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We use INFRARED EMITTER and DETECTOR to over come the problem.


In early days to find out human entry in unauthorized places
achieved by using LDR'S and LIGHT OPERATED SYSTEM, which had a
problem, that may work in sunlights and cross sectional luminaries
and provides false information to monitoring station.
To avoid this we are using invisible INFRARED RADIATION
SYSTEM, which is harmless. In basic I.R. rays has highest wave
length than the existing VIBGYOR color spectrum. According to
manufacturer's instruction we found that I.R. rays can be generated
by applying electric current to GALLIUM ARSENIDE semiconductor
material.
Here we are using a current limiting resistor to safeguard
I.R. EMITTER as well as to produce enough rays density, which is
necessary to drive I.R. DETECTOR.
We have used 1K resistor from 5V dc to the I.R. EMITTER to
restrict current flow beyond 5mA. Even though I.R.EMITTER can
withstand upto 35mA, we have used 5mA due to shortest distance. If
the distance is more we have to increase the current flow to the
emitter.

Beyond the limitation of I.R. EMITTER can be achieved by


using additional lenses (OPTICAL SYSTEM) in front of the emitter.
I.R. DETECTOR
I.R. DETECTOR is having reverse characteristics of
the I.R. EMITTER. That is we cannot consume more current from it on
account of positive sensitivity. For the above grounds we have used
100K from the supply Voltage. So the sink current will be as per
the OHM's LAW I=V/R. So 5/100K will be less than a microamphere
which may improve the detecting characteristics.
I.R. DETECTOR will conduct as long as the rays falls on it.
So the level will be low which may goes to CUT OFF RANGE, when ever
there is no rays. Status will be high.
From the above we are clearly known that if there is no
entry signal will be low, if there is entry signal will be high.
I.R. DETECTOR drives a NPN transistor which provides inverse
output at collector end and given to a two stages SCHMITT TRIGGER.
Which will give at ultimate inversion of the I.R. DETECTOR.(If there
is no entry = high).
If there is any entry the signal output of SCHMITT TRIGGER
will be low, which creates a false information to the computer.

THEORY
I.R. EMITTER
Early emitters, both visible and infrared, suffered
from low power output deterioration(degradation) when compared to
present day devices. Emitter chip materials, commonly referred to
as III-V compounds, are combinations of elements from the III and V
columns of the periodic chart. The P-N junction is formed by either
diffusing or epitaxially growing the junction. Typical materials
used for emitters include GALLIUM ARSENIDE and GALLIUM
ALUMINUM
ARSENIDE, among others.
When a forward bias current flows through the emitter's P-N
junction, photons are emitted. The total output power is a function
of the forward current, and is measured in mW. Likewise, the axial
radiant intensity of an emitting device, which is the portion of the
total emitted power radiated within a specified cone angle directly on axis,
is also a function of this forward current, and is measured
in mW per steradian.
Motorola's line of emitter's operate at wavelengths of
either 660,850, or 940 nanometers. This encompasses the red and the

near I.R. portions of the electromagnetic frequency spectrum. Emit


ters of various wavelengths are produced for the purpose of optimiz
ing system with a variety of applications and environments.
The 940nm emitters are the most cost effective, however,
their spectral emission is not ideally matched to that of the Sili
con detectors. Most applications can tolerate certain justified by
the devices lower price. Almost all optoisolators, for example, use
the 940nm emitter.
The 850nm emitters are not well matched to silicon, but are
ideal for use in plastic fiber optic systems. Plastic fiber has a
characteristic attenuation curve which reaches a minimum at 660nm.
This attenuation is the predominant factor to consider when design
ing a plastic fiber system.
The above emitters find wide usage in a variety of isolat
ing, remote control and fiber optic applications.
Newly developed materials and refinements in chip processing
and handling have led to more efficient and more reliable emitters.
New packaging techniques have made low cost plastic devices suitable
for applications formerly requiting glass lensed units, by providing
efficient modeled-in lenses. In this way, higher on-axis radiant

intensities can be achieved, for a given amount of total radiated


power. A narrow radiation angle provides for a lower drive current
when operating in a configuration where the opto detector is on-axis
with the power into an optical fiber. When a very wide or off-axis
viewing angle is required,such as in a remote control emitters are
generally used.
Motorola's selection of emitters includes the low-cost
plastic Case 422A devices, such as MLED91, MLED96 and MLED97. Also
in a plastic package is the remote control emitter, MLED81.
Metal and glass packages, such as the TO-18(MLED930)
are utilized in applications where high axial intensity or absolute
hermeticity are essential.
Advances made in emitter technology over the years have
eliminated many of the problems of early-day devices. Even the
problem of degradation of emitter power output over time has been
brought to a level which is tolerable and predictable. When coupled
to a silicon detector, today's devices can be expected to lead a
long and useful life.

DETECTORS

As emitters have developed over the years, photodetec


tors have also advanced dramatically. Early photo transistors and
photo diodes were soon joined by photodarlington detectors, and then
by light-activated SCRs. Innovations in design have created devices
having higher sensitivity, speed and voltage capabilities.
Recent developments in detector technology have led to
larger and more complex circuit integration. Photodetectors incor
porating SCHMITT TRIGGER logic outputs are becoming increasingly
popular in applications requiring very fast speed, hysteresis for
noise immunity, and logic level outputs.
Motorola introduced the world's first photo-triac driver, a
planar silicon device capable of controlling loads on an ac power
line. This was followed by the zero-crossing triac driver, also a
Motorola development. This device stands as a classic circuitry,
photo-optic technology, high voltage solid state physics and field
effect transistor (FET) technology are all incorporated on a
monolithic integrated circuit chip inside this device.
Future trends point to even higher performance
characteristics and more circuit integration in photodetectors.

Detectors, are like emitters, are available in plastic and


in lensed metal packages.

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