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Applications Load Switch DC/DC Conversion Benefits Low Gate Charge and Low R D S (

Applications

Load Switch DC/DC Conversion

Benefits

Low Gate Charge and Low R DS(on)

Fully Characterized Avalanche Voltage

and Current 20V V GS Max. Gate Rating

100% Tested for R G

Lead-Free (Qualified to 260°C Reflow)

RoHS Compliant (Halogen Free)

Description

97145

IRF8313PbF

HEXFET Power MOSFET

V

DSS

R DS(on) max

Qg

30V

15.5m @V GS = 10V

6.0nC

S2 1 D2 8 G2 2 7 D2 S1 3 D1 6 G1 4 D1
S2
1 D2
8
G2
2 7
D2
S1
3 D1
6
G1
4 D1
5
SO-8

SO-8

The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.

Absolute Maximum Ratings

 

Parameter

 

Max.

Units

V DS

Drain-to-Source Voltage

 

30

V

V GS

Gate-to-Source Voltage

 

±20

I D @ T A = 25°C

Continuous Drain Current, V GS @ 10V

 

9.7

 

I D @ T A = 70°C

Continuous Drain Current, V GS @ 10V

 

8.1

A

I DM

Pulsed Drain Current

 

81

P D @T A = 25°C

Power Dissipation

 

2.0

W

P D @T A = 70°C

Power Dissipation

 

1.3

 

Linear Derating Factor

 

0.016

W/°C

T

J

Operating Junction and

-55

to + 175

 

T

STG

Storage Temperature Range

 

°C

Thermal Resistance

 

Parameter

Typ.

Max.

Units

R θJL

Junction-to-Drain Lead

–––

42

°C/W

R θJA

Junction-to-Ambient

–––

62.5

Notes through are on page 9

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

www.irf.com

1

11/5/08

Static @ T J = 25°C (unless otherwise specified)     Parameter Min. Typ. Max.

Static @ T J = 25°C (unless otherwise specified)

   

Parameter

Min.

Typ.

Max.

Units

 

Conditions

 

BV DSS

Drain-to-Source Breakdown Voltage

30

–––

–––

V

V

GS = 0V, I D = 250μA

 

ΔΒV DSS /ΔT J

Breakdown Voltage Temp. Coefficient

–––

0.021

–––

V/°C

Reference to 25°C, I D = 1mA

 

R

DS(on)

Static Drain-to-Source On-Resistance

–––

12.5

15.5

 

V

GS = 10V, I D = 9.7A

 

–––

18.6

21.6

mΩ

V

GS = 4.5V, I D = 8.0A

 

V

GS(th)

Gate Threshold Voltage

1.35

1.80

2.35

V

V

DS = V GS , I D = 25μA

 

ΔV GS(th)

Gate Threshold Voltage Coefficient

–––

-6.0

–––

mV/°C

 

I

DSS

 

Drain-to-Source Leakage Current

–––

–––

1.0

μA

V

DS = 24V, V GS = 0V

 

–––

–––

150

V

DS = 24V, V GS = 0V, T J = 125°C

I

GSS

 

Gate-to-Source Forward Leakage

–––

–––

100

nA

V

GS = 20V

 

Gate-to-Source Reverse Leakage

–––

–––

-100

V

GS = -20V

 

gfs

 

Forward Transconductance

23

–––

–––

S

V

DS = 15V, I D = 8.0A

 

Q

g

Total Gate Charge

–––

6.0

9.0

   
   

Q

gs1

Pre-Vth Gate-to-Source Charge

–––

1.5

–––

V

DS = 15V

   

Q

gs2

Post-Vth Gate-to-Source Charge

–––

0.9

–––

nC

V

GS = 4.5V

   

Q

gd

Gate-to-Drain Charge

–––

2.2

–––

I D = 8.0A

 
   

Q

godr

Gate Charge Overdrive

–––

1.4

–––

 

See Figs. 17a & 17b

 

Q

sw

Switch Charge (Q gs2 + Q gd )

–––

2.9

–––

 
 

Q

oss

Output Charge

–––

3.8

–––

nC

V

DS = 16V, V GS = 0V

 

R

g

Gate Resistance

–––

2.2

3.6

Ω

 

t

d(on)

 

Turn-On Delay Time

–––

8.3

–––

 

V

DD = 15V, V GS = 4.5V

t

r

Rise Time

–––

9.9

–––

I D = 8.0A

 

t

d(off)

 

Turn-Off Delay Time

–––

8.5

–––

ns

R

G = 1.8Ω

t

f

Fall Time

–––

4.2

–––

See Fig. 15a & 15b

 
 

C

iss

Input Capacitance

–––

760

–––

 

V

GS = 0V

 

C

oss

Output Capacitance

–––

172

–––

pF

V

DS = 15V

 

C

rss

Reverse Transfer Capacitance

–––

87

–––

ƒ

= 1.0MHz

Avalanche Characteristics

 
   

Parameter

 

Typ.

 

Max.

Units

 

E

AS

 

Single Pulse Avalanche Energy

 

–––

 

46

mJ

I

AR

 

Avalanche Current

 

–––

 

8.0

A

Diode Characteristics

   

Parameter

Min.

Typ.

Max.

Units

 

Conditions

I

S

Continuous Source Current

–––

–––

   

MOSFET symbol

showing the

integral reverse

p-n junction diode.

D G S
D
G
S

(Body Diode)

3.1

A

I

SM

Pulsed Source Current

–––

–––

   

(Body Diode)

82

A

 

V

SD

Diode Forward Voltage

–––

–––

1.0

V

T

J = 25°C, I S = 8.0A, V GS = 0V

t

rr

Reverse Recovery Time

–––

20

30

ns

T

J = 25°C, I F = 8.0A, V DD = 15V

 

Q

rr

Reverse Recovery Charge

–––

10

15

nC

di/dt = 100A/μs

t

on

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

100 VGS TOP 10V 5.0V 4.5V 3.5V 10 3.0V 2.7V 2.5V BOTTOM 2.3V 1 0.1
100 VGS TOP 10V 5.0V 4.5V 3.5V 10 3.0V 2.7V 2.5V BOTTOM 2.3V 1 0.1
100
VGS
TOP
10V
5.0V
4.5V
3.5V
10
3.0V
2.7V
2.5V
BOTTOM
2.3V
1
0.1
≤60μ
s
PULSE
WIDTH
Tj =
25°C
2.3V
0.01
0.1
1
10
100
I D
rD,
ain- ot - oS u
er C uc rren (t
)A
I D
a nD,
tor
oSi
ecu--
er
(t AnruC
)r

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100 10 T J = 175°C 1 T J = 25°C 0.1 V = 15V
100
10
T J = 175°C
1
T J = 25°C
0.1
V
= 15V
DS
≤60μs PULSE
WIDTH
0.01
1
2
3
4
5
6
I D
oSotinrD,
a
ecu--
er
nruC
( )Atr
R
a nD,
tor
oSi
ecu--
ecntaisseRnOr
oD )n(S
moN )delizar(

V GS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

100

10

1

0.1

VGS TOP 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.3V 2.3V ≤60μ s PULSE
VGS
TOP
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM
2.3V
2.3V
≤60μ
s PULSE WIDTH
Tj = 175°C
0.1
1
10
100

V DS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics 2.0 I D = 9.8A V GS = 10V 1.5
Fig 2. Typical Output Characteristics
2.0
I D = 9.8A
V GS = 10V
1.5
1.0
0.5
-60 -40
-20
0
20
40
60
80 100 120 140 160 180

T J , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

10000 V = 0V, f = 1 MHZ GS C = C C C ds
10000
V
=
0V,
f
=
1
MHZ
GS
C
=
C
C
C ds SHORTED
iss
gs +
gd ,
C
=
C
rss
gd
C
=
C
C
oss
ds +
gd
1000
Ciss
Coss
Crss
100
10
0.1
1
10
100
atcapaC,C
)pecni
F(

V DS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

100 T J = 175°C 10 T J = 25°C 1 0V V GS =
100
T J = 175°C
10
T J =
25°C
1
0V
V GS =
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I DS
eseveR,
ar
nD
eir
)AnruC
(tr

V SD , Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

(V) Fig 7. Typical Source-Drain Diode Forward Voltage 16 I D = 8.0A V DS =
16 I D = 8.0A V DS = 24V V DS = 15V 12 8
16
I D = 8.0A
V DS = 24V
V DS = 15V
12
8
4
0
0
2
4
6
8
10
12
14
V
oStoetaG,
ecu--
( )VegltaoVr
SG

Q g , Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

1000 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100 μ sec 1msec
1000
OPERATION
IN
THIS AREA
LIMITED BY R
DS (on)
100
100
μ
sec
1msec
10
10msec
1
T A =
25°C
Tj = 175°C
Single Pulse
0.1
0
1
10
100
I D
a nD,
tr
oSoi
ecu--
eCr
(t Anru
)r

V DS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

10 2.5 8 = 250μA I D 2.0 6 I D = 25μA 1.5 4
10
2.5
8
= 250μA
I D
2.0
6
I D =
25μA
1.5
4
1.0
2
0
0.5
25
50
75
100
125
150
175
-75
-50 -25
0
25
50
75
100 125 150 175
T A , Ambient Temperature (°C)
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
100
D =
0.50
0.20
10
0.10
Ri (°C/W)
τι (sec)
0.05
0.1396039
0.000010
0.4048955
0.000030
0.02
1
R 1
R 2
R 3
R 4
R 5
R 6
R 7
R 8
0.5273926
0.000020
0.01
R 1
R 2
R 3
R 4
R 5
R 6
R 7
R 8
1.2084906
0.001289
τ J
τ J
τ a
1.5779475
0.000340
τ
1 τ 2
τ 3
τ 4
τ 5
τ 6
τ
τ 8
7.0394610
0.009747
7
τ 1
τ 2
τ 3
τ
τ 5
τ 6
τ 7
τ 8
4
18.0102679
27.798341
0.1
Ci=
τi/Ri
33.5929564
0.575346
SINGLE
PULSE
Notes:
( THERMAL
RESPONSE )
1. Duty
Factor D = t1/t2
2. Peak Tj = P dm
x
Zthja
+
Tc
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
emeTh
Rr
sa
( Zesnopl
)
AJth
I D
a nD,
eir
)AnruC
(tr
V
ehetaG, ( )VegltaoVldohsrT
thG )(S

t 1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

38 I D = 9.8A 34 30 26 22 T = 125°C 18 J T
38
I D = 9.8A
34
30
26
22
T
= 125°C
18
J
T
= 25°C
14
J
10
2.0
4.0
6.0
8.0
10.0
R
a(o
i nD,n
oS)
tor
ecu--
Ω)m(ecnatisseRnOr
SD
E
)J(myrgenEehcnlaavAelsuPleginS
,SA

V GS , Gate-to-Source Voltage (V)

Fig 12. On-Resistance vs. Gate Voltage

15V L DRIVER V DS D.U.T R G + - V DD I AS 20V
15V
L
DRIVER
V DS
D.U.T
R G
+
-
V DD
I AS
20V
t
0.01Ω
p

A

Fig 14a. Unclamped Inductive Test Circuit

≤ 1 ≤ 0.1 % Fig 15a. Switching Time Test Circuit
≤ 1
≤ 0.1 %
Fig 15a. Switching Time Test Circuit

+ -

200

160

120

80

40

0

I D TOP 3.0A 5.0A BOTTOM 8.0A 25 50 75 100 125 150 175
I D
TOP
3.0A
5.0A
BOTTOM
8.0A
25
50
75
100
125
150
175

Starting T J , Junction Temperature (°C)

Fig 13. Maximum Avalanche Energy vs. Drain Current V (BR)DSS t p I AS
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V (BR)DSS
t p
I AS
Fig 14b. Unclamped Inductive Waveforms V DS 90% 10% V GS t d(on) t r
Fig 14b. Unclamped Inductive Waveforms
V DS
90%
10%
V GS
t d(on)
t r
t d(off)
t f

Fig 15b. Switching Time Waveforms

+ • • - • + - + - • + • • - •
+
-
+
-
+
-
+
-

Driver Gate Drive P.W. Period D = P.W. Period V GS =10V D.U.T. I SD
Driver Gate Drive
P.W.
Period
D =
P.W.
Period
V GS =10V
D.U.T. I SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V DS Waveform
Diode Recovery
dv/dt
V DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
Ripple ≤ 5%
I SD

Fig 16. for N-Channel HEXFET Power MOSFETs

5% I SD Fig 16. for N-Channel HEXFET Power MOSFETs 0 L DUT 20K 1K Fig

0

L DUT 20K 1K Fig 17a. Gate Charge Test Circuit
L
DUT
20K
1K
Fig 17a. Gate Charge Test Circuit

VCC

Id

Vds Vgs Vgs(th) Qgodr Qgd Qgs2 Qgs1
Vds
Vgs
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1

Fig 17b.

Gate Charge Waveform

SO-8 Package Outline

Dimensions are shown in milimeters (inches)

Package Outline Dimensions are shown in milimeters (inches) INCH E S MILLIME T E RS DIM
INCH E S MILLIME T E RS DIM D B MIN MAX MIN MAX 5
INCH E S
MILLIME T E RS
DIM
D
B
MIN
MAX
MIN
MAX
5
A
.0532
.0688
1.35
1.75
A
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
8
7
6
5
c
.0075
.0098
0.19
0.25
6
H
D
.189
.1968
4.80
5.00
E
0.25 [.010]
A
E
.1497
.1574
3.80
4.00
1
2
3
4
e
.050 B AS IC
1.27
B AS IC
e 1
.025 B AS IC
0.635
B AS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
6X
e
L
.016
.050
0.40
1.27
y
e1
K x 45°
A
C
y
0.10 [.004]
8X b
A1
8X L
8X c
7
0.25 [.010]
CAB
FOOTPRINT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
6
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]

SO-8 Part Marking Information

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

INTERNATIONAL

RECTIFIER

LOGO

XXXX F7101
XXXX
F7101

DATE CODE (YWW)

P

= DISGNATES LEAD - FREE PRODUCT (OPTIONAL)

Y

= LAST DIGIT OF THE YEAR

WW = WEEK

A = ASSEMBLY SITE CODE

LOT CODE

PART NUMBER

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 (

SO-8 Tape and Reel

Dimensions are shown in milimeters (inches)

TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 )
TERMINAL NUMBER 1
12.3
( .484 )
11.7
( .461 )
8.1
( .318 )
7.9
( .312 )
FEED DIRECTION

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40
( .566 )
12.40
( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25°C, L = 1.43mH, R G = 25Ω, I AS = 8.0A. Pulse width 400μs; duty cycle 2%. When mounted on 1 inch square copper board.

R θ is measured at

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Orderable Part number Package Type Standard Pack Note Form Quantity   IRF8313PbF SO-8

Orderable Part number

Package Type

Standard Pack

Note

Form

Quantity

 

IRF8313PbF

SO-8

Tube/Bulk

95

 

IRF8313TRPbF

SO-8

Tape and Reel

4000

 

Qualification Information

Consumer (per JEDEC JESD47F guidelines)

Qualification Level

Moisture Sensitivity Level

SO-8

MSL1

(per JEDEC J-STD-020D )

RoHS Compliant

Yes

Applicable version of JEDEC standard at the time of product release.

Data and specifications subject to change without notice.

Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo,

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/08