2SK3883 PDF

DATE
DRAWN Sep.-16-'04
CHECKED Sep.-16-'04
CHECKED Sep.-16-'04
NAME
APPROVED
DWG.NO.
This m aterial and the inform ation herein is the p roperty of Fuji Electric
Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purp os es w ithout the express w ritten cons ent of
Fuji Electric Device Technolog y C o. ,Ltd.
SPECIFICATION
Device Name
:
Power MOSFET
Type Name
:
2SK3883-01
Spec. No.
:
MS5F5910
Date
:
Sep.-16-2004
Fuji Electric Device Technology Co.,Ltd.
MS5F5910
1 / 18
H04-004-05
Date
Sep.-16
2004
Classification
Index
DWG.NO.
Revised Records
Content
Drawn Checked Checked Approved
enactment
MS5F5910
2 / 18
H04-004-03
1.Scope
This specifies Fuji Power MOSFET 2SK3883-01
2.Construction
N-Channel enhancement mode power MOSFET
3.Applications
for Switching
4.Outview
TO-247
Outview See to 8/18 page
5.Absolute Maximum Ratings at Tc=25

C (unless otherwise specified)
Description
Symbol
Characteristics
Unit
VDS
200
VDSX
200
Continuous Drain Current
ID
100
Pulsed Drain Current
IDP
400
Gate-Source Voltage
VGS
30
Repetitive and Non-repetitive

Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
VGS=-30V
IAR
100
Note *1
EAS
2608.7
mJ
Note *2
EAR
60
mJ
Note *3
Maximum Drain-Source dV/dt
dVDS/dt
20
kV/s VDS200V
Peak Diode Recovery dV/dt
dV/dt
kV/s Note *4
Maximum Power Dissipation
PD
600
W
2.50
Tc=25C
Ta=25C
Operating and Storage
Tch
150
Temperature range
Tstg
-55 to +150
6.Electrical Characteristics at Tc=25

C (unless otherwise specified)
Static Ratings
Description
Symbol
Conditions
min.
typ.
max.
Unit
200
3.0
5.0
25
ID=250A
Drain-Source
Breakdown Voltage BVDSS
Gate Threshold
Voltage VGS(th)
Zero Gate Voltage
Drain Current IDSS
Gate-Source
Leakage Current IGSS
Drain-Source
On-State Resistance RDS(on)
VGS=0V
ID=250A
VDS=VGS
VDS=200V
Tch=25
C
VGS=0V
VDS=160V
Tch=125
C
VGS=0V
A
-
250
100
nA
15.4
20
VGS= 30V
VDS=0V
ID=50A
VGS=10V
DWG.NO.
Drain-Source Voltage
Remarks
MS5F5910
3 / 18
H04-004-03
Dynamic Ratings
Description
Symbol
Conditions
min.
typ.
max.
Unit
VDS=25V
12
24
ID=50A
Forward
Transconductance gfs
Input Capacitance
Ciss
VDS=75V
6500
9750
Output Capacitance
Coss
VGS=0V
760
1140
44
66
Reverse Transfer
f=1MHz
Capacitance Crss
td(on)
Vcc =48V
56
84
tr
VGS=10V
150
225
td(off)
ID=50A
104
156
Turn-Off Time
tf
RGS=10
44
66
Total Gate Charge
QG
Vcc =100V
140
210
Gate-Source Charge
QGS
ID=100A
52
78
Gate-Drain Charge
QGD
VGS=10V
46
69
min.
typ.
max.
Unit
1.20
1.50
320
ns
3.5
min.
typ.
max.
Unit
Turn-On Time
ns
nC
Reverse Diode
Description
Symbol
Conditions
IF=100A
Diode Forward
On-Voltage VSD
VGS=0V
Tch=25
C
IF=100A
Reverse Recovery
Time trr
Reverse Recovery
VGS=0V
-di/dt=100A/s
Charge Qrr
Tch=25
C
7.Thermal Resistance
Description
Symbol
Channel to Case
Rth(ch-c)
0.208
C/W
Channel to Ambient
Rth(ch-a)
50
C/W
Note *1 : Tch150
C, See Fig.1 and Fig.2
Note *2 : Starting Tch=25
C,IAS=40A,L=2.61mH,Vcc=48V,RG =50,See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
See to the 'Avalanche Energy' graph of page 17/18.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Thermal impedance' graph of page 18/18.
Note *4 : IF-ID,-di/dt=50A/s,VccBVDSS,Tch150
C
DWG.NO.
pF
MS5F5910
4 / 18
H04-004-03
50
DWG.NO.
Fig.1 Test circuit

L
D.U.T
Vcc
Fig.2 Operating waveforms
+10V
VGS
-15V
IDP
BVDSS
VDS
ID
MS5F5910
5 / 18
H04-004-03
8.Reliability test items

All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs).
Each categories under the guaranteed reliability conform to EIAJ ED4701 B101A standards.
Test items required without fail : Test Method B-121,B-122,B-123,B-131,B-141
Humidification treatment (852C,655%RH,16824hr)
Heat treatment of soldering (Solder Dipping,2605C(265Cmax.),101sec,2 times)
Tes t
No.
Tes t
Items
2 Terminal
Strength
(Bending)
Mechanical test methods
3 Mounting
Strength
4 Vibration
5 Shock
6 Solderability
Pull forc e
TO-220,TO-220F : 10N
TO-3P,TO-3PF,TO-247 : 25N
TO-3PL : 45N
T-Pack ,K-Pac k : 10N
Force maintaining duration :305s ec
Load forc e
TO-220,TO-220F : 5N
TO-3P,TO-3PF,TO-247 : 10N
TO-3PL : 15N
T-Pack ,K-Pac k : 5N
Number of times :2times (90deg./time)
Screwing torque value: (M3)
TO-220,TO-220F : 4010Ncm
TO-3P,TO-3PF,TO-247 : 5010Ncm
TO-3PL : 7010Ncm
frequenc y : 100Hz to 2k Hz
Acc eleration : 100m/s 2
Sweeping time : 20min./1 c yc le
6times for each X,Y&Z directions.
Peak amplitude: 15km/s 2
Duration time : 0.5ms
3times for each X,Y&Z directions.
Referenc e
Standard
EIAJ ED4701
Sampling
number
A-111A
method 1
15
A-111A
method 3
15
(0:1)
A-112
method 2
15
A-121
test c ode C
15
A-122
test c ode D
A-131A
Eac h terminal shall be immers ed in
test c ode A
the s older bath within 1 to 1.5mm from
the body.
7 Res is tance to
Soldering Heat
Ac ceptanc e
number
15
Solder temp. : 2355

C
Immersion time : 50.5sec
Solder temp. : 2605

C
Immersion time : 101sec
Number of times : 2times
A-132
DWG.NO.
1 Terminal
Strength
(Tensile)
Tes ting methods and Conditions
MS5F5910
15
15
6 / 18
H04-004-03
Tes t
Item s
Tes ting m ethods and Conditions
1 High Tem p.
S torage
2 Low Temp.
S torage
3 Tem perature
Hum idity
S torage
4 Tem perature
Hum idity
B IA S
Tem perature : 150+0/-5C

Tes t duration : 1000hr
Tem perature : -55+5/-0C
Tem perature : 852C
Relative humidity : 855%
Tem perature : 852C
B ias V oltage : V D S (max) * 0.8
5 Uns aturated
P res suriz ed
V apor

Tem perature : 1302C
V apor pres sure : 230k Pa
6 Tem perature
Cyc le
High temp.side : 1505

C
Low temp.side : -555
C
7 Thermal Shoc k
Duration time : HT 30m in,LT 30min

Num ber of cy cles : 100cy cles
Fluid : pure water(running water)
Referenc e
S tandard
E IA J ED4701
B -111A
S ampling
number
Ac ceptanc e
number
22
B -112A
22
B -121A
test c ode C
22
B -122A
test c ode C
22
B -123A
test c ode C
22
B -131A
test c ode A
22
B -141A
test c ode A
22
D-322
22
(0:1)
High temp.side : 100+0/-5

C
Low temp.side : 0+5/-0
C
Test for FET
Duration time : HT 5min,LT 5min

Num ber of cy cles : 100cy cles
1 Intermittent
Operating
Life
T a=255
C
Tc=90degree
T chT ch(max.)
2 HTRB
(Gate-s ourc e)
Tes t duration : 3000 c yc le

B ias V oltage : V GS (max)
D-323
22
3 HTRB
(Drain-S ourc e)

B ias V oltage : V D S (max)
D-323
22
(0:1)
Failure Criteria
Symbols
Item
Failure Criteria
Lower Limit
Upper Limit
Breakdown Voltage
BVDSS
Zero gate Voltage Drain-Source Current
IDSS
Gate-Source Leakage Current
IGSS
Gate Threshold Voltage
VGS(th)
Drain-Source on-state Resistance
RDS(on)
-----
Forward Transconductance
gfs
Diode forward on-Voltage
VSD
Unit
LSL * 1.0
-----
-----
USL * 2
-----
USL * 2
LSL * 0.8
USL * 1.2
USL * 1.2
LSL * 0.8
-----
-----
USL * 1.2
Marking
Soldering
-----
With eyes or Microscope
-----
and other damages

* LSL : Lower Specification Limit
* USL : Upper Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
have conducted after drying the package surface for more than an hour at 150C.
DWG.NO.
Outview
Electrical
Characteristics
Climatic test methods
Tes t
No.
MS5F5910
7 / 18
H04-004-03
DWG.NO.
MS5F5910
8 / 18
H04-004-03
9. Cautions
Although Fuji Electric is continually improving product quality and reliability, a small percentage of
semiconductor products may become faulty. When using Fuji Electric semiconductor products in your
equipment, you are requested to take adequate safety measures to prevent the equipment from
causing physical injury, fire, or other problem in case any of the products fail. It is recommended to
make your design fail-safe, flame retardant, and free of malfunction.
The products described in this Specification are intended for use in the following electronic and electrical
equipment which has normal reliability requirements.
Computers
OA equipment
Communications equipment(Terminal devices)
Machine tools
AV equipment
Measurement equipment
Personal equipment
Industrial robots
Electrical home appliances etc.
The products described in this Specification are not designed or manufactured to be used in equipment
equipment listed below, first check the system construction and required reliability, and take adequate
safety measures such as a backup system to prevent the equipment from malfunctioning.
Backbone network equipment
etc.)
Transportation equipment (automobiles, trains, ships,
Traffic-signal control equipment
Gas alarms, leakage gas auto breakers
Submarine repeater equipment
Burglar alarms, fire alarms, emergency equipment
Medical equipment
Nuclear control equipment etc.
Do not use the products in this Specification for equipment requiring strict reliability such as(but not
limited to):
Aerospace equipment
Aeronautical equipment
10. Warnings
The MOSFETs should be used in products within their absolute maximum rating(voltage, current,
temperature, etc.).
The MOSFETs may be destroyed if used beyond the rating.
We only guarantee the non-repetitive and repetitive Avalanche capability and not for the continuous
Avalanche capability which can be assumed as abnormal condition .Please note the device may be
destructed from the Avalanche over the specified maximum rating.
The equipment containing MOSFETs should have adequate fuses or circuit breakers to prevent the
equipment from causing secondary destruction (ex. fire, explosion etc...).
Use the MOSFETs within their reliability and lifetime under certain environments or conditions. The
MOSFETs may fail before the target lifetime of your products if used under certain reliability conditions.
Be careful when handling MOSFETs for ESD damage. (It is an important consideration.)
Wh
enhandl
i
n
gMOSFETs
,
h
ol
dt
hem byt
h
ec
as
e(
pack
age)anddon
tt
ou
cht
h
el
eadsan
dt
er
mi
nal
s
.
It is recommended that any handling of MOSFETs is done on grounded electrically conductive floor
and tablemats.
DWG.NO.
or systems used under life-threatening situations. If you are considering using these products in the
MS5F5910
9 / 18
H04-004-03
Before touching a MOSFET terminal, Discharge any static electricity from your body and clothes by
grounding out through a high impedance resistor (about 1M
When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron or
soldering bath through a low impedance resistor.
You must design the MOSFETs to be operated within the specified maximum ratings(voltage, current,
temperature, etc.) to prevent possible failure or destruction of devices.
Consider the possible temperature rise not only for the channel and case, but also for the outer leads.
Do not directly touch the leads or package of the MOSFETs while power is supplied or during operation in
order to avoid electric shock and burns.
The MOSFETs are made of incombustible material. However, if a MOSFET fails, it may emit smoke or
flame. Also, operating the MOSFETs near any flammable place or material may cause the MOSFETs to
emit smoke or flame in case the MOSFETs become even hotter during operation. Design the arrangement to prevent the spread of fire.
The MOSFETs should not used in an environment in the presence of acid, organic matter, or corrosive
gas(hydrogen sulfide, sulfurous acid gas etc.)
Installation
Soldering involves temperatures which exceed the device storage temperature rating. To avoid device
damage and to ensure reliability, observe the following guidelines from the quality assurance standard.
Solder temperature and duration (through-hole package)
Solder temperature
2605
C
35010
C
Duration
101 seconds
3.50.5 seconds
The immersion depth of the lead should basically be up to the lead stopper and the distance should be a
maximum of 1.5mm from the device.
When flow-soldering, be careful to avoid immersing the package in the solder bath.
Refer to the following torque reference when mounting the device on a heat sink. Excess torque applied
to the mounting screw causes damage to the device and weak torque will increase the thermal resistance, both of which conditions may destroy the device.
Table 1: Recommended tightening torques.
Package style
TO-220
TO-220F
TO-3P
TO-3PF
TO-247
TO-3PL
Screw
Tightening torques
M3
30 50 Ncm
M3
40 60 Ncm
M3
60 80 Ncm
DWG.NO.
The MOSFETs should not used in an irradiated environment since they are not radiation-proof.
Note
flatness : < 30m
roughness : <10m
Plane off the edges :
C<1.0mm
MS5F5910
10 / 18
H04-004-03
The heat sink should have a flatness within30

m and roughness within 10 m. Also, keep the tightening torque within the limits of this specification.
Improper handling may cause isolation breakdown leading to a critical accident.
ex.) Over plane off the edges of screw hole. (Recommended plane off the edge is C<1.0mm)
We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to
evenly apply the compound and to eliminate any air voids.
Storage
The MOSFETs must be stored at a standard temperature of 5 to 35
C and relative humidity of 45 to
75%.
If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or
boiled water, since the chlorine in tap water may corrode the leads.
The MOSFETs should not be subjected to rapid changes in temperature to avoid condensation on the
surface of the MOSFETs. Therefore store the MOSFETs in a place where the temperature is steady.
The MOSFETs should not be stored on top of each other, since this may cause excessive external force
The MOSFETs should be stored with the lead terminals remaining unprocessed. Rust may cause
presoldered connections to fail during later processing.
The MOSFETs should be stored in antistatic containers or shipping bags.
11.Appendix
These products do not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated Diphenyl
Ether ).
Th
es
epr
odu
c
t
sdon
otc
on
t
ai
nCl
as
s
I
ODSan
dCl
as
sI
I
ODSof
Cl
eanAi
rAc
t
ofUS
.
If you have any questions about any part of this Specification, please contact Fuji
Electric or its sales agent before using the product.
Neither Fuji nor its agents shall be held liable for any injury caused by using the products
not in accordance with the instructions.
The application examples described in this specification are merely typical uses of Fuji
Electric products.
This specification does not confer any industrial property rights or other rights, nor
constitute a license for such rights.
DWG.NO.
on the case.
MS5F5910
11 / 18
H04-004-03
160
25
50
20V
DWG.NO.
ID [A]
PD [W]
Allowable Power Dissipation

PD=f(Tc)
800
700
600
500
400
300
200
100
0
75
100
10V
80
20
5
VDS [V]
125
150
Tc [
C]
Typical Output Characteristics

ID=f(VDS):80 s pulse test,Tch=25
C
8V
140
120
100
7V
60
40
6.5V
VGS=6.0V
10
MS5F5910
12 / 18
H04-004-03
0.1
1
2
3
4
5
VGS[V]
DWG.NO.
gfs [S]
ID[A]
Typical Transfer Characteristic

ID=f(VGS):80 s pulse test,VDS=25V,Tch=25
C
100
10
0.1
1
7
10
8
9
10
Typical Transconductance
gfs=f(ID):80 s pulse test,VDS=25V,Tch=25
C
100
10
0.1
100
ID [A]
MS5F5910
13 / 18
H04-004-03
RDS(on) [ ]
VGS=6V
-50
-25
6.5V
25
DWG.NO.
RDS(on) [ ]
0.10
Typical Drain-Source on-state Resistance

RDS(on)=f(ID):80 s pulse test,Tch=25
C
7V
0.08
0.06
0.04
8V 10V
0.02
20V
0.00
10 20 30 40 50 60 70 80 90 100 110 120 130 140
ID [A]
Drain-Source On-state Resistance

RDS(on)=f(Tch):ID=50A,VGS=10V
0.10
0.08
0.06
0.04
max.
0.02
typ.
0.00
50
Tch [
C]
75
100
125
150
MS5F5910
14 / 18
H04-004-03
VGS(th) [V]
5.0
3.0
-50
0
-25
0
50
25
DWG.NO.
VGS [V]
Gate Threshold Voltage vs. Tch

VGS(th)=f(Tch):VDS=VGS,ID=250A
7.0
6.5
6.0
5.5
max.
4.5
4.0
3.5
min.
2.5
2.0
1.5
1.0
0.5
0.0
50
75
Tch [
C]
100
150
100
200
125
150
Typical Gate Charge Characteristics

VGS=f(Qg):ID=100A,Tch=25
C
14
12
Vcc= 40V
10
100V
8
160V
250
Qg [nC]
MS5F5910
15 / 18
H04-004-03
10
-1
10
0.1
0.00
0.25
0
0.50
10
0.75
DWG.NO.
IF [A]
C [pF]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10
Ciss
10
Coss
10
2
Crss
10
10
0
10
1.00
1.25
2
1.50
10
1.75
MS5F5910
3
VDS [V]
Typical Forward Characteristics of Reverse Diode

IF=f(VSD):80 s pulse test,Tch=25
C
1000
100
10
2.00
VSD [V]
16 / 18
H04-004-03
t [ns]
4
10
3
10
10
1
10
0
10
-1
0
10
0
25
10
50
DWG.NO.
EAV [mJ]
10
Typical Switching Characteristics vs. ID

t=f(ID):Vcc=72V,VGS=10V,RG=10
td(off)
tr
td(on)
tf
10
75
100
10
125
ID [A]
Maximum Avalanche Energy vs. starting Tch

E(AV)=f(starting Tch):Vcc=48V,I(AV)<=100A
3500
3000
IAS=40A
2500
2000
IAS=60A
1500
IAS=100A
1000
500
150
starting Tch [
C]
MS5F5910
17 / 18
H04-004-03
10-8
10
10
10-3
10-6
10-7
10-5
10-6
10-4
DWG.NO.
Zth(ch-c) [/W]
Avalanche Current I AV [A]
Maximum Avalanche Current Pulsewidth

IAV=f(tAV):starting Tch=25
C,Vcc=48V
10
Single Pulse
10
1
10
0
10
-1
10
-2
10-5
10-4
tAV [sec]
Transient Thermal Impedance

Zth(ch-c)=f(t):D=0
100
-1
10-2
10-3
10-2
10-3
10-2
10-1
100
t [sec]
MS5F5910
18 / 18
H04-004-03

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DATE

Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co.,Ltd.

This specifies Fuji Power MOSFET 2SK3883-01

N-Channel enhancement mode power MOSFET

Outview See to 8/18 page

5.Absolute Maximum Ratings at Tc=25

Continuous Drain Current

Pulsed Drain Current

Repetitive and Non-repetitive

Maximum Drain-Source dV/dt

Peak Diode Recovery dV/dt

Maximum Power Dissipation

Operating and Storage

6.Electrical Characteristics at Tc=25

Fuji Electric Device Technology Co.,Ltd.

Total Gate Charge

Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co.,Ltd.

Fig.1 Test circuit

Fig.2 Operating waveforms

8.Reliability test items

Mechanical test methods

Solder temp. : 2355

Solder temp. : 2605

Fuji Electric Device Technology Co.,Ltd.

Tes ting methods and Conditions

Tes ting m ethods and Conditions

Tem perature : 150+0/-5C

Tes t duration : 1000hr

High temp.side : 1505

Duration time : HT 30m in,LT 30min

High temp.side : 100+0/-5

Test for FET

Duration time : HT 5min,LT 5min

Tes t duration : 3000 c yc le

Tes t duration : 1000hr

Tes t duration : 1000hr

Zero gate Voltage Drain-Source Current

Gate-Source Leakage Current

Gate Threshold Voltage

Drain-Source on-state Resistance

Diode forward on-Voltage

With eyes or Microscope

and other damages

Fuji Electric Device Technology Co.,Ltd.

Climatic test methods

Fuji Electric Device Technology Co.,Ltd.

Communications equipment(Terminal devices)

Electrical home appliances etc.

Transportation equipment (automobiles, trains, ships,

Traffic-signal control equipment

Gas alarms, leakage gas auto breakers

Submarine repeater equipment

Burglar alarms, fire alarms, emergency equipment

Nuclear control equipment etc.

Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co.,Ltd.

The heat sink should have a flatness within30

Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co.,Ltd.

Allowable Power Dissipation