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THEORY
I.R. EMITTER
Early emitters, both visible and infrared, suffered
from low power output deterioration(degradation) when compared to
present day devices. Emitter chip materials, commonly referred to
as III-V compounds, are combinations of elements from the III and V
columns of the periodic chart. The P-N junction is formed by either
diffusing or epitaxially growing the junction. Typical materials
used for emitters include GALLIUM ARSENIDE and GALLIUM
ALUMINUM
ARSENIDE, among others.
When a forward bias current flows through the emitter's P-N
junction, photons are emitted. The total output power is a function
of the forward current, and is measured in mW. Likewise, the axial
radiant intensity of an emitting device, which is the portion of the
total emitted power radiated within a specified cone angle directly on axis,
is also a function of this forward current, and is measured
in mW per steradian.
Motorola's line of emitter's operate at wavelengths of
either 660,850, or 940 nanometers. This encompasses the red and the
DETECTORS