Junction-to-Case, Max.
0.58
C/W
RJS
Thermal Resistance, Case-to-Sink, Typ.
0.24
C/W
RJA
Thermal Resistance, Junction-to-Ambient, Max.
40
C/W
Symbol
Parameter
2007 Fairchild Semiconductor Corporation

FQA13N50CF Rev C2
www.fairchildsemi.com
FQA13N50CF N-Channel QFET FRFET MOSFET
May 2014
Part Number
FQA13N50CF
Top Mark
FQA13N50CF
Electrical Characteristics
Symbol
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
TC = 25C unless otherwise noted.
Parameter
Test Conditions
Min
Typ
Max
Unit
500
--
--
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A
BVDSS/
TJ
Breakdown Voltage Temperature Coefficient
ID = 250 A, Referenced to 25C
--
0.5
--
V/C
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
--
VDS = 400 V, TC = 125C
--
--
10
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 A
2.0
--
4.0
RDS(on)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 7.5A
--
0.43
0.48
gFS
Forward Transconductance
VDS = 40 V, ID = 7.5 A
--
15
--
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1580
2055
pF
--
180
235
pF
--
20
25
pF
--
25
60
ns
--
100
210
ns
--
130
270
ns
--
100
210
ns
--
43
56
nC
--
7.5
--
nC
--
18.5
--
nC
15
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
VDD = 250 V, ID = 15A,

RG = 25
(Note 4)
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 400 V, ID = 15A,

VGS = 10 V
(Note 4)
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings

IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
60
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 15 A
--
--
1.4
trr
Reverse Recovery Time
100
--
ns
Reverse Recovery Charge
VGS = 0 V, IS = 15 A,
dIF / dt = 100 A/s
--
Qrr
--
0.4
--
NOTES:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 5.6 mH, IAS = 15 A, VDD = 50 V, RG = 25 , starting TJ = 25C.
3. ISD 15 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C.
4. Essentially independent of operating temperature typical characteristics.

FQA13N50CF Rev C2
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
10
10
10
150C
-55C
25C
10
Notes :
1. 250us Pulse Test
2. TC = 25C
Notes :
1. VDS = 40V
10
-1
10
2. 250s Pulse Test
-1
-1
10
10
10
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperatue
1.5
IDR, Reverse Drain Current [A]
RDS(ON) [],
Drain-Source On-Resistance
VGS = 10V
1.0
VGS = 20V
0.5
Note : TJ = 25C
10
10
150C
Notes :
1. VGS = 0V
25C
2. 250s Pulse Test

-1
10
15
20
25
30
10
35
0.2
0.4
0.6
0.8
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics

12
3000
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
Coss = Cds + Cgd
10
VGS, Gate-Source Voltage [V]
Crss = Cgd
2500
Ciss
Capacitance [pF]
1.0
2000
Coss
1500
Notes ;
1. VGS = 0 V
1000
Crss
2. f = 1 MHz
500
VDS = 250V
VDS = 400V
2
Note : ID = 15A
0
-1
10
10
10

FQA13N50CF Rev C2
10
20
30
40
50
QG, Total Gate Charge [nC]
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2. ID = 250 A
2.5
2.0
1.5
1.0
Notes :
1. VGS = 10 V
0.5
2. ID = 7.5 A
0.8
-100
-50
50
100
150
0.0
-100
200
-50
50
100
150
200
TJ, Junction Temperature [C]
TJ, Junction Temperature [C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current

vs. Case Temperature
16
Operation in This Area
is Limited by R DS(on)
14
10 s
12
100 s
10
1 ms
10
10 ms
100 ms
DC
10
Notes :
1. TC = 25C
2. TJ = 150C
10
10
8
6
4
2
3. Single Pulse
-1
10
10
0
25
10
10
50
75
100
125
150
TC, Case Temperature [C]
Figure 11. Transient Thermal Response Curve
ZJ C(t), Thermal Response [oC/W]
10
D = 0 .5
0 .2
10
N o te s :
1 . Z J C ( t) = 0 .5 8 C /W M a x .
-1
2 . D u ty F a c to r , D = t 1 / t 2
0 .1
3 . T J M - T C = P D M * Z J C ( t)
0 .0 5
PDM
0 .0 2
t1
0 .0 1
10
s in g le
e
-2
10
-5
10
-4
t2
u ls e
10
-3
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

FQA13N50CF Rev C2
Typical Performance Characteristics
50K
50K
200nF
200n
F
12V
VGS
Same
Same Type
as DU
DUT
T
Qg
10V
300nF
300n
F
VDS
VGS
Qgs
Qgd
DUT
DU
T
IG = const.
Charrge
Cha
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
DU
T
VGS
10%
10%
td(on
d( on))
tr
td(o
d( of f)
t on
t of
offf
tf
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDS
DSS
S - VDD
L
BVDS
DSS
S
IAS
ID
RG
VGS
VDD
ID (t)
VDS (t)
VDD
DUT
tp
tp
Ti
Tim
me
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

FQA13N50CF Rev C2
DUT
+
VDS
_
I SD
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current

di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

FQA13N50CF Rev C2
Mechanical Dimensions
Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003

FQA13N50CF Rev C2
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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As used here in:
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Advance Information
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Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
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Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I68

FQA13N50CF Rev C2
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FQA13N50CF

N-Channel QFET FRFET MOSFET

15 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,

This N-Channel enhancement mode power MOSFET is

Low Gate Charge (Typ. 43 nC)

Absolute Maximum Ratings

TC = 25C unless otherwise noted.

- Continuous (TC = 25C)

- Continuous (TC = 100C)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (TC = 25C)

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

- Derate above 25C

Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Case-to-Sink, Typ.

Thermal Resistance, Junction-to-Ambient, Max.

2007 Fairchild Semiconductor Corporation

FQA13N50CF N-Channel QFET FRFET MOSFET

TC = 25C unless otherwise noted.

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

ID = 250 A, Referenced to 25C

Zero Gate Voltage Drain Current

VDS = 500 V, VGS = 0 V

VDS = 400 V, TC = 125C

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

Gate Threshold Voltage

VDS = VGS, ID = 250 A

Static Drain-Source On-Resistance

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

VDD = 250 V, ID = 15A,

Turn-Off Fall Time

Total Gate Charge

VDS = 400 V, ID = 15A,

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

2007 Fairchild Semiconductor Corporation

FQA13N50CF N-Channel QFET FRFET MOSFET

Package Marking and Ordering Information

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

ID, Drain Current [A]

ID, Drain Current [A]

2. 250s Pulse Test

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

IDR, Reverse Drain Current [A]

2. 250s Pulse Test

ID, Drain Current [A]

VSD, Source-Drain voltage [V]